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273 条记录 (耗时 0.029 秒)

    Redox shuttle for overdischarge protection in rechargeable lithium-ion batteries
    3.
    发明授权
    Redox shuttle for overdischarge protection in rechargeable lithium-ion batteries 有权
    可再充电锂离子电池中的过充电保护的氧化还原穿梭

    公开(公告)号：US07648801B2

    公开(公告)日：2010-01-19

    申请号：US11095185

    申请日：2005-03-31

    申请人： Jeffrey R. Dahn ,  Jun Chen

    发明人： Jeffrey R. Dahn ,  Jun Chen

    IPC分类号： H01M4/58 ,  H01M6/04 ,  H01G9/022

    CPC分类号： H01M10/0567 ,  H01M4/131 ,  H01M4/136 ,  H01M4/1391 ,  H01M4/485 ,  H01M4/5825 ,  H01M4/587 ,  H01M4/661 ,  H01M10/0525 ,  H01M10/4235 ,  H01M10/446 ,  H01M2004/021 ,  H01M2004/027 ,  H01M2010/4292 ,  H01M2300/0025

    摘要： A battery of series-connected rechargeable lithium ion cells each of which contains a negative electrode; a negative electrode current collector; a positive electrode; a positive electrode current collector; and an electrolyte comprising charge carrying medium, lithium salt and cyclable redox chemical shuttle. The negative electrode has a larger i rreversible first cycle capacity loss than that of the positive electrode, and is driven to a potential above that of the positive electrode if the cell is discharged to a state of cell reversal. The shuttle has an electrochemical potential above the positive electrode maximum normal operating potential, and prevents the negative electrode potential from reaching even higher and more destructive positive values during overdischarge. The current collector has a lithium alloying potential below the negative electrode minimum normal operating potential. The battery chemically limits or eliminates cell damage due to repeated overdischarge, and may operate without electronic overdischarge protection circuitry.

    摘要翻译： 一组串联的可再充电锂离子电池，每个锂离子电池含有负极; 负极集电体; 正极; 正极集电体; 以及包含电荷载体，锂盐和可循环氧化还原化学穿梭的电解质。 负极具有比正极的第一循环容量损失大的可逆的第一循环容量损失，并且如果电池被放电到电池反转的状态，则被驱动到比正极的电位高的电位。 梭子具有高于正电极最大正常工作电位的电化学电位，并且防止负极电极在过放电期间达到甚至更高和更具破坏性的正值。 集电器的锂合金电位低于负极最小正常工作电位。 电池由于重复的过度放电而化学地限制或消除电池损坏，并且可以在没有电子过放电保护电路的情况下工作。

    Bottle cap
    4.
    外观设计
    Bottle cap 有权

    公开(公告)号：USD1019259S1

    公开(公告)日：2024-03-26

    申请号：US29911297

    申请日：2023-08-31

    申请人： Jun Chen

    设计人： Jun Chen

    摘要： FIG. 1 is a top perspective view of a bottle cap, showing my new design;
    FIG. 2 is a bottom perspective view thereof;
    FIG. 3 is a front view thereof;
    FIG. 4 is a rear view thereof;
    FIG. 5 is a left side view thereof;
    FIG. 6 is a right side view thereof;
    FIG. 7 is a top view thereof; and,
    FIG. 8 is a bottom view thereof.
    The dashed broken lines depict portions of the bottle cap that form no part of the claim design.

    Making a memoristic array with an implanted hard mask
    5.
    发明授权
    Making a memoristic array with an implanted hard mask 有权

    公开(公告)号：US11569440B2

    公开(公告)日：2023-01-31

    申请号：US15412076

    申请日：2017-01-23

    申请人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    发明人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    IPC分类号： H01L43/12 ,  H01L27/24 ,  H01L45/00 ,  H01L27/22

    摘要： The invention disclosed a method to make an implanted hard mask with ultra-small dimensions for fabricating integrated nonvolatile random access memory. Instead of directly depositing hard mask material on top of the memory film stack element, we first make ultra-small VIA holes on a pattern transfer molding (PTM) layer using a reverse memory mask, then fill in the hard mask material into the VIA holes within the PTM material. Ultra-small hard mask pillars are formed after removing the PTM material. To improve the adhesion of the hard mask pillars with the underneath memory stack element, a hard mask sustaining element (HMSE) is added below PTM. Due to a better materials adhesion between HMSE and the hard mask, a stronger hard mask array can be formed.

    COMPOSITE MULTI-STACK SEED LAYER TO IMPROVE PMA FOR PERPENDICULAR MAGNETIC PINNING
    6.
    发明申请
    COMPOSITE MULTI-STACK SEED LAYER TO IMPROVE PMA FOR PERPENDICULAR MAGNETIC PINNING 有权

    公开(公告)号：US20210343934A1

    公开(公告)日：2021-11-04

    申请号：US16865810

    申请日：2020-05-04

    申请人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    发明人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    IPC分类号： H01L43/10 ,  H01L43/08 ,  H01F10/30 ,  H01F10/32 ,  H01F10/12

    摘要： The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

    BOTTOM-PINNED MAGNETIC RANDOM ACCESS MEMORY HAVING A COMPOSITE SOT STRUCTURE
    7.
    发明申请
    BOTTOM-PINNED MAGNETIC RANDOM ACCESS MEMORY HAVING A COMPOSITE SOT STRUCTURE 有权

    公开(公告)号：US20210327960A1

    公开(公告)日：2021-10-21

    申请号：US16849571

    申请日：2020-04-15

    申请人： RONGFU XIAO ,  Yimin Guo ,  Jun Chen

    发明人： RONGFU XIAO ,  Yimin Guo ,  Jun Chen

    IPC分类号： H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16

    摘要： An ultra-fast magnetic random access memory (MRAM) comprises a three terminal bottom-pinned composite SOT magnetic tunneling junction (bCSOT-MTJ) element including (counting from top to bottom) a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer. Such bCSOT-MTJ element will have a very fast (down to picoseconds) switching speed and consume much less power suitable level 1 or 2 cache application for SMRAM, CPU, GPU and TPU.

    Synthetic magnetic pinning element having strong antiferromagnetic coupling
    8.
    发明授权
    Synthetic magnetic pinning element having strong antiferromagnetic coupling 有权

    公开(公告)号：US11081154B1

    公开(公告)日：2021-08-03

    申请号：US16773283

    申请日：2020-01-27

    申请人： Rongfu Xiao ,  Yimin Guo ,  Jun Chen

    发明人： Rongfu Xiao ,  Yimin Guo ,  Jun Chen

    IPC分类号： G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

    摘要： The present invention discloses an enhanced synthetic antiferromagnetic (eSAF) element with a very strong RKKY coupling comprising a magnetic pinning layer having a face-center-cubic (fcc) crystalline structure and a magnetic reference layer having a body-center-cubic (bcc) crystalline structure which are antiferromagnetically coupled by a composite non-magnetic spacer (CnmS) containing a bi-layer of (Ru, Rh or Ir)/Cr or tri-layer of (Ru, Rh, or Ir)/(W, Mo, or V)/Cr. With such eSAF, a strong magnetic pinning element is formed which can be used to make various thin STT-MRAM film stacks with good thermal and magnetic stability while maintaining high TMR value.

    Display for embedded intelligence
    10.
    发明授权
    Display for embedded intelligence 有权
    显示嵌入式智能

    公开(公告)号：US09262035B1

    公开(公告)日：2016-02-16

    申请号：US13443200

    申请日：2012-04-10

    申请人： Paul Gustafson ,  Hob Anthony Spillane ,  Jun Chen ,  Khurram Mahmood

    发明人： Paul Gustafson ,  Hob Anthony Spillane ,  Jun Chen ,  Khurram Mahmood

    IPC分类号： G06F3/048 ,  G06F17/25

    CPC分类号： G06F3/048 ,  G06F9/44 ,  G06F9/451 ,  G06F17/30572 ,  G06Q30/02

    摘要： A system for displaying an embedded intelligence applet comprises a processor and a memory. The processor is configured to provide display information to display in the embedded intelligence applet window and to provide an indication to display the embedded intelligence applet window in an opaque mode. The processor is configured to determine whether an indication to activate a window other than the embedded intelligence applet window is received. The processor is configured to provide an indication to display the embedded intelligence applet window in a partially transparent mode in the event that an indication to activate a window other than the embedded intelligence applet window is received. The memory is coupled to the processor and is configured to provide the processor with instructions.

    摘要翻译： 用于显示嵌入式智能小应用程序的系统包括处理器和存储器。 处理器被配置为提供显示信息以在嵌入式智能小应用程序窗口中显示并且提供以不透明模式显示嵌入式智能小应用程序窗口的指示。 处理器被配置为确定是否接收到激活除嵌入式智能小程序窗口之外的窗口的指示。 处理器被配置为在接收到激活不同于嵌入式智能小应用程序窗口的窗口的指示的情况下，提供在部分透明模式下显示嵌入式智能小应用程序窗口的指示。 存储器耦合到处理器并且被配置为向处理器提供指令。