摘要:
A method for making a semiconductor device structure, includes: providing a substrate; forming on the substrate a first gate with first spacers, a second gate with second spacers, respective source and drain regions of a same conductive type adjacent to the first gate and the second gate, an isolation region disposed intermediate of the first gate and the second gate, silicides on the first gate, the second gate and respective source and drain regions; forming additional spacers on the first spacers to produce an intermediate structure, and then disposing a stress layer over the entire intermediate structure.
摘要:
A method for making a semiconductor device structure, includes: providing a substrate; forming on the substrate a first gate with first spacers, a second gate with second spacers, respective source and drain regions of a same conductive type adjacent to the first gate and the second gate, an isolation region disposed intermediate of the first gate and the second gate, silicides on the first gate, the second gate and respective source and drain regions; forming additional spacers on the first spacers to produce an intermediate structure, and then disposing a stress layer over the entire intermediate structure.
摘要:
Polysilicon etching methods are disclosed that employ a gas flow including perfluorocyclopentene (C5F8) and nitrogen trifluoride (NF3). The etching methods achieved a substantially vertical profile and smoother surfaces, and may achieve a 3sigma variation as low as 3.0 nm.
摘要翻译:公开了采用包括全氟环戊烯(C 5 H 5 F 8 N)和三氟化氮(NF 3 3))的气流的多晶硅蚀刻方法。 蚀刻方法实现了基本垂直的轮廓和更平滑的表面,并且可以实现低至3.0nm的3σ变化。
摘要:
A plasma etching system having a wafer chuck with a magnet that applies a magnetic field over a wafer to shield the wafer from charged particles. The magnetic field is parallel with the wafer, and is strongest near the wafer surface. The magnetic field may be straight, or circular. In operation, electrons are deflected from the wafer by the Lorentz force, the wafer acquires a positive charge, and ions are deflected by electrostatic repulsion. Neutral species are allowed through the magnetic field, and they collide with the wafer. Neutral species generally provide more isotropic and material-selective etching than charged particles, so the present magnetic field tends to increase etch isotropy and material selectivity. Also, the magnetic field can protect the wafer from seasoning processes designed to clean unwanted films from the chamber surface as seasoning processes typically rely on etching by charged particles.
摘要:
A plasma etching system having a wafer chuck with a magnet that applies a magnetic field over a wafer to shield the wafer from charged particles. The magnetic field is parallel with the wafer, and is strongest near the wafer surface. The magnetic field may be straight, or circular. In operation, electrons are deflected from the wafer by the Lorentz force, the wafer acquires a positive charge, and ions are deflected by electrostatic repulsion. Neutral species are allowed through the magnetic field, and they collide with the wafer. Neutral species generally provide more isotropic and material-selective etching than charged particles, so the present magnetic field tends to increase etch isotropy and material selectivity. Also, the magnetic field can protect the wafer from seasoning processes designed to clean unwanted films from the chamber surface as seasoning processes typically rely on etching by charged particles.
摘要:
Photoelectron emissions are used to detect an endpoint of a thickness alteration of a topmost layer in a set of layers undergoing patterning. The set of layers are irradiated, which causes an emission of photoelectrons. Upon receipt of or absence of a photoelectron emission, patterning endpoint is detected.
摘要:
Methods of etching silicon nitride material, and more particularly, etching nitride selective to silicon dioxide or silicide, are disclosed. The methods include exposing a substrate having silicon nitride thereon to a plasma including at least one fluorohydrocarbon and a non-carbon containing fluorine source such as sulfur hexafluoride (SF6). The plasma may also include oxygen (O2) and the fluorohydrocarbons may include at least one of: trifluoromethane (CHF3), difluoromethane (CH2F2), and methyl fluoride (CH3F). In an alternative embodiment, the plasma includes one of hydrogen (H2) and nitrogen trifluoride (NF3) and one of tetrafluoromethane (CF4) and octafluorocyclobutane (C4F8). The methods are preferably carried out using a low bias voltage, e.g.
摘要翻译:公开了蚀刻氮化硅材料的方法,更具体地说,蚀刻对二氧化硅或硅化物有选择性的氮化物。 所述方法包括将其上具有氮化硅的衬底暴露于包括至少一种氟代烃和不含碳的氟源如六氟化硫(SF 6 N 6)的等离子体。 等离子体还可以包括氧(O 2 H 2),并且氟代烃可以包括以下中的至少一种:三氟甲烷(CHF 3 N 3),二氟甲烷(CH 2 N 2) > F 2)和氟化氟(CH 3 N 3 F)。 在替代实施方案中,等离子体包括氢(H 2 H 2)和三氟化氮(NF 3 N)之一和四氟甲烷(CF 3 SO 3) )和八氟环丁烷(C 4 H 8 F 8)。 该方法优选使用低偏置电压进行,例如, <100 V.
摘要:
A method for implementing a temperature cycling operation for a biochemical sample to be reacted includes applying an infrared (IR) heating source to the sample at a first infrared wavelength selected so as to generate a first desired temperature for a first duration and produce a first desired reaction within the sample. Following the first desired reaction, applying the infrared (IR) heating source to the sample at a second infrared wavelength selected so as to generate a second desired temperature for a second duration and produce a second desired reaction within the sample.
摘要:
A method for implementing a temperature cycling operation for a biochemical sample to be reacted includes applying an infrared (IR) heating source to the sample at a first infrared wavelength selected so as to generate a first desired temperature for a first duration and produce a first desired reaction within the sample. Following the first desired reaction, applying the infrared (IR) heating source to the sample at a second infrared wavelength selected so as to generate a second desired temperature for a second duration and produce a second desired reaction within the sample.
摘要:
A method is disclosed for improving etch uniformity in deep silicon etching of a monocrystalline silicon wafer. Such method includes forming a pad dielectric layer on a wafer including monocrystalline silicon, forming a silicon layer over the pad dielectric layer, and then applying a clamp to an edge of the wafer. The silicon layer is then removed except in areas protected by the clamp. Thereafter, a hardmask layer is applied and patterned on the wafer; and the wafer is then directionally etched with the patterned hardmask to etch trenches in the monocrystalline silicon. In such manner, a source of silicon (in the silicon layer) is provided at the wafer edge, such that the silicon loading is improved. In addition, the silicon layer at the wafer edge forms a blocking layer which prevents formation of black silicon.