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    SEMICONDUCTOR NANOSTRUCTURES, SEMICONDUCTOR DEVICES, AND METHODS OF MAKING SAME
    2.
    发明申请
    SEMICONDUCTOR NANOSTRUCTURES, SEMICONDUCTOR DEVICES, AND METHODS OF MAKING SAME 有权
    SEMICONDUCTOR NANOSTRUCTURES，SEMICONDUCTOR DEVICES，AND METHODS OF MAKING SAME

    公开(公告)号：US20110201163A1

    公开(公告)日：2011-08-18

    申请号：US13041740

    申请日：2011-03-07

    申请人： Joerg Appenzeller ,  Supratik Guha ,  Emanuel Tutuc

    发明人： Joerg Appenzeller ,  Supratik Guha ,  Emanuel Tutuc

    IPC分类号： H01L21/336 ,  H01L21/20

    CPC分类号： H01L21/30604 ,  B82Y10/00 ,  H01L21/02603 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1041 ,  H01L29/125 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/78696

    摘要： A semiconductor structure is provided, which includes multiple sections arranged along a longitudinal axis. Preferably, the semiconductor structure comprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor core having a first dopant concentration preferably extends along the longitudinal axis through the middle section and the two terminal sections. A semiconductor shell having a second, higher dopant concentration preferably encircles a portion of the semiconductor core at the two terminal sections, but not at the middle section, of the semiconductor structure. It is particularly preferred that the semiconductor structure is a nanostructure having a cross-sectional dimension of not more than 100 nm.

    摘要翻译： 提供了一种半导体结构，其包括沿纵向轴线布置的多个部分。 优选地，半导体结构包括位于中间部分的相对端的中间部分和两个端子部分。 具有第一掺杂剂浓度的半导体芯片优选地沿着纵向轴线延伸通过中间部分和两个端子部分。 具有第二较高掺杂剂浓度的半导体壳体优选地环绕半导体结构的两个端子部分但不在中间部分处的半导体芯体的一部分。 特别优选的是，半导体结构是具有不大于100nm的横截面尺寸的纳米结构。

    SEMICONDUCTOR NANOSTRUCTURES, SEMICONDUCTOR DEVICES, AND METHODS OF MAKING SAME
    4.
    发明申请
    SEMICONDUCTOR NANOSTRUCTURES, SEMICONDUCTOR DEVICES, AND METHODS OF MAKING SAME 有权
    SEMICONDUCTOR NANOSTRUCTURES，SEMICONDUCTOR DEVICES，AND METHODS OF MAKING SAME

    公开(公告)号：US20080169503A1

    公开(公告)日：2008-07-17

    申请号：US11622358

    申请日：2007-01-11

    申请人： Joerg Appenzeller ,  Supratik Guha ,  Emanuel Tutuc

    发明人： Joerg Appenzeller ,  Supratik Guha ,  Emanuel Tutuc

    IPC分类号： H01L29/78 ,  H01L21/04

    CPC分类号： H01L21/30604 ,  B82Y10/00 ,  H01L21/02603 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1041 ,  H01L29/125 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/78696

    摘要： A semiconductor structure is provided, which includes multiple sections arranged along a longitudinal axis. Preferably, the semiconductor structure comprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor core having a first dopant concentration preferably extends along the longitudinal axis through the middle section and the two terminal sections. A semiconductor shell having a second, higher dopant concentration preferably encircles a portion of the terminal sections, but not at the middle section, of the semiconductor structure. It is particularly preferred that the semiconductor structure is a nanostructure having a cross-sectional dimension of not more than 100 nm.

    摘要翻译： 提供了一种半导体结构，其包括沿纵向轴线布置的多个部分。 优选地，半导体结构包括位于中间部分的相对端的中间部分和两个端子部分。 具有第一掺杂剂浓度的半导体芯片优选地沿着纵向轴线延伸通过中间部分和两个端子部分。 具有第二较高掺杂剂浓度的半导体壳体优选地环绕半导体结构的端子部分的一部分而不是中间部分。 特别优选的是，半导体结构是具有不大于100nm的横截面尺寸的纳米结构。

    Semiconductor nanostructures, semiconductor devices, and methods of making same
    5.
    发明授权
    Semiconductor nanostructures, semiconductor devices, and methods of making same 有权
    半导体纳米结构，半导体器件及其制造方法

    公开(公告)号：US08362582B2

    公开(公告)日：2013-01-29

    申请号：US13041754

    申请日：2011-03-07

    申请人： Joerg Appenzeller ,  Supratik Guha ,  Emanuel Tutuc

    发明人： Joerg Appenzeller ,  Supratik Guha ,  Emanuel Tutuc

    IPC分类号： H01L31/058

    CPC分类号： H01L21/30604 ,  B82Y10/00 ,  H01L21/02603 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1041 ,  H01L29/125 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/78696

    摘要： A semiconductor structure is provided, which includes multiple sections arranged along a longitudinal axis. Preferably, the semiconductor structure comprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor core having a first dopant concentration preferably extends along the longitudinal axis through the middle section and the two terminal sections. A semiconductor shell having a second, higher dopant concentration preferably encircles a portion of the semiconductor core at the two terminal sections, but not at the middle section, of the semiconductor structure. It is particularly preferred that the semiconductor structure is a nanostructure having a cross-sectional dimension of not more than 100 nm.

    摘要翻译： 提供了一种半导体结构，其包括沿纵向轴线布置的多个部分。 优选地，半导体结构包括位于中间部分的相对端的中间部分和两个端子部分。 具有第一掺杂剂浓度的半导体芯片优选地沿着纵向轴线延伸通过中间部分和两个端子部分。 具有第二较高掺杂剂浓度的半导体壳体优选地环绕半导体结构的两个端子部分但不在中间部分处的半导体芯体的一部分。 特别优选的是，半导体结构是具有不大于100nm的横截面尺寸的纳米结构。

    Core-shell nanowire transistor
    6.
    发明授权
    Core-shell nanowire transistor 有权
    核壳纳米线晶体管

    公开(公告)号：US07948050B2

    公开(公告)日：2011-05-24

    申请号：US11622358

    申请日：2007-01-11

    申请人： Joerg Appenzeller ,  Supratik Guha ,  Emanuel Tutuc

    发明人： Joerg Appenzeller ,  Supratik Guha ,  Emanuel Tutuc

    IPC分类号： H01L31/06

    CPC分类号： H01L21/30604 ,  B82Y10/00 ,  H01L21/02603 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1041 ,  H01L29/125 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/78696

    摘要： A semiconductor structure is provided, which includes multiple sections arranged along a longitudinal axis. Preferably, the semiconductor structure comprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor core having a first dopant concentration preferably extends along the longitudinal axis through the middle section and the two terminal sections. A semiconductor shell having a second, higher dopant concentration preferably encircles a portion of the semiconductor core at the two terminal sections, but not at the middle section, of the semiconductor structure. It is particularly preferred that the semiconductor structure is a nanostructure having a cross-sectional dimension of not more than 100 nm.

    摘要翻译： 提供了一种半导体结构，其包括沿纵向轴线布置的多个部分。 优选地，半导体结构包括位于中间部分的相对端的中间部分和两个端子部分。 具有第一掺杂剂浓度的半导体芯片优选地沿着纵向轴线延伸通过中间部分和两个端子部分。 具有第二较高掺杂剂浓度的半导体壳体优选地环绕半导体结构的两个端子部分但不在中间部分处的半导体芯体的一部分。 特别优选的是，半导体结构是具有不大于100nm的横截面尺寸的纳米结构。

    Techniques for Use of Nanotechnology in Photovoltaics
    9.
    发明申请
    Techniques for Use of Nanotechnology in Photovoltaics 有权
    在光伏领域使用纳米技术的技术

    公开(公告)号：US20100108131A1

    公开(公告)日：2010-05-06

    申请号：US12544066

    申请日：2009-08-19

    申请人： Supratik Guha ,  Hendrik F. Hamann ,  Emanuel Tutuc

    发明人： Supratik Guha ,  Hendrik F. Hamann ,  Emanuel Tutuc

    IPC分类号： H01L31/0352

    CPC分类号： H01L31/03529 ,  H01L31/035227 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S977/743 ,  Y10S977/813 ,  Y10S977/827 ,  Y10S977/936 ,  Y10S977/938

    摘要： Techniques for combining nanotechnology with photovoltaics are provided. In one aspect, a method of forming a photovoltaic device is provided comprising the following steps. A plurality of nanowires are formed on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest. In the presence of a first doping agent and a first volatile precursor, a first doped semiconductor layer is conformally deposited over the nanowire forest. In the presence of a second doping agent and a second volatile precursor, a second doped semiconductor layer is conformally deposited over the first doped layer. The first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent. A transparent electrode layer is deposited over the second doped semiconductor layer.

    摘要翻译： 提供了将纳米技术与光伏组合相结合的技术。 一方面，提供一种形成光伏器件的方法，包括以下步骤。 在衬底上形成多个纳米线，其中附着到衬底的多个纳米线包括纳米线森林。 在第一掺杂剂和第一挥发性前体的存在下，第一掺杂半导体层共形沉积在纳米线森林上。 在第二掺杂剂和第二挥发性前体的存在下，第二掺杂半导体层共形沉积在第一掺杂层上。 第一掺杂剂包括n型掺杂剂和p型掺杂剂中的一种，第二掺杂剂包括来自第一掺杂剂的n型掺杂剂和p型掺杂剂中的不同的掺杂剂。 在第二掺杂半导体层上沉积透明电极层。