公开(公告)号：US20100075452A1

公开(公告)日：2010-03-25

申请号：US12627714

申请日：2009-11-30

申请人： Jeong-wook LEE ,  Youn-joon Song

发明人： Jeong-wook LEE ,  Youn-joon Song

IPC分类号： H01L33/26

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/12

摘要： Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.

摘要翻译： 提供了一种在基板上形成纹理结构的半导体发光二极管。 在制造半导体发光二极管的方法中，在基板上形成金属层，通过阳极氧化金属层形成具有孔的金属氧化物层。 金属氧化物层本身可以用作纹理结构图案，或者纹理结构图案可以通过在基板中形成孔或在对应于金属氧化物层的孔的金属氧化物层下面的材料层来形成。 通过在纹理结构图案上依次形成第一半导体层，有源层和第二半导体层来完成半导体发光二极管的制造。

公开(公告)号：US20090181484A1

公开(公告)日：2009-07-16

申请号：US12407361

申请日：2009-03-19

申请人： Jeong-wook LEE ,  Youn-joon SUNG ,  Ho-sun PAEK ,  Hyun-soo KIM ,  Joo-sung KIM ,  Suk-ho YOON

发明人： Jeong-wook LEE ,  Youn-joon SUNG ,  Ho-sun PAEK ,  Hyun-soo KIM ,  Joo-sung KIM ,  Suk-ho YOON

IPC分类号： H01L21/28

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

摘要翻译： 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US20100081221A1

公开(公告)日：2010-04-01

申请号：US12630880

申请日：2009-12-04

申请人： Jeong-wook LEE ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Jeong-wook LEE ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

摘要翻译： 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。

公开(公告)号：US20100009477A1

公开(公告)日：2010-01-14

申请号：US12563524

申请日：2009-09-21

申请人： Jeong-wook LEE

发明人： Jeong-wook LEE

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes a substrate, at least two light emitting cells located on the substrate and formed by stacking semiconductor material layers, a reflection layer and a transparent insulating layer sequentially stacked between the light emitting cells, and a transparent electrode covering the upper surface of the light emitting cells.

摘要翻译： 提供半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：基板，位于基板上的至少两个发光单元，其通过层叠半导体材料层，反射层和依次层叠在发光单元之间的透明绝缘层形成，以及覆盖上部的透明电极 发光单元的表面。

公开(公告)号：US20070262330A1

公开(公告)日：2007-11-15

申请号：US11737479

申请日：2007-04-19

申请人： Jeong-wook LEE ,  Jin-seo IM ,  Bok-ki MIN ,  Kwang-hyeon BAIK ,  Heon-su JEON

发明人： Jeong-wook LEE ,  Jin-seo IM ,  Bok-ki MIN ,  Kwang-hyeon BAIK ,  Heon-su JEON

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/007

摘要： A semiconductor light emitting device having a multiple pattern structure greatly increases light extraction efficiency. The semiconductor light emitting device includes a substrate and a semiconductor layer, an active layer, and an electrode layer formed on the substrate, a first pattern defining a first corrugated structure between the substrate and the semiconductor layer, and a second pattern defining a second corrugated structure on the first corrugated structure of the first pattern.

摘要翻译： 具有多重图案结构的半导体发光器件大大提高了光提取效率。 半导体发光器件包括衬底和半导体层，有源层和形成在衬底上的电极层，在衬底和半导体层之间限定第一波纹状结构的第一图案和限定第二波纹状的第二图案 结构上第一个波纹结构的第一个图案。