公开(公告)号：US4555301A

公开(公告)日：1985-11-26

申请号：US506069

申请日：1983-06-20

申请人： John M. Gibson ,  Dale C. Jacobson ,  John M. Poate ,  Raymond T. Tung

发明人： John M. Gibson ,  Dale C. Jacobson ,  John M. Poate ,  Raymond T. Tung

IPC分类号： C30B1/02 ,  C30B11/00 ,  C30B11/02 ,  C30B13/00 ,  C30B13/24 ,  C30B23/00 ,  C30B33/00 ,  C30B33/06 ,  H01L21/208 ,  H01L21/285 ,  C30B1/08

CPC分类号： H01L21/28518 ,  C30B11/00 ,  C30B13/00 ,  C30B13/24 ,  C30B29/10 ,  C30B29/60 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S148/14

摘要： A method for forming heterostructures comprising multiconstituent epitaxial material, on a substrate comprises formation of a layer of "precursor" material on the substrate, and momentarily melting the precursor material by pulsed irradiation. The precursor material has the same major chemical constituents as the multiconstituent material to be formed, albeit not necessarily in the same proportions. In at least some systems (e.g., nickel or cobalt silicides on Si), solid state annealing of the re-solidified material often improves substantially the quality of the epitaxial material formed, resulting in substantially defect-free, substantially monocrystalline, material. An exemplary application of the inventive method is the formation of single crystal epitaxial NiSi.sub.2 on Si(100).

摘要翻译： 一种用于在衬底上形成包含多取向外延材料的异质结构的方法包括在衬底上形成“前体”层的材料，并通过脉冲照射瞬时熔融前体材料。 前体材料具有与待形成的多成分材料相同的主要化学成分，尽管不一定是相同的比例。 在至少一些系统（例如，Si上的镍或钴硅化物）中，再固化材料的固态退火常常改善所形成的外延材料的质量，导致基本上无缺陷的基本单晶材料。 本发明方法的示例性应用是在Si（100）上形成单晶外延NiSi 2。

公开(公告)号：US4477308A

公开(公告)日：1984-10-16

申请号：US429291

申请日：1982-09-30

申请人： John M. Gibson ,  John M. Poate ,  Raymond T. Tung

发明人： John M. Gibson ,  John M. Poate ,  Raymond T. Tung

IPC分类号： C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  H01L21/203 ,  H01L21/205 ,  H01L21/285 ,  C30B23/06

CPC分类号： H01L21/28518 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/02658

摘要： The method for growing heteroepitaxial multiconstituent material on a substrate comprises deposition of a thin disordered layer of a "template-forming" material, i.e., material containing at least one constituent of the multiconstituent material to be grown, and differing in chemical composition from at least the substrate material, on the substrate surface at a relatively low deposition temperature, raising the substrate temperature to an intermediate transformation temperature, thereby causing the template-forming material to undergo a reaction that results in formation of "template" material, typically material having substantially the same composition as the multiconstituent material to be grown. Onto the thus formed template layer is then deposited the material for the epitaxial multiconstituent layer. This general process is exemplified by the growth of NiSi.sub.2 on a Si substrate, by first depositing at room temperature about 18.ANG. of Ni (the template-forming material), onto an atomically clean and undamaged Si(111) surface, heating the substrate to about 500.degree. C. for about 4 minutes (thereby reacting the Ni with Si from the substrate to form template material), followed by deposition, onto the now template-covered substrate, of about 250.ANG. of Ni at a rate of about 2.ANG./sec, with the (template-covered) substrate maintained at about 775.degree. C. The inventive method has wide applicability, and permits, inter alia, growth of essentially perfect epitaxial CoSi.sub.2 or NiSi.sub.2 on Si(100). Material grown by the method can be in form of an essentially continuous layer or a patterned layer, and can serve as the substrate for the growth thereon of further epitaxial material of different chemical composition.

摘要翻译： 用于在衬底上生长异质外延多构成材料的方法包括沉积“模板形成”材料的薄无序层，即，包含至少一种待成长的多构成材料的成分的材料，并且化学组成不同于至少 衬底材料，在相对低的沉积温度下在衬底表面上，将衬底温度升高到中间转变温度，从而导致模板形成材料经历导致形成“模板”材料的反应，通常材料具有基本上 与要生长的多成分材料相同的组成。 然后在这样形成的模板层上沉积外延多成像层的材料。 该通用方法的例子是在Si衬底上NiSi2的生长，首先在室温下沉积约18安培的Ni（模板形成材料）到原子清洁和未损坏的Si（111）表面上，将衬底加热至 约500℃约4分钟（从而使Ni与来自衬底的Si反应形成模板材料），然后以大约2安培的速率沉积到现在的模板覆盖的衬底上约为250埃的Ni /（模板覆盖）衬底保持在约775℃。本发明的方法具有广泛的适用性，并且尤其允许在Si（100）上生长基本上完美的外延CoSi 2或NiSi 2。 通过该方法生长的材料可以是基本上连续的层或图案化层的形式，并且可以用作其上生长具有不同化学组成的另外的外延材料的衬底。

公开(公告)号：US4901121A

公开(公告)日：1990-02-13

申请号：US185288

申请日：1988-04-18

申请人： John M. Gibson ,  John C. Hensel ,  Anthony F. Levi ,  Raymond T. Tung

发明人： John M. Gibson ,  John C. Hensel ,  Anthony F. Levi ,  Raymond T. Tung

IPC分类号： H01L21/20 ,  H01L21/335 ,  H01L29/76 ,  H01L29/772

CPC分类号： H01L29/7722 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02576 ,  H01L29/66424 ,  H01L29/7606 ,  Y10S148/142 ,  Y10S148/147

摘要： A method for producing, without etching, a perforated layer of epitaxial metal silicide, especially CoSi.sub.2, on a single crystal Si substrate, with epitaxial Si overlying the silicide layer. The layer thickness, and the number and size of the openings in the layer are such as to make the structure suitable as an electronic device, in particular, as a permeable base transistor. The number and/or size of the openings is a function of processing parameters such as the substrate orientation, the annealing temperature of the film, or the Co/Si ratio of the deposited material. A device comprising a perforated silicide layer is also disclosed.

摘要翻译： 一种用于在单晶Si衬底上制造外延金属硅化物，特别是CoSi 2的穿孔层，其上覆盖硅化物层的外延硅的方法。 层的厚度以及层中的开口的数量和尺寸使得该结构适合作为电子器件，特别是作为可渗透的基极晶体管。 开口的数量和/或尺寸是处理诸如衬底取向，膜的退火温度或沉积材料的Co / Si比的参数的函数。 还公开了一种包括多孔硅化物层的器件。

公开(公告)号：US4707197A

公开(公告)日：1987-11-17

申请号：US820581

申请日：1986-01-17

申请人： John C. Hensel ,  Anthony F. J. Levi ,  Raymond T. Tung

发明人： John C. Hensel ,  Anthony F. J. Levi ,  Raymond T. Tung

IPC分类号： H01L21/20 ,  H01L21/203

CPC分类号： H01L21/02425 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02609 ,  Y10S148/025 ,  Y10S148/072 ,  Y10S148/147

摘要： Described is a method for producing metal silicide/silicon heterostructures. The method comprises depositing a very thin Si "template" layer on a relatively cold (

摘要翻译： 描述了一种生产金属硅化物/硅异质结构的方法。 该方法包括在相对较冷（<200℃）的硅化物衬底上沉积非常薄的Si“模板”层，将衬底温度升高到约500℃-800℃的近似范围，并将其保持在同时沉积另外的Si到 模板。 所得的Si层可以具有高的晶体完整性。 硅化物有利地为0