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公开(公告)号：US07582534B2
公开(公告)日：2009-09-01
申请号：US10991582
申请日：2004-11-18
申请人： Ali Afzali-Ardakani , Phaedon Avouris , Jia Chen , Christian Klinke , Christopher B. Murray , Dmitri V. Talapin
发明人： Ali Afzali-Ardakani , Phaedon Avouris , Jia Chen , Christian Klinke , Christopher B. Murray , Dmitri V. Talapin
IPC分类号： H01L21/336
CPC分类号： H01L21/22 , B82Y10/00 , H01L51/002 , H01L51/0048 , Y10S977/742 , Y10S977/938
摘要： A method is provided for doping nano-components, including nanotubes, nanocrystals and nanowires, by exposing the nano-components to an organic amine-containing dopant. A method is also provided for forming a field effect transistor comprising a nano-component that has been doped using such a dopant.
摘要翻译： 提供了一种通过将纳米组分暴露于含有机胺的掺杂剂来掺杂包括纳米管，纳米晶体和纳米线的纳米组分的方法。 还提供了一种用于形成包含已经使用这种掺杂剂掺杂的纳米成分的场效应晶体管的方法。
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公开(公告)号：US20100038628A1
公开(公告)日：2010-02-18
申请号：US12551310
申请日：2009-08-31
申请人： Ali Afzali-Ardakani , Phaedon Avouris , Jia Chen , Christian Klinke , Christopher B. Murray , Dmitri V. Talapin
发明人： Ali Afzali-Ardakani , Phaedon Avouris , Jia Chen , Christian Klinke , Christopher B. Murray , Dmitri V. Talapin
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L21/22 , B82Y10/00 , H01L51/002 , H01L51/0048 , Y10S977/742 , Y10S977/938
摘要： A method is provided for doping nano-components, including nanotubes, nanocrystals and nanowires, by exposing the nano-components to an organic amine-containing dopant. A method is also provided for forming a field effect transistor comprising a nano-component that has been doped using such a dopant.
摘要翻译： 提供了一种通过将纳米组分暴露于含有机胺的掺杂剂来掺杂包括纳米管，纳米晶体和纳米线的纳米组分的方法。 还提供了一种用于形成包含已经使用这种掺杂剂掺杂的纳米成分的场效应晶体管的方法。
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公开(公告)号：US07982274B2
公开(公告)日：2011-07-19
申请号：US12130563
申请日：2008-05-30
申请人： Ali Afzali-Ardakani , Cherie R. Kagan , Christopher B. Murray , Robert L. Sandstrom , Dmitri V. Talapin
发明人： Ali Afzali-Ardakani , Cherie R. Kagan , Christopher B. Murray , Robert L. Sandstrom , Dmitri V. Talapin
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/04 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L29/0673 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0049 , H01L51/0545 , H01L2251/5369 , Y10S977/938
摘要： A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.
摘要翻译： 公开了一种包括掺杂半导体纳米元件的器件和形成器件的方法。 纳米组分是纳米管，纳米线或纳米晶体膜之一，其可以通过暴露于含有机胺的掺杂剂掺杂。 给出了具有包含铅硒化物纳米线或纳米晶体膜的通道的场效应晶体管的示例性实例以及形成这些器件的方法。
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4.发明申请公开(公告)号：US20080230849A1
公开(公告)日：2008-09-25
申请号：US12130563
申请日：2008-05-30
申请人： Ali Afzali-Ardakani , Cherie R. Kagan , Christopher B. Murray , Robert L. Sandstrom , Dmitri V. Talapin
发明人： Ali Afzali-Ardakani , Cherie R. Kagan , Christopher B. Murray , Robert L. Sandstrom , Dmitri V. Talapin
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L29/04 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L29/0673 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0049 , H01L51/0545 , H01L2251/5369 , Y10S977/938
摘要： A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.
摘要翻译： 公开了一种包括掺杂半导体纳米元件的器件和形成器件的方法。 纳米组分是纳米管，纳米线或纳米晶体膜之一，其可以通过暴露于含有机胺的掺杂剂掺杂。 给出了具有包含铅硒化物纳米线或纳米晶体膜的通道的场效应晶体管的示例性实例以及形成这些器件的方法。
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5.发明授权公开(公告)号：US07405129B2
公开(公告)日：2008-07-29
申请号：US11138797
申请日：2005-05-26
申请人： Ali Afzali-Ardakani , Cherie R. Kagan , Christopher B. Murray , Robert L. Sandstrom , Dmitri V. Talapin
发明人： Ali Afzali-Ardakani , Cherie R. Kagan , Christopher B. Murray , Robert L. Sandstrom , Dmitri V. Talapin
IPC分类号： H01L21/336
CPC分类号： H01L29/04 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L29/0673 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0049 , H01L51/0545 , H01L2251/5369 , Y10S977/938
摘要： A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.
摘要翻译： 公开了一种包括掺杂半导体纳米元件的器件和形成器件的方法。 纳米组分是纳米管，纳米线或纳米晶体膜之一，其可以通过暴露于含有机胺的掺杂剂掺杂。 给出了具有包含铅硒化物纳米线或纳米晶体膜的通道的场效应晶体管的示例性实例以及形成这些器件的方法。
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公开(公告)号：US07964481B2
公开(公告)日：2011-06-21
申请号：US12423516
申请日：2009-04-14
IPC分类号： H01L21/20
CPC分类号： H01L31/0324 , B82Y30/00 , H01L21/0237 , H01L21/02551 , H01L21/02568 , H01L21/02601 , H01L21/02628 , H01L31/03529 , H01L31/072 , Y02E10/50
摘要： An inorganic nanocomposite is prepared by obtaining a solution of a soluble hydrazine-based metal chalcogenide precursor; dispersing a nanoentity in the precursor solution; applying a solution of the precursor containing the nanoentity onto a substrate to produce a film of the precursor containing the nanoentity; and annealing the film of the precursor containing the nanoentity to produce the metal chalcogenide nanocomposite film comprising at least one metal chalcogenide and at least one molecularly-intermixed nanoentity on the substrate. The process can be used to prepare field-effect transistors and photovoltaic devices.
摘要翻译： 通过获得可溶性肼基金属硫族化物前体的溶液制备无机纳米复合材料; 将纳米颗粒分散在前体溶液中; 将含有纳米级的前体的溶液施加到基底上以产生含有纳米级的前体的膜; 以及退火含有纳米材料的前体的膜以产生包含至少一种金属硫属元素化合物和至少一种分子混合纳米颗粒的金属硫族化物纳米复合材料膜。 该过程可用于制备场效应晶体管和光伏器件。
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公开(公告)号：US07517718B2
公开(公告)日：2009-04-14
申请号：US11330291
申请日：2006-01-12
IPC分类号： H01L21/00
CPC分类号： H01L31/0324 , B82Y30/00 , H01L21/0237 , H01L21/02551 , H01L21/02568 , H01L21/02601 , H01L21/02628 , H01L31/03529 , H01L31/072 , Y02E10/50
摘要： An inorganic nanocomposite is prepared by obtaining a solution of a soluble hydrazine-based metal chalcogenide precursor; dispersing a nanoentity in the precursor solution; applying a solution of the precursor containing the nanoentity onto a substrate to produce a film of the precursor containing the nanoentity; and annealing the film of the precursor containing the nanoentity to produce the metal chalcogenide nanocomposite film comprising at least one metal chalcogenide and at least one molecularly-intermixed nanoentity on the substrate. The process can be used to prepare field-effect transistors and photovoltaic devices.
摘要翻译： 通过获得可溶性肼基金属硫族化物前体的溶液制备无机纳米复合材料; 将纳米颗粒分散在前体溶液中; 将含有纳米级的前体的溶液施加到基底上以产生含有纳米级的前体的膜; 以及退火含有纳米材料的前体的膜以产生包含至少一种金属硫属元素化合物和至少一种分子混合纳米颗粒的金属硫族化物纳米复合材料膜。 该过程可用于制备场效应晶体管和光伏器件。
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公开(公告)号：US20090236594A1
公开(公告)日：2009-09-24
申请号：US12423516
申请日：2009-04-14
IPC分类号： H01L29/12 , B05D3/02 , B05D3/12 , B05D5/00 , B05D3/06 , B32B9/00 , B05D5/12 , C21D1/26 , C01B19/04 , C01B17/00 , H01L21/06
CPC分类号： H01L31/0324 , B82Y30/00 , H01L21/0237 , H01L21/02551 , H01L21/02568 , H01L21/02601 , H01L21/02628 , H01L31/03529 , H01L31/072 , Y02E10/50
摘要： An inorganic nanocomposite is prepared by obtaining a solution of a soluble hydrazine-based metal chalcogenide precursor; dispersing a nanoentity in the precursor solution; applying a solution of the precursor containing the nanoentity onto a substrate to produce a film of the precursor containing the nanoentity; and annealing the film of the precursor containing the nanoentity to produce the metal chalcogenide nanocomposite film comprising at least one metal chalcogenide and at least one molecularly-intermixed nanoentity on the substrate. The process can be used to prepare field-effect transistors and photovoltaic devices.
摘要翻译： 通过获得可溶性肼基金属硫族化物前体的溶液制备无机纳米复合材料; 将纳米颗粒分散在前体溶液中; 将含有纳米级的前体的溶液施加到基底上以产生含有纳米级的前体的膜; 以及退火含有纳米材料的前体的膜以产生包含至少一种金属硫属元素化合物和至少一种分子混合纳米颗粒的金属硫族化物纳米复合材料膜。 该过程可用于制备场效应晶体管和光伏器件。
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公开(公告)号：US09882001B2
公开(公告)日：2018-01-30
申请号：US14117070
申请日：2012-05-16
申请人： Angshuman Nag , Dmitri V. Talapin
发明人： Angshuman Nag , Dmitri V. Talapin
CPC分类号： H01L29/0669 , B01J13/0034 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0665 , H01L29/12 , H01L29/78681 , H01L29/7869 , Y10S977/774 , Y10S977/892 , Y10S977/938
摘要： Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.
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公开(公告)号：US07607584B2
公开(公告)日：2009-10-27
申请号：US11411716
申请日：2006-04-26
IPC分类号： G06K19/06
CPC分类号： G07C9/00158 , A61B5/1172
摘要： An identification verification system includes a combination of indicia that represent measurable characteristics mapped into a characteristic signature, and an indicia detector for detecting the characteristic signature and verifying authenticity of the characteristic signature.
摘要翻译： 识别验证系统包括表示映射到特征签名中的可测量特征的标记的组合，以及用于检测特征签名并验证特征签名的真实性的标记检测器。
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