RF grounding of cathode in process chamber
    1.
    发明授权
    RF grounding of cathode in process chamber 有权
    处理室中阴极的RF接地

    公开(公告)号:US07534301B2

    公开(公告)日:2009-05-19

    申请号:US10946403

    申请日:2004-09-21

    IPC分类号: C23C16/00 C23F1/00 H01L21/306

    CPC分类号: H01J37/32082 H01J37/32174

    摘要: An apparatus for providing a short return current path for RF current between a process chamber wall and a substrate support is provided. The RF grounding apparatus, which is RF grounded and is place above the substrate transfer port, establishes electrical contact with the substrate support only during substrate processing, such as deposition, to provide return current path for the RF current. One embodiment of the RF grounding apparatus comprises one or more low impedance flexible curtains, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Another embodiment of the RF grounding apparatus comprises a plurality of low impedance flexible straps, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Yet another embodiment of the RF grounding apparatus comprises a plurality of probes, which either are electrically connected to the grounded chamber wall or are grounded by other means, and actuators accompanying the probes. The actuators move the probes to make electrical contact with the substrate support during substrate processing.

    摘要翻译: 提供一种用于在处理室壁和衬底支撑件之间提供用于RF电流的短的返回电流路径的装置。 射频接地装置,其RF接地并位于衬底传送端口之上,仅在衬底处理(例如沉积)期间与衬底支撑件电接触,以提供RF电流的返回电流路径。 RF接地装置的一个实施例包括电连接到接地室壁的一个或多个低阻抗柔性窗帘,以及在衬底处理期间与衬底支撑件接触的一个或多个低阻抗块。 RF接地装置的另一实施例包括多个低阻抗柔性带,其电连接到接地室壁,以及一个或多个低阻抗块,其在衬底处理期间与衬底支撑件接触。 RF接地装置的另一个实施例包括多个探针,它们或者被电连接到接地室壁,或者通过其它装置接地,以及伴随探头的致动器。 致动器在衬底处理期间移动探针以与衬底支撑件电接触。

    RF GROUNDING OF CATHODE IN PROCESS CHAMBER
    2.
    发明申请
    RF GROUNDING OF CATHODE IN PROCESS CHAMBER 审中-公开
    过程室中阴极射频接地

    公开(公告)号:US20090178617A1

    公开(公告)日:2009-07-16

    申请号:US12406407

    申请日:2009-03-18

    IPC分类号: C23C16/513

    CPC分类号: H01J37/32082 H01J37/32174

    摘要: An apparatus for providing a short return current path for RF current between a process chamber wall and a substrate support is provided. The RF grounding apparatus, which is RF grounded and is place above the substrate transfer port, establishes electrical contact with the substrate support only during substrate processing, such as deposition, to provide return current path for the RF current. One embodiment of the RF grounding apparatus comprises one or more low impedance flexible curtains, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Another embodiment of the RF grounding apparatus comprises a plurality of low impedance flexible straps, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Yet another embodiment of the RF grounding apparatus comprises a plurality of probes, which either are electrically connected to the grounded chamber wall or are grounded by other means, and actuators accompanying the probes. The actuators move the probes to make electrical contact with the substrate support during substrate processing.

    摘要翻译: 提供一种用于在处理室壁和衬底支撑件之间提供用于RF电流的短的返回电流路径的装置。 射频接地装置,其RF接地并位于衬底传送端口之上,仅在衬底处理(例如沉积)期间与衬底支撑件电接触,以提供RF电流的返回电流路径。 RF接地装置的一个实施例包括电连接到接地室壁的一个或多个低阻抗柔性窗帘,以及在衬底处理期间与衬底支撑件接触的一个或多个低阻抗块。 RF接地装置的另一实施例包括多个低阻抗柔性带,其电连接到接地室壁,以及一个或多个低阻抗块,其在衬底处理期间与衬底支撑件接触。 RF接地装置的另一个实施例包括多个探针,它们或者被电连接到接地室壁,或者通过其它装置接地,以及伴随探头的致动器。 致动器在衬底处理期间移动探针以与衬底支撑件电接触。

    Methods and apparatus for supporting substrates
    3.
    发明授权
    Methods and apparatus for supporting substrates 有权
    用于支撑基材的方法和装置

    公开(公告)号:US08365682B2

    公开(公告)日:2013-02-05

    申请号:US11140777

    申请日:2005-05-31

    IPC分类号: B65G49/07

    摘要: Substrate support methods and apparatus include vertically aligned lift pins that have bearing surfaces that engage friction plates and/or magnetic fields to maintain the vertical orientation of the lift pins during substrate lifting. In some embodiments, a magnetic field and/or weighting may alternatively or additionally be used to control the vertical orientation of the lift pins, limit the angle of the lift pins, and/or prevent the lift pins from unintentionally binding in a susceptor as the susceptor is raised and prevent the resulting uneven support of the substrate.

    摘要翻译: 衬底支撑方法和装置包括垂直对齐的提升销,其具有接合摩擦板和/或磁场的承载表面,以在衬垫提升期间保持提升销的垂直取向。 在一些实施例中,可以替代地或另外地使用磁场和/或加权来控制提升销的垂直定向,限制提升销的角度和/或防止提升销在基座中无意地结合,因为 感受器被升高并且防止由此产生的基板不均匀的支撑。

    Method and apparatus for substrate transfer and processing

    公开(公告)号:US06213704B1

    公开(公告)日:2001-04-10

    申请号:US09082428

    申请日:1998-05-20

    IPC分类号: B65G4907

    摘要: The present invention allows large glass substrates to be rapidly moved from one processing station to another. Such movement occurs such that drives in different chambers are synchronized to move the glass substrates on shuttles at appropriate times. In systems according to the invention, at least a first and second chamber are provided. Typically, the first chamber is a load lock and the second chamber is a processing chamber. A substrate transfer shuttle is used to move substrate along a guide path defined by, e.g., guide rollers. Drive mechanisms are employed for most chambers to drive the shuttle along associated portions of the path. A control system is provided which powers the drive mechanism for the first chamber to drive the substrate transfer shuttle from a first position toward a second position and through an intermediate position. At the intermediate position, the substrate transfer shuttle begins to engage and induce movement of the drive mechanism for the second chamber. The control system receives an input caused by the induced movement of the drive mechanism for the second chamber, this input indicative of the substrate transfer shuttle having moved a predetermined distance beyond the intermediate position. The input may then be used to synchronize movement of the substrate transfer shuttle from the first chamber to the second chamber. Such synchronization may include reducing power to the drive mechanism for the first chamber and/or powering the drive mechanism for the second chamber.

    DIFFUSER GRAVITY SUPPORT
    7.
    发明申请
    DIFFUSER GRAVITY SUPPORT 有权
    DIFFUSER GRAVITY支持

    公开(公告)号:US20090007846A1

    公开(公告)日:2009-01-08

    申请号:US12234359

    申请日:2008-09-19

    IPC分类号: C23C16/00

    CPC分类号: H01J37/3244 C23C16/45565

    摘要: An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gases through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed.

    摘要翻译: 公开了一种用于支撑气体分布板的大部分中心部分的装置和方法。 至少一个支撑构件能够通过配合连接件接合和分离扩散器,而不阻止气体或气体流过扩散器,并且被设计成向在其周边支撑的扩散器提供垂直悬架,或者能够支撑 扩散器没有周界支撑。 在一个方面,所述至少一个支撑构件是气体输送导管的一部分,并且在另一个实施例中是与气体输送导管分离的多个支撑构件。 至少一个支撑构件能够将垂直升降或垂直压缩平移到扩散器的中心区域。 还公开了一种用于控制从气体输送管道到气体分配板的气流的方法和装置。

    PREVENTION OF FILM DEPOSITION ON PECVD PROCESS CHAMBER WALL
    8.
    发明申请
    PREVENTION OF FILM DEPOSITION ON PECVD PROCESS CHAMBER WALL 有权
    防止膜电沉积在PECVD工艺室壁上

    公开(公告)号:US20080187682A1

    公开(公告)日:2008-08-07

    申请号:US11955575

    申请日:2007-12-13

    IPC分类号: C23C16/513 C23C16/00

    摘要: A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.

    摘要翻译: 提供了一种用于处理衬底的方法和设备。 腔室主体包括腔室底部和具有狭缝阀的侧壁。 包括支撑体的基板支撑件设置在室主体中。 至少一个宽RF接地带的第一端与支撑体耦合,并且至少一个RF接地带的第二端与腔室底部联接。 至少一个延伸杆沿着支撑体的外围边缘定位。 该方法包括提供具有狭缝阀和衬底支撑件的处理室,向布置在衬底支撑件上方的分配板提供RF功率,使气体流过分布板,等离子体处理设置在衬底支架上的衬底,并减少发电 的等离子体。