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    ELECTRODE, PHOTOVOLTAIC DEVICE, AND METHOD OF MAKING
    5.
    发明申请
    ELECTRODE, PHOTOVOLTAIC DEVICE, AND METHOD OF MAKING 审中-公开
    电极，光电器件及其制造方法

    公开(公告)号：US20120132268A1

    公开(公告)日：2012-05-31

    申请号：US12956761

    申请日：2010-11-30

    申请人： Juan Carlos Rojo ,  Bastiaan Arie Korevaar ,  Hongbo Cao ,  Jinbo Cao ,  Joseph Darryl Michael

    发明人： Juan Carlos Rojo ,  Bastiaan Arie Korevaar ,  Hongbo Cao ,  Jinbo Cao ,  Joseph Darryl Michael

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/022466 ,  H01L31/073 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

    摘要： In one aspect of the present invention, a transparent electrode, is presented. The transparent electrode includes a substrate and a transparent layer disposed on the substrate. The transparent layer includes (a) a first region including cadmium tin oxide; (b) a second region including tin and oxygen; and (c) a transition region including cadmium, tin, and oxygen interposed between the first region and the second region, wherein an atomic ratio of cadmium to tin in the transition region varies across a thickness of the transition region. The second region further has an electrical resistivity greater than an electrical resistivity of the first region. A photovoltaic device, a photovoltaic module, a method of making is also presented.

    摘要翻译： 在本发明的一个方面，提供了一种透明电极。 透明电极包括基板和设置在基板上的透明层。 透明层包括（a）包括氧化镉锡的第一区域; （b）包括锡和氧的第二区域; 和（c）介于第一区域和第二区域之间的包括镉，锡和氧的过渡区域，其中过渡区域中镉与锡的原子比在过渡区域的厚度上变化。 第二区域还具有大于第一区域的电阻率的电阻率。 还提出了光电器件，光伏模块，制造方法。

    METHODS FOR FORMING BACK CONTACT ELECTRODES FOR CADMIUM TELLURIDE PHOTOVOLTAIC CELLS
    6.
    发明申请
    METHODS FOR FORMING BACK CONTACT ELECTRODES FOR CADMIUM TELLURIDE PHOTOVOLTAIC CELLS 有权
    用于形成用于碲化镉光伏电池的反接触电极的方法

    公开(公告)号：US20110259423A1

    公开(公告)日：2011-10-27

    申请号：US12765225

    申请日：2010-04-22

    申请人： Bastiaan Arie Korevaar ,  Juan Carlos Rojo ,  Roman Shuba

    发明人： Bastiaan Arie Korevaar ,  Juan Carlos Rojo ,  Roman Shuba

    IPC分类号： H01L31/0296 ,  H01L31/0216

    CPC分类号： H01L31/022441 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/073 ,  H01L33/0083 ,  Y02E10/543

    摘要： A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.

    摘要翻译： 提供一种用于形成包括至少一个半导体层的光伏电池的背接触的方法。 该方法包括在半导体层的表面上施加化学活性材料的连续膜并激活化学活性材料，使得活化的材料蚀刻半导体层的表面。 该方法还包括从光伏电池移除活化材料的连续膜并在半导体层的蚀刻表面上沉积金属接触层。

    Methods for forming back contact electrodes for cadmium telluride photovoltaic cells
    7.
    发明授权
    Methods for forming back contact electrodes for cadmium telluride photovoltaic cells 有权
    形成碲化镉光电池的接触电极的方法

    公开(公告)号：US08524524B2

    公开(公告)日：2013-09-03

    申请号：US12765225

    申请日：2010-04-22

    申请人： Bastiaan Arie Korevaar ,  Juan Carlos Rojo ,  Roman Shuba

    发明人： Bastiaan Arie Korevaar ,  Juan Carlos Rojo ,  Roman Shuba

    IPC分类号： H01L21/00

    CPC分类号： H01L31/022441 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/073 ,  H01L33/0083 ,  Y02E10/543

    摘要： A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.

    摘要翻译： 提供一种用于形成包括至少一个半导体层的光伏电池的背接触的方法。 该方法包括在半导体层的表面上施加化学活性材料的连续膜并激活化学活性材料，使得活化的材料蚀刻半导体层的表面。 该方法还包括从光伏电池移除活化材料的连续膜并在半导体层的蚀刻表面上沉积金属接触层。

    PHOTOVOLTAIC CELL AND METHODS FOR FORMING A BACK CONTACT FOR A PHOTOVOLTAIC CELL
    8.
    发明申请
    PHOTOVOLTAIC CELL AND METHODS FOR FORMING A BACK CONTACT FOR A PHOTOVOLTAIC CELL 审中-公开
    用于形成光伏电池背部接触的光电池和方法

    公开(公告)号：US20110315220A1

    公开(公告)日：2011-12-29

    申请号：US12826234

    申请日：2010-06-29

    申请人： Bastiaan Arie Korevaar ,  Juan Carlos Rojo ,  Faisal Razi Ahmad ,  David William Vernooy

    发明人： Bastiaan Arie Korevaar ,  Juan Carlos Rojo ,  Faisal Razi Ahmad ,  David William Vernooy

    IPC分类号： H01L31/0376 ,  H01L31/18 ,  H01L31/0256

    CPC分类号： H01L31/073 ,  H01L31/022425 ,  H01L31/02963 ,  H01L31/03925 ,  H01L31/1836 ,  Y02E10/543

    摘要： Methods are provided for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer. One method includes depositing at least one back contact material on a metal contact. The back contact material comprises a metal nitride or a metal phosphide. The method further includes depositing an absorber layer comprising cadmium and tellurium above the back contact material and thermally processing the back contact material, such that the back contact material interacts with the absorber layer to form an interlayer that lowers a contact resistance for the photovoltaic cell. A photovoltaic cell is also provided and includes comprising a metal contact, at least one back contact material disposed on the metal contact, and an absorber layer comprising a material comprising cadmium and tellurium disposed above the back contact material. An interlayer is disposed between the back contact material and the absorber layer and comprises a compositionally graded layer of the back contact material and the absorber layer material. The photovoltaic cell further includes a window layer disposed above the absorber layer.

    摘要翻译： 提供了用于形成包括至少一个半导体层的光伏电池的背接触的方法。 一种方法包括在金属接触件上沉积至少一个背接触材料。 背面接触材料包括金属氮化物或金属磷化物。 该方法还包括在背接触材料上沉积包括镉和碲的吸收层，并对后接触材料进行热处理，使得背接触材料与吸收层相互作用以形成降低光伏电池的接触电阻的中间层。 还提供了一种光伏电池，其包括金属接触件，设置在金属接触件上的至少一个背接触材料以及包含设置在背面接触材料上方的包含镉和碲的材料的吸收层。 中间层设置在背接触材料和吸收层之间，并且包括背接触材料和吸收层材料的组成梯度层。 光伏电池还包括设置在吸收层上方的窗口层。

    NANOSTRUCTURED ANTI-REFLECTION COATINGS AND ASSOCIATED METHODS AND DEVICES
    10.
    发明申请
    NANOSTRUCTURED ANTI-REFLECTION COATINGS AND ASSOCIATED METHODS AND DEVICES 审中-公开
    纳米结构抗反射涂层及相关方法和装置

    公开(公告)号：US20100259823A1

    公开(公告)日：2010-10-14

    申请号：US12421101

    申请日：2009-04-09

    申请人： Yangang Andrew Xi ,  Loucas Tsakalakos ,  Bastiaan Arie Korevaar ,  Todd Ryan Tolliver ,  Dalong Zhong

    发明人： Yangang Andrew Xi ,  Loucas Tsakalakos ,  Bastiaan Arie Korevaar ,  Todd Ryan Tolliver ,  Dalong Zhong

    IPC分类号： G02B1/11 ,  B44C1/22 ,  B05D5/12

    CPC分类号： G02B1/118

    摘要： An anti-reflection coating is described. The coating is disposed on a surface of a substrate. The anti-reflection coating includes an array of substantially transparent nanostructures having a primary axis substantially perpendicular to the surface of the substrate. The array of substantially transparent nanostructures is characterized by a graded refractive index. In some embodiments, each of the nanostructures has a substantially uniform cross-sectional area along the primary axis. Related methods and devices are also described.

    摘要翻译： 描述了防反射涂层。 涂层设置在基板的表面上。 抗反射涂层包括基本上透明的纳米结构的阵列，其具有基本上垂直于基底表面的主轴。 基本上透明的纳米结构的阵列的特征在于梯度折射率。 在一些实施例中，每个纳米结构具有沿主轴线的基本均匀的横截面积。 还描述了相关方法和装置。