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107 条记录 (耗时 0.047 秒)

    Line end spacing measurement
    1.
    发明授权
    Line end spacing measurement 有权
    线端距测量

    公开(公告)号：US07393616B2

    公开(公告)日：2008-07-01

    申请号：US11397464

    申请日：2006-04-04

    申请人： Jiann Yuan Huang ,  Anderson Chang ,  Chih-Ming Ke ,  Heng-Jen Lee ,  Chin-Hsiang Lin ,  Tsai-Sheng Gau

    发明人： Jiann Yuan Huang ,  Anderson Chang ,  Chih-Ming Ke ,  Heng-Jen Lee ,  Chin-Hsiang Lin ,  Tsai-Sheng Gau

    IPC分类号： G03F1/00 ,  G03F9/00

    CPC分类号： G03F7/70616

    摘要： A method including: providing collinear first and second lines in a mask layer over a substrate, the first line having at one end a first line end and having a first line body adjacent the first line end, and the second line having at one end a second line end and having a second line body adjacent the second line end; measuring line widths of the first line body and the second line body; locating effective line end positions for the first line end based on the line width of the first line body and for the second line end based on the line width of the second line body; and measuring a distance between the effective line end positions, as an effective line end spacing.

    摘要翻译： 一种方法，包括：在衬底上的掩模层中提供共线的第一和第二线，所述第一线在一端具有第一线端并且具有与所述第一线端相邻的第一线体，并且所述第二线在一端具有 第二线端并且具有与第二线端相邻的第二线体; 测量第一线体和第二线体的线宽; 基于第一线体的线宽度和第二线端基于第二线体的线宽来定位第一线端的有效线端位置; 并测量有效线端位置之间的距离，作为有效线端间距。

    Line end spacing measurement
    2.
    发明申请
    Line end spacing measurement 有权
    线端距测量

    公开(公告)号：US20070228003A1

    公开(公告)日：2007-10-04

    申请号：US11397464

    申请日：2006-04-04

    申请人： Jiann Huang ,  Anderson Chang ,  Chih-Ming Ke ,  H. J. Lee ,  Chin-Hsiang Lin ,  Tsai-Sheng Gau

    发明人： Jiann Huang ,  Anderson Chang ,  Chih-Ming Ke ,  H. J. Lee ,  Chin-Hsiang Lin ,  Tsai-Sheng Gau

    IPC分类号： C23F1/00 ,  G01L21/30

    CPC分类号： G03F7/70616

    摘要： A method including: providing collinear first and second lines in a mask layer over a substrate, the first line having at one end a first line end and having a first line body adjacent the first line end, and the second line having at one end a second line end and having a second line body adjacent the second line end; measuring line widths of the first line body and the second line body; locating effective line end positions for the first line end based on the line width of the first line body and for the second line end based on the line width of the second line body; and measuring a distance between the effective line end positions, as an effective line end spacing.

    摘要翻译： 一种方法，包括：在衬底上的掩模层中提供共线的第一和第二线，所述第一线在一端具有第一线端并且具有与所述第一线端相邻的第一线体，并且所述第二线在一端具有 第二线端并且具有与第二线端相邻的第二线体; 测量第一线体和第二线体的线宽; 基于第一线体的线宽度和第二线端基于第二线体的线宽来定位用于第一线端的有效线端位置; 并测量有效线端位置之间的距离，作为有效线端间距。

    Measurement of overlay offset in semiconductor processing
    5.
    发明授权
    Measurement of overlay offset in semiconductor processing 有权
    测量半导体加工中的覆盖偏移

    公开(公告)号：US08179536B2

    公开(公告)日：2012-05-15

    申请号：US12957802

    申请日：2010-12-01

    申请人： Te-Chih Huang ,  Chih-Ming Ke ,  Tsai-Sheng Gau

    发明人： Te-Chih Huang ,  Chih-Ming Ke ,  Tsai-Sheng Gau

    IPC分类号： G01B11/14

    CPC分类号： H01L22/12 ,  G03F7/70633

    摘要： A system for overlay offset measurement in semiconductor manufacturing including a radiation source, a detector, and a calculation unit. The radiation source is operable to irradiate an overlay offset measurement target. The detector is operable to detect a first reflectivity and a second reflectivity of the irradiated overlay offset measurement target. The calculation unit is operable to determine an overlay offset using the detected first and second reflectivity by determining a predetermined overlay offset amount which provides an actual offset of zero.

    摘要翻译： 一种用于包括辐射源，检测器和计算单元的半导体制造中的覆盖偏移测量的系统。 辐射源可操作以照射覆盖偏移测量目标。 检测器可操作以检测被照射的覆盖偏移测量目标的第一反射率和第二反射率。 计算单元可操作以通过确定提供零的实际偏移量的预定覆盖偏移量来确定使用检测到的第一和第二反射率的覆盖偏移。

    Scatterometric method of monitoring hot plate temperature and facilitating critical dimension control
    6.
    发明授权
    Scatterometric method of monitoring hot plate temperature and facilitating critical dimension control 有权
    监测热板温度的散射方法，促进关键尺寸控制

    公开(公告)号：US07135259B2

    公开(公告)日：2006-11-14

    申请号：US10447010

    申请日：2003-05-28

    申请人： Li-Jui Chen ,  Chih-Ming Ke ,  Bang-Ching Ho ,  Jen-Chieh Shih ,  Tsai-Sheng Gau

    发明人： Li-Jui Chen ,  Chih-Ming Ke ,  Bang-Ching Ho ,  Jen-Chieh Shih ,  Tsai-Sheng Gau

    IPC分类号： H01L21/66

    CPC分类号： G01K11/12 ,  G01K11/00 ,  G01K11/125 ,  G03F7/38

    摘要： A method of determining temperatures at localized regions of a substrate during processing of the substrate in a photolithography process includes the following steps: independently illuminating a photoresist layer including a photoresist pattern at a plurality of locations on the substrate with a light source, so that light is diffracted off the plurality of locations of the photoresist pattern; measuring the diffracted light from the plurality of locations to determine measured diffracted values associated with respective locations from the plurality of locations; and comparing the measured diffracted values against a library to determine a pre-illumination process temperature of the photoresist layer at the plurality of locations.

    摘要翻译： 在光刻工艺中在衬底处理期间确定衬底的局部区域处的温度的方法包括以下步骤：用光源在衬底上的多个位置处独立地照射包括光致抗蚀剂图案的光致抗蚀剂图案，使得光 从光致抗蚀剂图案的多个位置衍射; 测量来自多个位置的衍射光，以确定与来自多个位置的相应位置相关联的测量的衍射值; 以及将测量的衍射值与文库进行比较，以确定多个位置处的光致抗蚀剂层的预照射过程温度。

    System For Improving Critical Dimension Uniformity
    9.
    发明申请
    System For Improving Critical Dimension Uniformity 有权
    改善关键尺寸均匀性的系统

    公开(公告)号：US20100201961A1

    公开(公告)日：2010-08-12

    申请号：US12766102

    申请日：2010-04-23

    申请人： Shinn-Sheng Yu ,  Chih-Ming Ke ,  Jacky Huang ,  Chun-Kuang Chen ,  Tsai-Sheng Gau

    发明人： Shinn-Sheng Yu ,  Chih-Ming Ke ,  Jacky Huang ,  Chun-Kuang Chen ,  Tsai-Sheng Gau

    IPC分类号： G03B27/42 ,  G01B11/14 ,  G01B11/26

    CPC分类号： G03F7/70625

    摘要： A system for improving substrate critical dimension uniformity is described. The system includes an exposing means for exposing a plurality of mask patterns on a first plurality of substrates at predetermined locations with common splits of focus ({Fj}) and exposure dose ({Ek}) for each of the first plurality of substrates to form a plurality of perturbed wafers. A measuring means is provided for measuring a critical dimension of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers. An averaging means is provided for averaging the critical dimension measured at each of the predetermined locations over the plurality of perturbed wafers to form a perturbed critical dimension map. A second measuring means is provided for measuring a sidewall angle of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers. A second averaging means is provided for averaging the sidewall angle measured at each of the predetermined locations over the plurality of perturbed wafers to form a perturbed sidewall angle map. The perturbed critical dimension map and the perturbed sidewall angle map can then be provided to an exposure tool.

    摘要翻译： 描述了一种用于改善衬底临界尺寸均匀性的系统。 该系统包括曝光装置，用于在预定位置上暴露多个掩模图案的多个掩模图案，该预定位置具有用于第一多个基板中的每一个的共同的聚焦点（{Fj}）和曝光剂量（{Ek}），以形成 多个扰动的晶片。 提供了一种测量装置，用于测量多个扰动晶片中的每一个的每个预定位置处的多个掩模图案的临界尺寸。 提供了平均装置，用于对在多个扰动晶片上的每个预定位置处测量的临界尺寸进行平均，以形成扰动的临界尺度图。 提供了第二测量装置，用于测量多个扰动晶片中的每一个的每个预定位置处的多个掩模图案的侧壁角度。 提供了第二平均装置，用于对在多个扰动的晶片上的每个预定位置处测量的侧壁角度进行平均，以形成扰动的侧壁角度图。 然后可以将扰动的临界尺寸图和扰动的侧壁角度图提供给曝光工具。

    Method and system for improving critical dimension uniformity
    10.
    发明授权
    Method and system for improving critical dimension uniformity 失效
    改善临界尺寸均匀性的方法和系统

    公开(公告)号：US07732109B2

    公开(公告)日：2010-06-08

    申请号：US11696602

    申请日：2007-04-04

    申请人： Shinn-Sheng Yu ,  Chih-Ming Ke ,  Jacky Huang ,  Chun-Kuang Chen ,  Tsai-Sheng Gau

    发明人： Shinn-Sheng Yu ,  Chih-Ming Ke ,  Jacky Huang ,  Chun-Kuang Chen ,  Tsai-Sheng Gau

    IPC分类号： G03F9/00 ,  G03B27/54 ,  G03B27/52

    CPC分类号： G03F7/70625

    摘要： A method for improving critical dimension uniformity of a wafer includes exposing a plurality of mask patterns on a first plurality of substrates at predetermined locations with common splits conditions of focus and exposure dose for each of the first plurality of substrates to form a plurality of perturbed wafers; measuring a critical dimension of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers; averaging the critical dimension measured at each of the predetermined locations over the plurality of perturbed wafers to form a perturbed critical dimension map; measuring a sidewall angle of the plurality of mask patterns; averaging the sidewall angle measured to form a perturbed sidewall angle map; and providing the perturbed critical dimension map and the perturbed sidewall angle map to an exposure tool.

    摘要翻译： 一种用于改善晶片的临界尺寸均匀性的方法包括在预定位置处将多个掩模图案暴露在第一多个基板上，其中共同的聚焦条件和曝光剂量对于第一多个基板中的每一个基板形成多个扰动的晶片 ; 测量所述多个扰动晶片中的每一个的每个所述预定位置处的所述多个掩模图案的临界尺寸; 平均在多个扰动的晶片上的每个预定位置处测量的临界尺寸，以形成扰动的临界尺寸图; 测量所述多个掩模图案的侧壁角度; 平均测量的侧壁角度以形成扰动的侧壁角度图; 并将扰动的临界尺寸图和扰动的侧壁角度图提供给曝光工具。