摘要:
A system having an optomechanical gyroscope device. An optomechanical disk acts as an optical ring resonator and a mechanical disk resonator. A drive laser generates an optical drive signal. A drive channel acts as a waveguide for the optical drive signal and includes drive electrodes in a first proximity with respect to the optomechanical disk. The drive electrodes to excite the ring by evanescent coupling. A drive photodetector is configured to receive an output optical signal from the drive channel. A sense laser generates a optical sense signal. A sense channel acts as a waveguide for the optical sense signal and includes sense electrodes in a second proximity with respect to the optomechanical disk. A sense photodetector is configured to receive an output optical signal from the sense channel.
摘要:
A system having an optomechanical gyroscope device. An optomechanical disk acts as an optical ring resonator and a mechanical disk resonator. A drive laser generates an optical drive signal. A drive channel acts as a waveguide for the optical drive signal and includes drive electrodes in a first proximity with respect to the optomechanical disk. The drive electrodes to excite the ring by evanescent coupling. A drive photodetector is configured to receive an output optical signal from the drive channel. A sense laser generates a optical sense signal. A sense channel acts as a waveguide for the optical sense signal and includes sense electrodes in a second proximity with respect to the optomechanical disk. A sense photodetector is configured to receive an output optical signal from the sense channel.
摘要:
Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.
摘要:
Inverted 45° semiconductor mirrors as vertical optical couplers for PIC chips, particularly optical receivers and transmitters. An inverted 45° semiconductor mirror functions to couple light between a plane in the PIC chip defined by thin film layers and a direction normal to a top surface of the PIC chip where it may be generated or collected by an off-chip component, such as a wire terminal. In an exemplary embodiment, a (110) plane of a cubic crystalline semiconductor may provide a 45° facet inverted relative to a (100) surface of the semiconductor from which light is to be emitted. In further embodiments, a (110) plane may be exposed by undercutting a device layer of a semiconductor on insulator (SOI) substrate. Alternatively, a pre-etched substrate surface may be bonded to a handling wafer, thinned, and then utilized for PIC waveguide formation.
摘要:
Apparatuses, methods and storage medium associated with an optical iso-modulator are disclosed herein. In embodiments, an apparatus may include an optical waveguide formed on one or more layers, such as an isolation layer and a handling layer. A modulator driver may be coupled to a first side of the one or more layers. A magneto-optical (MO) die may be coupled to a second side of the one or more layers that is opposite the first side. Other embodiments may be disclosed and/or claimed.
摘要:
A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.
摘要:
Embodiments include apparatuses, methods, and systems including a laser device having a 1×3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.
摘要:
Embodiments of the invention use crystallographic etching of SOI wafers with a (110)-oriented epi layer to form both the vertical input facet and the re-entrant mirror. Proposed layout design combined with proposed orientation of the epi enables both vertical facets and re-entrant (upward-reflecting) mirror facets to be made in a single wafer-level wet etch process.
摘要:
Embodiments may include or relate to an optical coupler. The optical coupler may include a silicon nitride (SiN) waveguide. The waveguide may be formed by placing SiN on an epitaxially grown silicon structure that is then removed subsequent to placement of the SiN. Other embodiments may be described and/or claimed.
摘要:
Embodiments include apparatuses, methods, and systems including a laser device having a 1×3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.