Abstract:
A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.
Abstract:
A microphone system has a base coupled with first and second microphone apparatuses. The first microphone apparatus is capable of producing a first output signal having a noise component, while the second microphone apparatus is capable of producing a second output signal. The first microphone apparatus may have a first back-side cavity and the second microphone may have a second back-side cavity. The first and second back-side cavities may be fluidly unconnected. The system also has combining logic operatively coupled with the first microphone apparatus and the second microphone apparatus. The combining logic uses the second output signal to remove at least a portion of the noise component from the first output signal.
Abstract:
A microphone system has a primary microphone for producing a primary signal, a secondary microphone for producing a secondary signal, and a selector operatively coupled with both the primary microphone and the secondary microphone. The system also has an output for delivering an output audible signal principally produced by one of the to microphones. The selector selectively permits either 1) at least a portion of the primary signal and/or 2) at least a portion of the secondary signal to be forwarded to the output as a function of the noise in the primary signal.
Abstract:
A microphone system has a base coupled with first and second microphone apparatuses. The first microphone apparatus is capable of producing a first output signal having a noise component, while the second microphone apparatus is capable of producing a second output signal. The system also has combining logic operatively coupled with the first microphone apparatus and the second microphone apparatus. The combining logic uses the second output signal to remove at least a portion of the noise component from the first output signal.
Abstract:
An integrated circuit with an interface between a semiconductor layer (having a selected region) and a second layer has a barrier with a gettering effect that 1) substantially circumscribes the selected region and 2) extends to the interface. Despite the fact that its gettering effect extends to the interface, the barrier does not penetrate the second layer.
Abstract:
A microphone system has a primary microphone for producing a primary signal, a secondary microphone for producing a secondary signal, and a selector operatively coupled with both the primary microphone and the secondary microphone. The system also has an output for delivering an output audible signal principally produced by one of the to microphones. The selector selectively permits either 1) at least a portion of the primary signal and/or 2) at least a portion of the secondary signal to be forwarded to the output as a function of the noise in the primary signal.
Abstract:
A method of forming a microphone forms a backplate, and a flexible diaphragm on at least a portion of a wet etch removable sacrificial layer. The method adds a wet etch resistant material, where a portion of the wet etch resistant material is positioned between the diaphragm and the backplate to support the diaphragm. Some of the wet etch resistant material is not positioned between the diaphragm and backplate. The method then removes the sacrificial material before removing any of the wet etch resistant material added during the prior noted act of adding. The wet etch resistant material then is removed substantially in its entirety after removing at least part of the sacrificial material.
Abstract:
A microphone system has a base coupled with first and second microphone apparatuses. The first microphone apparatus is capable of producing a first output signal having a noise component, while the second microphone apparatus is capable of producing a second output signal. The system also has combining logic operatively coupled with the first microphone apparatus and the second microphone apparatus. The combining logic uses the second output signal to remove at least a portion of the noise component from the first output signal.
Abstract:
A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.
Abstract:
A method of forming a SOI wafer obtains an intermediate apparatus having a first wafer, a second wafer, and an insulator material bonding the first and second wafers together. The first wafer has an oxygen precipitate concentration sufficient for gettering. The method reduces the profile of at least a portion of the first wafer to form an exposed surface, and adds a layer of material to the exposed surface of the first wafer. The layer of material substantially integrates with the first wafer to have substantially the same structure.