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273 条记录 (耗时 0.037 秒)

    Display for embedded intelligence
    1.
    发明授权
    Display for embedded intelligence 有权
    显示嵌入式智能

    公开(公告)号：US09262035B1

    公开(公告)日：2016-02-16

    申请号：US13443200

    申请日：2012-04-10

    申请人： Paul Gustafson ,  Hob Anthony Spillane ,  Jun Chen ,  Khurram Mahmood

    发明人： Paul Gustafson ,  Hob Anthony Spillane ,  Jun Chen ,  Khurram Mahmood

    IPC分类号： G06F3/048 ,  G06F17/25

    CPC分类号： G06F3/048 ,  G06F9/44 ,  G06F9/451 ,  G06F17/30572 ,  G06Q30/02

    摘要： A system for displaying an embedded intelligence applet comprises a processor and a memory. The processor is configured to provide display information to display in the embedded intelligence applet window and to provide an indication to display the embedded intelligence applet window in an opaque mode. The processor is configured to determine whether an indication to activate a window other than the embedded intelligence applet window is received. The processor is configured to provide an indication to display the embedded intelligence applet window in a partially transparent mode in the event that an indication to activate a window other than the embedded intelligence applet window is received. The memory is coupled to the processor and is configured to provide the processor with instructions.

    摘要翻译： 用于显示嵌入式智能小应用程序的系统包括处理器和存储器。 处理器被配置为提供显示信息以在嵌入式智能小应用程序窗口中显示并且提供以不透明模式显示嵌入式智能小应用程序窗口的指示。 处理器被配置为确定是否接收到激活除嵌入式智能小程序窗口之外的窗口的指示。 处理器被配置为在接收到激活不同于嵌入式智能小应用程序窗口的窗口的指示的情况下，提供在部分透明模式下显示嵌入式智能小应用程序窗口的指示。 存储器耦合到处理器并且被配置为向处理器提供指令。

    Bottle cap
    2.
    外观设计
    Bottle cap 有权

    公开(公告)号：USD1019259S1

    公开(公告)日：2024-03-26

    申请号：US29911297

    申请日：2023-08-31

    申请人： Jun Chen

    设计人： Jun Chen

    摘要： FIG. 1 is a top perspective view of a bottle cap, showing my new design;
    FIG. 2 is a bottom perspective view thereof;
    FIG. 3 is a front view thereof;
    FIG. 4 is a rear view thereof;
    FIG. 5 is a left side view thereof;
    FIG. 6 is a right side view thereof;
    FIG. 7 is a top view thereof; and,
    FIG. 8 is a bottom view thereof.
    The dashed broken lines depict portions of the bottle cap that form no part of the claim design.

    Making a memoristic array with an implanted hard mask
    3.
    发明授权
    Making a memoristic array with an implanted hard mask 有权

    公开(公告)号：US11569440B2

    公开(公告)日：2023-01-31

    申请号：US15412076

    申请日：2017-01-23

    申请人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    发明人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    IPC分类号： H01L43/12 ,  H01L27/24 ,  H01L45/00 ,  H01L27/22

    摘要： The invention disclosed a method to make an implanted hard mask with ultra-small dimensions for fabricating integrated nonvolatile random access memory. Instead of directly depositing hard mask material on top of the memory film stack element, we first make ultra-small VIA holes on a pattern transfer molding (PTM) layer using a reverse memory mask, then fill in the hard mask material into the VIA holes within the PTM material. Ultra-small hard mask pillars are formed after removing the PTM material. To improve the adhesion of the hard mask pillars with the underneath memory stack element, a hard mask sustaining element (HMSE) is added below PTM. Due to a better materials adhesion between HMSE and the hard mask, a stronger hard mask array can be formed.

    COMPOSITE MULTI-STACK SEED LAYER TO IMPROVE PMA FOR PERPENDICULAR MAGNETIC PINNING
    4.
    发明申请
    COMPOSITE MULTI-STACK SEED LAYER TO IMPROVE PMA FOR PERPENDICULAR MAGNETIC PINNING 有权

    公开(公告)号：US20210343934A1

    公开(公告)日：2021-11-04

    申请号：US16865810

    申请日：2020-05-04

    申请人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    发明人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

    IPC分类号： H01L43/10 ,  H01L43/08 ,  H01F10/30 ,  H01F10/32 ,  H01F10/12

    摘要： The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

    BOTTOM-PINNED MAGNETIC RANDOM ACCESS MEMORY HAVING A COMPOSITE SOT STRUCTURE
    5.
    发明申请
    BOTTOM-PINNED MAGNETIC RANDOM ACCESS MEMORY HAVING A COMPOSITE SOT STRUCTURE 有权

    公开(公告)号：US20210327960A1

    公开(公告)日：2021-10-21

    申请号：US16849571

    申请日：2020-04-15

    申请人： RONGFU XIAO ,  Yimin Guo ,  Jun Chen

    发明人： RONGFU XIAO ,  Yimin Guo ,  Jun Chen

    IPC分类号： H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16

    摘要： An ultra-fast magnetic random access memory (MRAM) comprises a three terminal bottom-pinned composite SOT magnetic tunneling junction (bCSOT-MTJ) element including (counting from top to bottom) a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer. Such bCSOT-MTJ element will have a very fast (down to picoseconds) switching speed and consume much less power suitable level 1 or 2 cache application for SMRAM, CPU, GPU and TPU.

    Synthetic magnetic pinning element having strong antiferromagnetic coupling
    6.
    发明授权
    Synthetic magnetic pinning element having strong antiferromagnetic coupling 有权

    公开(公告)号：US11081154B1

    公开(公告)日：2021-08-03

    申请号：US16773283

    申请日：2020-01-27

    申请人： Rongfu Xiao ,  Yimin Guo ,  Jun Chen

    发明人： Rongfu Xiao ,  Yimin Guo ,  Jun Chen

    IPC分类号： G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

    摘要： The present invention discloses an enhanced synthetic antiferromagnetic (eSAF) element with a very strong RKKY coupling comprising a magnetic pinning layer having a face-center-cubic (fcc) crystalline structure and a magnetic reference layer having a body-center-cubic (bcc) crystalline structure which are antiferromagnetically coupled by a composite non-magnetic spacer (CnmS) containing a bi-layer of (Ru, Rh or Ir)/Cr or tri-layer of (Ru, Rh, or Ir)/(W, Mo, or V)/Cr. With such eSAF, a strong magnetic pinning element is formed which can be used to make various thin STT-MRAM film stacks with good thermal and magnetic stability while maintaining high TMR value.

    System for Harvesting Water Wave Energy
    8.
    发明申请
    System for Harvesting Water Wave Energy 有权
    水波能量收获系统

    公开(公告)号：US20160040648A1

    公开(公告)日：2016-02-11

    申请号：US14819142

    申请日：2015-08-05

    申请人： Zhong Lin Wang ,  Yanjie Su ,  Guang Zhu ,  Jun Chen

    发明人： Zhong Lin Wang ,  Yanjie Su ,  Guang Zhu ,  Jun Chen

    IPC分类号： F03B13/18 ,  F03B13/10

    CPC分类号： F03B13/14 ,  F03B13/20 ,  F05B2220/709 ,  F05B2280/40 ,  F05B2280/4005 ,  F05B2280/5011 ,  H02H1/04 ,  Y02E10/38

    摘要： A generator for harvesting energy from water in motion includes a sheet of a hydrophobic material, having a first side and an opposite second side, that is triboelectrically more negative than water. A first electrode sheet is disposed on the second side of the sheet of a hydrophobic material. A second electrode sheet is disposed on the second side of the sheet of a hydrophobic material and is spaced apart from the first electrode sheet. Movement of the water across the first side induces an electrical potential imbalance between the first electrode sheet and the second electrode sheet.

    摘要翻译： 用于从运动中的水中收集能量的发生器包括具有第一侧和相对的第二侧的疏水材料片，其比水更摩擦地更负。 第一电极片设置在疏水材料片的第二面上。 第二电极片设置在疏水材料的片材的第二侧上并与第一电极片间隔开。 水的移动通过第一侧引起第一电极片和第二电极片之间的电势不平衡。

    Method and system for amplitude digitization of nuclear radiation pulses
    9.
    发明授权
    Method and system for amplitude digitization of nuclear radiation pulses 有权
    核辐射脉冲振幅数字化方法与系统

    公开(公告)号：US09182500B2

    公开(公告)日：2015-11-10

    申请号：US13807765

    申请日：2012-05-22

    申请人： Yonggang Wang ,  Wensong Zhu ,  Jun Chen

    发明人： Yonggang Wang ,  Wensong Zhu ,  Jun Chen

    IPC分类号： G01T1/17

    CPC分类号： G01T1/17

    摘要： Disclosed are methods and systems for amplitude digitization of nuclear radiation pulses. The method includes: applying a constant fraction discrimination (CFD) timing process on a subject current signal and outputting a CFD timing signal; applying a shaping process on the subject current signal to obtain a subject shaped signal; comparing, from a time To, values taken at the same time by the subject shaped signal and a dynamic threshold signal, and taking a time Tot as an over-threshold time if the value of the dynamic threshold signal changes from less than the value of the subject shaped signal to not less than the value of the subject shaped signal at the time Tot, wherein a time length between the time To and the arrival time Td of the subject current signal is preset as ΔT; converting a time length between the time Td and the time Tot into a digital quantity as a digitized value of the amplitude of the nuclear radiation pulse; wherein for any two subject shaped signals having amplitudes Vot1 and Vot2, respectively, the dynamic threshold signal satisfies an equation Tot ⁢ ⁢ 2 - To Vot ⁢ ⁢ 2 = Tot ⁢ ⁢ 1 - To Vot ⁢ ⁢ 1 , Tot1 represents an over-threshold time for one of the subject shaped signals compared with the dynamic threshold signal, and Tot2 represents an over-threshold time for the other of the subject shaped signals compared with the dynamic threshold signal.

    摘要翻译： 公开了用于核辐射脉冲幅度数字化的方法和系统。 该方法包括：对目标电流信号应用恒定分数判别（CFD）定时处理并输出CFD定时信号; 对被摄体电流信号施加整形处理以获得被摄体成像信号; 从时间To比较由对象整形信号和动态阈值信号同时获取的值，并且如果动态阈值信号的值从小于该阈值的值，则将时间Tot作为过阈值时间 被摄体整形信号不小于在时间Tot处的被摄体成像信号的值，其中，被摄体电流信号的时间To和到达时间Td之间的时间长度被预设为＆Dgr; T; 将时间Td和时间Tot之间的时间长度转换为数字量作为核辐射脉冲幅度的数字化值; 其中对于分别具有幅度Vot1和Vot2的任何两个被摄体成像信号，动态阈值信号满足等式Tot≠2-To Vot≠2 = Tot≠1至V⁢1，Tot1表示过阈值 与动态阈值信号相比，对象成像信号之一的时间，Tot2表示与动态阈值信号相比的对象成形信号中的另一个的过阈值时间。