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218 条记录 (耗时 0.027 秒)

    Method of forming contact layers on substrates
    3.
    发明授权
    Method of forming contact layers on substrates 有权
    在基片上形成接触层的方法

    公开(公告)号：US07704880B1

    公开(公告)日：2010-04-27

    申请号：US12190082

    申请日：2008-08-12

    申请人： Cyprian E. Uzoh ,  Bulent M. Basol ,  Hung-Ming Wang ,  Homayoun Talieh

    发明人： Cyprian E. Uzoh ,  Bulent M. Basol ,  Hung-Ming Wang ,  Homayoun Talieh

    IPC分类号： H01L21/44

    CPC分类号： H01L21/2885 ,  C25D5/02 ,  C25D7/123 ,  C25D17/005

    摘要： A method is provided for manufacturing removable contact structures on the surface of a substrate to conduct electricity from a contact member to the surface during electroprocessing. The method comprises forming a conductive layer on the surface. A predetermined region of the conductive layer is selectively coated by a contact layer so that the contact member touches the contact layer as the electroprocessing is performed on the conductive layer.

    摘要翻译： 提供了一种用于在基板的表面上制造可移除接触结构以在电加工期间将电从接触构件传导到表面的方法。 该方法包括在表面上形成导电层。 导电层的预定区域被接触层选择性地涂覆，使得当在导电层上进行电处理时，接触构件接触接触层。

    Anode designs for planar metal deposits with enhanced electrolyte solution blending and process of supplying electrolyte solution using such designs
    7.
    发明授权
    Anode designs for planar metal deposits with enhanced electrolyte solution blending and process of supplying electrolyte solution using such designs 有权
    阳极设计用于具有增强的电解质溶液共混的平面金属沉积和使用这种设计提供电解质溶液的过程

    公开(公告)号：US06695962B2

    公开(公告)日：2004-02-24

    申请号：US09845262

    申请日：2001-05-01

    申请人： Cyprian E. Uzoh ,  Homayoun Talieh ,  Bulent M. Basol

    发明人： Cyprian E. Uzoh ,  Homayoun Talieh ,  Bulent M. Basol

    IPC分类号： C25D500

    CPC分类号： C25D7/12 ,  C25D5/08 ,  C25F7/00 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/32134

    摘要： An anode assembly by which a solution can be supplied to a surface of a semiconductor substrate includes a housing defining an internal housing volume into which the solution can flow. A closure is provided for the internal housing volume, and the solution can be discharged from the internal housing volume through the closure towards the surface of the semiconductor substrate. A filter divides the internal housing volume into a first chamber and a second chamber located between the first chamber and the closure. During supply of the solution to the surface, a flow of the solution into the second chamber occurs at a higher rate than a flow of the solution into the first chamber, and the flows are blended in the second chamber.

    摘要翻译： 可以将溶液供应到半导体衬底的表面的阳极组件包括限定溶液可以流过的内部容纳容积的壳体。 为内部容积容积提供闭合件，并且溶液可以通过闭合件从内部容纳体积朝向半导体衬底的表面排出。 过滤器将内部容器体积分成第一室和位于第一室和封闭件之间的第二室。 在将溶液供应到表面期间，溶液流入第二室的流量以比溶液流入第一室的速度更高的速率进行，并且流在第二室中共混。

    Method of forming contact layers on substrates
    8.
    发明授权
    Method of forming contact layers on substrates 有权
    在基片上形成接触层的方法

    公开(公告)号：US07416975B2

    公开(公告)日：2008-08-26

    申请号：US11232718

    申请日：2005-09-21

    申请人： Cyprian E. Uzoh ,  Bulent M. Basol ,  Hung-Ming Wang ,  Homayoun Talieh

    发明人： Cyprian E. Uzoh ,  Bulent M. Basol ,  Hung-Ming Wang ,  Homayoun Talieh

    IPC分类号： H01L21/44

    CPC分类号： H01L21/2885 ,  C25D5/02 ,  C25D7/123 ,  C25D17/005

    摘要： A method is provided for manufacturing removable contact structures on the surface of a substrate to conduct electricity from a contact member to the surface during electroprocessing. The method comprises forming a conductive layer on the surface. A predetermined region of the conductive layer is selectively coated by a contact layer so that the contact member touches the contact layer as the electroprocessing is performed on the conductive layer.

    摘要翻译： 提供了一种用于在基板的表面上制造可移除接触结构以在电加工期间将电从接触构件传导到表面的方法。 该方法包括在表面上形成导电层。 导电层的预定区域被接触层选择性地涂覆，使得当在导电层上进行电处理时，接触构件接触接触层。

    Method and structure to reduce defects in integrated circuits and substrates
    9.
    发明授权
    Method and structure to reduce defects in integrated circuits and substrates 失效
    降低集成电路和基板缺陷的方法和结构

    公开(公告)号：US06861354B2

    公开(公告)日：2005-03-01

    申请号：US10358565

    申请日：2003-02-04

    申请人： Cyprian E. Uzoh ,  Homayoun Talieh ,  Bulent M. Basol

    发明人： Cyprian E. Uzoh ,  Homayoun Talieh ,  Bulent M. Basol

    IPC分类号： H01L21/288 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763

    CPC分类号： H01L21/76843 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for forming conductor structures on a semiconductor wafer is provided. The method begins with depositing a seed layer having a substantially consistent thickness over a barrier layer that covers the features and the field regions among them. The process continues with electrodepositing a planar copper layer on the seed layer and subsequently electroetching it until a thinned seed layer remains over the field regions. When another layer of planar copper is deposited on the remaining copper in the features and on the thinned seed layer on the field regions, this structure minimizes stress related defects in the features which occur during a following anneal process.

    摘要翻译： 提供了一种在半导体晶片上形成导体结构的方法。 该方法开始于在覆盖其中的特征和场区域的阻挡层上沉积具有基本上一致的厚度的种子层。 该过程继续在种子层上电沉积平面铜层，随后电蚀，直到变薄的种子层保留在场区域上。 当另一层平面铜沉积在特征中的剩余铜上以及在场区上的薄化种子层上时，该结构使得在随后的退火过程中发生的特征中的应力相关缺陷最小化。