Pyranocoumarin derivatives
    1.
    发明授权
    Pyranocoumarin derivatives 失效
    吡喃香豆素衍生物

    公开(公告)号:US07115655B2

    公开(公告)日:2006-10-03

    申请号:US10510923

    申请日:2002-04-09

    IPC分类号: A61K31/35

    CPC分类号: C07D493/04

    摘要: The present invention relates to compounds of the following formula (I) or pharmaceutically acceptable salts thereof. The present invention also relates to use for a cognitive-enhancing agent of compounds of the following formula (I) or pharmaceutically acceptable salts thereof and to a process for preparing the same. Further, the present invention relates to use for a congnitive-enhancing agent of decursin of the following formula (II) or pharmaceutically acceptable salts thereof. In addition, the present invention relates to extracts of Angelica gigantis Radix comprising decursin of the following formula (II), having cognitive-enhancing effects.

    摘要翻译: 本发明涉及下式(I)的化合物或其药学上可接受的盐。 本发明还涉及下式(I)化合物或其药学上可接受的盐的认知增强剂及其制备方法的用途。 此外,本发明涉及下式(II)的前胡素的认知增强剂或其药学上可接受的盐的用途。 此外,本发明涉及包含具有认知增强作用的下式(II)的前胡素的当归提取物。

    Pyranocoumarin derivatives
    2.
    发明申请
    Pyranocoumarin derivatives 失效
    吡喃香豆素衍生物

    公开(公告)号:US20050222245A1

    公开(公告)日:2005-10-06

    申请号:US10510923

    申请日:2002-04-09

    CPC分类号: C07D493/04

    摘要: The present invention relates to compounds of the following formula (I) or pharmaceutically acceptable salts thereof. The present invention also relates to use for a cognitive-enhancing agent of compounds of the following formula (I) or pharmaceutically acceptable salts thereof and to a process for preparing the same. Further, the present invention relates to use for a congnitive-enhancing agent of decursin of the following formula (II) or pharmaceutically acceptable salts thereof. In addition, the present invention relates to extracts of Angelica gigantis Radix comprising decursin of the following formula (II), having cognitive-enhancing effects.

    摘要翻译: 本发明涉及下式(I)的化合物或其药学上可接受的盐。 本发明还涉及下式(I)化合物或其药学上可接受的盐的认知增强剂及其制备方法的用途。 此外,本发明涉及下式(II)的前胡素的认知增强剂或其药学上可接受的盐的用途。 此外,本发明涉及包含具有认知增强作用的下式(II)的前胡素的当归提取物。

    CLEANING ROBOT SYSTEM AND ITS METHOD FOR CONTROLING
    3.
    发明申请
    CLEANING ROBOT SYSTEM AND ITS METHOD FOR CONTROLING 审中-公开
    清洁机器人系统及其控制方法

    公开(公告)号:US20130199570A1

    公开(公告)日:2013-08-08

    申请号:US13825150

    申请日:2011-04-27

    IPC分类号: A47L9/00

    摘要: Disclosed are a cleaning robot system and its method for controlling which make it possible to reliably and quickly clean with the aid of the cleaning robot. The cleaning robot system comprises at least one external device each formed of an indicator and a virtual wall setting function, with the aid of which cleaning work can be performed by the unit of blocks about a cleaning area reference point, not leaving non-cleaned area behind. Since the access of the cleaning robot can be restricted by means of a virtual wall set by an external device, any damages of furniture due to a collision of the cleaning robot can be prevented, and the cleaning robot can be barred from escaping from the set cleaning area.

    摘要翻译: 公开了一种清洁机器人系统及其控制方法,其使得可以借助于清洁机器人可靠且快速地清洁。 清洁机器人系统包括至少一个外部设备,每个外部设备由指示器和虚拟墙壁设置功能构成,借助于这些单元可以通过清洁区域参考点执行清洁工作,而不会留下未清洁区域 背后。 由于可以通过外部设备设置的虚拟壁来限制清洁机器人的通路,所以可以防止由于清洁机器人的碰撞而导致的家具的任何损坏,并且可以禁止清洁机器人从集合中逸出 清洁区域。

    Flat panel display
    6.
    发明授权
    Flat panel display 有权
    平板显示器

    公开(公告)号:US08350267B2

    公开(公告)日:2013-01-08

    申请号:US12104749

    申请日:2008-04-17

    IPC分类号: H01L27/14

    摘要: A high-speed flat panel display has thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, which have different resistance values than each other or have different geometric structures than each other. The flat panel display comprises a pixel array portion where a plurality of pixels are arranged, and a driving circuit portion for driving the pixels of the pixel array portion. The thin film transistors in the pixel array portion and the driving circuit portion have different resistance values in their gate regions or drain regions than each other, or have different geometric structures than each other. One thin film transistor has a zigzag shape in its gate region or drain region or has an offset region.

    摘要翻译: 高速平板显示器在其中排列有多个像素的像素阵列部分中具有薄膜晶体管,以及用于驱动像素阵列部分的像素的驱动电路部分,其具有彼此不同的电阻值或具有不同的像素阵列部分 几何结构比彼此。 平板显示器包括其中布置有多个像素的像素阵列部分和用于驱动像素阵列部分的像素的驱动电路部分。 像素阵列部分和驱动电路部分中的薄膜晶体管在其栅极区域或漏极区域中具有彼此不同的电阻值,或者具有彼此不同的几何结构。 一个薄膜晶体管在其栅极区域或漏极区域中具有锯齿形状或具有偏移区域。

    Method of Manufacturing Thin Film Transistor, Thin Film Transistor Manufactured Using the Method, Method of Manufacturing Organic Light-Emitting Display Apparatus, and Organic Light-Emitting Display Apparatus Manufactured Using the Method
    7.
    发明申请
    Method of Manufacturing Thin Film Transistor, Thin Film Transistor Manufactured Using the Method, Method of Manufacturing Organic Light-Emitting Display Apparatus, and Organic Light-Emitting Display Apparatus Manufactured Using the Method 有权
    使用该方法制造薄膜晶体管的薄膜晶体管的制造方法,制造有机发光显示装置的方法和使用该方法制造的有机发光显示装置

    公开(公告)号:US20120326157A1

    公开(公告)日:2012-12-27

    申请号:US13313555

    申请日:2011-12-07

    摘要: A method of manufacturing a TFT, including forming a buffer layer, an amorphous silicon layer, an insulating layer, and a first conductive layer on a substrate, forming a polycrystalline silicon layer by crystallizing the amorphous silicon layer, forming a semiconductor layer, a gate insulating layer, and a gate electrode that have a predetermined shape by simultaneously patterning the polycrystalline silicon layer, the insulating layer, and the first conductive layer, wherein the polycrystalline silicon layer is further etched to produce an undercut recessed a distance compared to sidewalls of the insulating layer and the first conductive layer, forming source and drain regions within the semiconductor layer by doping corresponding portions of the semiconductor layer, forming an interlayer insulating layer on the gate electrode, the interlayer insulating layer covering the gate insulating layer and forming source and drain electrodes that are electrically connected to source and drain regions respectively.

    摘要翻译: 一种制造TFT的方法,包括在衬底上形成缓冲层,非晶硅层,绝缘层和第一导电层,通过使非晶硅层结晶形成多晶硅层,形成半导体层,栅极 绝缘层和通过同时构图多晶硅层,绝缘层和第一导电层而具有预定形状的栅电极,其中进一步蚀刻多晶硅层以产生凹陷距离相比于 绝缘层和第一导电层,通过掺杂半导体层的相应部分在半导体层内形成源极和漏极区域,在栅电极上形成层间绝缘层,覆盖栅极绝缘层的层间绝缘层和形成源极和漏极 与源极和漏极电连接的电极 地区。

    Flat panel display device with polycrystalline silicon thin film transistor
    9.
    发明授权
    Flat panel display device with polycrystalline silicon thin film transistor 有权
    具有多晶硅薄膜晶体管的平板显示装置

    公开(公告)号:US08049220B2

    公开(公告)日:2011-11-01

    申请号:US11942460

    申请日:2007-11-19

    IPC分类号: H01L27/14

    摘要: The present invention relates to a flat panel display device comprising a polycrystalline silicon thin film transistor and provides a flat panel display device having improved characteristics by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a driving circuit portion and active channel regions of pixel portion. This may be achieved by having a different number of grain boundaries included in the polycrystalline silicon thin film formed in active channel regions of a switching thin film transistor and a driving thin film transistor formed in the pixel portion, and by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a thin film transistor for driving the pixel portion for each red, green and blue of the pixel portion. Further, this may be achieved by having a different number of grain boundaries included in polycrystalline silicon formed in active channel regions of an NMOS thin film transistor and a PMOS thin film transistor for forming CMOS transistor used in flat panel display device, thereby constructing a thin film transistor to obtain the improved characteristics for each transistor.

    摘要翻译: 本发明涉及一种包括多晶硅薄膜晶体管的平板显示装置,通过在驱动电路的有源沟道区域中形成的多晶硅薄膜中包含不同数量的晶界,提供具有改进特性的平板显示装置 像素部分和有源沟道区域。 这可以通过在形成在像素部分中的开关薄膜晶体管和驱动薄膜晶体管的有源沟道区域中形成的多晶硅薄膜中包含不同数量的晶界,并且通过具有不同数量的晶粒来实现 包括在形成在用于驱动像素部分的每个红,绿和蓝的像素部分的薄膜晶体管的有源沟道区域中的多晶硅薄膜中的边界。 此外,这可以通过在NMOS薄膜晶体管的有源沟道区域中形成的多晶硅中包含不同数量的晶界和用于形成用于平板显示器件的CMOS晶体管的PMOS薄膜晶体管来实现,从而构造薄的 以获得每个晶体管的改进特性。