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    Semiconductor capacitor structure and method for manufacturing the same
    2.
    发明授权
    Semiconductor capacitor structure and method for manufacturing the same 有权
    半导体电容器结构及其制造方法

    公开(公告)号：US07544985B2

    公开(公告)日：2009-06-09

    申请号：US11312952

    申请日：2005-12-19

    申请人： Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Jeong-Nam Han

    发明人： Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Jeong-Nam Han

    IPC分类号： H01L27/108

    CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/91

    摘要： In one embodiment, a semiconductor device comprises a base and a tapered wall formed on the base. The wall has a midline and also has an inner sidewall and an outer sidewall. The inner sidewall and the outer sidewall are substantially symmetrical with each other in relation to the midline. Thus, the reliability of the semiconductor capacitor structure can be improved and the throughput can be increased. Also, further scaling down of semiconductor devices can be facilitated with the principles of the present invention.

    摘要翻译： 在一个实施例中，半导体器件包括形成在基底上的基部和锥形壁。 壁具有中线并且还具有内侧壁和外侧壁。 内侧壁和外侧壁相对于中线彼此基本对称。 因此，可以提高半导体电容器结构的可靠性，并且可以提高吞吐量。 此外，根据本发明的原理，可以促进半导体器件的进一步缩小。

    Semiconductor capacitor structure and method for manufacturing the same
    3.
    发明申请
    Semiconductor capacitor structure and method for manufacturing the same 有权
    半导体电容器结构及其制造方法

    公开(公告)号：US20050037562A1

    公开(公告)日：2005-02-17

    申请号：US10835142

    申请日：2004-04-28

    申请人： Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Jeong-Nam Han

    发明人： Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Jeong-Nam Han

    IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/8234 ,  H01L21/8244

    CPC分类号： H01L28/91 ,  H01L27/10852 ,  Y10S438/978

    摘要： In one embodiment, a semiconductor device comprises a base and a tapered wall formed on the base. The wall has a midline and also has an inner sidewall and an outer sidewall. The inner sidewall and the outer sidewall are substantially symmetrical with each other in relation to the midline. Thus, the reliability of the semiconductor capacitor structure can be improved and the throughput can be increased. Also, further scaling down of semiconductor devices can be facilitated with the principles of the present invention.

    摘要翻译： 在一个实施例中，半导体器件包括形成在基底上的基部和锥形壁。 壁具有中线并且还具有内侧壁和外侧壁。 内侧壁和外侧壁相对于中线彼此基本对称。 因此，可以提高半导体电容器结构的可靠性，并且可以提高吞吐量。 此外，根据本发明的原理，可以促进半导体器件的进一步缩小。

    Transistor having a metal nitride layer pattern, etchant and methods of forming the same
    6.
    发明授权
    Transistor having a metal nitride layer pattern, etchant and methods of forming the same 有权
    具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法

    公开(公告)号：US08637942B2

    公开(公告)日：2014-01-28

    申请号：US12461992

    申请日：2009-08-31

    申请人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

    发明人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

    IPC分类号： H01L29/78

    CPC分类号： H01L21/32134 ,  C09K13/02 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

    摘要： A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.

    摘要翻译： 提供具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法。 可以在半导体衬底上形成栅极绝缘层和/或金属氮化物层。 掩模层可以形成在金属氮化物层上。 使用掩模层作为蚀刻掩模，可以对金属氮化物层进行蚀刻处理，形成金属氮化物层图案。 可以具有氧化剂，螯合剂和/或pH调节混合物的蚀刻剂可以进行蚀刻。 在形成晶体管期间，这些方法可以减少金属氮化物层图案下的栅极绝缘层的蚀刻损伤。

    ETCHING SOLUTION FOR REMOVAL OF OXIDE FILM, METHOD FOR PREPARING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    9.
    发明申请
    ETCHING SOLUTION FOR REMOVAL OF OXIDE FILM, METHOD FOR PREPARING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
    用于除去氧化膜的蚀刻溶液，其制备方法和制备半导体器件的方法

    公开(公告)号：US20090023265A1

    公开(公告)日：2009-01-22

    申请号：US12243728

    申请日：2008-10-01

    申请人： CHANG-SUP MUN ,  Hyung-Ho Ko ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

    发明人： CHANG-SUP MUN ,  Hyung-Ho Ko ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

    IPC分类号： H01L21/762 ,  H01L21/306 ,  H01L21/02

    CPC分类号： H01L21/31111 ,  H01L21/76224 ,  H01L28/40

    摘要： Provided are an anionic surfactant-containing etching solution for removal of an oxide film, preparation methods thereof, and methods of fabricating a semiconductor device using the etching solution. The etching solution includes a hydrofluoric acid (HF), deionized water, and an anionic surfactant. The anionic surfactant is a compound in which an anime salt is added as a counter ion, as represented by R1—OSO3−HA+, R1—CO2−HA+,R1—PO42—(HA+)2,(R1)2—PO4—HA+, or R1—SO3—HA+ where R1 is a straight or branched hydrocarbon group of C4 to C22 and A is ammonia or amine. The etching solution provides a high etching selectivity ratio of an oxide film to a nitride film or a polysilicon film. Therefore, in a semiconductor device fabrication process such as a STI device isolation process or a capacitor formation process, when an oxide film is exposed together with a nitride film or a polysilicon film, the etching solution can be efficiently used in selectively removing only the oxide film.

    摘要翻译： 提供了一种用于去除氧化膜的含阴离子表面活性剂的蚀刻溶液，其制备方法以及使用该蚀刻溶液制造半导体器件的方法。 蚀刻溶液包括氢氟酸（HF），去离子水和阴离子表面活性剂。 阴离子表面活性剂是其中以R1-OSO3-HA +，R1-CO2-HA +，R1-PO42-（HA +）2，（R1）2-PO4-HA + 或R1-SO3-HA +，其中R1是C4至C22的直链或支链烃基，A是氨或胺。 蚀刻溶液提供氧化膜与氮化物膜或多晶硅膜的高蚀刻选择性比。 因此，在诸如STI器件隔离处理或电容器形成工艺的半导体器件制造工艺中，当氧化物膜与氮化物膜或多晶硅膜一起暴露时，可以有效地使用蚀刻溶液来仅选择性地除去氧化物 电影。

    Apparatus for drying substrate and method thereof
    10.
    发明授权
    Apparatus for drying substrate and method thereof 失效
    干燥基材的设备及其方法

    公开(公告)号：US07322385B2

    公开(公告)日：2008-01-29

    申请号：US11158912

    申请日：2005-06-22

    申请人： Sang-Yong Kim ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Gwan Shim

    发明人： Sang-Yong Kim ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Gwan Shim

    IPC分类号： B65B1/04

    CPC分类号： H01L21/67051 ,  H01L21/67034

    摘要： An apparatus for drying a substrate using the Marangoni effect is disclosed. The apparatus includes a rotatable supporting portion on which a substrate is placed. A first nozzle for supplying de-ionized water and a second nozzle for supplying isopropyl alcohol vapor are provided on the supporting portion. When the isopropyl alcohol vapor is supplied to the center of the substrate at the initial stage, the amount of alcohol that reaches the substrate is controlled by a controlling portion such that the amount of the second liquid gradually increases.

    摘要翻译： 公开了一种使用Marangoni效应对基板进行干燥的装置。 该装置包括可旋转的支撑部分，放置基板。 用于提供去离子水的第一喷嘴和用于提供异丙醇蒸气的第二喷嘴设置在支撑部分上。 当在初始阶段将异丙醇蒸汽供应到基材的中心时，通过控制部分控制到达基板的醇的量，使得第二液体的量逐渐增加。