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    Slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect and method for planarizing surface of semiconductor device using the same
    1.
    发明授权
    Slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect and method for planarizing surface of semiconductor device using the same 有权
    用于补偿纳米形貌效果的化学机械抛光的浆料组合物及使用其的半导体器件的平坦化表面的方法

    公开(公告)号：US07833908B2

    公开(公告)日：2010-11-16

    申请号：US10556377

    申请日：2004-05-11

    申请人： Jea Gun Park ,  Takeo Katoh ,  Won Mo Lee ,  Hyun Goo Kang ,  Sung Jun Kim ,  Un Gyu Paik

    发明人： Jea Gun Park ,  Takeo Katoh ,  Won Mo Lee ,  Hyun Goo Kang ,  Sung Jun Kim ,  Un Gyu Paik

    IPC分类号： H01L21/302

    CPC分类号： C09G1/02 ,  H01L21/31053

    摘要： A slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect present on the surface of a wafer, and a method for planarizing the surface of a semiconductor device that utilizes the same are disclosed. The slurry composition of the present invention is aimed at compensating the nanotopography effect during chemical mechanical polishing process of the oxide layer formed on the surface of the wafer, and contains abrasive particles and an additive, wherein the size of the abrasive particles and the concentration of the additive are controlled within predetermined ranges in order to control the deviation of thickness (OTD) of the oxide layer below a certain level after the chemical mechanical polishing process.

    摘要翻译： 公开了一种能够补偿晶片表面上存在的纳米形貌效应的用于化学机械抛光的浆料组合物，以及用于平面化利用其的半导体器件的表面的方法。 本发明的浆料组合物旨在补偿在晶片表面形成的氧化物层的化学机械抛光过程中的纳米形貌作用，并且包含磨料颗粒和添加剂，其中磨料颗粒的尺寸和浓度 将添加剂控制在预定范围内，以便在化学机械抛光处理之后控制氧化物层的厚度（OTD）低于一定水平的偏差。

    POLISHING SLURRY, METHOD OF PRODUCING SAME, AND METHOD OF POLISHING SUBSTRATE
    3.
    发明申请
    POLISHING SLURRY, METHOD OF PRODUCING SAME, AND METHOD OF POLISHING SUBSTRATE 审中-公开
    抛光浆，其制造方法和抛光底材的方法

    公开(公告)号：US20090100765A1

    公开(公告)日：2009-04-23

    申请号：US12333179

    申请日：2008-12-11

    申请人： Dae Hyeong Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Un Gyu Paik ,  Jea Gun Park ,  Yong Kuk Kim

    发明人： Dae Hyeong Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Un Gyu Paik ,  Jea Gun Park ,  Yong Kuk Kim

    IPC分类号： C09K3/14

    CPC分类号： B82Y30/00 ,  C01F17/0043 ,  C01P2004/52 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/22 ,  C09G1/02 ,  C09K3/1463

    摘要： Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

    摘要翻译： 公开了一种抛光浆料，特别是用于化学机械抛光的浆料，其用于化学机械抛光工艺以使半导体层压体变平。 更具体地说，本发明提供一种制备浆料的方法，该方法对于在制造256兆D-RAM或更高的超高度集成半导体所需的浅沟槽隔离CMP工艺中，对用作阻挡膜的氮化物层具有高的去除选择性（ 设计规则为0.13μm以下），并且减少了在平坦化表面上的划痕的发生，以及使用其抛光衬底的方法。

    CMP slurry, preparation method thereof and method of polishing substrate using the same
    5.
    发明授权
    CMP slurry, preparation method thereof and method of polishing substrate using the same 有权
    CMP浆料，其制备方法和使用其的抛光基材的方法

    公开(公告)号：US08062547B2

    公开(公告)日：2011-11-22

    申请号：US11421965

    申请日：2006-06-02

    申请人： Un Gyu Paik ,  Jea Gun Park ,  Sang Kyun Kim ,  Ye Hwan Kim ,  Myoung Won Suh ,  Dae Hyeong Kim

    发明人： Un Gyu Paik ,  Jea Gun Park ,  Sang Kyun Kim ,  Ye Hwan Kim ,  Myoung Won Suh ,  Dae Hyeong Kim

    IPC分类号： C09K13/00

    CPC分类号： C23F3/04 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472 ,  H01L21/3212

    摘要： A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.

    摘要翻译： 提供包括抛光颗粒的CMP浆料，抛光颗粒包含有机改性的胶体二氧化硅。 另外，提供了制备CMP浆料的方法，包括以下步骤：制备包含有机改性二氧化硅的抛光颗粒; 将抛光颗粒转化成水状态; 并向抛光颗粒中加入纯水，亲水性添加剂和分散剂。 抛光颗粒可以使用溶胶 - 凝胶法合成。 根据本发明，可以制备具有优异抛光性能的浆料，其中改变胶体二氧化硅的表面性能以控制抛光颗粒的物理性质，并且可以确保所需的CMP去除速率同时最小化划痕的发生。

    Polishing slurry, method of producing same, and method of polishing substrate
    7.
    发明授权
    Polishing slurry, method of producing same, and method of polishing substrate 有权
    抛光浆料，其制造方法以及抛光底物的方法

    公开(公告)号：US07470295B2

    公开(公告)日：2008-12-30

    申请号：US11078538

    申请日：2005-03-11

    申请人： Dae Hyung Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Ho Seong Kim ,  Hyun Soo Park ,  Un Gyu Paik ,  Jae Gun Park ,  Yong Kuk Kim

    发明人： Dae Hyung Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Ho Seong Kim ,  Hyun Soo Park ,  Un Gyu Paik ,  Jae Gun Park ,  Yong Kuk Kim

    IPC分类号： C09G1/00 ,  C09G1/04 ,  C09G1/02

    CPC分类号： B24B37/044 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

    摘要： Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.

    摘要翻译： 本文公开了用于化学机械抛光的抛光浆料。 抛光浆料包括抛光颗粒，其具有包括分离的精细和大的抛光颗粒峰的粒度分布。 抛光浆料还包括中值粒径为50-150nm的抛光颗粒。 本发明提供了具有最佳抛光粒度的浆料，其中抛光粒度被控制，并且通过改变浆料的生产条件，可用于制备具有精细设计规则的半导体。 本发明还提供了研磨浆料及其制造方法，其中通过控制抛光粒度分布来确保理想的CMP去除速率和抑制刮痕，以及抛光基材的方法。

    Slurry for CMP and method of polishing substrate using same
    8.
    发明授权
    Slurry for CMP and method of polishing substrate using same 有权
    用于CMP的浆料和使用其的抛光衬底的方法

    公开(公告)号：US07364600B2

    公开(公告)日：2008-04-29

    申请号：US11127441

    申请日：2005-05-11

    申请人： Dae Hyeong Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Ho Seong Kim ,  Hyun Soo Park ,  Un Gyu Paik ,  Jae Gun Park ,  Yong Kuk Kim

    发明人： Dae Hyeong Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Ho Seong Kim ,  Hyun Soo Park ,  Un Gyu Paik ,  Jae Gun Park ,  Yong Kuk Kim

    IPC分类号： C09G1/02 ,  C09G1/04

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

    摘要： Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 μm or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 μm or less, particularly, the STI process.

    摘要翻译： 本文公开了抛光浆料及其制备方法。 抛光浆料在氧化物层的研磨速度与STI工艺的CMP中使用的氮化物层的研磨速度方面具有高选择性，该制造方法对于制造具有256兆D-RAM以上的设计规则的超高度集成半导体是必不可少的 ，例如，0.13mum以下的设计规则。 用于预处理抛光颗粒的方法和装置，分散装置和操作分散装置的方法，添加化学添加剂和添加量的方法以及用于转移样品的装置被适当地用于产生高性能 纳米二氧化铈浆料对于生产0.13毫米或更小的超高度集成半导体的工艺，特别是STI工艺。