摘要:
Process and apparatus are generally provided for forming a thin film photovoltaic device. In one particular embodiment, the process includes: depositing a photovoltaic absorber layer on a glass substrate; heating the glass substrate to an anneal temperature; and quenching the glass substrate to cool the glass substrate to a quenched temperature in less than 10 seconds. The quenched temperature can be about 85° C. to about 200° C. less than the anneal temperature. The quenching atmosphere can have a quenching pressure of about 1 torr or more and can include an inert gas.
摘要:
A system for depositing two or more materials on a substrate is provided. The system comprises one or more susceptors configured to define two or more recesses for accommodating at least a first material and a second material respectively. The first and second materials are different. The system further comprises one or more heaters for heating the first material and the second material for sublimation of the first and second materials for deposition on the substrate. A method for depositing two or more materials on a substrate is also presented.
摘要:
A photovoltaic device including a composite down-converting layer disposed on the device, is presented. The composite down-converting layer includes down-converting material particles dispersed in a matrix. The size of the down-converting material particles is a function of a difference in respective refractive indices (Δn) of the down-converting material and the matrix such that: (i) for Δn less than about 0.05, the size of down-converting material particles is in a range from about 0.5 micron to about 10 microns, and (ii) for Δn at least about 0.05, the size of down-converting material particles is in a range from about 1 nanometer to about 500. A photovoltaic module having a plurality of such photovoltaic devices is also presented.
摘要:
In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10−4 Ohm-cm. Method of making a photovoltaic device is also provided.
摘要:
A photovoltaic device having a down-converting layer disposed on the device, is presented. The down-converting layer have a graded refractive index, wherein a value of refractive index at a first surface of the down-converting layer varies from a value of refractive index at a second surface of the layer. A photovoltaic module having a plurality of such photovoltaic devices is also presented.
摘要:
In one aspect of the present invention, a photovoltaic device having a down-converting layer is presented. The device includes a glass plate having a first surface and a second surface. The first surface is exposed to ambient radiation. A transparent conductive layer is disposed adjacent to the second surface of the glass plate. The device further includes a first type semiconductor layer disposed adjacent to the transparent conductive layer and a second type semiconductor layer disposed adjacent to the first type semiconductor layer. The down-converting layer is interposed between the second surface of the glass plate and the transparent conducting layer. The down-converting layer exhibits an effective refractive index that has a value between the respective refractive indices of the glass plate and the transparent conductive layer. A photovoltaic module having a plurality of such photovoltaic devices is also presented.
摘要:
A photovoltaic device is provided. The photovoltaic device comprises an absorber layer comprising a p-type semiconductor, wherein at least one layer is disposed over the absorber layer. The at least one layer is a semiconductor having a higher carrier density than the carrier density of the absorber layer. The at least one layer comprises silicon. The at least one layer comprises a p+-type semiconductor. The absorber layer is substantially free of silicon. A method of forming the photovoltaic device is provided.
摘要:
Process and apparatus are generally provided for forming a thin film photovoltaic device. In one particular embodiment, the process includes: depositing a photovoltaic absorber layer on a glass substrate; heating the glass substrate to an anneal temperature; and quenching the glass substrate to cool the glass substrate to a quenched temperature in less than 10 seconds. The quenched temperature can be about 85° C. to about 200° C. less than the anneal temperature. The quenching atmosphere can have a quenching pressure of about 1 torr or more and can include an inert gas.
摘要:
In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10−4 Ohm-cm. Method of making a photovoltaic device is also provided.
摘要:
In one aspect of the present invention, a method is included. The method includes thermally processing an assembly to form at least one transparent layer. The assembly includes a first panel including a first layer disposed on a first support and a second panel including a second layer disposed on a second support, wherein the second panel faces the first panel, and wherein the first layer and the second layer include substantially amorphous cadmium tin oxide. Method of making a photovoltaic device is also included.