Process and device for cleaning and etching a substrate with a transparent conductive oxide layer
    1.
    发明授权
    Process and device for cleaning and etching a substrate with a transparent conductive oxide layer 失效
    用透明导电氧化物层清洗和蚀刻衬底的工艺和装置

    公开(公告)号:US08425793B2

    公开(公告)日:2013-04-23

    申请号:US11547869

    申请日:2005-03-31

    IPC分类号: C03C15/00

    CPC分类号: H01L21/6708

    摘要: A simple process is disclosed for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports. The ZnO is treated with an etching medium then with a cleaning liquid. The treatment with the etching and cleaning liquids is carried out while the substrate is conveyed through a device. The process is technically simple to implement and makes it possible to regularly and homogeneously roughen and texturize ZnO layers of up to 1 m2. The device for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports has for that purpose a first means for treating the substrate with an etching liquid, a second means for treating the substrate with a cleaning liquid, and another means, in particular transport rollers, for conveying the substrate from the first to the second means.

    摘要翻译: 公开了一种简单的方法来处理在刚性或柔性载体上具有预结构化氧化锌层的基底。 用蚀刻介质然后用清洗液处理ZnO。 在通过设备输送衬底的同时进行用蚀刻和清洁液体的处理。 该工艺在技术上易于实现,并且可以定期均匀地使高达1m 2的ZnO层变粗糙和变形。 用于处理在刚性或柔性载体上具有预结构化氧化锌层的基底的装置为此需要用蚀刻液处理基底的第一装置,用清洗液处理基底的第二装置, 特定传送辊,用于将基板从第一装置传送到第二装置。

    Process and Device for Cleaning and Etching a Substrate Wi
    2.
    发明申请
    Process and Device for Cleaning and Etching a Substrate Wi 失效
    用于清洗和蚀刻基板的工艺和装置

    公开(公告)号:US20080296262A1

    公开(公告)日:2008-12-04

    申请号:US11547869

    申请日:2005-03-31

    IPC分类号: B44C1/22 H01L21/306

    CPC分类号: H01L21/6708

    摘要: A simple process is disclosed for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports. The ZnO is treated with an etching medium then with a cleaning liquid. The treatment with the etching and cleaning liquids is carried out while the substrate is conveyed through a device. The process is technically simple to implement and makes it possible to regularly and homogeneously roughen and texturise ZnO layers of up to 1 m2. The device for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports has for that purpose a first means for treating the substrate with an etching liquid, a second means for treating the substrate with a cleaning liquid, and another means, in particular transport rollers, for conveying the substrate from the first to the second means.

    摘要翻译: 公开了一种简单的方法来处理在刚性或柔性载体上具有预结构化氧化锌层的基底。 用蚀刻介质然后用清洗液处理ZnO。 在通过设备输送基板的同时进行用蚀刻和清洁液体的处理。 该工艺在技术上易于实现,并且可以定期和均匀地粗糙化并且使高达1m 2的ZnO层变形。 用于处理在刚性或柔性载体上具有预结构化氧化锌层的基底的装置为此需要用蚀刻液处理基底的第一装置,用清洗液处理基底的第二装置, 特定传送辊,用于将基板从第一装置传送到第二装置。

    Method of Making Silicon Solar Cells Containing μC Silicon Layers
    3.
    发明申请
    Method of Making Silicon Solar Cells Containing μC Silicon Layers 有权
    制造含有μC硅层的硅太阳能电池的方法

    公开(公告)号:US20080274582A1

    公开(公告)日:2008-11-06

    申请号:US10587131

    申请日:2004-12-16

    IPC分类号: H01L31/18

    摘要: The invention relates to a method for producing solar cells comprising at least one p-i-n layer sequence containing micro-crystalline layers with the aid of a PECVD method. Said method is characterised in that all layers of the p-i-n layer sequence are deposited in a single-chamber process. The electrodes are interspaced at a distance of between 5 and 15 mm and the gas is distributed by means of a shower-head gas inlet, which guarantees a homogeneous distribution of the gas over the substrate. SiH4 gas streams with values of between 0.01 and 3 sccm/cm2 are added with a process pressure of between 8 and 50 hPa. The heater temperature is set at between 50 and 280° C. and the HF output is between 0.2 and 2 watt/cm2. The H2 gas streams have values of between 0.3 and 30 sccm/cm2, in particular between 0.3 and 10 sccm/cm2.

    摘要翻译: 本发明涉及一种用于生产太阳能电池的方法,该方法包括借助于PECVD方法的包含微晶层的至少一个p-i-n层序列。 所述方法的特征在于,将p-i-n层序列的所有层沉积在单室工艺中。 电极间距为5至15毫米,气体通过淋浴头气体入口分布,保证了气体在衬底上的均匀分布。 加入值在介于0.01和3sccm / cm 2之间的SiH 4 H 4气流以8至50hPa的过程压力加入。 加热器温度设定在50和280℃之间,HF输出在0.2和2瓦特/平方厘米之间。 H 2气流的值为0.3至30sccm / cm 2,特别是0.3至10sccm / cm 2之间。

    Method of making silicon solar cells containing μC silicon layers
    4.
    发明授权
    Method of making silicon solar cells containing μC silicon layers 有权
    制造含有μC硅层的硅太阳能电池的方法

    公开(公告)号:US07927907B2

    公开(公告)日:2011-04-19

    申请号:US10587131

    申请日:2004-12-16

    摘要: The invention relates to a method for producing solar cells comprising at least one p-i-n layer sequence containing micro-crystalline layers with the aid of a PECVD method. Said method is characterised in that all layers of the p-i-n layer sequence are deposited in a single-chamber process. The electrodes are interspaced at a distance of between 5 and 15 mm and the gas is distributed by means of a shower-head gas inlet, which guarantees a homogeneous distribution of the gas over the substrate. SiH4 gas streams with values of between 0.01 and 3 sccm/cm2 are added with a process pressure of between 8 and 50 hPa. The heater temperature is set at between 50 and 280° C. and the HF output is between 0.2 and 2 watt/cm2. The H2 gas streams have values of between 0.3 and 30 sccm/cm2, in particular between 0.3 and 10 sccm/cm2.

    摘要翻译: 本发明涉及一种用于生产太阳能电池的方法,该方法包括借助于PECVD方法的包含微晶层的至少一个p-i-n层序列。 所述方法的特征在于,将p-i-n层序列的所有层沉积在单室工艺中。 电极间距为5至15毫米,气体通过淋浴头气体入口分布,保证了气体在衬底上的均匀分布。 加入值在0.01至3sccm / cm2之间的SiH 4气流,处理压力为8至50hPa。 加热器温度设定在50〜280℃之间,HF输出为0.2〜2瓦特/ cm2。 H2气流的值为0.3至30sccm / cm2,特别是0.3至10sccm / cm2。

    SUCTION DEVICE FOR PLASMA COATING CHAMBER
    5.
    发明申请
    SUCTION DEVICE FOR PLASMA COATING CHAMBER 审中-公开
    用于等离子喷涂室的吸附装置

    公开(公告)号:US20090044754A1

    公开(公告)日:2009-02-19

    申请号:US12039342

    申请日:2008-02-28

    IPC分类号: C23C16/54

    摘要: A device is disclosed for supporting a plasma-enhanced coating process. The device is disposed in the vicinity of a plasma and/or a substrate to be coated and/or an electrode provided for plasma generation. The device at least partially surrounds or limits a side or a plane of the plasma area or a plane in which the substrate or a carrying element carrying the substrate can be arranged, or of one of the electrodes or parts. The device comprises a cavity or a suction channel with one or several suction openings through which a gaseous medium can be suctioned off.

    摘要翻译: 公开了用于支持等离子体增强涂覆工艺的装置。 该装置设置在待涂覆的等离子体和/或基底附近和/或用于等离子体产生的电极附近。 该装置至少部分地围绕或限制等离子体区域的侧面或平面,或者可以布置其中可以布置有衬底或承载衬底的承载元件的平面,或者其中一个电极或部分。 该装置包括具有一个或多个抽吸开口的空腔或抽吸通道,气体介质可以通过该抽吸通道被抽出。

    Coating Installation And Gas Piping
    6.
    发明申请
    Coating Installation And Gas Piping 审中-公开
    涂层安装和气体管道

    公开(公告)号:US20080216747A1

    公开(公告)日:2008-09-11

    申请号:US11849524

    申请日:2007-09-04

    IPC分类号: C23C16/00

    CPC分类号: C23C16/45565

    摘要: A coating installation coating installation includes a process chamber and a gas line system for supplying a gas into the process chamber. The gas line system has at least one feed opening for feeding gases into the gas line system and outlet openings for letting the gas out of the gas line system. Lines are each arranged between the feed opening(s) and the outlet openings. The flow resistance of the lines between the at least one feed opening and the outlet openings is essentially equally large. The gas line system has at least one branch point at which a first line section opens into at least three second line sections connected to the first line section. The first and second line sections are arranged in different levels and branch out like a tree structure. The line sections may be milled as a recess and/or depression in plates.

    摘要翻译: 涂装设备涂装设备包括处理室和用于将气体供应到处理室中的气体管线系统。 气体管线系统具有用于将气体输送到气体管线系统中的至少一个进料口和用于使气体从气体管线系统排出的出口。 管线各自布置在进料口和出口之间。 至少一个进料口和出口之间的管线的流动阻力基本相等。 气体管线系统具有至少一个分支点,在该分支点处,第一线路部分通向连接到第一线路段的至少三个第二线路部分。 第一和第二线段布置在不同的层次上,像树结构一样分支。 线段可以作为板中的凹陷和/或凹陷来研磨。

    SEMICONDUCTOR DEVICE MODULE, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE MODULE, SEMICONDUCTOR DEVICE MODULE MANUFACTURING DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE MODULE, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE MODULE, SEMICONDUCTOR DEVICE MODULE MANUFACTURING DEVICE 审中-公开
    半导体器件模块,制造半导体器件模块的方法,半导体器件模块制造器件

    公开(公告)号:US20100314705A1

    公开(公告)日:2010-12-16

    申请号:US12486599

    申请日:2009-06-17

    IPC分类号: H01L31/02 H01L31/18 H01L21/67

    CPC分类号: H01L31/0465 Y02E10/50

    摘要: A semiconductor device module is provided, including a number of n semiconductor devices formed on a substraten being an integer≧2; each semiconductor device having a stack of a first contact layer region, a semiconductor layer region, and a second contact layer region wherein the first contact layer region of each (n−1)th semiconductor device is connected to the second contact layer region of the nth semiconductor device by an interconnection; and wherein, of the first and second contact layer regions, at least the first contact layer region of at least one of the semiconductor devices has a varying thickness, the thickness being maximum at the interconnection.

    摘要翻译: 提供一种半导体器件模块,包括形成在整数≥2的衬底上的n个半导体器件; 每个半导体器件具有第一接触层区域,半导体层区域和第二接触层区域的堆叠,其中第(n-1)个半导体器件的第一接触层区域连接到第 第n个半导体器件通过互连; 并且其中,在所述第一和第二接触层区域中,所述半导体器件中的至少一个半导体器件的至少第一接触层区域具有变化的厚度,所述互连处的厚度最大。

    SCRIBING DEVICE AND METHOD OF PRODUCING A THIN-FILM SOLAR CELL MODULE
    8.
    发明申请
    SCRIBING DEVICE AND METHOD OF PRODUCING A THIN-FILM SOLAR CELL MODULE 审中-公开
    筛选装置和制造薄膜太阳能电池模块的方法

    公开(公告)号:US20100190275A1

    公开(公告)日:2010-07-29

    申请号:US12362281

    申请日:2009-01-29

    摘要: A laser scribing device is provided which comprises at least a laser light source. The laser light source may generate a laser beam for scribing cell lines to form a patterned solar cell module. Furthermore, the laser may emit a light beam for generating a light spot on the surface of the solar cell module. The light beam may be modulated compared with the light beam used for the scribing process. By means of the light spot a particular region of the active area of the solar cell module may be illuminated, and the voltage VOC (L) may be measured at a voltage measurement device. The voltage measurement device is connected between the negative contact area and the positive contact area of the solar cell module. The measured voltage VOC (L) depends on the location of the laser spot on the solar cell module and the intensity of the laser spot.

    摘要翻译: 提供了至少包括激光光源的激光划线装置。 激光光源可以产生用于划线细胞系的激光束以形成图案化的太阳能电池模块。 此外,激光器可以发射用于在太阳能电池模块的表面上产生光斑的光束。 与用于划线过程的光束相比,可以调制光束。 通过光点,可以照射太阳能电池模块的有效区域的特定区域,并且可以在电压测量装置处测量电压VOC(L)。 电压测量装置连接在负极接触区域和太阳能电池模块的正接触区域之间。 测量电压VOC(L)取决于激光光斑在太阳能电池模块上的位置和激光光斑的强度。

    Thin-Film Solar Cell Module
    9.
    发明申请
    Thin-Film Solar Cell Module 审中-公开
    薄膜太阳能电池模块

    公开(公告)号:US20100263719A1

    公开(公告)日:2010-10-21

    申请号:US12425128

    申请日:2009-04-16

    IPC分类号: H01L31/00

    摘要: The invention relates to a thin-film solar cell module (71) in which a layer (72) of TCO is applied on a glass substrate (73). On this layer (72) of TCO is disposed a semiconductor layer (75) on which is applied an electrically conducting backside layer (85). The backside layer (85) includes a bridge element (88) in contact with the layer (72) of TCO. Directly on the layer (72) of TCO are applied busbars (82) by means of a printing method. The busbars (82) are herein connected with the backside layer (85) via the layer (72) of TCO.

    摘要翻译: 本发明涉及一种薄膜太阳能电池模块(71),其中将TCO层(72)施加在玻璃基板(73)上。 在TCO的该层(72)上设置半导体层(75),在其上施加导电背面层(85)。 背面层(85)包括与TCO层(72)接触的桥接元件(88)。 直接在TCO的层(72)上通过打印方式施加汇流条(82)。 汇流条(82)在此通过TCO的层(72)与背侧层(85)连接。

    SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING A SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING A SEMICONDUCTOR DEVICE 审中-公开
    半导体器件和半导体器件的制造方法

    公开(公告)号:US20100139753A1

    公开(公告)日:2010-06-10

    申请号:US12329313

    申请日:2008-12-05

    IPC分类号: H01L31/00 H01L31/0232

    摘要: A solar cell module comprises a transparent substrate, e.g., a glass substrate. On top of the glass substrate a layer system is deposited. The layer system comprises a front electrode which may be a transparent conductive oxide (TCO) layer. Furthermore, the layer system comprises a thin film semiconductor layer deposited on the front electrode layer. A back electrode is formed on the thin film semiconductor layer which includes a very thin metal layer having a thickness d smaller than 50 nm. A Lambertian reflective layer is deposited on the thin metal layer in order to reflect light transmitted through the metal layer.

    摘要翻译: 太阳能电池模块包括透明基板,例如玻璃基板。 在玻璃基板的顶部沉积层系统。 层系统包括可以是透明导电氧化物(TCO)层的前电极。 此外,层系统包括沉积在前电极层上的薄膜半导体层。 背面电极形成在薄膜半导体层上,该薄膜半导体层包括厚度d小于50nm的非常薄的金属层。 朗伯反射层沉积在薄金属层上以反射透过金属层的光。