公开(公告)号：USD759757S1

公开(公告)日：2016-06-21

申请号：US29546234

申请日：2015-11-20

申请人： Jia Chen ,  Xiang Wu ,  Xianhui Xu

设计人： Jia Chen ,  Xiang Wu ,  Xianhui Xu

公开(公告)号：USD960095S1

公开(公告)日：2022-08-09

申请号：US29797055

申请日：2021-06-29

申请人： Jia Chen

设计人： Jia Chen

公开(公告)号：US08830469B2

公开(公告)日：2014-09-09

申请号：US13003464

申请日：2009-07-01

申请人： Jia Chen ,  Andreas Hangauer ,  Rainer Strzoda

发明人： Jia Chen ,  Andreas Hangauer ,  Rainer Strzoda

IPC分类号： G01N21/00 ,  G01N21/39 ,  G01N21/27 ,  G01N21/35

CPC分类号： G01N21/39 ,  G01N21/274 ,  G01N21/3504 ,  G01N2021/399 ,  G01N2201/127

摘要： A method and a sensor for detecting a target gas by laser spectroscopy using a laser or a laser diode having a monochrome emission wavelength that can be modulated by varying the operating temperature or the operating current. The wavelength range of the target gas comprises a first modulation of the laser or the laser diode over a first large modulation width, in addition to at least two absorption lines of a reference gas and at least one absorption line of the target gas. The absorption lines are used to calibrate the wavelength scale of the laser or the laser diode in relation to the varied operating temperature or operating current, a second modulation of the laser or the laser diode being performed over a second small modulation width, with the at least one absorption line of the target gas, for detecting the target gas.

摘要翻译： 一种通过激光光谱法使用具有可通过改变工作温度或工作电流进行调制的具有单色发射波长的激光或激光二极管来检测目标气体的方法和传感器。 目标气体的波长范围除了基准气体的至少两条吸收线和目标气体的至少一条吸收线之外，包括在第一大调制宽度上的激光或激光二极管的第一调制。 吸收线用于相对于变化的工作温度或工作电流来校准激光器或激光二极管的波长标度，激光器或激光二极管的第二调制在第二小调制宽度上执行，其中at 目标气体的至少一个吸收线，用于检测目标气体。

公开(公告)号：US20140112936A1

公开(公告)日：2014-04-24

申请号：US13884823

申请日：2011-11-09

申请人： Bing Chen ,  Gary H. Frey ,  Jia Chen

发明人： Bing Chen ,  Gary H. Frey ,  Jia Chen

IPC分类号： A61K39/21 ,  G01N33/569

摘要： Isolated, antigenic polypeptides including a pre-hairpin intermediate conformation of gp41 and vectors encoding such polypeptides are provided. Antibodies that bind to a pre-hairpin intermediate conformation of gp41 and methods of making antibodies a that bind to pre-hairpin intermediate conformation of gp41 are also provided. Vaccines against a pre-hairpin Fd intermediate conformation of gp41, as well as methods of treating subjects infected with HIV, preventing HIV infection, and inhibiting HIV-mediated activities are also provided. Methods of screening compounds that bind to an isolated, pre-hairpin intermediate conformation of gp41 are further provided.

摘要翻译： 提供分离的抗原多肽，包括gp41的前发夹中间体构象和编码这种多肽的载体。 还提供了结合gp41的前发夹中间构象的抗体和制备抗体a的方法，其结合gp41的前发夹中间构象。 还提供了针对gp41的预发夹Fd中间构象的疫苗，以及治疗感染HIV的受试者，预防HIV感染和抑制HIV介导的活性的方法。 还提供了筛选结合gp41的分离的前发夹中间构象的化合物的方法。

公开(公告)号：US08593123B2

公开(公告)日：2013-11-26

申请号：US12979167

申请日：2010-12-27

申请人： Jia Chen ,  Bin Shao

发明人： Jia Chen ,  Bin Shao

IPC分类号： G05F1/40

CPC分类号： H02M3/1563

摘要： Switching voltage regulator embodiments are provided with hysteretic control to thereby switch between pulse-width modulation and pulse-frequency modulation operational modes. The switching is in response to different levels of an error voltage Verr in the feedback loop of voltage regulators. The hysteretic control is configured to provide a dc hysteretic response to changes in the error voltage Verr and also an ac hysteretic response to these changes. These two responses can be independently set to thereby enhance operational speed of the voltage regulators and also enhance immunity to transient noise signals that are generated by the mode switching. The voltage regulator embodiments facilitate instant return from the pulse-frequency modulation operational mode to the pulse-width modulation operational mode so that the stability of the feedback control of the regulator is enhanced. This feature is especially useful when the feedback loop is configured to include current-mode control as it minimizes the time duration in which the feedback loop operates in a voltage-mode control. The instant return insures that the feedback loop is immediately returned to the greater stability of the current-mode control.

摘要翻译： 开关稳压器实施例具有迟滞控制，从而在脉冲宽度调制和脉冲 - 频率调制操作模式之间切换。 开关响应于电压调节器的反馈回路中的不同电平的误差电压Verr。 迟滞控制被配置为对误差电压Verr的变化提供直流迟滞响应，并且还对对这些变化的迟滞响应。 可以独立地设置这两个响应，从而提高电压调节器的操作速度，并且还增强对由模式切换产生的瞬态噪声信号的抗扰性。 电压调节器实施例便于从脉冲 - 频率调制操作模式到脉宽调制操作模式的即时返回，从而增强了调节器的反馈控制的稳定性。 当反馈回路配置为包括电流模式控制时，该功能特别有用，因为它使反馈回路在电压模式控制中工作的持续时间最小化。 即时返回确保反馈回路立即返回到电流模式控制的更大稳定性。

公开(公告)号：US20120249564A1

公开(公告)日：2012-10-04

申请号：US13515989

申请日：2009-12-16

申请人： Wanggen Liu ,  Jia Chen ,  Jun Ye

发明人： Wanggen Liu ,  Jia Chen ,  Jun Ye

IPC分类号： G06T1/00 ,  G06T1/60

CPC分类号： G06T1/20 ,  G06F9/5016 ,  G06F9/5083 ,  G06F2209/504 ,  Y02D10/22

摘要： A method, device, and system are disclosed. In one embodiment the method includes determining a current computing-memory ratio. Then the method compares the current computing-memory ratio to a lower ratio threshold value. Then the method configures a next draw command to be performed using a graphics memory efficiency operational mode when the current computing-memory ratio is below the lower ratio threshold value.

摘要翻译： 公开了一种方法，装置和系统。 在一个实施例中，该方法包括确定当前计算存储器比率。 然后，该方法将当前计算存储器比率与较低比率阈值进行比较。 然后，当当前计算存储器比率低于较低比值阈值时，该方法使用图形存储器效率操作模式配置要执行的下一个绘制命令。

公开(公告)号：US08115522B2

公开(公告)日：2012-02-14

申请号：US12765601

申请日：2010-04-22

申请人： Jia Chen

发明人： Jia Chen

IPC分类号： H03B19/06 ,  H03K3/356

CPC分类号： H03B19/14

摘要： A prescaler circuit according to an exemplary aspect of the present invention includes a first flip-flop circuit that detects second output data and outputs the detected data as first output data, and a second flip-flop circuit that detects the first output data and outputs the data as the second output data. The first flip-flop circuit includes a master-side latch circuit that generates intermediate data, a slave-side latch circuit that detects the intermediate data and outputs the data as the first output data, and a control signal switching circuit that selects and outputs the first output data as a control signal in a mode where the frequency is divided by 3, and selects and outputs a predefined fixed signal as a control signal in a mode where the frequency is divided by 4. The master-side latch circuit generates the intermediate data based on the second output data and the control signal.

摘要翻译： 根据本发明的示例性方面的预分频器电路包括：第一触发器电路，其检测第二输出数据并将检测到的数据作为第一输出数据输出;以及第二触发器电路，其检测第一输出数据并输出 数据作为第二输出数据。 第一触发器电路包括产生中间数据的主侧锁存电路，检测中间数据并输出数据作为第一输出数据的从侧锁存电路，以及控制信号切换电路，其选择并输出 第一输出数据作为频率被除以3的模式的控制信号，并且以频率被除以4的模式选择并输出预定义的固定信号作为控制信号。主侧锁存电路产生中间 基于第二输出数据和控制信号的数据。

公开(公告)号：US20120031167A1

公开(公告)日：2012-02-09

申请号：US13003443

申请日：2009-07-03

申请人： Jia Chen ,  Andreas Hangauer ,  Hans Link ,  Rainer Strzoda

发明人： Jia Chen ,  Andreas Hangauer ,  Hans Link ,  Rainer Strzoda

IPC分类号： G01N7/00

CPC分类号： F23N5/003 ,  F23M2900/11041 ,  F23N2031/18 ,  G01J3/4338 ,  G01N21/3504 ,  G01N21/39

摘要： A method for controlling or monitoring firing systems and for monitoring buildings having gas burners using spectroscopy, provides at least one wavelength-tunable monochromatic light source. An absorption spectrum of a measuring gas is received with at least one photodetector in an absorption path with spectral tuning of the light source, and the concentration of target gases carbon monoxide (CO) and methane (CH4) can be determined simultaneously during tuning of the light source. A device for carrying out the method includes a monochromatic laser diode, in particular a VCSEL, an absorption path in the exhaust gas region or a space endangered by leakage, a photodetector for receiving light passed through the absorption path, and an evaluation unit for determining the concentration of target gases based on the absorption spectrum covered during the laser or laser diode tuning. The method and device are applied in laser-optical gas sensors in gas firing systems.

摘要翻译： 一种用于控制或监视点火系统和用于使用光谱法监测具有气体燃烧器的建筑物的方法，提供至少一个波长可调谐单色光源。 测量气体的吸收光谱通过具有光源的光谱调谐的吸收路径中的至少一个光电检测器接收，并且可以在调谐期间同时确定目标气体一氧化碳（CO）和甲烷（CH4）的浓度 光源。 用于执行该方法的装置包括单色激光二极管，特别是VCSEL，废气区域中的吸收路径或由泄漏而濒危的空间，用于接收通过吸收路径的光的光电检测器，以及用于确定 基于在激光或激光二极管调谐期间覆盖的吸收光谱的目标气体浓度。 该方法和装置应用于气体燃烧系统中的激光 - 光学气体传感器。

公开(公告)号：US07582534B2

公开(公告)日：2009-09-01

申请号：US10991582

申请日：2004-11-18

申请人： Ali Afzali-Ardakani ,  Phaedon Avouris ,  Jia Chen ,  Christian Klinke ,  Christopher B. Murray ,  Dmitri V. Talapin

发明人： Ali Afzali-Ardakani ,  Phaedon Avouris ,  Jia Chen ,  Christian Klinke ,  Christopher B. Murray ,  Dmitri V. Talapin

IPC分类号： H01L21/336

CPC分类号： H01L21/22 ,  B82Y10/00 ,  H01L51/002 ,  H01L51/0048 ,  Y10S977/742 ,  Y10S977/938

摘要： A method is provided for doping nano-components, including nanotubes, nanocrystals and nanowires, by exposing the nano-components to an organic amine-containing dopant. A method is also provided for forming a field effect transistor comprising a nano-component that has been doped using such a dopant.

摘要翻译： 提供了一种通过将纳米组分暴露于含有机胺的掺杂剂来掺杂包括纳米管，纳米晶体和纳米线的纳米组分的方法。 还提供了一种用于形成包含已经使用这种掺杂剂掺杂的纳米成分的场效应晶体管的方法。

公开(公告)号：US20080200021A1

公开(公告)日：2008-08-21

申请号：US12104570

申请日：2008-04-17

申请人： Kevin K. Chan ,  Jia Chen ,  Shih-Fen Huang ,  Edward J. Nowak

发明人： Kevin K. Chan ,  Jia Chen ,  Shih-Fen Huang ,  Edward J. Nowak

IPC分类号： H01L21/3205

CPC分类号： H01L21/2807 ,  H01L21/28052 ,  H01L21/28061 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4916 ,  H01L29/4925 ,  H01L29/665

摘要： A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The small grain size of the silicon nano crystal layer allows for deposition of a uniform and continuous layer of poly-SiGe with a [Ge] of up to at least 70% using in situ rapid thermal chemical vapor deposition (RTCVD). An in-situ purge of the deposition chamber in a oxygen ambient at rapidly reduced temperatures results in a thin SiO2 or SixGeyOz interfacial layer of 3 to 4A thick. The thin SiO2 or SixGeyOz interfacial layer is sufficiently thin and discontinuous to offer little resistance to gate current flow yet has sufficient [O] to effectively block upward Ge diffusion during heat treatment to thereby allow silicidation of the subsequently deposited layer of cobalt. The gate electrode stack structure is used for both nFETs and pFETs.

摘要翻译： 在栅极电介质上的硅纳米晶种子层上形成场效应晶体管器件的多层栅电极堆叠结构。 硅纳米晶体层的小晶粒尺寸允许使用原位快速热化学气相沉积（RTCVD）沉积高达至少70％的[Ge]的均匀且连续的多晶硅层。 在快速降低的温度下在氧气环境中原位吹扫沉积室导致薄的SiO 2或Si x O x O O 3至4A厚的界面层。 薄的SiO 2或Si x Si 2 O 3界面层足够薄且不连续以提供很小的电阻 到栅极电流仍具有足够的[O]以在热处理期间有效地阻挡Ge扩散，从而允许后续沉积的钴的硅化物。 栅电极堆叠结构用于nFET和pFET两者。