公开(公告)号：US06890386B2

公开(公告)日：2005-05-10

申请号：US10194639

申请日：2002-07-12

Applicant: Jay Brian DeDontney ,  Richard H. Matthiesen ,  Samuel Kurita

Inventor： Jay Brian DeDontney ,  Richard H. Matthiesen ,  Samuel Kurita

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC classification number: C23C16/45514 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/45563 ,  C23C16/45572 ,  C23C16/45578

Abstract: An injector and exhaust assembly for providing delivery of gas to a substrate is provided. The injector and exhaust assembly comprises at least two injectors positioned adjacent each other and spaced apart to form at least one exhaust channel therebetween, and a mounting plate for securing the at least two injectors, wherein each of the at least two injectors being individually mounted to or removed from the mounting plate, and the mounting plate being provided with at least one exhaust slot in fluid communication with the at least one exhaust channel. An exhaust assembly is coupled to the mounting plate to remove exhaust gases from the injectors.

Abstract translation: 提供了一种用于将气体输送到基板的喷射器和排气组件。 喷射器和排气组件包括至少两个彼此相邻并间隔开的至少两个喷射器，以在其间形成至少一个排气通道，以及用于固定至少两个喷射器的安装板，其中所述至少两个喷射器中的每个喷射器分别安装到 或从安装板移除，并且安装板设置有与至少一个排气通道流体连通的至少一个排气狭槽。 排气组件联接到安装板以去除喷射器中的废气。

公开(公告)号：US08293013B2

公开(公告)日：2012-10-23

申请号：US12346195

申请日：2008-12-30

Applicant: Jay Brian DeDontney

Inventor： Jay Brian DeDontney

IPC: C23C16/455 ,  C23C16/44 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC classification number: C23C16/45565 ,  B01J19/0046 ,  B01J2219/0036 ,  B01J2219/00376 ,  B01J2219/00418 ,  B01J2219/00443 ,  B01J2219/00495 ,  B01J2219/00536 ,  B01J2219/00603 ,  B01J2219/00698 ,  C23C16/45574 ,  C23C16/45578 ,  Y10T29/49764 ,  Y10T137/0318

Abstract: An apparatus for deploying two fluids separately into a reaction chamber is provided. The apparatus includes a first distribution network that is formed on a plate having a distribution face and a dispensing face. The first distribution network is defined by a plurality of recessed channels on the distribution face. The plurality of recessed channels includes a plurality of thru-ports that extend from the plurality of recessed channels to the dispensing face. The apparatus further includes a second distribution network that has passages formed below the plurality of recessed channels and above the dispensing face. A first set of ports extends from the passages to the distribution face and a second set of ports extends from a top surface of the distribution face to the dispensing face.

Abstract translation: 提供了一种用于将两种流体单独地部署到反应室中的装置。 该装置包括形成在具有分配面和分配面的板上的第一分配网络。 第一分配网络由分配面上的多个凹陷通道限定。 多个凹陷通道包括从多个凹陷通道延伸到分配面的多个通孔。 该装置还包括第二分配网络，其具有形成在多个凹陷通道下方并且在分配面上方的通道。 第一组端口从通道延伸到分配面，并且第二组端口从分配面的顶表面延伸到分配面。

公开(公告)号：US5849088A

公开(公告)日：1998-12-15

申请号：US8024

申请日：1998-01-16

Applicant: Jay Brian DeDontney ,  Lawrence Duane Bartholomew

Inventor： Jay Brian DeDontney ,  Lawrence Duane Bartholomew

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  H01L21/205 ,  C23C16/00

CPC classification number: C23C16/45595 ,  C23C16/4401 ,  C23C16/54

Abstract: A protective shield and an atmospheric pressure chemical vapor deposition system including a protective shield. The shield includes a frame assembly including a pair of spaced end walls and a pair of side walls extending between and mounted to the end walls, and a plurality of shield bodies carried by the frame assembly. Each of the shield bodies includes a base, a perforated sheet carried by the base, a plenum between the base and the perforated sheet, and a gas delivery device for delivering an inert gas to the plenum at a flow rate such that the gas diffuses through the perforated sheet. The chemical vapor deposition system includes a plurality of processing chambers, a conveyor for transporting substrates through the processing chambers, buffer chambers isolating the processing chambers from the rest of the process path all enclosed within a muffle. A protective shield mounted in the processing chambers includes injector shield bodies positioned adjacent the injector and shunt shield bodies spaced from the injector shield bodies, an inlet port between the injector shield bodies, and an outlet port between the shunt shield bodies for the flow of reagents through the protective shield. The shunt shield bodies each include a plenum filled with an inert gas and a bottom outlet port coupled to the plenum for delivering a supply of inert gas below the protective shield to form buffer barriers on opposite sides of the injection ports. The shield body captures the perforated sheets and shield bodies such that the sheets and shield body base can freely expand and contract relative to each other and the end walls under varying temperature conditions, maintaining the precise chamber geometry control required for CVD processing.

Abstract translation: 保护罩和包括保护罩的大气压化学气相沉积系统。 护罩包括框架组件，该框架组件包括一对隔开的端壁和在端壁之间延伸并安装到端壁之间的一对侧壁以及由框架组件承载的多个屏蔽体。 每个屏蔽体包括基座，由基座承载的穿孔板，在基座和穿孔板之间的增压室，以及气体输送装置，用于以使得气体扩散通过的流量将惰性气体输送到气室 穿孔板。 化学气相沉积系统包括多个处理室，用于将基板输送通过处理室的输送机，将处理室与处理通道的其余部分隔离的缓冲室，全部封闭在马弗管内。 安装在处理室中的保护罩包括与喷射器屏蔽体间隔开的喷射器和分流屏蔽体相邻定位的喷射器屏蔽体，喷射器屏蔽体之间的入口端口和用于流动试剂的分流屏蔽体之间的出口 通过防护罩。 分流屏蔽体各自包括填充有惰性气体的集气室和联接到集气室的底部出口端口，用于在保护屏蔽下方输送惰性气体供应，以在注入端口的相对侧上形成缓冲屏障。 屏蔽体捕获穿孔板和屏蔽体，使得片材和屏蔽体基座可以在变化的温度条件下相对于彼此和端壁自由地膨胀和收缩，从而保持CVD处理所需的精确的室几何形状控制。

公开(公告)号：US20120090688A1

公开(公告)日：2012-04-19

申请号：US13332104

申请日：2011-12-20

Applicant: Jay Brian DeDontney

Inventor： Jay Brian DeDontney

IPC: F15D1/00

CPC classification number: C23C16/45565 ,  B01J19/0046 ,  B01J2219/0036 ,  B01J2219/00376 ,  B01J2219/00418 ,  B01J2219/00443 ,  B01J2219/00495 ,  B01J2219/00536 ,  B01J2219/00603 ,  B01J2219/00698 ,  C23C16/45574 ,  C23C16/45578 ,  Y10T29/49764 ,  Y10T137/0318

Abstract: An apparatus for deploying two fluids separately into a reaction chamber is provided. The apparatus includes a first distribution network that is formed on a plate having a distribution face and a dispensing face. The first distribution network is defined by a plurality of recessed channels on the distribution face. The plurality of recessed channels includes a plurality of thru-ports that extend from the plurality of recessed channels to the dispensing face. The apparatus further includes a second distribution network that has passages formed below the plurality of recessed channels and above the dispensing face. A first set of ports extends from the passages to the distribution face and a second set of ports extends from a top surface of the distribution face to the dispensing face.

Abstract translation: 提供了一种用于将两种流体单独地部署到反应室中的装置。 该装置包括形成在具有分配面和分配面的板上的第一分配网络。 第一分配网络由分配面上的多个凹陷通道限定。 多个凹陷通道包括从多个凹陷通道延伸到分配面的多个通孔。 该装置还包括第二分配网络，其具有形成在多个凹陷通道下方并且在分配面上方的通道。 第一组端口从通道延伸到分配面，并且第二组端口从分配面的顶表面延伸到分配面。

公开(公告)号：US20100167551A1

公开(公告)日：2010-07-01

申请号：US12346195

申请日：2008-12-30

Applicant: Jay Brian DeDontney

Inventor： Jay Brian DeDontney

IPC: H01L21/30 ,  C23C16/54

CPC classification number: C23C16/45565 ,  B01J19/0046 ,  B01J2219/0036 ,  B01J2219/00376 ,  B01J2219/00418 ,  B01J2219/00443 ,  B01J2219/00495 ,  B01J2219/00536 ,  B01J2219/00603 ,  B01J2219/00698 ,  C23C16/45574 ,  C23C16/45578 ,  Y10T29/49764 ,  Y10T137/0318

Abstract: An apparatus for deploying two fluids separately into a reaction chamber is provided. The apparatus includes a first distribution network that is formed on a plate having a distribution face and a dispensing face. The first distribution network is defined by a plurality of recessed channels on the distribution face. The plurality of recessed channels includes a plurality of thru-ports that extend from the plurality of recessed channels to the dispensing face. The apparatus further includes a second distribution network that has passages formed below the plurality of recessed channels and above the dispensing face. A first set of ports extends from the passages to the distribution face and a second set of ports extends from a top surface of the distribution face to the dispensing face.

Abstract translation: 提供了一种用于将两种流体单独地部署到反应室中的装置。 该装置包括形成在具有分配面和分配面的板上的第一分配网络。 第一分配网络由分配面上的多个凹陷通道限定。 多个凹陷通道包括从多个凹进通道延伸到分配面的多个通孔。 该装置还包括第二分配网络，其具有形成在多个凹陷通道下方并且在分配面上方的通道。 第一组端口从通道延伸到分配面，并且第二组端口从分配面的顶表面延伸到分配面。

公开(公告)号：US20080000424A1

公开(公告)日：2008-01-03

申请号：US11427473

申请日：2006-06-29

Applicant: Robert Jeffrey Bailey ,  Jay Brian DeDontney

Inventor： Robert Jeffrey Bailey ,  Jay Brian DeDontney

IPC: C23C16/00 ,  B05B1/14 ,  B05B1/26

CPC classification number: C23C16/45565

Abstract: A showerhead for a gas supply apparatus. This showerhead includes a body having a distribution plate on one side and at least one gas chamber contained within the body. A plurality of holes extend normally from an outer surface of the distribution plate to the chamber. Furthermore, at least a portion of at least one hole is frustoconical or frustopyramidal in shape along the normal axis with the base of the frustoconical or frustopyramidal hole positioned adjacent the outer surface of the distribution plate.

Abstract translation: 用于供气装置的喷头。 该喷淋头包括在一侧具有分配板的主体和容纳在主体内的至少一个气室。 多个孔从分配板的外表面正常延伸到腔室。 此外，至少一个孔的至少一部分是沿着法线轴的截头圆锥形或截头圆锥形的，截头圆锥形或截头圆锥形孔的基部位于分布板的外表面附近。

公开(公告)号：US20120324692A1

公开(公告)日：2012-12-27

申请号：US13596884

申请日：2012-08-28

Applicant: Jay Brian DeDontney

Inventor： Jay Brian DeDontney

IPC: B05B1/00

CPC classification number: C23C16/45565 ,  B01J19/0046 ,  B01J2219/0036 ,  B01J2219/00376 ,  B01J2219/00418 ,  B01J2219/00443 ,  B01J2219/00495 ,  B01J2219/00536 ,  B01J2219/00603 ,  B01J2219/00698 ,  C23C16/45574 ,  C23C16/45578 ,  Y10T29/49764 ,  Y10T137/0318

Abstract: An apparatus for deploying two fluids separately into a reaction chamber is provided. The apparatus includes a first distribution network that is formed on a plate having a distribution face and a dispensing face. The first distribution network is defined by a plurality of recessed channels on the distribution face. The plurality of recessed channels includes a plurality of thru-ports that extend from the plurality of recessed channels to the dispensing face. The apparatus further includes a second distribution network that has passages formed below the plurality of recessed channels and above the dispensing face. A first set of ports extends from the passages to the distribution face and a second set of ports extends from a top surface of the distribution face to the dispensing face.

Abstract translation: 提供了一种用于将两种流体单独地部署到反应室中的装置。 该装置包括形成在具有分配面和分配面的板上的第一分配网络。 第一分配网络由分配面上的多个凹陷通道限定。 多个凹陷通道包括从多个凹陷通道延伸到分配面的多个通孔。 该装置还包括第二分配网络，其具有形成在多个凹陷通道下方并且在分配面上方的通道。 第一组端口从通道延伸到分配面，并且第二组端口从分配面的顶表面延伸到分配面。

公开(公告)号：US06921437B1

公开(公告)日：2005-07-26

申请号：US10854869

申请日：2004-05-26

Applicant: Jay Brian DeDontney ,  Jack Chihchieh Yao

Inventor： Jay Brian DeDontney ,  Jack Chihchieh Yao

IPC: C23C16/00 ,  C23C16/455 ,  C23F1/00 ,  H01L20060101 ,  H01L21/306

CPC classification number: C23C16/45565 ,  C23C16/45574

Abstract: The present invention provides a gas distribution apparatus useful in semiconductor manufacturing. The gas distribution apparatus comprises a unitary member and a gas distribution network formed within the unitary member for uniformly delivering a gas into a process region. The gas distribution network is formed of an inlet passage extending upwardly through the upper surface of the unitary member for connecting to a gas source, a plurality of first passages converged at a junction and connected with the inlet passage at the junction, a plurality of second passages connected with the plurality of first passages, and a plurality of outlet passages connected with the plurality of second passages for delivering the gas into a processing region. The first passages extend radially and outwardly from the junction to the periphery surface of the unitary member, and the second passages are non-perpendicular to the first passages and extend outwardly from the first passages to the periphery surface. The outlet passages extend downwardly through the lower surface of the unitary member for delivering the gas into the processing region.

公开(公告)号：US06352592B1

公开(公告)日：2002-03-05

申请号：US09492420

申请日：2000-01-27

Applicant: Lawrence Duane Bartholomew ,  Jay Brian DeDontney ,  Christopher A. Peabody

Inventor： Lawrence Duane Bartholomew ,  Jay Brian DeDontney ,  Christopher A. Peabody

IPC: C23C1600

CPC classification number: C23C16/45519 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45595 ,  C23C16/54

Abstract: A protective shield and a semiconductor processing system including a protective shield is provided. The shield includes a frame assembly including a pair of spaced end walls and a pair of side walls extending between and mounted to the end walls, and a plurality of shield bodies carried by the frame assembly. Each of the shield bodies includes a base having a continuous unit frame, a perforated sheet carried by said continuous frame, a plenum between the base and the perforated sheet, and a gas delivery device for delivering an inert gas to the plenum at a flow rate such that the gas diffuses through the perforated sheet. The chemical vapor deposition system includes a plurality of processing chambers, a conveyor for transporting substrates through the processing chambers, buffer modules isolating the processing chambers from the rest of the process path all enclosed within a muffle, a protective shield mounted in the processing chambers includes injector shield bodies positioned adjacent the injector and shunt shield bodies spaced from the injector shield bodies, an inlet port between the injector shield bodies, and an outlet port between the shunt shield bodies for the flow of reagents through the protective shield. The shunt shield bodies each include a plenum filled with an inert gas and a bottom outlet port coupled to the plenum for delivering a supply of inert gas below the protective shield to form buffer barriers on opposite sides of the injection ports. The shield body captures the perforated sheets and shield bodies such that the sheets and shield body base can freely expand and contract relative to each other and the end walls under varying temperature conditions, maintaining the precise chamber geometry control required for CVD processing. The buffer modules are connected to a common by-pass exhaust which is independent from the system. The processing chambers are connected to a common chamber exhaust plenum which is separate from the by-pass exhaust. Such separate exhaust paths allow for separate control of each and for the substantially constant flow of gases within the system.

公开(公告)号：US6056824A

公开(公告)日：2000-05-02

申请号：US185180

申请日：1998-11-03

Applicant: Lawrence Duane Bartholomew ,  Jay Brian DeDontney ,  Christopher A. Peabody

Inventor： Lawrence Duane Bartholomew ,  Jay Brian DeDontney ,  Christopher A. Peabody

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  H01L21/205 ,  C23C16/00

CPC classification number: C23C16/45595 ,  C23C16/4401 ,  C23C16/54

Abstract: A protective shield and a semiconductor processing system including a protective shield is provided. The shield includes a frame assembly including a pair of spaced end walls and a pair of side walls extending between and mounted to the end walls, and a plurality of shield bodies carried by the frame assembly. Each of the shield bodies includes a base having a continuous unit frame, a perforated sheet carried by said continuous frame, a plenum between the base and the perforated sheet, and a gas delivery device for delivering an inert gas to the plenum at a flow rate such that the gas diffuses through the perforated sheet. The chemical vapor deposition system includes a plurality of processing chambers, a conveyor for transporting substrates through the processing chambers, buffer modules isolating the processing chambers from the rest of the process path all enclosed within a muffle. a protective shield mounted in the processing chambers includes injector shield bodies positioned adjacent the injector and shunt shield bodies spaced from the injector shield bodies, an inlet port between the injector shield bodies, and an outlet port between the shunt shield bodies for the flow of reagents through the protective shield. The shunt shield bodies each include a plenum filled with an inert gas and a bottom outlet port coupled to the plenum for delivering a supply of inert gas below the protective shield to form buffer barriers on opposite sides of the injection ports. The shield body captures the perforated sheets and shield bodies such that the sheets and shield body base can freely expand and contract relative to each other and the end walls under varying temperature conditions, maintaining the precise chamber geometry control required for CVD processing. The buffer modules are connected to a common by-pass exhaust which is independent from the system. The processing chambers are connected to a common chamber exhaust plenum which is separate from the by-pass exhaust. Such separate exhaust paths allow for separate control of each and for the substantially constant flow of gases within the system.