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    Variable resistance memory devices and methods of manufacturing the same
    1.
    发明授权
    Variable resistance memory devices and methods of manufacturing the same 有权

    公开(公告)号：US09812501B2

    公开(公告)日：2017-11-07

    申请号：US14984477

    申请日：2015-12-30

    申请人： Jin-Woo Lee ,  Youn-Seon Kang ,  Seung-Jae Jung ,  Hyun-Su Ju ,  Masayuki Terai

    发明人： Jin-Woo Lee ,  Youn-Seon Kang ,  Seung-Jae Jung ,  Hyun-Su Ju ,  Masayuki Terai

    IPC分类号： H01L27/24 ,  H01L43/08 ,  H01L43/02 ,  H01L43/12 ,  H01L45/00 ,  H01L27/22

    CPC分类号： H01L27/2463 ,  H01L27/224 ,  H01L27/2409 ,  H01L43/12 ,  H01L45/1675

    摘要： A variable resistance memory device includes a plurality of first conductive layer pattern, a plurality of second conductive layer patterns over the first conductive layer patterns, and a plurality of lower cell structures including a switching element and a variable resistance element, the lower cell structures being formed at intersections at which the first conductive layer patterns and the second conductive layer patterns overlap each other. The first conductive layer patterns, the second conductive layer patterns and the lower cell structures serves as one of a memory cell, a first dummy pattern structure and a second dummy pattern structure. The first dummy pattern structure is formed on both edge portions in the first direction, and the second conductive layer pattern of the first dummy pattern structure protrudes in the first direction from a sidewall of the lower cell structure thereunder, and the second dummy pattern structure is formed on both edge portions in the second direction, and the first conductive layer pattern of the second dummy pattern structure protrudes in the second direction from a sidewall of the lower cell structure thereon. Failures of the variable resistance memory device due to the etch residue may decrease.

    NONVOLATILE MEMORY DEVICES, NONVOLATILE MEMORY CELLS AND METHODS OF MANUFACTURING NONVOLATILE MEMORY DEVICES
    2.
    发明申请
    NONVOLATILE MEMORY DEVICES, NONVOLATILE MEMORY CELLS AND METHODS OF MANUFACTURING NONVOLATILE MEMORY DEVICES 有权
    非易失性存储器件，非易失性存储器单元和制造非易失性存储器件的方法

    公开(公告)号：US20120313066A1

    公开(公告)日：2012-12-13

    申请号：US13442595

    申请日：2012-04-09

    申请人： Chan-Jin Park ,  Sun-Jung Kim ,  Soon-Oh Park ,  Hyun-Su Ju ,  Soo-Doo Chae

    发明人： Chan-Jin Park ,  Sun-Jung Kim ,  Soon-Oh Park ,  Hyun-Su Ju ,  Soo-Doo Chae

    IPC分类号： H01L47/00 ,  H01L21/02

    CPC分类号： H01L45/1253 ,  H01L27/2472 ,  H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146

    摘要： A nonvolatile memory cell includes first and second interlayer insulating films which are separated from each other and are stacked sequentially, a first electrode which penetrates the first interlayer insulating film and the second interlayer insulating film, a resistance change film which is formed along a side surface of the first electrode and extends parallel to the first electrode, and a second electrode which is formed between the first interlayer insulating film and the second interlayer insulating film. The second electrode includes a conductive film which is made of metal and a diffusion preventing film which prevents diffusion of a conductive material contained in the conductive film.

    摘要翻译： 非易失性存储单元包括彼此分离并依次堆叠的第一和第二层间绝缘膜，穿过第一层间绝缘膜和第二层间绝缘膜的第一电极，沿着侧表面形成的电阻变化膜 并且平行于第一电极延伸，以及形成在第一层间绝缘膜和第二层间绝缘膜之间的第二电极。 第二电极包括由金属制成的导电膜和防止导电膜中包含的导电材料扩散的防扩散膜。

    Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices
    3.
    发明授权
    Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices 有权
    非易失性存储器件，非易失性存储器单元以及制造非易失性存储器件的方法

    公开(公告)号：US09343672B2

    公开(公告)日：2016-05-17

    申请号：US13442595

    申请日：2012-04-09

    申请人： Chan-Jin Park ,  Sun-Jung Kim ,  Soon-Oh Park ,  Hyun-Su Ju ,  Soo-Doo Chae

    发明人： Chan-Jin Park ,  Sun-Jung Kim ,  Soon-Oh Park ,  Hyun-Su Ju ,  Soo-Doo Chae

    IPC分类号： H01L45/00 ,  H01L27/24

    CPC分类号： H01L45/1253 ,  H01L27/2472 ,  H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146

    摘要： A nonvolatile memory cell includes first and second interlayer insulating films which are separated from each other and are stacked sequentially, a first electrode which penetrates the first interlayer insulating film and the second interlayer insulating film, a resistance change film which is formed along a side surface of the first electrode and extends parallel to the first electrode, and a second electrode which is formed between the first interlayer insulating film and the second interlayer insulating film. The second electrode includes a conductive film which is made of metal and a diffusion preventing film which prevents diffusion of a conductive material contained in the conductive film.

    摘要翻译： 非易失性存储单元包括彼此分离并依次堆叠的第一和第二层间绝缘膜，穿过第一层间绝缘膜和第二层间绝缘膜的第一电极，沿着侧表面形成的电阻变化膜 并且平行于第一电极延伸，以及形成在第一层间绝缘膜和第二层间绝缘膜之间的第二电极。 第二电极包括由金属制成的导电膜和防止导电膜中包含的导电材料扩散的防扩散膜。

    Non-volatile memory device having a resistance-changeable element and method of forming the same
    6.
    发明授权
    Non-volatile memory device having a resistance-changeable element and method of forming the same 有权
    具有电阻可变元件的非易失性存储器件及其形成方法

    公开(公告)号：US08884262B2

    公开(公告)日：2014-11-11

    申请号：US13487570

    申请日：2012-06-04

    申请人： Hyun-Su Ju ,  Sun-Jung Kim ,  Soo-Doo Chae

    发明人： Hyun-Su Ju ,  Sun-Jung Kim ,  Soo-Doo Chae

    IPC分类号： H01L29/06 ,  H01L27/24 ,  H01L45/00

    CPC分类号： H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146

    摘要： A non-volatile memory device is provided wherein a lower molding layer is formed on a substrate; a first horizontal interconnection is formed on the lower molding layer; an upper molding layer is formed on the first horizontal interconnection; a pillar is formed connected to the substrate by vertically passing through the upper molding layer, the first horizontal interconnection and the lower molding layer. The pillar has a lower part and an upper part, wherein the lower part is disposed on the same level as the first horizontal interconnection and has a first width and the upper part is disposed on a higher level than the first horizontal interconnection and has a second width different from the first width.

    摘要翻译： 提供了一种非易失性存储器件，其中在基底上形成下模制层; 在下模制层上形成第一水平互连; 上模塑层形成在第一水平互连上; 通过垂直地穿过上模制层，第一水平互连和下模制层而形成连接到基板的支柱。 所述支柱具有下部和上部，其中所述下部设置在与所述第一水平互连相同的高度上并具有第一宽度，并且所述上部设置在比所述第一水平互连更高的高度上，并且具有第二 宽度与第一宽度不同。

    NON-VOLATILE MEMORY DEVICE HAVING A RESISTANCE-CHANGEABLE ELEMENT AND METHOD OF FORMING THE SAME
    7.
    发明申请
    NON-VOLATILE MEMORY DEVICE HAVING A RESISTANCE-CHANGEABLE ELEMENT AND METHOD OF FORMING THE SAME 有权
    具有电阻可变元件的非易失性存储器件及其形成方法

    公开(公告)号：US20120305877A1

    公开(公告)日：2012-12-06

    申请号：US13487570

    申请日：2012-06-04

    申请人： Hyun-Su Ju ,  Sun-Jung Kim ,  Soo-Doo Chae

    发明人： Hyun-Su Ju ,  Sun-Jung Kim ,  Soo-Doo Chae

    IPC分类号： H01L47/00

    CPC分类号： H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146

    摘要： A non-volatile memory device is provided wherein a lower molding layer is formed on a substrate; a first horizontal interconnection is formed on the lower molding layer; an upper molding layer is formed on the first horizontal interconnection; a pillar is formed connected to the substrate by vertically passing through the upper molding layer, the first horizontal interconnection and the lower molding layer. The pillar has a lower part and an upper part, wherein the lower part is disposed on the same level as the first horizontal interconnection and has a first width and the upper part is disposed on a higher level than the first horizontal interconnection and has a second width different from the first width.

    摘要翻译： 提供了一种非易失性存储器件，其中在基底上形成下模制层; 在下模制层上形成第一水平互连; 上模塑层形成在第一水平互连上; 通过垂直地穿过上模制层，第一水平互连和下模制层而形成连接到基板的支柱。 支柱具有下部和上部，其中下部设置在与第一水平互连相同的高度上并具有第一宽度，并且上部设置在比第一水平互连更高的高度上，并且具有第二 宽度与第一宽度不同。