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22 条记录 (耗时 0.046 秒)

    Wafer handling apparatus and method of manufacturing thereof
    1.
    发明授权
    Wafer handling apparatus and method of manufacturing thereof 失效
    晶片处理装置及其制造方法

    公开(公告)号：US07364624B2

    公开(公告)日：2008-04-29

    申请号：US10759582

    申请日：2004-01-16

    申请人： John Thomas Mariner ,  Timothy J. Hejl ,  Douglas Alan Longworth ,  Jeffrey Lennartz ,  Ajit Sane ,  Andrew John Macey ,  Jon Leist ,  Thomas E. Devan

    发明人： John Thomas Mariner ,  Timothy J. Hejl ,  Douglas Alan Longworth ,  Jeffrey Lennartz ,  Ajit Sane ,  Andrew John Macey ,  Jon Leist ,  Thomas E. Devan

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/67109 ,  C23C16/4581 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68757 ,  H05B3/143

    摘要： A wafer processing device or apparatus, i.e., a heater or an electrostatic chuck, comprises a planar support platen, a support shaft having centrally located bore, and a pair of electrical conductors located in the shaft. In one embodiment, the electrical conductors are concentrically located within the bore of the shaft, with the first electrical lead being in the form of a pyrolytic graphite rod and separated from the outer second graphite electrical lead by means of a pyrolytic boron nitride (pBN) coating. In a second embodiment, the support platen and the support shaft are formed from a single unitary body of graphite. In yet another embodiment of the device of the invention, the connection posts comprise a carbon fiber composite and the exposed ends of the electrical connectors are coated with a protective ceramic paste for extended life in operations.

    摘要翻译： 晶片处理装置或装置，即加热器或静电卡盘，包括平面支撑压板，具有居中定位的孔的支撑轴和位于轴中的一对电导体。 在一个实施例中，电导体同心地位于轴的孔内，其中第一电引线为热解石墨棒的形式，并通过热解氮化硼（pBN）与外部第二石墨电引线分离， 涂层。 在第二实施例中，支撑台板和支撑轴由单一的石墨单体形成。 在本发明的装置的另一个实施例中，连接柱包括碳纤维复合材料，并且电连接器的暴露端涂覆有保护性陶瓷膏，以在使用中延长寿命。

    Composite refractory metal carbide coating on a substrate and method for making thereof
    2.
    发明申请
    Composite refractory metal carbide coating on a substrate and method for making thereof 审中-公开
    基材上的复合耐火金属碳化物涂层及其制造方法

    公开(公告)号：US20050064247A1

    公开(公告)日：2005-03-24

    申请号：US10875861

    申请日：2004-06-24

    申请人： Ajit Sane ,  Jeffrey Lennartz ,  Jon Leist ,  Daniel Kotabish ,  John Mariner ,  Andrew Macey ,  Douglas Longworth ,  Timothy Hejl ,  Thomas Devan

    发明人： Ajit Sane ,  Jeffrey Lennartz ,  Jon Leist ,  Daniel Kotabish ,  John Mariner ,  Andrew Macey ,  Douglas Longworth ,  Timothy Hejl ,  Thomas Devan

    IPC分类号： B05D7/22 ,  B32B9/00 ,  C23C16/14 ,  C23C16/36 ,  C23C16/458 ,  C23C16/56 ,  H01L21/00

    CPC分类号： C23C16/36 ,  C23C16/4581 ,  Y10T428/24917 ,  Y10T428/30

    摘要： A composite coating for use on semi-conductor processing components, comprising a refractory metal carbide coating with its surface modified by at least one of: a) a carbon donor source for a stabilized stoichiometry, and b) a layer of nitride, carbonitride or oxynitride of elements selected from a group B, Al, Si, refractory metals, transition metals, rare earth metals which may or may not contain electrically conducting pattern, and wherein the metal carbide is selected from the group consisting of silicon carbide, tantalum carbide, titanium carbide, tungsten carbide, silicon oxycarbide, zirconium carbide, hafnium carbide, lanthanum carbide, vanadium carbide, niobium carbide, magnesium carbide, chromium carbide, molybdenum carbide, beryllium carbide and mixtures thereof. The composite coating is characterized as having an improved corrosion resistance property and little emissivity sensitivity to wavelengths used in optical pyrometry under the normal semi-conductor processing environments.

    摘要翻译： 一种用于半导体加工部件的复合涂层，包括难熔金属碳化物涂层，其表面由以下至少一种修饰：a）用于稳定化学计量的碳供体源，以及b）氮化物，碳氮化物或氮氧化物层 选自B，Al，Si，难熔金属，过渡金属，可能含有导电图案或不含导电图案的稀土金属，其中金属碳化物选自碳化硅，碳化钽，钛 碳化钨，碳化钨，碳氧化硅，碳化锆，碳化铪，碳化镧，碳化钒，碳化铌，碳化镁，碳化铬，碳化钼，碳化铍及其混合物。 该复合涂层的特征在于具有改善的耐腐蚀性能，并且在通常的半导体加工环境下在光学高温测量中使用的波长的发射率灵敏度小。

    Neutron detector employing doped pyrolytic boron nitride and method of making thereof
    3.
    发明申请
    Neutron detector employing doped pyrolytic boron nitride and method of making thereof 失效
    使用掺杂热解氮化硼的中子检测器及其制造方法

    公开(公告)号：US20050067575A1

    公开(公告)日：2005-03-31

    申请号：US10670903

    申请日：2003-09-25

    申请人： Ajit Sane ,  Jon Leist ,  Arthur Moore

    发明人： Ajit Sane ,  Jon Leist ,  Arthur Moore

    IPC分类号： G01T3/08 ,  G01N23/05

    CPC分类号： G01T3/08

    摘要： The invention relates to a system for measuring a thermal neutron emission from a neutron source. The system employs a detector utilizing pBN neutron detector, wherein the pBN is doped with at least one dopant for an electrical resistivity of 1014 ohm-cm or less.

    摘要翻译： 本发明涉及一种用于测量中子源的热中子发射的系统。 该系统采用利用pBN中子检测器的检测器，其中pBN掺杂有至少一种掺杂剂，电阻率为10 14欧姆 - 厘米或更小。

    Etch resistant wafer processing apparatus and method for producing the same
    4.
    发明申请
    Etch resistant wafer processing apparatus and method for producing the same 失效
    耐蚀刻晶片处理装置及其制造方法

    公开(公告)号：US20070138601A1

    公开(公告)日：2007-06-21

    申请号：US11322809

    申请日：2005-12-30

    申请人： Wei Fan ,  Ajit Sane ,  Jeffrey Lennartz ,  Tae Kim

    发明人： Wei Fan ,  Ajit Sane ,  Jeffrey Lennartz ,  Tae Kim

    IPC分类号： H01L23/58

    CPC分类号： H01L21/68757 ,  H01L21/67011 ,  H01L21/67103 ,  Y10S269/903 ,  Y10T279/23

    摘要： A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.

    摘要翻译： 通过将膜电极沉积在基底表面上来制造晶片处理装置，然后用包括氮化物，碳化物，碳氮化物或氮氧化物中的至少一种的保护涂膜层进行外涂，所述元素选自： B，Al，Si，Ga，难熔硬金属，过渡金属及其组合。 膜电极具有与下层基底层的CTE以及保护涂层的CTE密切匹配的热膨胀系数（CTE）。

    Etch resistant wafer processing apparatus and method for producing the same
    5.
    发明授权
    Etch resistant wafer processing apparatus and method for producing the same 失效
    耐蚀刻晶片处理装置及其制造方法

    公开(公告)号：US07446284B2

    公开(公告)日：2008-11-04

    申请号：US11322809

    申请日：2005-12-30

    申请人： Wei Fan ,  Ajit Sane ,  Jeffrey Lennartz ,  Tae Won Kim

    发明人： Wei Fan ,  Ajit Sane ,  Jeffrey Lennartz ,  Tae Won Kim

    IPC分类号： H05B3/68 ,  H01L23/58

    CPC分类号： H01L21/68757 ,  H01L21/67011 ,  H01L21/67103 ,  Y10S269/903 ,  Y10T279/23

    摘要： A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.

    摘要翻译： 通过将膜电极沉积在基底表面上来制造晶片处理装置，然后用包括氮化物，碳化物，碳氮化物或氮氧化物中的至少一种的保护涂膜层进行外涂，所述元素选自： B，Al，Si，Ga，难熔硬金属，过渡金属及其组合。 膜电极具有与下层基底层的CTE以及保护涂层的CTE密切匹配的热膨胀系数（CTE）。