公开(公告)号：US20120138950A1

公开(公告)日：2012-06-07

申请号：US13388694

申请日：2010-08-04

申请人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

发明人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

IPC分类号： H01L29/20

CPC分类号： H01L29/7787 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/42316 ,  H01L2224/73253

摘要： A gallium nitride (GaN) device that has greatly superior current handling ability per unit area than previously described GaN devices. The improvement is due to improved layout topology. The layout scheme, which uses island electrodes rather than finger electrodes, is shown to increase the active area density over that of conventional interdigitated structures. Ultra low on resistance transistors can be built using the island topology. Specifically, the present invention, which uses conventional GaN lateral technology and electrode spacing, provides a means to enhance cost/effective performance of all lateral GaN structures.

摘要翻译： 一种氮化镓（GaN）器件，其具有比先前描述的GaN器件具有非常优异的每单位面积的电流处理能力。 改进是由于布局拓扑的改进。 使用岛状电极而不是手指电极的布局方案显示出比常规叉指结构增加有源面积密度。 可以使用岛拓扑构建超低导通电阻晶体管。 具体地说，使用传统的GaN横向技术和电极间距的本发明提供了增强所有横向GaN结构的成本/有效性能的手段。

公开(公告)号：US20110186858A1

公开(公告)日：2011-08-04

申请号：US13020712

申请日：2011-02-03

申请人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

发明人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

IPC分类号： H01L29/205

CPC分类号： H01L29/0696 ,  H01L23/528 ,  H01L24/14 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41775 ,  H01L29/42356 ,  H01L29/475 ,  H01L29/7787 ,  H01L2224/73253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A semiconductor device in provided having a substrate and a semiconductor layer formed on a main surface of the substrate. A plurality of first island electrodes and a plurality of second island electrodes are placed over the semiconductor layer. The plurality of first island electrodes and second island electrodes are spaced apart from each other so as to be alternatively arranged to produce two-dimensional active regions in all feasible areas of the semiconductor layer. Each side of the first island electrodes is opposite a side of the second island electrodes. The semiconductor device can also include a plurality of strip electrodes that are formed in the regions between the first island electrodes and the second island electrodes. The strip electrodes serve as the gate electrodes of a multi-island transistor. The first island electrodes serve as the source electrodes of the multi-island transistor. The second island electrodes serve as the drain electrodes of the multi-island transistor. A plurality of connections to the gate electrodes are provided at each interstice defined by corners of the first island electrodes and the second island electrodes.

摘要翻译： 一种半导体器件，其具有基板和形成在基板的主表面上的半导体层。 多个第一岛电极和多个第二岛电极放置在半导体层上。 多个第一岛状电极和第二岛状电极彼此间隔开，以便交替地布置成在半导体层的所有可行区域中产生二维有源区。 第一岛状电极的两侧与第二岛状电极的一侧相反。 半导体器件还可以包括形成在第一岛状电极和第二岛状电极之间的区域中的多个条状电极。 带状电极用作多岛晶体管的栅电极。 第一岛电极用作多岛晶体管的源电极。 第二岛电极用作多岛晶体管的漏电极。 在由第一岛状电极和第二岛状电极的角部限定的每个间隙设置与栅电极的多个连接。

公开(公告)号：US09508797B2

公开(公告)日：2016-11-29

申请号：US14681676

申请日：2015-04-08

申请人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

发明人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

IPC分类号： H01L29/41 ,  H01L29/06 ,  H01L29/20 ,  H01L29/417 ,  H01L29/423 ,  H01L23/528 ,  H01L23/00 ,  H01L29/778 ,  H01L29/47 ,  H01L29/205

CPC分类号： H01L29/0696 ,  H01L23/528 ,  H01L24/14 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41775 ,  H01L29/42356 ,  H01L29/475 ,  H01L29/7787 ,  H01L2224/73253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A semiconductor device in provided having a substrate and a semiconductor layer formed on a main surface of the substrate. A plurality of first island electrodes and a plurality of second island electrodes are placed over the semiconductor layer. The plurality of first island electrodes and second island electrodes are spaced apart from each other so as to be alternatively arranged to produce two-dimensional active regions in all feasible areas of the semiconductor layer. Each side of the first island electrodes is opposite a side of the second island electrodes. The semiconductor device can also include a plurality of strip electrodes that are formed in the regions between the first island electrodes and the second island electrodes. The strip electrodes serve as the gate electrodes of a multi-island transistor. The first island electrodes serve as the source electrodes of the multi-island transistor. The second island electrodes serve as the drain electrodes of the multi-island transistor. A plurality of connections to the gate electrodes are provided at each interstice defined by corners of the first island electrodes and the second island electrodes.

公开(公告)号：US09064947B2

公开(公告)日：2015-06-23

申请号：US13388694

申请日：2010-08-04

申请人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

发明人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/20 ,  H01L29/417 ,  H01L29/423

CPC分类号： H01L29/7787 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/42316 ,  H01L2224/73253

摘要： A gallium nitride (GaN) device that has greatly superior current handling ability per unit area than previously described GaN devices. The improvement is due to improved layout topology. The layout scheme, which uses island electrodes rather than finger electrodes, is shown to increase the active area density over that of conventional interdigitated structures. Ultra low on resistance transistors can be built using the island topology. Specifically, the present invention, which uses conventional GaN lateral technology and electrode spacing, provides a means to enhance cost/effective performance of all lateral GaN structures.

摘要翻译： 一种氮化镓（GaN）器件，其具有比先前描述的GaN器件具有非常优异的每单位面积的电流处理能力。 改进是由于布局拓扑的改进。 使用岛状电极而不是手指电极的布局方案显示出比常规叉指结构增加有源面积密度。 可以使用岛拓扑构建超低导通电阻晶体管。 具体地说，使用传统的GaN横向技术和电极间距的本发明提供了增强所有横向GaN结构的成本/有效性能的手段。

公开(公告)号：US09029866B2

公开(公告)日：2015-05-12

申请号：US13020712

申请日：2011-02-03

申请人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

发明人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

IPC分类号： H01L29/41 ,  H01L29/205

CPC分类号： H01L29/0696 ,  H01L23/528 ,  H01L24/14 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41775 ,  H01L29/42356 ,  H01L29/475 ,  H01L29/7787 ,  H01L2224/73253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A semiconductor device in provided having a substrate and a semiconductor layer formed on a main surface of the substrate. A plurality of first island electrodes and a plurality of second island electrodes are placed over the semiconductor layer. The plurality of first island electrodes and second island electrodes are spaced apart from each other so as to be alternatively arranged to produce two-dimensional active regions in all feasible areas of the semiconductor layer. Each side of the first island electrodes is opposite a side of the second island electrodes. The semiconductor device can also include a plurality of strip electrodes that are formed in the regions between the first island electrodes and the second island electrodes. The strip electrodes serve as the gate electrodes of a multi-island transistor. The first island electrodes serve as the source electrodes of the multi-island transistor. The second island electrodes serve as the drain electrodes of the multi-island transistor. A plurality of connections to the gate electrodes are provided at each interstice defined by corners of the first island electrodes and the second island electrodes.

摘要翻译： 一种半导体器件，其具有基板和形成在基板的主表面上的半导体层。 多个第一岛电极和多个第二岛电极放置在半导体层上。 多个第一岛状电极和第二岛状电极彼此间隔开，以便交替地布置成在半导体层的所有可行区域中产生二维有源区。 第一岛状电极的两侧与第二岛状电极的一侧相反。 半导体器件还可以包括形成在第一岛状电极和第二岛状电极之间的区域中的多个条状电极。 带状电极用作多岛晶体管的栅电极。 第一岛电极用作多岛晶体管的源电极。 第二岛电极用作多岛晶体管的漏电极。 在由第一岛状电极和第二岛状电极的角部限定的每个间隙设置与栅电极的多个连接。

公开(公告)号：US08791508B2

公开(公告)日：2014-07-29

申请号：US13641003

申请日：2011-04-13

申请人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

发明人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

IPC分类号： H01L23/528 ,  H01L29/417 ,  H01L29/423 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/20 ,  H01L23/00 ,  H01L29/40 ,  H01L27/085

CPC分类号： H01L29/42316 ,  H01L24/05 ,  H01L24/13 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/085 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/41758 ,  H01L29/7786 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/13144 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05552

摘要： A Gallium Nitride (GaN) series of devices—transistors and diodes are disclosed—that have greatly superior current handling ability per unit area than previously described GaN devices. The improvement is due to improved layout topology. The devices also include a simpler and superior flip chip connection scheme and a means to reduce the thermal resistance. A simplified fabrication process is disclosed and the layout scheme which uses island electrodes rather than finger electrodes is shown to increase the active area density by two to five times that of conventional interdigitated structures. Ultra low on resistance transistors and very low loss diodes can be built using the island topology. Specifically, the present disclosure provides a means to enhance cost/effective performance of all lateral GaN structures.

摘要翻译： 公开了一种氮化镓（GaN）系列晶体管和二极管，其具有比先前描述的GaN器件具有非常优异的每单位面积的电流处理能力。 改进是由于布局拓扑的改进。 这些器件还包括一个更简单和更好的倒装芯片连接方案和降低热阻的手段。 公开了一种简化的制造工艺，并且示出了使用岛电极而不是手指电极的布局方案来增加有效面积密度是常规叉指结构的两到五倍。 可以使用岛拓扑构建超低导通电阻晶体管和非常低的损耗二极管。 具体地，本公开提供了增强所有横向GaN结构的成本/有效性能的手段。

公开(公告)号：US20130049010A1

公开(公告)日：2013-02-28

申请号：US13641003

申请日：2011-04-13

申请人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

发明人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

IPC分类号： H01L29/20

CPC分类号： H01L29/42316 ,  H01L24/05 ,  H01L24/13 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/085 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/41758 ,  H01L29/7786 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/13144 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05552

摘要： A Gallium Nitride (GaN) series of devices—transistors and diodes are disclosed—that have greatly superior current handling ability per unit area than previously described GaN devices. The improvement is due to improved layout topology. The devices also include a simpler and superior flip chip connection scheme and a means to reduce the thermal resistance. A simplified fabrication process is disclosed and the layout scheme which uses island electrodes rather than finger electrodes is shown to increase the active area density by two to five times that of conventional inter-digitated structures. Ultra low on resistance transistors and very low loss diodes can be built using the island topology. Specifically, the present disclosure provides a means to enhance cost/effective performance of all lateral GaN structures.

摘要翻译： 公开了一种氮化镓（GaN）系列晶体管和二极管，其具有比先前描述的GaN器件具有非常优异的每单位面积的电流处理能力。 改进是由于布局拓扑的改进。 这些器件还包括一个更简单和更好的倒装芯片连接方案和降低热阻的手段。 公开了简化的制造工艺，并且示出了使用岛电极而不是手指电极的布局方案，以增加有效面积密度是常规数字化结构的两到五倍。 可以使用岛拓扑构建超低导通电阻晶体管和非常低的损耗二极管。 具体地，本公开提供了增强所有横向GaN结构的成本/有效性能的手段。