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1.发明申请ETCH RATE AND CRITICAL DIMENSION UNIFORMITY BY SELECTION OF FOCUS RING MATERIAL 审中-公开通过选择聚焦材料的蚀刻速率和关键尺寸均匀性公开(公告)号：US20090221150A1
公开(公告)日：2009-09-03
申请号：US12395465
申请日：2009-02-27
申请人： Edward P. Hammond, IV , Jing Zou , Rodolfo P. Belen , Meihua Shen , Nicolas Gani , Andrew Nguyen , David Palagashvili , Michael D. Willwerth
发明人： Edward P. Hammond, IV , Jing Zou , Rodolfo P. Belen , Meihua Shen , Nicolas Gani , Andrew Nguyen , David Palagashvili , Michael D. Willwerth
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32642 , H01J37/321 , H01J37/3244 , H01J37/32623 , H01J2237/334 , H01L21/67069 , H01L21/68735
摘要： A method and apparatus are provided for plasma etching a substrate in a processing chamber. A focus ring assembly circumscribes a substrate support, providing uniform processing conditions near the edge of the substrate. The focus ring assembly comprises two rings, a first ring and a second ring, the first ring comprising quartz, and the second ring comprising monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, or combinations thereof. The second ring is disposed above the first ring near the edge of the substrate, and creates a uniform electric field and gas composition above the edge of the substrate that results in uniform etching across the substrate surface.
摘要翻译： 提供了一种用于等离子体蚀刻处理室中的衬底的方法和装置。 聚焦环组件围绕衬底支撑件，在衬底的边缘附近提供均匀的加工条件。 聚焦环组件包括两个环，第一环和第二环，第一环包括石英，第二环包括单晶硅，碳化硅，氮化硅，碳氧化硅，氮氧化硅或其组合。 第二环设置在基板边缘附近的第一环上方，并且在衬底的边缘上方产生均匀的电场和气体组成，导致穿过衬底表面的均匀蚀刻。
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2.发明申请MULTIPLE PORT GAS INJECTION SYSTEM UTILIZED IN A SEMICONDUCTOR PROCESSING SYSTEM 审中-公开在半导体处理系统中使用的多个端口气体注入系统公开(公告)号：US20090221149A1
公开(公告)日：2009-09-03
申请号：US12039262
申请日：2008-02-28
申请人： Edward P. Hammond, IV , Rodolfo P. Belen , Nicolas Gani , Jing Zou , Meihua Shen , Michael D. Willwerth , David Palagashvili
发明人： Edward P. Hammond, IV , Rodolfo P. Belen , Nicolas Gani , Jing Zou , Meihua Shen , Michael D. Willwerth , David Palagashvili
IPC分类号： H01L21/306
CPC分类号： H01J37/32449 , H01J37/3244
摘要： An apparatus having a multiple gas injection port system for providing a high uniform etching rate across the substrate is provided. In one embodiment, the apparatus includes a nozzle in the semiconductor processing apparatus having a hollow cylindrical body having a first outer diameter defining a hollow cylindrical sleeve and a second outer diameter defining a tip, a longitudinal passage formed longitudinally through the body of the hollow cylindrical sleeve and at least partially extending to the tip, and a lateral passage formed in the tip coupled to the longitudinal passage, the lateral passage extending outward from the longitudinal passage having an opening formed on an outer surface of the tip.
摘要翻译： 提供了一种具有多个气体注入端口系统的设备，用于在衬底上提供高均匀的蚀刻速率。 在一个实施例中，该设备包括在半导体处理设备中的喷嘴，其具有中空圆柱体，其具有限定中空圆柱形套筒的第一外径和限定尖端的第二外径，纵向通道纵向穿过中空圆柱体 并且至少部分地延伸到尖端，以及形成在连接到纵向通道的尖端中的侧向通道，从纵向通道向外延伸的侧向通道具有形成在尖端的外表面上的开口。
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3.发明申请PLASMA PROCESS EMPLOYING MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS 审中-公开采用多区域气体分配的等离子体过程改进关键尺寸偏差的均匀性公开(公告)号：US20090275206A1
公开(公告)日：2009-11-05
申请号：US12143146
申请日：2008-06-20
申请人： Dan Katz , David Palagashvili , Brian K. Hatcher , Theodoros Panagopoulos , Valentin N. Todorow , Edward P. Hammond, IV , Alexander M. Paterson , Rodolfo P. Belen
发明人： Dan Katz , David Palagashvili , Brian K. Hatcher , Theodoros Panagopoulos , Valentin N. Todorow , Edward P. Hammond, IV , Alexander M. Paterson , Rodolfo P. Belen
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/3244 , H01J37/32449
摘要： A passivation species precursor gas is furnished to an inner zone at a first flow rate, while flowing an etchant species precursor gas an annular intermediate zone at a second flow rate. Radial distribution of etch rate is controlled by the ratio of the first and second flow rates. The radial distribution of etch critical dimension bias on the wafer is controlled by flow rate of passivation gas to the wafer edge.
摘要翻译： 钝化物质前体气体以第一流速被提供到内部区域，同时以蚀刻剂物质前体气体以第二流速流动环形中间区域。 蚀刻速率的径向分布由第一和第二流速的比率控制。 蚀刻临界尺寸偏置在晶片上的径向分布由通向晶片边缘的钝化气体的流速来控制。
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4.发明申请PLASMA REACTOR WITH CENTER-FED MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS 失效具有中心多区域气体分配的等离子体反应器，用于改进关键尺寸偏差的均匀性公开(公告)号：US20090272492A1
公开(公告)日：2009-11-05
申请号：US12143092
申请日：2008-06-20
申请人： Dan Katz , David Palagashvili , Brain K. Hatcher , Theodoros Panagopoulos , Valentin N. Todorow , Edward P. Hammond, IV , Alexander M. Paterson , Rodolfo P. Belen
发明人： Dan Katz , David Palagashvili , Brain K. Hatcher , Theodoros Panagopoulos , Valentin N. Todorow , Edward P. Hammond, IV , Alexander M. Paterson , Rodolfo P. Belen
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/3244 , H01J37/32449
摘要： A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub.
摘要翻译： 用于等离子体反应器的天花板的气体分配组件包括中心供给的轮毂和位于中心供给轮毂下方的相等路径长度的分配气体歧管。
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5.发明授权Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias 失效具有中心馈送多区域气体分布的等离子体反应器，用于改善临界尺寸偏差的均匀性公开(公告)号：US08236133B2
公开(公告)日：2012-08-07
申请号：US12143092
申请日：2008-06-20
申请人： Dan Katz , David Palagashvili , Brian K. Hatcher , Theodoros Panagopoulos , Valentin N. Todorow , Edward P. Hammond, IV , Alexander M. Paterson , Rodolfo P. Belen
发明人： Dan Katz , David Palagashvili , Brian K. Hatcher , Theodoros Panagopoulos , Valentin N. Todorow , Edward P. Hammond, IV , Alexander M. Paterson , Rodolfo P. Belen
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/3244 , H01J37/32449
摘要： A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub.
摘要翻译： 用于等离子体反应器的天花板的气体分配组件包括中心供给的轮毂和位于中心供给轮毂下方的相等路径长度的分配气体歧管。
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公开(公告)号：US20090218317A1
公开(公告)日：2009-09-03
申请号：US12039350
申请日：2008-02-28
申请人： RODOLFO P. BELEN , Edward P. Hammond, IV , Brian K. Hatcher , Dan Katz , Alexander M. Paterson , Valentin N. Todorow
发明人： RODOLFO P. BELEN , Edward P. Hammond, IV , Brian K. Hatcher , Dan Katz , Alexander M. Paterson , Valentin N. Todorow
CPC分类号： C23C16/45565 , C23C16/45574 , H01J37/3244 , H01J37/32449
摘要： Embodiments of the present invention provide apparatus and method for processing a substrate with increased uniformity. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus comprises a chamber body defining a processing volume, a substrate support disposed in the processing volume, a showerhead disposed in the processing volume opposite to the substrate support, and a plasma generation assembly configured to ignite a plasma from the processing gases in the processing gas in the processing volume. The showerhead is configured to provide one or more processing gases to the processing volume. The showerhead has two or more distribution zones each independently controllable.
摘要翻译： 本发明的实施例提供了用于以均匀性增加来处理衬底的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置。 该装置包括限定处理体积的室主体，设置在处理容积中的基板支撑件，设置在与基板支撑件相对的处理体积中的喷头，以及等离子体产生组件，其被配置为在处理中点燃来自处理气体的等离子体 气体处理量。 喷头构造成为处理量提供一种或多种处理气体。 喷头具有两个或更多个分配区，每个分配区可独立控制。
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7.发明申请Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process 失效通过在等离子体蚀刻工艺中双重HF / VHF源的有效频率进行栅极分布控制公开(公告)号：US20090142930A1
公开(公告)日：2009-06-04
申请号：US11998829
申请日：2007-11-30
申请人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
发明人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01J37/32091 , H01J37/321 , H01J37/32165 , H01L21/28035
摘要： A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafer to respective optimum levels.
摘要翻译： 一种在等离子体中处理晶片的方法，其中通过将同时耦合到晶片的VHF和HF功率的相应功率电平设置为相应的最佳电平，在预定的工艺条件下同时实现两个不同等离子体工艺参数的目标值。
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公开(公告)号：US08066895B2
公开(公告)日：2011-11-29
申请号：US12039350
申请日：2008-02-28
申请人： Rodolfo P. Belen , Edward P. Hammond, IV , Brian K. Hatcher , Dan Katz , Alexander M. Paterson , Valentin N. Todorow
发明人： Rodolfo P. Belen , Edward P. Hammond, IV , Brian K. Hatcher , Dan Katz , Alexander M. Paterson , Valentin N. Todorow
CPC分类号： C23C16/45565 , C23C16/45574 , H01J37/3244 , H01J37/32449
摘要： Embodiments of the present invention provide apparatus and method for processing a substrate with increased uniformity. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus comprises a chamber body defining a processing volume, a substrate support disposed in the processing volume, a showerhead disposed in the processing volume opposite to the substrate support, and a plasma generation assembly configured to ignite a plasma from the processing gases in the processing gas in the processing volume. The showerhead is configured to provide one or more processing gases to the processing volume. The showerhead has two or more distribution zones each independently controllable.
摘要翻译： 本发明的实施例提供了用于以均匀性增加来处理衬底的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置。 该装置包括限定处理体积的室主体，设置在处理容积中的基板支撑件，设置在与基板支撑件相对的处理体积中的喷头，以及等离子体产生组件，其被配置为在处理中点燃来自处理气体的等离子体 气体处理量。 喷头构造成为处理量提供一种或多种处理气体。 喷头具有两个或更多个分配区，每个分配区可独立控制。
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9.发明授权Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process 失效通过在等离子体蚀刻工艺中双重HF / VHF源的有效频率进行栅极分布控制公开(公告)号：US08017526B2
公开(公告)日：2011-09-13
申请号：US11998829
申请日：2007-11-30
申请人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
发明人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
IPC分类号： H01L21/302
CPC分类号： H01L21/32137 , H01J37/32091 , H01J37/321 , H01J37/32165 , H01L21/28035
摘要： A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafer to respective optimum levels.
摘要翻译： 一种在等离子体中处理晶片的方法，其中通过将同时耦合到晶片的VHF和HF功率的相应功率电平设置为相应的最佳电平，在预定工艺条件下同时实现两个不同等离子体工艺参数的目标值。
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10.发明申请Method of controlling CD bias and CD microloading by changing the ceiling-to-wafer gap in a plasma reactor 审中-公开通过改变等离子体反应器中的天花板到晶片间隙来控制CD偏压和CD微载荷的方法公开(公告)号：US20090156011A1
公开(公告)日：2009-06-18
申请号：US12001986
申请日：2007-12-12
申请人： Rodolfo P. Belen , Edward P. Hammond, IV , Dan Katz , Valentin N. Todorow , Brian K. Hatcher , Alexander M. Paterson
发明人： Rodolfo P. Belen , Edward P. Hammond, IV , Dan Katz , Valentin N. Todorow , Brian K. Hatcher , Alexander M. Paterson
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01L22/20
摘要： In a plasma etch process, critical dimension (CD), CD bias and CD bias microloading are controlled independently of plasma process conditions or parameters, such as RF power levels, pressure and gas flow rate, by depressing or elevating the workpiece support pedestal to vary the gap between the workpiece and the chamber ceiling facing the workpiece, using an axially adjustable workpiece support.
摘要翻译： 在等离子体蚀刻工艺中，临时尺寸（CD），CD偏压和CD偏压微载荷独立于等离子体工艺条件或参数（例如RF功率水平，压力和气体流量）被控制，通过按压或升高工件支撑座以改变 使用可轴向调节的工件支撑件，工件与室顶面之间的工件间隙。
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