MULTIPLE PORT GAS INJECTION SYSTEM UTILIZED IN A SEMICONDUCTOR PROCESSING SYSTEM
    5.
    发明申请
    MULTIPLE PORT GAS INJECTION SYSTEM UTILIZED IN A SEMICONDUCTOR PROCESSING SYSTEM 审中-公开
    在半导体处理系统中使用的多个端口气体注入系统

    公开(公告)号:US20090221149A1

    公开(公告)日:2009-09-03

    申请号:US12039262

    申请日:2008-02-28

    IPC分类号: H01L21/306

    CPC分类号: H01J37/32449 H01J37/3244

    摘要: An apparatus having a multiple gas injection port system for providing a high uniform etching rate across the substrate is provided. In one embodiment, the apparatus includes a nozzle in the semiconductor processing apparatus having a hollow cylindrical body having a first outer diameter defining a hollow cylindrical sleeve and a second outer diameter defining a tip, a longitudinal passage formed longitudinally through the body of the hollow cylindrical sleeve and at least partially extending to the tip, and a lateral passage formed in the tip coupled to the longitudinal passage, the lateral passage extending outward from the longitudinal passage having an opening formed on an outer surface of the tip.

    摘要翻译: 提供了一种具有多个气体注入端口系统的设备,用于在衬底上提供高均匀的蚀刻速率。 在一个实施例中,该设备包括在半导体处理设备中的喷嘴,其具有中空圆柱体,其具有限定中空圆柱形套筒的第一外径和限定尖端的第二外径,纵向通道纵向穿过中空圆柱体 并且至少部分地延伸到尖端,以及形成在连接到纵向通道的尖端中的侧向通道,从纵向通道向外延伸的侧向通道具有形成在尖端的外表面上的开口。