公开(公告)号：US08049220B2

公开(公告)日：2011-11-01

申请号：US11942460

申请日：2007-11-19

申请人： Ji-Yong Park ,  Ul-Ho Lee ,  Jae-Bon Koo ,  Ki-Yong Lee ,  Hye-Hyang Park

发明人： Ji-Yong Park ,  Ul-Ho Lee ,  Jae-Bon Koo ,  Ki-Yong Lee ,  Hye-Hyang Park

IPC分类号： H01L27/14

CPC分类号： H01L29/78696 ,  G02F1/13454 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The present invention relates to a flat panel display device comprising a polycrystalline silicon thin film transistor and provides a flat panel display device having improved characteristics by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a driving circuit portion and active channel regions of pixel portion. This may be achieved by having a different number of grain boundaries included in the polycrystalline silicon thin film formed in active channel regions of a switching thin film transistor and a driving thin film transistor formed in the pixel portion, and by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a thin film transistor for driving the pixel portion for each red, green and blue of the pixel portion. Further, this may be achieved by having a different number of grain boundaries included in polycrystalline silicon formed in active channel regions of an NMOS thin film transistor and a PMOS thin film transistor for forming CMOS transistor used in flat panel display device, thereby constructing a thin film transistor to obtain the improved characteristics for each transistor.

摘要翻译： 本发明涉及一种包括多晶硅薄膜晶体管的平板显示装置，通过在驱动电路的有源沟道区域中形成的多晶硅薄膜中包含不同数量的晶界，提供具有改进特性的平板显示装置 像素部分和有源沟道区域。 这可以通过在形成在像素部分中的开关薄膜晶体管和驱动薄膜晶体管的有源沟道区域中形成的多晶硅薄膜中包含不同数量的晶界，并且通过具有不同数量的晶粒来实现 包括在形成在用于驱动像素部分的每个红，绿和蓝的像素部分的薄膜晶体管的有源沟道区域中的多晶硅薄膜中的边界。 此外，这可以通过在NMOS薄膜晶体管的有源沟道区域中形成的多晶硅中包含不同数量的晶界和用于形成用于平板显示器件的CMOS晶体管的PMOS薄膜晶体管来实现，从而构造薄的 以获得每个晶体管的改进特性。

公开(公告)号：US07385223B2

公开(公告)日：2008-06-10

申请号：US10754543

申请日：2004-01-12

申请人： Jae-Bon Koo ,  Ji-Yong Park ,  Hye-Hyang Park ,  Ki-Yong Lee ,  Ul-Ho Lee

发明人： Jae-Bon Koo ,  Ji-Yong Park ,  Hye-Hyang Park ,  Ki-Yong Lee ,  Ul-Ho Lee

IPC分类号： H01L31/036

CPC分类号： H01L21/02675 ,  G02F1/1368 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3297 ,  H01L29/04 ,  H01L29/0684 ,  H01L29/78696

摘要： A flat panel display is provided. The flat panel display includes a light emitting device and two or more thin film transistors (TFTs) having semiconductor active layers having channel regions, where the thickness of the channel regions of the TFTs are different from each other. Thus, higher switching properties of a switching TFT can be maintained, a more uniform brightness of a driving TFT can be satisfied, and a white balance can be satisfied without changing a size of the TFT active layer.

摘要翻译： 提供平板显示器。 平板显示器包括发光器件和具有沟道区的半导体有源层的两个或多个薄膜晶体管（TFT），其中TFT的沟道区的厚度彼此不同。 因此，可以保持开关TFT的更高的开关特性，可以满足驱动TFT的更均匀的亮度，并且可以在不改变TFT有源层的尺寸的情况下实现白平衡。

公开(公告)号：US07297980B2

公开(公告)日：2007-11-20

申请号：US10779781

申请日：2004-02-18

申请人： Ji-Yong Park ,  Ul-Ho Lee ,  Jae-Bon Koo ,  Ki-Yong Lee ,  Hye-Hyang Park

发明人： Ji-Yong Park ,  Ul-Ho Lee ,  Jae-Bon Koo ,  Ki-Yong Lee ,  Hye-Hyang Park

IPC分类号： H01L29/04 ,  H01L29/786

CPC分类号： H01L29/78696 ,  G02F1/13454 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The present invention relates to a flat panel display device comprising a polycrystalline silicon thin film transistor and provides a flat panel display device having improved characteristics by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a driving circuit portion and active channel regions of pixel portion. This may be achieved by having a different number of grain boundaries included in the polycrystalline silicon thin film formed in active channel regions of a switching thin film transistor and a driving thin film transistor formed in the pixel portion, and by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a thin film transistor for driving the pixel portion for each red, green and blue of the pixel portion. Further, this may be achieved by having a different number of grain boundaries included in polycrystalline silicon formed in active channel regions of an NMOS thin film transistor and a PMOS thin film transistor for forming CMOS transistor used in flat panel display device, thereby constructing a thin film transistor to obtain the improved characteristics for each transistor.

摘要翻译： 本发明涉及一种包括多晶硅薄膜晶体管的平板显示装置，通过在驱动电路的有源沟道区域中形成的多晶硅薄膜中包含不同数量的晶界，提供具有改进特性的平板显示装置 像素部分和有源沟道区域。 这可以通过在形成在像素部分中的开关薄膜晶体管和驱动薄膜晶体管的有源沟道区域中形成的多晶硅薄膜中包含不同数量的晶界，并且通过具有不同数量的晶粒来实现 包括在形成在用于驱动像素部分的每个红，绿和蓝的像素部分的薄膜晶体管的有源沟道区域中的多晶硅薄膜中的边界。 此外，这可以通过在NMOS薄膜晶体管的有源沟道区域中形成的多晶硅中包含不同数量的晶界和用于形成用于平板显示器件的CMOS晶体管的PMOS薄膜晶体管来实现，从而构造薄的 以获得每个晶体管的改进特性。

公开(公告)号：US20050012152A1

公开(公告)日：2005-01-20

申请号：US10872495

申请日：2004-06-22

申请人： Ji-Yong Park ,  Jae-Bon Koo ,  Hye-Hyang Park ,  Ki-Yong Lee ,  Ul-Ho Lee

发明人： Ji-Yong Park ,  Jae-Bon Koo ,  Hye-Hyang Park ,  Ki-Yong Lee ,  Ul-Ho Lee

IPC分类号： H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/00 ,  H01L31/0392 ,  H01L27/01

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78675

摘要： The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.

摘要翻译： 本发明涉及一种包括多晶硅薄膜晶体管的平板显示装置及其制造方法。 在驱动电路部分的薄膜晶体管和平板显示装置的像素部分的有源沟道区域中形成的多晶硅晶粒的晶粒尺寸彼此不同。 此外，平板显示装置包括彼此具有不同粒子形状的P型和N型薄膜晶体管。

公开(公告)号：US08441049B2

公开(公告)日：2013-05-14

申请号：US10872495

申请日：2004-06-22

申请人： Ji-Yong Park ,  Jae-Bon Koo ,  Hye-Hyang Park ,  Ki-Yong Lee ,  Ul-Ho Lee

发明人： Ji-Yong Park ,  Jae-Bon Koo ,  Hye-Hyang Park ,  Ki-Yong Lee ,  Ul-Ho Lee

IPC分类号： H01L29/76

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78675

摘要： The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.

公开(公告)号：US06894313B2

公开(公告)日：2005-05-17

申请号：US10756393

申请日：2004-01-14

申请人： Ji-Yong Park ,  Jae-Bon Koo ,  Hye-Hyang Park

发明人： Ji-Yong Park ,  Jae-Bon Koo ,  Hye-Hyang Park

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L29/15

CPC分类号： H01L29/78696 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78675

摘要： A CMOS thin film transistor and a display device using the same the CMOS thin film transistor has improved electrical characteristics, such as, current mobility and threshold voltage. The CMOS thin film transistor is fabricated such that the direction of active channels of the P-type thin film transistor and the direction of active channels of the N-type thin film transistor are different from each other. Primary grain boundaries included in the P-type thin film transistor are angled such that they are at an angle of about 60 to about 120° with respect to an active channel direction. Primary grain boundaries included in the N-type thin film transistor are angled such that they are at an angle of about −30° to about 30°. The active channels are formed in polycrystalline silicon.

摘要翻译： CMOS薄膜晶体管和使用其的CMOS薄膜晶体管的显示装置具有改善的电特性，例如电流迁移率和阈值电压。 制造CMOS薄膜晶体管，使得P型薄膜晶体管的有源沟道的方向和N型薄膜晶体管的有源沟道的方向彼此不同。 包括在P型薄膜晶体管中的初级晶界是成角度的，使得它们相对于有源沟道方向成大约60°至大约120°的角度。 包括在N型薄膜晶体管中的一次晶界是成角度的，使得它们处于约-30°至约30°的角度。 有源沟道形成于多晶硅中。

公开(公告)号：US20050081780A1

公开(公告)日：2005-04-21

申请号：US10952718

申请日：2004-09-30

申请人： Ji-Yong Park ,  Hye-Hyang Park

发明人： Ji-Yong Park ,  Hye-Hyang Park

IPC分类号： G02F1/1368 ,  B23K26/00 ,  B23K26/06 ,  C01B33/02 ,  C30B13/00 ,  C30B13/24 ,  C30B29/06 ,  G02F1/136 ,  G09G3/36 ,  H01L21/00 ,  H01L21/20 ,  H01L21/268 ,  H01L51/50 ,  H05B33/14

CPC分类号： H01L21/0268 ,  B23K26/066 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026

摘要： The present invention relates to a fabrication method for polycrystalline silicon thin film in which amorphous silicon is crystallized by laser using a mask having a mixed structure of laser transmission pattern group and laser non-transmission pattern group, wherein the mask comprises two or more of dot pattern groups in which the non-transmission pattern group is perpendicular to a scan directional axis, and the dot pattern groups are formed in a certain shape and comprise first non-transmission patterns that are not respectively arranged in a row in an axis direction perpendicular to the scan directional axis, and second non-transmission patterns that are formed in the same arrangement as the first non-transmission patterns, but are positioned in such a manner that the second non-transmission patterns are parallel to the first non-transmission patterns and vertical axis of the scan directional axis.

摘要翻译： 本发明涉及一种多晶硅薄膜的制造方法，其中使用具有激光透射图案组和激光非透射图案组的混合结构的掩模通过激光使非晶硅结晶，其中该掩模包括两个或多个点 其中非透射图案组垂直于扫描方向轴的图案组，并且点图案组形成为一定形状，并且包括不垂直于轴线方向的轴线方向上不分别布置成行的第一非透射图案 扫描方向轴和第二非透射图案，其以与第一非透射图案相同的布置形成，但是以使得第二非透射图案平行于第一非透射图案的方式定位，以及 扫描方向轴的垂直轴。

公开(公告)号：US07326295B2

公开(公告)日：2008-02-05

申请号：US10952718

申请日：2004-09-30

申请人： Ji-Yong Park ,  Hye-Hyang Park

发明人： Ji-Yong Park ,  Hye-Hyang Park

IPC分类号： C30B25/12

CPC分类号： H01L21/0268 ,  B23K26/066 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026

摘要： The present invention relates to a fabrication method for polycrystalline silicon thin film in which amorphous silicon is crystallized by laser using a mask having a mixed structure of laser transmission pattern group and laser non-transmission pattern group, wherein the mask comprises two or more of dot pattern groups in which the non-transmission pattern group is perpendicular to a scan directional axis, and the dot pattern groups are formed in a certain shape and comprise first non-transmission patterns that are not respectively arranged in a row in an axis direction perpendicular to the scan directional axis, and second non-transmission patterns that are formed in the same arrangement as the first non-transmission patterns, but are positioned in such a manner that the second non-transmission patterns are parallel to the first non-transmission patterns and vertical axis of the scan directional axis.

摘要翻译： 本发明涉及一种多晶硅薄膜的制造方法，其中使用具有激光透射图案组和激光非透射图案组的混合结构的掩模通过激光使非晶硅结晶，其中该掩模包括两个或多个点 其中非透射图案组垂直于扫描方向轴的图案组，并且点图案组形成为一定形状，并且包括不垂直于轴线方向的轴线方向上不分别布置成行的第一非透射图案 扫描方向轴和第二非透射图案，其以与第一非透射图案相同的布置形成，但是以使得第二非透射图案平行于第一非透射图案的方式定位，以及 扫描方向轴的垂直轴。

公开(公告)号：US20050079736A1

公开(公告)日：2005-04-14

申请号：US10961266

申请日：2004-10-12

申请人： Ji-Yong Park ,  Hye-Hyang Park

发明人： Ji-Yong Park ,  Hye-Hyang Park

IPC分类号： G02F1/136 ,  C30B13/22 ,  C30B29/06 ,  C30B29/60 ,  H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00 ,  H01L21/477 ,  C30B1/00

CPC分类号： H01L21/02678 ,  C30B13/22 ,  C30B29/06 ,  C30B29/605 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/78672

摘要： The present invention relates to a fabrication method for polycrystalline silicon thin that is capable of providing uniform crystallization of polycrystalline silicon thin film by laser using a mask having a mixed structure of laser transmission regions and laser non-transmission regions, wherein the laser transmission regions exist asymmetrically on the basis of a laser scanning directional axis, and the laser transmission regions exist symmetrically on the basis of a certain central axis, and the laser transmission regions are shifted to a certain distance on the basis of another axis parallel to the certain central axis, so that the laser transmission regions and non laser transmission regions are alternately positioned.

摘要翻译： 本发明涉及一种多晶硅薄膜的制造方法，其能够通过使用具有激光透射区域和激光非透射区域的混合结构的掩模的激光来提供多晶硅薄膜的均匀结晶，其中存在激光透射区域 基于激光扫描方向轴不对称，并且激光透射区域基于某个中心轴对称地存在，并且激光透射区域基于平行于某个中心轴线的另一个轴线移动到一定距离 使得激光透射区域和非激光透射区域交替地定位。

公开(公告)号：US08486812B2

公开(公告)日：2013-07-16

申请号：US10961266

申请日：2004-10-12

申请人： Ji-Yong Park ,  Hye-Hyang Park

发明人： Ji-Yong Park ,  Hye-Hyang Park

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02678 ,  C30B13/22 ,  C30B29/06 ,  C30B29/605 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/78672

摘要： The present invention relates to a fabrication method for polycrystalline silicon thin that is capable of providing uniform crystallization of polycrystalline silicon thin film by laser using a mask having a mixed structure of laser transmission regions and laser non-transmission regions, wherein the laser transmission regions exist asymmetrically on the basis of a laser scanning directional axis, and the laser transmission regions exist symmetrically on the basis of a certain central axis, and the laser transmission regions are shifted to a certain distance on the basis of another axis parallel to the certain central axis, so that the laser transmission regions and non laser transmission regions are alternately positioned.

摘要翻译： 本发明涉及一种多晶硅薄膜的制造方法，其能够通过使用具有激光透射区域和激光非透射区域的混合结构的掩模的激光来提供多晶硅薄膜的均匀结晶，其中存在激光透射区域 基于激光扫描方向轴不对称，并且激光透射区域基于某个中心轴对称地存在，并且激光透射区域基于平行于某个中心轴线的另一个轴线移动到一定距离 使得激光透射区域和非激光透射区域交替地定位。