利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

32 条记录 (耗时 0.074 秒)

    Method and apparatus for changing input type in input system using universal plug and play
    1.
    发明授权
    Method and apparatus for changing input type in input system using universal plug and play 有权
    使用通用即插即用改变输入系统输入类型的方法和装置

    公开(公告)号：US09015383B2

    公开(公告)日：2015-04-21

    申请号：US12942605

    申请日：2010-11-09

    申请人： Je-Young Maeng ,  Ki-Chul Park ,  Joo-Yeol Lee ,  Se-Hee Han

    发明人： Je-Young Maeng ,  Ki-Chul Park ,  Joo-Yeol Lee ,  Se-Hee Han

    IPC分类号： G06F13/38 ,  G06F3/00 ,  H04L29/06 ,  H04L12/12

    CPC分类号： H04L41/0809 ,  G06F13/4286 ,  H04L12/12 ,  H04L12/2809 ,  H04L12/282 ,  H04L29/06095 ,  H04L67/141 ,  H04L67/16 ,  H04L67/28 ,  H04L69/16 ,  H04L2012/2841 ,  Y02D50/40

    摘要： A method and apparatus for changing an input type in an input system using UPnP are provided. A control point requests input capability information of input devices, which are to perform input and receives the input capability information. The control point sets up a session by determining a receiving device for receiving an input signal and a transmitting device for transmitting the input signal, using the received input capability information. The receiving device receives input data from the transmitting device, and if an input type of the receiving device is changed, the receiving device transmits information about the changed input type to the transmitting device and receives a report descriptor including information about a format of input data according to the changed input type from the transmitting device.

    摘要翻译： 提供一种用于使用UPnP改变输入系统中的输入类型的方法和装置。 控制点请求输入设备的输入能力信息，输入设备信息是执行输入并接收输入能力信息。 控制点通过使用接收到的输入能力信息确定用于接收输入信号的接收装置和用于发送输入信号的发送装置来建立会话。 接收装置从发送装置接收输入数据，如果改变接收装置的输入类型，则接收装置向发送装置发送关于改变的输入类型的信息，并且接收包括关于输入数据格式的信息的报告描述符 根据来自发送装置的改变的输入类型。

    METHOD AND APPARATUS FOR CHANGING INPUT TYPE IN INPUT SYSTEM USING UNIVERSAL PLUG AND PLAY
    2.
    发明申请
    METHOD AND APPARATUS FOR CHANGING INPUT TYPE IN INPUT SYSTEM USING UNIVERSAL PLUG AND PLAY 有权
    使用通用插头和播放在输入系统中更改输入类型的方法和装置

    公开(公告)号：US20110113169A1

    公开(公告)日：2011-05-12

    申请号：US12942605

    申请日：2010-11-09

    申请人： Je-Young MAENG ,  Ki-Chul Park ,  Joo-Yeol Lee ,  Se-Hee Han

    发明人： Je-Young MAENG ,  Ki-Chul Park ,  Joo-Yeol Lee ,  Se-Hee Han

    IPC分类号： G06F13/42 ,  G06F15/16

    CPC分类号： H04L41/0809 ,  G06F13/4286 ,  H04L12/12 ,  H04L12/2809 ,  H04L12/282 ,  H04L29/06095 ,  H04L67/141 ,  H04L67/16 ,  H04L67/28 ,  H04L69/16 ,  H04L2012/2841 ,  Y02D50/40

    摘要： A method and apparatus for changing an input type in an input system using UPnP are provided. A control point requests input capability information of input devices, which are to perform input and receives the input capability information. The control point sets up a session by determining a receiving device for receiving an input signal and a transmitting device for transmitting the input signal, using the received input capability information. The receiving device receives input data from the transmitting device, and if an input type of the receiving device is changed, the receiving device transmits information about the changed input type to the transmitting device and receives a report descriptor including information about a format of input data according to the changed input type from the transmitting device.

    摘要翻译： 提供一种用于使用UPnP改变输入系统中的输入类型的方法和装置。 控制点请求输入设备的输入能力信息，输入设备信息是执行输入并接收输入能力信息。 控制点通过使用接收到的输入能力信息确定用于接收输入信号的接收装置和用于发送输入信号的发送装置来建立会话。 接收装置从发送装置接收输入数据，如果改变接收装置的输入类型，则接收装置向发送装置发送关于改变的输入类型的信息，并且接收包括关于输入数据格式的信息的报告描述符 根据来自发送装置的改变的输入类型。

    Methods of forming dual-damascene interconnect structures on semiconductor substrates using multiple planarization layers having different porosity characteristics
    4.
    发明申请
    Methods of forming dual-damascene interconnect structures on semiconductor substrates using multiple planarization layers having different porosity characteristics 有权
    使用具有不同孔隙率特性的多个平坦化层在半导体衬底上形成双镶嵌互连结构的方法

    公开(公告)号：US20070184649A1

    公开(公告)日：2007-08-09

    申请号：US11348428

    申请日：2006-02-06

    申请人： Kyoung-Woo Lee ,  Seung-Man Choi ,  Ja-Hum Ku ,  Ki-Chul Park ,  Sun Kim

    发明人： Kyoung-Woo Lee ,  Seung-Man Choi ,  Ja-Hum Ku ,  Ki-Chul Park ,  Sun Kim

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76808 ,  H01L21/31144

    摘要： Methods of forming integrated circuit devices include patterning an electrically insulating layer to support dual-damascene interconnect structures therein. The steps of patterning the electrically insulating layer include using multiple planarization layers having different porosity characteristics. Forming an interconnect structure within an integrated circuit device may include forming an electrically insulating layer on a substrate and forming at least one via hole extending at least partially through the electrically insulating layer. The at least one via hole is filled with a first electrically insulating material having a first porosity. The filled at least one via hole is then covered with a second electrically insulating material layer having a second porosity lower than the first porosity. The second electrically insulating material layer is selectively etched back to expose a first portion of the first electrically insulating material in the at least one via hole. The electrically insulating layer is selectively etched to define a trench therein that exposes a second portion of the first electrically insulating material in the at least one via hole. The first electrically insulating material, which has a relatively high degree of porosity, is then removed from the at least one via hole. This removal step may be performed using a relatively mild ashing process because of the high porosity of the first electrically insulating material.

    摘要翻译： 形成集成电路器件的方法包括图案化电绝缘层以支持其中的双镶嵌互连结构。 图案化电绝缘层的步骤包括使用具有不同孔隙特性的多个平坦化层。 在集成电路器件内形成互连结构可以包括在衬底上形成电绝缘层，并形成至少部分穿过电绝缘层延伸的至少一个通孔。 至少一个通孔填充有具有第一孔隙率的第一电绝缘材料。 填充的至少一个通孔然后被具有低于第一孔隙率的第二孔隙率的第二电绝缘材料层覆盖。 选择性地回蚀第二电绝缘材料层以暴露至少一个通孔中的第一电绝缘材料的第一部分。 电绝缘层被选择性蚀刻以在其中限定其中的沟槽，其暴露出至少一个通孔中的第一电绝缘材料的第二部分。 然后从该至少一个通孔去除具有较高孔隙率的第一电绝缘材料。 由于第一电绝缘材料的高孔隙率，该去除步骤可以使用相对温和的灰化过程进行。

    Metal-insulator-metal (MIM) capacitor and method of fabricating the same
    5.
    发明申请
    Metal-insulator-metal (MIM) capacitor and method of fabricating the same 有权
    金属绝缘体金属（MIM）电容器及其制造方法

    公开(公告)号：US20050275005A1

    公开(公告)日：2005-12-15

    申请号：US11080567

    申请日：2005-03-16

    申请人： Seung-Man Choi ,  Ki-Chul Park ,  Bong-Seok Suh ,  Il-Ryong Kim

    发明人： Seung-Man Choi ,  Ki-Chul Park ,  Bong-Seok Suh ,  Il-Ryong Kim

    IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/822 ,  H01L21/8234 ,  H01L23/52 ,  H01L23/522 ,  H01L27/04 ,  H01L27/108 ,  H01L29/76

    CPC分类号： H01L21/76841 ,  H01L21/76846 ,  H01L21/7685 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a MIM capacitor, and method of fabricating the same, the MIM capacitor includes an interlayer insulating layer on a semiconductor substrate, a lower metal interconnection and a lower metal electrode in the interlayer insulating layer, an intermetal dielectric layer covering the lower metal interconnection, the lower metal electrode, and the interlayer insulating layer, a via hole exposing the lower metal interconnection, an upper metal interconnection groove crossing over the via hole, at least one capacitor trench region exposing the lower metal electrode, an upper metal interconnection filling the upper metal interconnection groove, the upper metal interconnection being electrically connected to the lower metal interconnection through the via hole, a dielectric layer covering inner surfaces of the at least one capacitor trench region, and an upper metal electrode surrounded by the dielectric layer to fill the at least one capacitor trench region.

    摘要翻译： 在MIM电容器及其制造方法中，MIM电容器包括在半导体衬底上的层间绝缘层，层间绝缘层中的下部金属互连和下部金属电极，覆盖下部金属互连的金属间介电层， 下金属电极和层间绝缘层，暴露下金属互连的通孔，与通孔相交的上金属互连槽，暴露下金属电极的至少一个电容器沟槽区，填充上金属互连的上金属互连 金属互连槽，所述上金属互连通过所述通孔电连接到所述下金属互连，覆盖所述至少一个电容器沟槽区的内表面的电介质层和被所述电介质层包围的上金属电极以填充 至少一个电容器沟槽区域。

    Method of fabricating semiconductor device by forming diffusion barrier layer selectively and semiconductor device fabricated thereby
    6.
    发明申请
    Method of fabricating semiconductor device by forming diffusion barrier layer selectively and semiconductor device fabricated thereby 有权
    通过选择性地形成扩散阻挡层制造半导体器件的方法和由此制造半导体器件

    公开(公告)号：US20050153544A1

    公开(公告)日：2005-07-14

    申请号：US11033189

    申请日：2005-01-11

    申请人： Bong-Seok Suh ,  Ki-Chul Park ,  Seung-Man Choi ,  Il-Ryong Kim

    发明人： Bong-Seok Suh ,  Ki-Chul Park ,  Seung-Man Choi ,  Il-Ryong Kim

    IPC分类号： H01L21/3205 ,  H01L21/285 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/52

    CPC分类号： H01L21/76844 ,  H01L21/2855

    摘要： In a method of fabricating a semiconductor device by selectively forming a diffusion barrier layer, and a semiconductor device fabricated thereby, a conductive pattern and an insulating layer, which covers the conductive pattern, are formed on a semiconductor substrate. The insulating layer is patterned, thereby forming an opening for exposing at least a portion of the conductive pattern. Then, a diffusion barrier layer is formed on the semiconductor substrate having the opening, using a selective deposition technique. The diffusion barrier layer is formed to a thickness that is less on the exposed conductive pattern than the thickness of the diffusion barrier layer on the insulating layer exposed inside the opening. Then, the diffusion barrier layer is etched, thereby forming a recessed diffusion barrier layer. In this manner, metal atoms are prevented from being diffused from a metal plug filling the opening or a metal interconnect to the insulating layer.

    摘要翻译： 在通过选择性地形成扩散阻挡层制造半导体器件的方法及其制造的半导体器件中，在半导体衬底上形成覆盖导电图案的导电图案和绝缘层。 对绝缘层进行图案化，从而形成用于暴露导电图案的至少一部分的开口。 然后，使用选择性沉积技术在具有开口的半导体衬底上形成扩散阻挡层。 扩散阻挡层形成为暴露在导体图案上的厚度小于暴露在开口内部的绝缘层上的扩散阻挡层的厚度。 然后，对扩散阻挡层进行蚀刻，从而形成凹陷扩散阻挡层。 以这种方式，防止金属原子从填充开口的金属插塞或与绝缘层的金属互连扩散。

    Apparatus and method for storing content flip list of digital media server using user input feedback
    9.
    发明授权
    Apparatus and method for storing content flip list of digital media server using user input feedback 有权
    使用用户输入反馈来存储数字媒体服务器的内容翻转列表的装置和方法

    公开(公告)号：US08510396B2

    公开(公告)日：2013-08-13

    申请号：US12859439

    申请日：2010-08-19

    申请人： Byung-Soo Lim ,  Ki-Chul Park ,  Sang-Won Ahn ,  Tae-Hwan Hwang ,  In-Young Shin ,  Joon-Oo Kim

    发明人： Byung-Soo Lim ,  Ki-Chul Park ,  Sang-Won Ahn ,  Tae-Hwan Hwang ,  In-Young Shin ,  Joon-Oo Kim

    IPC分类号： G06F15/16

    CPC分类号： G06F17/30058 ,  G06F17/30035

    摘要： Provided is a method for storing a content flip list of a digital media server using user input feedback. The method includes receiving a content request message from a user and transmitting the received request message to a media server, converting information received as a response to the request message into a page format, defining the converted information as a current page, and receiving and storing previous and next pages of the current page, and outputting the received current page through an output part.

    摘要翻译： 提供了一种使用用户输入反馈来存储数字媒体服务器的内容翻转列表的方法。 该方法包括从用户接收内容请求消息，并将接收的请求消息发送到媒体服务器，将作为对请求消息的响应接收的信息转换为页面格式，将转换的信息定义为当前页面，以及接收和存储 当前页面的上一页和下一页，并通过输出部分输出所接收的当前页面。