公开(公告)号：US20190324210A1

公开(公告)日：2019-10-24

申请号：US16457483

申请日：2019-06-28

申请人： Meer Nazmus Sakib ,  Guan-Lin Su ,  John Heck ,  Haisheng Rong ,  Ming C. Wu

发明人： Meer Nazmus Sakib ,  Guan-Lin Su ,  John Heck ,  Haisheng Rong ,  Ming C. Wu

IPC分类号： G02B6/28 ,  H01S5/14 ,  H01S5/40 ,  G02B6/12 ,  H01S3/108

摘要： Embodiments include apparatuses, methods, and systems including a laser device having a 1×3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.

公开(公告)号：US11143818B2

公开(公告)日：2021-10-12

申请号：US16457483

申请日：2019-06-28

申请人： Meer Nazmus Sakib ,  Guan-Lin Su ,  John Heck ,  Haisheng Rong ,  Ming C. Wu

发明人： Meer Nazmus Sakib ,  Guan-Lin Su ,  John Heck ,  Haisheng Rong ,  Ming C. Wu

IPC分类号： G02B6/28 ,  H01S5/40 ,  G02B6/12 ,  H01S5/14 ,  H01S3/108 ,  H01S5/10

摘要： Embodiments include apparatuses, methods, and systems including a laser device having a 1×3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.

公开(公告)号：US20210119710A1

公开(公告)日：2021-04-22

申请号：US17133360

申请日：2020-12-23

申请人： Meer Nazmus Sakib ,  Peicheng Liao ,  Ranjeet Kumar ,  Duanni Huang ,  Haisheng Rong ,  Harel Frish ,  John Heck ,  Chaoxuan Ma ,  Hao Li ,  Ganesh Balamurugan

发明人： Meer Nazmus Sakib ,  Peicheng Liao ,  Ranjeet Kumar ,  Duanni Huang ,  Haisheng Rong ,  Harel Frish ,  John Heck ,  Chaoxuan Ma ,  Hao Li ,  Ganesh Balamurugan

IPC分类号： H04B10/61

摘要： Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.

公开(公告)号：US09791641B2

公开(公告)日：2017-10-17

申请号：US14884430

申请日：2015-10-15

申请人： John Heck ,  Haisheng Rong

发明人： John Heck ,  Haisheng Rong

IPC分类号： G02B6/12 ,  H01L21/00 ,  G02B6/26 ,  H01L21/306 ,  G02B6/42 ,  G02B6/122 ,  G02B6/136

CPC分类号： G02B6/4214 ,  G02B6/122 ,  G02B6/136 ,  G02B6/26 ,  G02B6/42 ,  G02B6/4208 ,  G02B2006/12104 ,  H01L21/30604

摘要： Inverted 45° semiconductor mirrors as vertical optical couplers for PIC chips, particularly optical receivers and transmitters. An inverted 45° semiconductor mirror functions to couple light between a plane in the PIC chip defined by thin film layers and a direction normal to a top surface of the PIC chip where it may be generated or collected by an off-chip component, such as a wire terminal. In an exemplary embodiment, a (110) plane of a cubic crystalline semiconductor may provide a 45° facet inverted relative to a (100) surface of the semiconductor from which light is to be emitted. In further embodiments, a (110) plane may be exposed by undercutting a device layer of a semiconductor on insulator (SOI) substrate. Alternatively, a pre-etched substrate surface may be bonded to a handling wafer, thinned, and then utilized for PIC waveguide formation.

公开(公告)号：US20180059446A1

公开(公告)日：2018-03-01

申请号：US15250745

申请日：2016-08-29

申请人： Woosung Kim ,  John Heck ,  Haisheng Rong ,  Jeffrey B. Driscoll ,  Kimchau N. Nguyen

发明人： Woosung Kim ,  John Heck ,  Haisheng Rong ,  Jeffrey B. Driscoll ,  Kimchau N. Nguyen

IPC分类号： G02F1/095 ,  G02B6/12 ,  G02F1/09 ,  G02F1/00

CPC分类号： G02F1/0955 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/125 ,  G02B6/126 ,  G02B6/30 ,  G02F1/0036 ,  G02F1/092

摘要： Apparatuses, methods and storage medium associated with an optical iso-modulator are disclosed herein. In embodiments, an apparatus may include an optical waveguide formed on one or more layers, such as an isolation layer and a handling layer. A modulator driver may be coupled to a first side of the one or more layers. A magneto-optical (MO) die may be coupled to a second side of the one or more layers that is opposite the first side. Other embodiments may be disclosed and/or claimed.

公开(公告)号：US20110073972A1

公开(公告)日：2011-03-31

申请号：US12567601

申请日：2009-09-25

申请人： John Heck ,  Ansheng Liu ,  Michael T. Morse ,  Haisheng Rong

发明人： John Heck ,  Ansheng Liu ,  Michael T. Morse ,  Haisheng Rong

IPC分类号： H01L31/0232 ,  H01L21/306

CPC分类号： H01L31/02327 ,  G02B6/4214

摘要： A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.

摘要翻译： 垂直全内反射（TIR）镜及其制造是通过使用晶体硅蚀刻创建入门轮廓而制成的。 从SOI晶片开始，使用深硅蚀刻来暴露掩埋氧化物层，然后将其湿法蚀刻（在HF中），打开Si器件层的底表面。 然后将该底部硅表面暴露，使得在晶体刻蚀中，所得到的形状是具有刻面的重入梯形。这些刻面可以与平面硅波导结合使用以基于TIR原理向上反射光。 或者，光可以从晶片上方耦合到硅波导中，用于晶片级测试。

公开(公告)号：US09482535B2

公开(公告)日：2016-11-01

申请号：US13996669

申请日：2011-12-23

申请人： John Heck ,  Haisheng Rong ,  Richard Jones

发明人： John Heck ,  Haisheng Rong ,  Richard Jones

IPC分类号： G01C19/66 ,  G01C19/5684

CPC分类号： G01C19/661 ,  G01C19/5684

摘要： A system having an optomechanical gyroscope device. An optomechanical disk acts as an optical ring resonator and a mechanical disk resonator. A drive laser generates an optical drive signal. A drive channel acts as a waveguide for the optical drive signal and includes drive electrodes in a first proximity with respect to the optomechanical disk. The drive electrodes to excite the ring by evanescent coupling. A drive photodetector is configured to receive an output optical signal from the drive channel. A sense laser generates a optical sense signal. A sense channel acts as a waveguide for the optical sense signal and includes sense electrodes in a second proximity with respect to the optomechanical disk. A sense photodetector is configured to receive an output optical signal from the sense channel.

摘要翻译： 具有光学陀螺仪装置的系统。 光学机械盘用作光环谐振器和机械盘谐振器。 驱动激光器产生光驱动信号。 驱动通道用作用于光驱动信号的波导，并且包括相对于机电盘第一接近的驱动电极。 驱动电极通过ev逝耦合激发环。 驱动光电检测器被配置为从驱动通道接收输出光信号。 感测激光产生光学感测信号。 感测通道用作光学感测信号的波导，并且包括相对于光学机械盘的第二接近度的感测电极。 感测光电检测器被配置为从感测通道接收输出光信号。

公开(公告)号：US20130293898A1

公开(公告)日：2013-11-07

申请号：US13996669

申请日：2011-12-23

申请人： John Heck ,  Haisheng Rong ,  Richard Jones

发明人： John Heck ,  Haisheng Rong ,  Richard Jones

IPC分类号： G01C19/66

CPC分类号： G01C19/661 ,  G01C19/5684

摘要： A system having an optomechanical gyroscope device. An optomechanical disk acts as an optical ring resonator and a mechanical disk resonator. A drive laser generates an optical drive signal. A drive channel acts as a waveguide for the optical drive signal and includes drive electrodes in a first proximity with respect to the optomechanical disk. The drive electrodes to excite the ring by evanescent coupling. A drive photodetector is configured to receive an output optical signal from the drive channel. A sense laser generates a optical sense signal. A sense channel acts as a waveguide for the optical sense signal and includes sense electrodes in a second proximity with respect to the optomechanical disk. A sense photodetector is configured to receive an output optical signal from the sense channel.

摘要翻译： 具有光学陀螺仪装置的系统。 光学机械盘用作光环谐振器和机械盘谐振器。 驱动激光器产生光驱动信号。 驱动通道用作用于光驱动信号的波导，并且包括相对于机电盘第一接近的驱动电极。 驱动电极通过ev逝耦合激发环。 驱动光电检测器被配置为从驱动通道接收输出光信号。 感测激光产生光学感测信号。 感测通道用作光学感测信号的波导，并且包括相对于光学机械盘的第二接近度的感测电极。 感测光电检测器被配置为从感测通道接收输出光信号。

公开(公告)号：US20120155820A1

公开(公告)日：2012-06-21

申请号：US12973585

申请日：2010-12-20

申请人： John Heck ,  Haisheng Rong

发明人： John Heck ,  Haisheng Rong

IPC分类号： G02B6/10

CPC分类号： G02B6/4214 ,  G02B6/12004 ,  G02B6/132

摘要： Embodiments of the invention use crystallographic etching of SOI wafers with a (110)-oriented epi layer to form both the vertical input facet and the re-entrant mirror. Proposed layout design combined with proposed orientation of the epi enables both vertical facets and re-entrant (upward-reflecting) mirror facets to be made in a single wafer-level wet etch process.

摘要翻译： 本发明的实施例使用具有（110）取向的外延层的SOI晶片的晶体学蚀刻以形成垂直输入面和入射镜。 拟议的布局设计结合提出的epi取向，可以在单晶片级湿法蚀刻工艺中制造垂直刻面和重入（向上反射）镜面。

公开(公告)号：US20230020440A1

公开(公告)日：2023-01-19

申请号：US17955378

申请日：2022-09-28

申请人： John Heck ,  Harel Frish ,  Hari Mahalingam ,  Haisheng Rong

发明人： John Heck ,  Harel Frish ,  Hari Mahalingam ,  Haisheng Rong

IPC分类号： G02B6/30

摘要： Embodiments may include or relate to an optical coupler. The optical coupler may include a silicon nitride (SiN) waveguide. The waveguide may be formed by placing SiN on an epitaxially grown silicon structure that is then removed subsequent to placement of the SiN. Other embodiments may be described and/or claimed.