摘要:
A system for testing a collection of device chips by temporarily attaching them to a carrier having a plurality of receptacles with microdendritic features; the receptacles matching with and pushed in contact with a matching set of contact pads on the device chips; said carrier additionally having test pads connected to the receptacles through interconnect wiring. The system allows connecting the chips together and testing the collection as a whole by probing the test pads on the carrier. Burn-in of the collection of chips can also be performed on the temporary carrier, which is reusable.
摘要:
An apparatus for simultaneously testing or burning in a large number of the integrated circuit chips on a product wafer includes probes mounted on a first board and tester chips mounted on a second board, there being electrical connectors connecting the two boards. The tester chips are for distributing power to the product chips or for testing the product chips. The probes and thin film wiring to which they are attached are personalized for the pad footprint of the particular wafer being probed. The base of the first board and the second board both remain the same for all wafers in a product family. The use of two boards provides that the tester chip is kept at a substantially lower temperature than the product chips during burning to extend the lifetime of tester chips. A gap can be used as thermal insulation between the boards, and the gap sealed and evacuated for further thermal insulation. Evacuation also provides atmospheric pressure augmentation of contact for connection between boards and contact to wafer. Probes for parallel testing of chips are arranged in crescent shaped stripes to significantly increase tester throughput as compared with probes arranged in an area array.
摘要:
The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of recitfying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.