Evaluation of openings in a dielectric layer
    1.
    发明申请
    Evaluation of openings in a dielectric layer 失效
    评估电介质层中的开口

    公开(公告)号:US20060094136A1

    公开(公告)日:2006-05-04

    申请号:US10979397

    申请日:2004-11-01

    IPC分类号: H01L21/66 H01L21/00

    摘要: A patterned dielectric layer is evaluated by measuring reflectance of a region which has openings. A heating beam may be chosen for having reflectance from an underlying conductive layer that is several times greater than absorptance, to provide a heightened sensitivity to presence of residue and/or changes in dimension of the openings. Reflectance may be measured by illuminating the region with a heating beam modulated at a preset frequency, and measuring power of a probe beam that reflects from the region at the preset frequency. Openings of many embodiments have sub-wavelength dimensions (i.e. smaller than the wavelength of the heating beam). The underlying conductive layer may be patterned into links of length smaller than the diameter of heating beam, so that the links float to a temperature higher than a corresponding temperature attained by a continuous trace that transfers heat away from the illuminated region by conduction.

    摘要翻译: 通过测量具有开口的区域的反射率来评估图案化的介电层。 加热束可以被选择为具有比吸收率大几倍的下层导电层的反射率,以提供对残留物的存在和/或开口尺寸变化的更高的灵敏度。 反射率可以通过以预设频率调制的加热光束照射该区域并测量从预设频率的区域反射的探测光束的功率来测量。 许多实施例的开口具有亚波长尺寸(即小于加热束的波长)。 底层导电层可以被图案化成长度小于加热束直径的链节,使得链节浮动到高于通过传导将热量从照射区域传递的连续迹线获得的相应温度的温度。

    High throughput measurement of via defects in interconnects
    2.
    发明申请
    High throughput measurement of via defects in interconnects 有权
    互连中通孔缺陷的高通量测量

    公开(公告)号:US20050214956A1

    公开(公告)日:2005-09-29

    申请号:US10813407

    申请日:2004-03-29

    CPC分类号: G01N25/18 G01N25/72

    摘要: Heat is applied to a conductive structure that includes one or more vias, and the temperature at or near the point of heat application is measured. The measured temperature indicates the integrity or the defectiveness of various features (e.g. vias and/or traces) in the conductive structure, near the point of heat application. Specifically, a higher temperature measurement (as compared to a measurement in a reference structure) indicates a reduced heat transfer from the point of heat application, and therefore indicates a defect. The reference structure can be in the same die as the conductive structure (e.g. to provide a baseline) or outside the die but in the same wafer (e.g. in a test structure) or outside the wafer (e.g. in a reference wafer), depending on the embodiment.

    摘要翻译: 将热施加到包括一个或多个通孔的导电结构,并且测量在加热点处或附近的温度。 测量的温度表示导热结构中靠近加热点的各种特征(例如通路和/或迹线)的完整性或缺陷。 具体而言,较高的温度测量(与参考结构中的测量值相比)表示从热施加点减少的热传递,因此表示缺陷。 参考结构可以与导电结构(例如,提供基线)或模具外部在相同的晶片(例如,在测试结构中)或晶片外部(例如,在参考晶片中)处于相同的裸片中,这取决于 该实施例。

    Evaluation of openings in a dielectric layer
    3.
    发明授权
    Evaluation of openings in a dielectric layer 失效
    评估电介质层中的开口

    公开(公告)号:US07379185B2

    公开(公告)日:2008-05-27

    申请号:US10979397

    申请日:2004-11-01

    IPC分类号: G01N21/55

    摘要: A patterned dielectric layer is evaluated by measuring reflectance of a region which has openings. A heating beam may be chosen for having reflectance from an underlying conductive layer that is several times greater than absorptance, to provide a heightened sensitivity to presence of residue and/or changes in dimension of the openings. Reflectance may be measured by illuminating the region with a heating beam modulated at a preset frequency, and measuring power of a probe beam that reflects from the region at the preset frequency. Openings of many embodiments have sub-wavelength dimensions (i.e. smaller than the wavelength of the heating beam). The underlying conductive layer may be patterned into links of length smaller than the diameter of heating beam, so that the links float to a temperature higher than a corresponding temperature attained by a continuous trace that transfers heat away from the illuminated region by conduction.

    摘要翻译: 通过测量具有开口的区域的反射率来评估图案化的介电层。 加热束可以被选择为具有比吸收率大几倍的下层导电层的反射率,以提供对残留物的存在和/或开口尺寸变化的更高的灵敏度。 反射率可以通过以预设频率调制的加热光束照射该区域并测量从预设频率的区域反射的探测光束的功率来测量。 许多实施例的开口具有亚波长尺寸(即小于加热束的波长)。 底层导电层可以被图案化成长度小于加热束直径的链节,使得链节浮动到高于通过传导将热量从照射区域传递的连续迹线获得的相应温度的温度。

    Normal Incidence Broadband Spectroscopic Polarimeter and Optical Measurement System
    4.
    发明申请
    Normal Incidence Broadband Spectroscopic Polarimeter and Optical Measurement System 有权
    正常发生宽带光谱偏振仪和光学测量系统

    公开(公告)号:US20130050702A1

    公开(公告)日:2013-02-28

    申请号:US13696054

    申请日:2011-06-01

    IPC分类号: G01J3/447

    摘要: A kind of normal incidence broadband spectroscopic polarimeter which is easy to adjust the focus, has no chromatic aberration, maintains the polarization and has simple structure. The normal incidence broadband spectroscopic polarimeter can make the probe beam normal incidence and focus on the sample surface by using at least one flat reflector element to change propagation direction of the focused beam. Moreover, the normal incidence broadband spectroscopic polarimeter contains at least one polarizer as to measure the anisotropy or non-uniform samples, such as three-dimensional profile and material optical constants of thin films consisting of the periodic structure. An optical measurement system including the normal incidence broadband spectroscopic polarimeter is also provided.

    摘要翻译: 一种正常入射的宽带光谱旋光计,易于调焦,无色差,维持极化,结构简单。 正常入射的宽带光谱旋光仪可以通过使用至少一个平面反射器元件来改变聚焦光束的传播方向,使探针光束正常入射并聚焦在样品表面上。 此外,正常入射的宽带光谱旋光计包含至少一个偏振器,用于测量各向异性或非均匀样品,例如由周期性结构构成的薄膜的三维轮廓和材料光学常数。 还提供了包括正常入射宽带光谱旋光计的光学测量系统。

    SPECTROGRAPHIC METROLOGY OF PATTERNED WAFERS
    8.
    发明申请
    SPECTROGRAPHIC METROLOGY OF PATTERNED WAFERS 有权
    图形波形的光谱学方法

    公开(公告)号:US20100103411A1

    公开(公告)日:2010-04-29

    申请号:US12369627

    申请日:2009-02-11

    IPC分类号: G01J3/40 G06F17/18

    摘要: Light reflected from respective image elements of a workpiece is channeled through respective light channeling elements to respective locations of a spectrographic light disperser. Spectral distributions of the respective image elements produced by the spectrographic light disperser are recorded. A processor groups similar spectral distributions into respective groups of mutually similar distributions, and classifies the groups by the number of distributions contained in each group.

    摘要翻译: 从工件的各个图像元件反射的光通过相应的光通道元件引导到光谱光分散器的相应位置。 记录由光谱分散器产生的各个图像元素的光谱分布。 处理器将相似的光谱分布组合到相互相似分布的相应组中,并且将组分组为每组中包含的分布数。

    BROADBAND POLARIZATION SPECTROMETER WITH INCLINED INCIDENCE AND OPTICAL MEASUREMENT SYTEM
    10.
    发明申请
    BROADBAND POLARIZATION SPECTROMETER WITH INCLINED INCIDENCE AND OPTICAL MEASUREMENT SYTEM 有权
    带有入射和光学测量的宽带偏振光谱仪

    公开(公告)号:US20130070234A1

    公开(公告)日:2013-03-21

    申请号:US13701698

    申请日:2011-05-30

    IPC分类号: G01N21/21

    摘要: An oblique incidence broadband spectroscopic polarimeter which is easy to adjust the focus, achromatic, maintains the polarization and has simple structure is provided. It comprise at least one polarizer (P, A), at least one curved reflector element (OAP1, OAP2, OAP3, OAP4) and at least two flat reflector elements (M1, M2). By utilizing the flat reflector element, the oblique incidence broadband spectroscopic polarimeter can change the propagate direction of beam, and compensate the polarization changes caused by the reflective focusing unit, make the polarization of beam passed the polarizer unchanged when obliquely incident and focus on the sample surface. The oblique incidence broadband spectroscopic polarimeter can accurately measure the optical constants of sample material, film thickness, and/or the critical dimension (CD) properties or three-dimensional profile for analyze the periodic structure of the sample. An optical measurement system including the oblique incidence broadband spectroscopic polarimeter is also provided.

    摘要翻译: 提供了一种倾斜入射宽带光谱旋光计,其易于调节焦点,消色差,保持偏振并且具有简单的结构。 它包括至少一个偏振器(P,A),至少一个弯曲反射器元件(OAP1,OAP2,OAP3,OAP4)和至少两个平面反射器元件(M1,M2)。 通过利用平面反射元件,倾斜入射宽带光谱旋光计可以改变光束的传播方向,并补偿由反射聚焦单元引起的偏振变化,使得当倾斜入射时光束的偏振通过偏振器不变,并聚焦在样品上 表面。 倾斜入射宽带光谱旋光计可以精确测量样品材料的光学常数,膜厚度和/或临界尺寸(CD)性质或三维轮廓,以分析样品的周期性结构。 还提供了包括斜入射宽带光谱偏振计的光学测量系统。