摘要:
There is provided a silicon-based ferroelectric memory material, which includes a mesoporous silica with the nanopores thereon, and high-density arrays of nanocrystalline silicon or germanium quantum dots formed on the inner wall of the nanopores of the mesoporous silica. The silicon-based ferroelectric memory material is substantially composed of silicon and oxygen element, and the process for fabricating such a material is simple and can be done at the low temperature (
摘要:
A display includes a backlight source, display panel, first light source, and controller. The display panel includes a sensor array for sensing first reflection light generated from an object reflecting first detection light. The first detection light is generated by the backlight source for locating a coordinate of a projection point of the object on the display panel. The first light source is disposed in a first side of the display panel, for repeatedly transmitting second detection light of different transmitting angles to the object at different time to generate a second reflection light. The second reflection light is sensed by the sensor array. The controller is for performing a corresponding operation according to a transmitting angle of the first light source and the coordinate of the projection point when brightness value of the reflective light is substantially greater than a predict value.
摘要:
A touch display device includes a first substrate, a second substrate, a plurality of sub-pixel regions, a plurality of display devices, a plurality of first optical touch sensor device and second optical touch sensor devices. The first substrate and the second substrate are disposed oppositely. The display devices are disposed in the sub-pixel regions, respectively, to provide images for a first display surface and a second display surface. The first optical touch sensor devices are disposed on the first substrate and at least corresponding to part of the sub-pixel regions for implementing touch input function on the first display surface. The second optical touch sensor devices are disposed on the first substrate and at least corresponding to part of the sub-pixel regions for implementing touch input function on the second display surface.
摘要:
An active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is disposed on the display area of the substrate. A gate insulator is disposed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are disposed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then disposed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is disposed on the passivation layer.
摘要:
A method for fabricating an active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is formed on the display area of the substrate. A gate insulator is formed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are formed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then formed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is formed on the passivation layer.
摘要:
A manufacturing method of a thin film transistor array substrate incorporating the manufacture of a photo-sensor is provided. In the manufacturing method, a photo-sensing dielectric layer is formed between a transparent conductive layer and a metal electrode for detecting ambient light. Since the transparent conductive layer is adopted as an electrode, the ambient light can pass through the transparent conductive layer and get incident light into the photo-sensing dielectric layer. Therefore, the sensing area of the photo-sensor can be enlarged and the photo-sensing efficiency is improved. In addition, the other side of the photo sensitive dielectric layer may be a metal electrode. The metal electrode can block the backlight from getting incident into the photo-sensing dielectric layer and thus reduce the background noise. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.
摘要:
The present invention relates to a method for forming a layered structure with silicon nanocrystals. In one embodiment, the method comprises the steps of: (i) forming a first conductive layer on a substrate, (ii) forming a silicon-rich dielectric layer on the first conductive layer, and (iii) laser-annealing at least the silicon-rich dielectric layer to induce silicon-rich aggregation to form a plurality of silicon nanocrystals in the silicon-rich dielectric layer. The silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, or a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with silicon nanocrystals in a silicon-rich dielectric layer is usable in a solar cell, a photodetector, a touch panel, a non-volatile memory device as storage node, and a liquid crystal display.
摘要:
A structure of X-ray detector includes a Si-rich dielectric material for serving as a photo-sensing layer to increase light sensitivity. The fabrication method of the X-ray detector including the Si-rich dielectric material needs less photolithography-etching processes, so as to reduce the total thickness of thin film layers and decrease process steps and cost.
摘要:
A display with a photo sensor is provided, wherein the photo sensor is integrated with an active device array substrate of the display and fabricated through an existing process to reduce the manufacturing cost. A photosensitive silicon-rich dielectric layer or any other photosensitive material layer having similar photosensitive characteristics (for example, a photosensitive semiconductor layer) is adopted to form the photo sensor with a lower electrode and a transparent upper electrode. Thereby, the fill factor of the photo sensor is maximized and noises caused by a backlight source electrode are eliminated.
摘要:
A method for locating a touch position is provided. The method is adaptable to an optical touch panel, wherein the optical touch panel has a plurality of visible light sensors and a plurality of corresponding invisible light sensors that are arranged as an array. In the present method, sensing signals of the visible light sensors and the invisible light sensors are read. The sensing signal of each visible light sensor is converted into a first binary code according to a first setting parameter, and the sensing signal of each invisible light sensor is converted into a second binary code according to a second setting parameter and a third setting parameter. An AND operation is performed on all the first binary codes and all the second binary codes to obtain a plurality of logic operation values, so as to locate a position touched by a user on the optical touch panel.