摘要:
A hermetic media interface for a sensor package is disclosed. Preferably, the hermetic media interface is incorporated into a pressure sensor package for interfacing directly to fluid and/or gaseous media. In one embodiment, the pressure sensor package includes a semiconductor die and a pressure port that are housed in a pre-molded plastic package. A eutectic solder is coupled between the semiconductor die and the pressure port to solder the same to the semiconductor die. The semiconductor die may be metallized to enhance solderability. In an alternative embodiment, the pressure port is made from one or more plastic materials and the pressure port is attached to the semiconductor die with an adhesive. An integral stress-isolation region may optionally be incorporated on the semiconductor die.
摘要:
A chip-scale sensor package is described. In one embodiment, the chip-scale sensor package includes a semiconductor substrate having a sensor region, and a semiconductor cap having a recess. The semiconductor cap is bonded to the semiconductor substrate with a thermocompression bond to form a cavity therebetween. The semiconductor substrate is bonded to the semiconductor cap using different types of materials. The semiconductor substrate and/or the semiconductor cap may optionally include a semiconductor device such as an electronically trimmable integrated circuit fabricated thereon. In addition, the semiconductor substrate may optionally include an integral stress isolation flexible region for isolation of the sensor region.
摘要:
The present invention is a semiconductor pressure sensor. In one embodiment, the semiconductor pressure sensor includes a diaphragm having a first thickness and at least cone raised boss that is coupled to a first side of the diaphragm. The at least one raised boss increases the diaphragm thickness in the region occupied by the at least one raised boss to a second thickness. A plurality of piezoresistors are disposed on a second side of the diaphragm in regions of the first thickness. In another embodiment, a semiconductor pressure sensor diaphragm includes at least one raised boss disposed along a central axis on a first side of the diaphragm. At least two raised bridge regions are disposed along the central axis, interconnecting the at least one raised boss and a diaphragm edge. Each raised bridge region is narrower than the raised boss. A plurality of piezoresistors are disposed on the raised bridge regions of the diaphragm along the central axis.
摘要:
A semiconductor pressure sensor compatible with fluid and gaseous media applications is described. The semiconductor pressure sensor includes a sensor capsule having a semiconductor die and a silicon cap that is bonded to the semiconductor die. The semiconductor die includes a diaphragm that incorporates piezoresistive sensors thereon, and a stress isolation mechanism for isolating the diaphragm from packaging and mounting stresses. The silicon cap includes a cavity for allowing the diaphragm to deflect. The semiconductor pressure sensor further includes a pressure port that is hermetically attached to the semiconductor die. The sensor capsule and pressure port may be incorporated into a plastic housing. In one embodiment, the silicon cap is bonded to the semiconductor die to form an integral pressure reference. In an alternative embodiment, a second pressure port is provided for allowing gage or differential pressure measurements. A technique for incorporating the piezoresistive sensors is also described. An ASIC may be optionally attached to the silicon cap, and/or active electronic circuitry may be fabricated on the semiconductor die or silicon cap. Additional coatings may be optionally applied to the pressure port and semiconductor die for enhancing chemical resistance.
摘要:
A rigid encapsulation package for semiconductor sensors, actuators, and devices is described. In one embodiment, a semiconductor pressure sensor includes a sensor element having a deformable diaphragm for measurement of pressure, and a cap that includes a recess. The cap is attached to the sensor element to form a cavity therebetween. The pressure sensor further includes a leadframe, interconnecting bond wires, a pressure port that is coupled to the sensor element, and a nominally rigid material formed over the sensor element, cap, leadframe, and bond wires. The material may include one or more of the following: epoxy, RTV, resins, and gel. The sensor element may include a built-in stress isolation flexible region. A second pressure port may optionally be attached to the housing for providing differential or gage pressure measurements.
摘要:
A stress-isolated integrated circuit includes a semiconductor die (24) having first and second surfaces (28, 32) and a semi-circumferential trench (44) formed into the first surface of the die to define a stress-isolated region (48). At least some of the active IC components are located in the stress-isolated region. A cavity (46) is formed into the second surface of the die, the cavity being sized so that the trench opens into the cavity to create a cantilevered stress-isolated region extending from the remainder of the die. The second surface of the die is secured to a lead frame (36), the lead frame having bond wires (42) secured to bond pads (26) on the die. A molding compound (54) encapsulates the die, the cap, the bond wires and a portion of the lead frame to create a molded IC device (20). The invention helps to improve performance characteristics and component variables of analog and mixed-signal integrated circuits by isolating critical portions of the integrated circuits from detrimental packaging and molding stresses.
摘要:
A mobile display device may include a first display panel with a display screen having a viewing surface and a second display panel with a display screen having a viewing surface. The display panels may be coupled with a multi-position hinge. A first operating system may be coupled to the first display panel and a second operating system may be coupled to the second display panel. The first operating system may operate independently of the second operating system and the second operating system may operate independently of the first operating system.
摘要:
In a multi-threaded processor, thread priority variables are set up in memory. The actual assignment of thread priority is based on the expiration of a thread precedence counter. To further augment, the effectiveness of the thread precedence counters, starting counters are associated with each thread that serve as a multiplier for the value to be used in the thread precedence counter. The value in the starting counters are manipulated so as to prevent one thread from getting undue priority to the resources of the multi-threaded processor.
摘要:
In a multi-threaded processor, thread priority variables are set up in memory. The actual assignment of thread priority is based on the expiration of a thread precedence counter. To further augment, the effectiveness of the thread precedence counters, starting counters are associated with each thread that serve as a multiplier for the value to be used in the thread precedence counter. The value in the starting counters are manipulated so as to prevent one thread from getting undue priority to the resources of the multi-threaded processor.
摘要:
In a multi-threaded processor, thread priority variables are set up in memory. The actual assignment of thread priority is based on the expiration of a thread precedence counter. To further augment, the effectiveness of the thread precedence counters, starting counters are associated with each thread that serve as a multiplier for the value to be used in the thread precedence counter. The value in the starting counters are manipulated so as to prevent one thread from getting undue priority to the resources of the multi-threaded processor.