摘要:
The present disclosure provides electrode structures and integrated electrode structures having one or more conductive materials coextruded with one or more dielectric materials. The disclosed electrode structures can be configured for use as analyte sensors. Also provided, are methods of making and using the electrode structures and integrated electrode structures described herein.
摘要:
The present disclosure provides electrode structures and integrated electrode structures having one or more conductive materials coextruded with one or more dielectric materials. The disclosed electrode structures can be configured for use as analyte sensors. Also provided, are methods of making and using the electrode structures and integrated electrode structures described herein.
摘要:
A system, method, and computer readable medium are disclosed for re-sizing input fields and text of a user interface displayed within a touch-sensitive screen. The user interface comprises an initial view with at least one input field. The user interface is provided for display on the screen. A touch interaction is detected on the screen, and it is determined whether the interaction is within a predefined area of an input field. Responsive to determining that the interaction is within the predefined area, a magnified view of the input field is generated. The magnified view increases the proportion of the screen filled by the input field and text relative to the initial view. The magnified view is then presented for display on the screen.
摘要:
Embodiments of the present invention disclose a method and system for populating location-based information on a portable electronic device. According to one embodiment, a request to create a memory record on the portable electronic device is received from a user. Based on the geographic location of the portable electronic device, relevant location information associated with a plurality of reference fields of the memory record are determined and displayed on the portable electronic device.
摘要:
A negative pressure valve assembly is provided. The valve assembly comprises a valve port assembly comprising a port and a flange substantially surrounding the port, a valve comprising a plate adapted to substantially cover the port, the plate comprising a minor edge, a major edge having a major edge length, and a plate biasing assembly stop located at a first position along the major edge, the first position more than 50% of the major edge length as measured from the minor edge. The valve assembly further comprises a hinge coupled to the plate, the hinge adapted to couple the plate to the flange, and first plate biasing assembly adapted to couple to the valve port assembly and to bias the plate towards the valve port assembly, the first plate biasing assembly comprising a resilient member adapted to contact the stop plate.
摘要:
High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC. In one embodiment, SiC pillars are formed of n-type SiC. P type dopant, such as boron is obtained by annealing a borosilicate glass boron source formed on the SiC. The glass is then removed. In further embodiments, a dopant may be implanted, coated by glass, and then annealed. The doping results in shallow planar junctions in SiC.
摘要:
Increasing the number of successive pulses of oxidant before applying pulses of metal precursor may improve the quality of the resulting metal or rare earth oxide films. These metal or rare earth oxide films may be utilized for high dielectric constant gate dielectrics. In addition, pulsing the oxidant during the pre-stabilization period may be advantageous. Also, using more pulses of oxidant than the pulses of precursor may reduce chlorine concentration in the resulting films.
摘要:
Embodiments of the invention provide methods of reducing electroplating defects by adjusting immersion conditions. For one embodiment, the immersion conditions are adjusted based upon characteristics of the substrate, including feature size. Additionally or alternatively, the immersion conditions may be adjusted based upon aspects of the electroplating process, including motion of the substrate upon immersion. Immersion conditions that may be adjusted in accordance with various embodiments of the invention include entry bias voltage/current, vertical immersion speed, and angle of immersion.
摘要:
A semiconductor device and a method for forming it are described. The semiconductor device comprises a metal NMOS gate electrode that is formed on a first part of a substrate, and a silicide PMOS gate electrode that is formed on a second part of the substrate.
摘要:
A keyboard/video/mouse (KVM) switching protocol is disclosed in which KVM information is applied to a network of workstations. At least one data converter communicates on the workstation network and retrieves KVM information from the workstation network that is addressed to a server assigned to the converter. The converter places the KVM information in a format suitable to the assigned server and applies the converted KVM information to the appropriate standard device ports of the server. The system provides motherboard access to the servers that is characteristics of KVM switches but provides essentially unlimited scalability not known in traditional KVM switches.