摘要:
A circuit structure includes a substrate; a first amorphous silicon layer over the substrate; a first glue layer over and adjoining the first amorphous silicon layer; and a second amorphous silicon layer over and adjoining the first glue layer.
摘要:
A circuit structure includes a substrate; a first amorphous silicon layer over the substrate; a first glue layer over and adjoining the first amorphous silicon layer; and a second amorphous silicon layer over and adjoining the first glue layer.
摘要:
One embodiment is a method of forming a circuit structure. The method comprises forming a first amorphous layer over a substrate; forming a first glue layer over and adjoining the first amorphous layer; forming a second amorphous layer over and adjoining the first glue layer; and forming a plurality of posts separated from each other by removing a first portion of the first amorphous layer and a first portion of the second amorphous layer. At least some of the plurality of posts each comprises a second portion of the first amorphous layer, a first portion of the first glue layer, and a second portion of the second amorphous layer.
摘要:
One embodiment is a method of forming a circuit structure. The method comprises forming a first amorphous layer over a substrate; forming a first glue layer over and adjoining the first amorphous layer; forming a second amorphous layer over and adjoining the first glue layer; and forming a plurality of posts separated from each other by removing a first portion of the first amorphous layer and a first portion of the second amorphous layer. At least some of the plurality of posts each comprises a second portion of the first amorphous layer, a first portion of the first glue layer, and a second portion of the second amorphous layer.
摘要:
When a native oxide grows on a polysilicon member of, e.g., a MEMS device, delamination between the polysilicon member and subsequently formed layers may occur because the native oxide is undercut during removal of sacrificial oxide layers. Nitriding the native oxide increases the etch selectivity relative the sacrificial oxide layers. Undercutting and delamination is hence reduced or eliminated altogether.
摘要:
An integrated circuit structure includes a capacitor, which further includes a first capacitor plate formed of polysilicon, and a second capacitor plate substantially encircling the first capacitor plate. The first capacitor plate has a portion configured to vibrate in response to an acoustic wave. The second capacitor plate is fixed and has slanted edges facing the first capacitor plate.
摘要:
A gyroscope sensor includes a gyro disk. A first light source is configured to provide a first light beam. A first light receiver is configured to receive the first light beam for sensing a vibration at a first direction of the gyro disk. A second light source is configured to provide a second light beam substantially parallel with the first light beam. A second light receiver is configured to receive the second light beam for sensing a vibration in a second direction of the gyro disk. The second direction is different from the first direction.
摘要:
An integrated circuit, a method of operating the integrated circuit, and a method of fabricating the integrated circuit are disclosed. According to one of the broader forms of the invention, a method and apparatus involve an integrated circuit that includes a heat transfer structure having a chamber that has a fluid disposed therein and that extends between a heat generating portion and a heat absorbing portion. Heat is absorbed into the fluid from the heat generating portion, and the fluid changes from a first phase to a second phase different from the first phase when the heat is absorbed. Heat is released from the fluid to the heat absorbing portion, and the fluid changes from the second phase to the first phase when the heat is released.
摘要:
A method of forming an integrated circuit structure including providing a wafer comprising a front surface and a back surface, wherein the wafer comprises a chip; forming an opening extending from the back surface into the chip; filling an organic material in the opening, wherein substantially no portion of the organic material is outside of the opening and on the back surface of the wafer; and baking the organic material to cause a contraction of the organic material.
摘要:
An integrated circuit structure includes a substrate having a top surface; a first conductive layer over and contacting the top surface of the substrate; a dielectric layer over and contacting the first conductive layer, wherein the dielectric layer includes an opening exposing a portion of the first conductive layer; and a proof-mass in the opening and including a second conductive layer at a bottom of the proof-mass. The second conductive layer is spaced apart from the portion of the first conductive layer by an air space. Springs anchor the proof-mass to portions of the dielectric layer encircling the opening. The springs are configured to allow the proof-mass to make three-dimensional movements.