摘要:
A method of manufacturing a transparent oxide layer is provided. The manufacturing method includes disposing a cadmium tin oxide layer on a support, placing the support with the cadmium tin oxide layer within a chamber of a rapid thermal annealing system, and rapidly thermally annealing the cadmium tin oxide layer by exposing the cadmium tin oxide layer to electromagnetic radiation to form the transparent oxide layer, wherein the rapid thermal anneal is performed without first pumping down the chamber.
摘要:
A photovoltaic device is presented. The device includes a first semiconductor layer disposed on a second semiconductor layer. The first semiconductor layer includes a compound having a metal species, sulfur, and oxygen. The metal species may include zinc, magnesium, tin, indium, or a combination thereof. Method for making a photovoltaic device is also presented.
摘要:
In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10−4 Ohm-cm. Method of making a photovoltaic device is also provided.
摘要:
Luminescent nanostructures (e.g., nanowires) and devices are provided which are capable of emitting bright visible light. The luminescent nanowires are most preferably in the form of a doped ZnO having a spectrally integrated ratio of visible to UV light of at least about 1000 or greater. The dopant for the ZnO luminescent nanowires may be at least one of sulfur, selenium, oxygen, zinc, magnesium, aluminum, with sulfur being especially preferred. The doped ZnO luminescent nanowires may be provided in devices for emitting visible light whereby visible light is emitted by the doped ZnO luminescent nanowires in response to excitation by UV light provided by a UV light source. The device may preferably comprise a transparent or translucent lens covering the UV light source, wherein the doped ZnO luminescent nanowires are present as a coating on a surface of the lens. In some embodiments, the device will comprise multiple UV light sources. Devices of the present invention may be provided with a flat panel lens which is positioned adjacent the multiple UV light sources and has a coating of the doped ZnO luminescent nanowires thereon.
摘要:
Luminescent nanostructures (e.g., nanowires) and devices are provided which are capable of emitting bright visible light. The luminescent nanowires are most preferably in the form of a doped ZnO having a spectrally integrated ratio of visible to UV light of at least about 1000 or greater. The dopant for the ZnO luminescent nanowires may be at least one of sulfur, selenium, oxygen, zinc, magnesium, aluminum, with sulfur being especially preferred. The doped ZnO luminescent nanowires may be provided in devices for emitting visible light whereby visible light is emitted by the doped ZnO luminescent nanowires in response to excitation by UV light provided by a UV light source. The device may preferably comprise a transparent or translucent lens covering the UV light source, wherein the doped ZnO luminescent nanowires are present as a coating on a surface of the lens. In some embodiments, the device will comprise multiple UV light sources. Devices of the present invention may be provided with a flat panel lens which is positioned adjacent the multiple UV light sources and has a coating of the doped ZnO luminescent nanowires thereon.
摘要:
A photovoltaic device is presented. The photovoltaic device includes a transparent conductive layer; a window layer disposed on the transparent conductive layer; and an absorber layer disposed on the window layer. The window layer includes a low-diffusivity layer disposed adjacent to the transparent conductive layer and a high-diffusivity layer interposed between the low-diffusivity layer and the absorber layer. Method of making a photovoltaic device is also presented.
摘要:
Embodiments of the present invention include a method. The method includes heating a layer stack. The layer stack includes a first layer comprising cadmium and tin, a metal layer disposed over the first layer, and a window layer disposed over the metal layer. Heating the stack includes transforming at least a portion of the first layer from an amorphous phase to a crystalline phase. Heating may be performed using any of various configurations, such as, for example, heating an individual stack, or using a face-to-face configuration of multiple stacks. The stack may be used for fabricating a photovoltaic device.
摘要:
In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10−4 Ohm-cm. Method of making a photovoltaic device is also provided.
摘要:
In one aspect of the present invention, a method is included. The method includes thermally processing an assembly to form at least one transparent layer. The assembly includes a first panel including a first layer disposed on a first support and a second panel including a second layer disposed on a second support, wherein the second panel faces the first panel, and wherein the first layer and the second layer include substantially amorphous cadmium tin oxide. Method of making a photovoltaic device is also included.
摘要:
A method of manufacturing a transparent oxide layer is provided. The manufacturing method includes disposing a cadmium tin oxide layer on a support, placing the support with the cadmium tin oxide layer within a chamber of a rapid thermal annealing system, and rapidly thermally annealing the cadmium tin oxide layer by exposing the cadmium tin oxide layer to electromagnetic radiation to form the transparent oxide layer, wherein the rapid thermal anneal is performed without first pumping down the chamber.