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    ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS
    2.
    发明申请
    ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS 有权
    岛屿基质氮化镓微波和电源开关晶体管

    公开(公告)号：US20120138950A1

    公开(公告)日：2012-06-07

    申请号：US13388694

    申请日：2010-08-04

    申请人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

    发明人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

    IPC分类号： H01L29/20

    CPC分类号： H01L29/7787 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/42316 ,  H01L2224/73253

    摘要： A gallium nitride (GaN) device that has greatly superior current handling ability per unit area than previously described GaN devices. The improvement is due to improved layout topology. The layout scheme, which uses island electrodes rather than finger electrodes, is shown to increase the active area density over that of conventional interdigitated structures. Ultra low on resistance transistors can be built using the island topology. Specifically, the present invention, which uses conventional GaN lateral technology and electrode spacing, provides a means to enhance cost/effective performance of all lateral GaN structures.

    摘要翻译： 一种氮化镓（GaN）器件，其具有比先前描述的GaN器件具有非常优异的每单位面积的电流处理能力。 改进是由于布局拓扑的改进。 使用岛状电极而不是手指电极的布局方案显示出比常规叉指结构增加有源面积密度。 可以使用岛拓扑构建超低导通电阻晶体管。 具体地说，使用传统的GaN横向技术和电极间距的本发明提供了增强所有横向GaN结构的成本/有效性能的手段。

    Gallium Nitride Power Devices Using Island Topography
    3.
    发明申请
    Gallium Nitride Power Devices Using Island Topography 有权
    使用岛屿地形的氮化镓电力设备

    公开(公告)号：US20110186858A1

    公开(公告)日：2011-08-04

    申请号：US13020712

    申请日：2011-02-03

    申请人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

    发明人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

    IPC分类号： H01L29/205

    CPC分类号： H01L29/0696 ,  H01L23/528 ,  H01L24/14 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41775 ,  H01L29/42356 ,  H01L29/475 ,  H01L29/7787 ,  H01L2224/73253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

    摘要： A semiconductor device in provided having a substrate and a semiconductor layer formed on a main surface of the substrate. A plurality of first island electrodes and a plurality of second island electrodes are placed over the semiconductor layer. The plurality of first island electrodes and second island electrodes are spaced apart from each other so as to be alternatively arranged to produce two-dimensional active regions in all feasible areas of the semiconductor layer. Each side of the first island electrodes is opposite a side of the second island electrodes. The semiconductor device can also include a plurality of strip electrodes that are formed in the regions between the first island electrodes and the second island electrodes. The strip electrodes serve as the gate electrodes of a multi-island transistor. The first island electrodes serve as the source electrodes of the multi-island transistor. The second island electrodes serve as the drain electrodes of the multi-island transistor. A plurality of connections to the gate electrodes are provided at each interstice defined by corners of the first island electrodes and the second island electrodes.

    摘要翻译： 一种半导体器件，其具有基板和形成在基板的主表面上的半导体层。 多个第一岛电极和多个第二岛电极放置在半导体层上。 多个第一岛状电极和第二岛状电极彼此间隔开，以便交替地布置成在半导体层的所有可行区域中产生二维有源区。 第一岛状电极的两侧与第二岛状电极的一侧相反。 半导体器件还可以包括形成在第一岛状电极和第二岛状电极之间的区域中的多个条状电极。 带状电极用作多岛晶体管的栅电极。 第一岛电极用作多岛晶体管的源电极。 第二岛电极用作多岛晶体管的漏电极。 在由第一岛状电极和第二岛状电极的角部限定的每个间隙设置与栅电极的多个连接。

    Island matrixed gallium nitride microwave and power switching transistors
    4.
    发明授权
    Island matrixed gallium nitride microwave and power switching transistors 有权
    岛状矩阵氮化镓微波和功率开关晶体管

    公开(公告)号：US09064947B2

    公开(公告)日：2015-06-23

    申请号：US13388694

    申请日：2010-08-04

    申请人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

    发明人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

    IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/20 ,  H01L29/417 ,  H01L29/423

    CPC分类号： H01L29/7787 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/42316 ,  H01L2224/73253

    摘要： A gallium nitride (GaN) device that has greatly superior current handling ability per unit area than previously described GaN devices. The improvement is due to improved layout topology. The layout scheme, which uses island electrodes rather than finger electrodes, is shown to increase the active area density over that of conventional interdigitated structures. Ultra low on resistance transistors can be built using the island topology. Specifically, the present invention, which uses conventional GaN lateral technology and electrode spacing, provides a means to enhance cost/effective performance of all lateral GaN structures.

    摘要翻译： 一种氮化镓（GaN）器件，其具有比先前描述的GaN器件具有非常优异的每单位面积的电流处理能力。 改进是由于布局拓扑的改进。 使用岛状电极而不是手指电极的布局方案显示出比常规叉指结构增加有源面积密度。 可以使用岛拓扑构建超低导通电阻晶体管。 具体地说，使用传统的GaN横向技术和电极间距的本发明提供了增强所有横向GaN结构的成本/有效性能的手段。

    Gallium nitride power devices using island topography
    5.
    发明授权
    Gallium nitride power devices using island topography 有权
    使用岛状地形的氮化镓功率器件

    公开(公告)号：US09029866B2

    公开(公告)日：2015-05-12

    申请号：US13020712

    申请日：2011-02-03

    申请人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

    发明人： John Roberts ,  Ahmad Mizan ,  Girvan Patterson ,  Greg Klowak

    IPC分类号： H01L29/41 ,  H01L29/205

    CPC分类号： H01L29/0696 ,  H01L23/528 ,  H01L24/14 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41775 ,  H01L29/42356 ,  H01L29/475 ,  H01L29/7787 ,  H01L2224/73253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

    摘要： A semiconductor device in provided having a substrate and a semiconductor layer formed on a main surface of the substrate. A plurality of first island electrodes and a plurality of second island electrodes are placed over the semiconductor layer. The plurality of first island electrodes and second island electrodes are spaced apart from each other so as to be alternatively arranged to produce two-dimensional active regions in all feasible areas of the semiconductor layer. Each side of the first island electrodes is opposite a side of the second island electrodes. The semiconductor device can also include a plurality of strip electrodes that are formed in the regions between the first island electrodes and the second island electrodes. The strip electrodes serve as the gate electrodes of a multi-island transistor. The first island electrodes serve as the source electrodes of the multi-island transistor. The second island electrodes serve as the drain electrodes of the multi-island transistor. A plurality of connections to the gate electrodes are provided at each interstice defined by corners of the first island electrodes and the second island electrodes.

    摘要翻译： 一种半导体器件，其具有基板和形成在基板的主表面上的半导体层。 多个第一岛电极和多个第二岛电极放置在半导体层上。 多个第一岛状电极和第二岛状电极彼此间隔开，以便交替地布置成在半导体层的所有可行区域中产生二维有源区。 第一岛状电极的两侧与第二岛状电极的一侧相反。 半导体器件还可以包括形成在第一岛状电极和第二岛状电极之间的区域中的多个条状电极。 带状电极用作多岛晶体管的栅电极。 第一岛电极用作多岛晶体管的源电极。 第二岛电极用作多岛晶体管的漏电极。 在由第一岛状电极和第二岛状电极的角部限定的每个间隙设置与栅电极的多个连接。

    Solid state array modules for general illumination
    8.
    发明授权
    Solid state array modules for general illumination 有权
    用于一般照明的固态阵列模块

    公开(公告)号：US08764226B2

    公开(公告)日：2014-07-01

    申请号：US13564466

    申请日：2012-08-01

    申请人： John Roberts ,  Robert Chaloupecky ,  Chenhua You

    发明人： John Roberts ,  Robert Chaloupecky ,  Chenhua You

    IPC分类号： F21V9/00 ,  F21V5/00 ,  F21S4/00 ,  F21Y101/02 ,  F21V15/01 ,  F21V29/00 ,  F21V19/00 ,  F21Y103/00

    CPC分类号： F21S4/28 ,  F21V5/002 ,  F21V15/013 ,  F21V19/001 ,  F21V29/004 ,  F21V29/74 ,  F21Y2101/00 ,  F21Y2103/10 ,  F21Y2115/10

    摘要： An illumination module includes a longitudinal support member including a base portion and a pair of sidewalls extending from the base portion that together define a channel that extends in a longitudinal direction. A printed circuit board (PCB) on the base portion extends in the longitudinal direction within the channel. A plurality of light emitting diodes (LEDs) are on the PCB in a linear array. A reflective sheet is within and extends across the channel, and includes a plurality of holes that correspond with locations of the LEDs on the PCB, and the LEDs are positioned in the holes. An optical film extends across the channel above the reflective sheet and defines an optical cavity between the reflective sheet and the optical film. The optical film, the reflective sheet and the sidewalls of the support member recycle light in the optical cavity.

    摘要翻译： 照明模块包括纵向支撑构件，所述纵向支撑构件包括基部和从基部延伸的一对侧壁，所述一对侧壁一起限定沿纵向方向延伸的通道。 基部上的印刷电路板（PCB）在通道内沿纵向方向延伸。 多个发光二极管（LED）以线性阵列在PCB上。 反射片在通道内并延伸穿过通道，并且包括与PCB上的LED的位置对应的多个孔，并且LED定位在孔中。 光学膜延伸穿过反射片上方的通道并且在反射片和光学膜之间限定光学腔。 光学膜，反射片和支撑构件的侧壁在光腔中再循环光。

    SOLID STATE ARRAY MODULES FOR GENERAL ILLUMINATION
    9.
    发明申请
    SOLID STATE ARRAY MODULES FOR GENERAL ILLUMINATION 有权
    用于一般照明的固体状态阵列模块

    公开(公告)号：US20120320587A1

    公开(公告)日：2012-12-20

    申请号：US13564466

    申请日：2012-08-01

    申请人： John Roberts ,  Robert Chaloupecky ,  Chenhua You

    发明人： John Roberts ,  Robert Chaloupecky ,  Chenhua You

    IPC分类号： F21V7/00

    CPC分类号： F21S4/28 ,  F21V5/002 ,  F21V15/013 ,  F21V19/001 ,  F21V29/004 ,  F21V29/74 ,  F21Y2101/00 ,  F21Y2103/10 ,  F21Y2115/10

    摘要： An illumination module includes a longitudinal support member including a base portion and a pair of sidewalls extending from the base portion that together define a channel that extends in a longitudinal direction. A printed circuit board (PCB) on the base portion extends in the longitudinal direction within the channel. A plurality of light emitting diodes (LEDs) are on the PCB in a linear array. A reflective sheet is within and extends across the channel, and includes a plurality of holes that correspond with locations of the LEDs on the PCB, and the LEDs are positioned in the holes. An optical film extends across the channel above the reflective sheet and defines an optical cavity between the reflective sheet and the optical film. The optical film, the reflective sheet and the sidewalls of the support member recycle light in the optical cavity.

    摘要翻译： 照明模块包括纵向支撑构件，所述纵向支撑构件包括基部和从基部延伸的一对侧壁，所述一对侧壁一起限定沿纵向方向延伸的通道。 基部上的印刷电路板（PCB）在通道内沿纵向方向延伸。 多个发光二极管（LED）以线性阵列在PCB上。 反射片在通道内并且延伸穿过通道，并且包括与PCB上的LED的位置对应的多个孔，并且LED定位在孔中。 光学膜延伸穿过反射片上方的通道并且在反射片和光学膜之间限定光学腔。 光学膜，反射片和支撑构件的侧壁在光腔中再循环光。

    Solid state linear array modules for general illumination
    10.
    发明授权
    Solid state linear array modules for general illumination 有权
    用于一般照明的固态线性阵列模块

    公开(公告)号：US08240875B2

    公开(公告)日：2012-08-14

    申请号：US12146018

    申请日：2008-06-25

    申请人： John Roberts ,  Robert Chaloupecky ,  Chenhua You

    发明人： John Roberts ,  Robert Chaloupecky ,  Chenhua You

    IPC分类号： F21V7/00

    CPC分类号： F21S4/28 ,  F21V5/002 ,  F21V15/013 ,  F21V19/001 ,  F21V29/004 ,  F21V29/74 ,  F21Y2101/00 ,  F21Y2103/10 ,  F21Y2115/10

    摘要： An illumination module includes a longitudinal support member including a base portion and a pair of sidewalls extending from the base portion that together define a channel that extends in a longitudinal direction. A printed circuit board (PCB) on the base portion extends in the longitudinal direction within the channel. A plurality of light emitting diodes (LEDs) are on the PCB in a linear array. A reflective sheet is within and extends across the channel, and includes a plurality of holes that correspond with locations of the LEDs on the PCB, and the LEDs are at least partially within the holes. An optical film extends across the channel above the reflective sheet and defines an optical cavity between the reflective sheet and the optical film. The optical film, the reflective sheet and the sidewalls of the support member are configured to recycle light in the optical cavity by reflecting some light emitted by the LEDs back into the optical cavity and transmitting some light emitted by the LEDs out of the optical cavity.

    摘要翻译： 照明模块包括纵向支撑构件，所述纵向支撑构件包括基部和从基部延伸的一对侧壁，所述一对侧壁一起限定沿纵向方向延伸的通道。 基部上的印刷电路板（PCB）在通道内沿纵向方向延伸。 多个发光二极管（LED）以线性阵列在PCB上。 反射片在通道内并延伸穿过通道，并且包括与PCB上的LED的位置对应的多个孔，并且LED至少部分地在孔内。 光学膜延伸穿过反射片上方的通道并且在反射片和光学膜之间限定光学腔。 光学膜，反射片和支撑构件的侧壁被配置为通过将由LED发射的一些光反射回光腔并将由LED发射的一些光透射出光腔来再循环光腔中的光。