公开(公告)号：US07446284B2

公开(公告)日：2008-11-04

申请号：US11322809

申请日：2005-12-30

申请人： Wei Fan ,  Ajit Sane ,  Jeffrey Lennartz ,  Tae Won Kim

发明人： Wei Fan ,  Ajit Sane ,  Jeffrey Lennartz ,  Tae Won Kim

IPC分类号： H05B3/68 ,  H01L23/58

CPC分类号： H01L21/68757 ,  H01L21/67011 ,  H01L21/67103 ,  Y10S269/903 ,  Y10T279/23

摘要： A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.

摘要翻译： 通过将膜电极沉积在基底表面上来制造晶片处理装置，然后用包括氮化物，碳化物，碳氮化物或氮氧化物中的至少一种的保护涂膜层进行外涂，所述元素选自： B，Al，Si，Ga，难熔硬金属，过渡金属及其组合。 膜电极具有与下层基底层的CTE以及保护涂层的CTE密切匹配的热膨胀系数（CTE）。

公开(公告)号：US20070138601A1

公开(公告)日：2007-06-21

申请号：US11322809

申请日：2005-12-30

申请人： Wei Fan ,  Ajit Sane ,  Jeffrey Lennartz ,  Tae Kim

发明人： Wei Fan ,  Ajit Sane ,  Jeffrey Lennartz ,  Tae Kim

IPC分类号： H01L23/58

CPC分类号： H01L21/68757 ,  H01L21/67011 ,  H01L21/67103 ,  Y10S269/903 ,  Y10T279/23

摘要： A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.

摘要翻译： 通过将膜电极沉积在基底表面上来制造晶片处理装置，然后用包括氮化物，碳化物，碳氮化物或氮氧化物中的至少一种的保护涂膜层进行外涂，所述元素选自： B，Al，Si，Ga，难熔硬金属，过渡金属及其组合。 膜电极具有与下层基底层的CTE以及保护涂层的CTE密切匹配的热膨胀系数（CTE）。

公开(公告)号：US07364624B2

公开(公告)日：2008-04-29

申请号：US10759582

申请日：2004-01-16

申请人： John Thomas Mariner ,  Timothy J. Hejl ,  Douglas Alan Longworth ,  Jeffrey Lennartz ,  Ajit Sane ,  Andrew John Macey ,  Jon Leist ,  Thomas E. Devan

发明人： John Thomas Mariner ,  Timothy J. Hejl ,  Douglas Alan Longworth ,  Jeffrey Lennartz ,  Ajit Sane ,  Andrew John Macey ,  Jon Leist ,  Thomas E. Devan

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67109 ,  C23C16/4581 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68757 ,  H05B3/143

摘要： A wafer processing device or apparatus, i.e., a heater or an electrostatic chuck, comprises a planar support platen, a support shaft having centrally located bore, and a pair of electrical conductors located in the shaft. In one embodiment, the electrical conductors are concentrically located within the bore of the shaft, with the first electrical lead being in the form of a pyrolytic graphite rod and separated from the outer second graphite electrical lead by means of a pyrolytic boron nitride (pBN) coating. In a second embodiment, the support platen and the support shaft are formed from a single unitary body of graphite. In yet another embodiment of the device of the invention, the connection posts comprise a carbon fiber composite and the exposed ends of the electrical connectors are coated with a protective ceramic paste for extended life in operations.

摘要翻译： 晶片处理装置或装置，即加热器或静电卡盘，包括平面支撑压板，具有居中定位的孔的支撑轴和位于轴中的一对电导体。 在一个实施例中，电导体同心地位于轴的孔内，其中第一电引线为热解石墨棒的形式，并通过热解氮化硼（pBN）与外部第二石墨电引线分离， 涂层。 在第二实施例中，支撑台板和支撑轴由单一的石墨单体形成。 在本发明的装置的另一个实施例中，连接柱包括碳纤维复合材料，并且电连接器的暴露端涂覆有保护性陶瓷膏，以在使用中延长寿命。

公开(公告)号：US20050064247A1

公开(公告)日：2005-03-24

申请号：US10875861

申请日：2004-06-24

申请人： Ajit Sane ,  Jeffrey Lennartz ,  Jon Leist ,  Daniel Kotabish ,  John Mariner ,  Andrew Macey ,  Douglas Longworth ,  Timothy Hejl ,  Thomas Devan

发明人： Ajit Sane ,  Jeffrey Lennartz ,  Jon Leist ,  Daniel Kotabish ,  John Mariner ,  Andrew Macey ,  Douglas Longworth ,  Timothy Hejl ,  Thomas Devan

IPC分类号： B05D7/22 ,  B32B9/00 ,  C23C16/14 ,  C23C16/36 ,  C23C16/458 ,  C23C16/56 ,  H01L21/00

CPC分类号： C23C16/36 ,  C23C16/4581 ,  Y10T428/24917 ,  Y10T428/30

摘要： A composite coating for use on semi-conductor processing components, comprising a refractory metal carbide coating with its surface modified by at least one of: a) a carbon donor source for a stabilized stoichiometry, and b) a layer of nitride, carbonitride or oxynitride of elements selected from a group B, Al, Si, refractory metals, transition metals, rare earth metals which may or may not contain electrically conducting pattern, and wherein the metal carbide is selected from the group consisting of silicon carbide, tantalum carbide, titanium carbide, tungsten carbide, silicon oxycarbide, zirconium carbide, hafnium carbide, lanthanum carbide, vanadium carbide, niobium carbide, magnesium carbide, chromium carbide, molybdenum carbide, beryllium carbide and mixtures thereof. The composite coating is characterized as having an improved corrosion resistance property and little emissivity sensitivity to wavelengths used in optical pyrometry under the normal semi-conductor processing environments.

摘要翻译： 一种用于半导体加工部件的复合涂层，包括难熔金属碳化物涂层，其表面由以下至少一种修饰：a）用于稳定化学计量的碳供体源，以及b）氮化物，碳氮化物或氮氧化物层 选自B，Al，Si，难熔金属，过渡金属，可能含有导电图案或不含导电图案的稀土金属，其中金属碳化物选自碳化硅，碳化钽，钛 碳化钨，碳化钨，碳氧化硅，碳化锆，碳化铪，碳化镧，碳化钒，碳化铌，碳化镁，碳化铬，碳化钼，碳化铍及其混合物。 该复合涂层的特征在于具有改善的耐腐蚀性能，并且在通常的半导体加工环境下在光学高温测量中使用的波长的发射率灵敏度小。

公开(公告)号：US06670025B2

公开(公告)日：2003-12-30

申请号：US09865395

申请日：2001-05-24

申请人： Ajit Y. Sane ,  Jeffrey Lennartz ,  Arthur Moore ,  Thomas Devan

发明人： Ajit Y. Sane ,  Jeffrey Lennartz ,  Arthur Moore ,  Thomas Devan

IPC分类号： B32B900

CPC分类号： C23C16/45523 ,  C04B35/583 ,  C04B41/009 ,  C04B41/5064 ,  C04B41/87 ,  C04B2235/3821 ,  C04B2235/3826 ,  C04B2235/3856 ,  C04B2235/386 ,  C04B2235/3865 ,  C04B2235/3873 ,  C04B2235/3886 ,  C04B2235/3895 ,  C04B2235/422 ,  C04B2235/721 ,  C04B2235/723 ,  C04B2235/80 ,  C23C16/342 ,  C30B15/10 ,  C30B35/00 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30 ,  C04B41/4531 ,  C04B35/522

摘要： A method of forming a pyrolytic boron nitride (PBN) article and an article having layers of PBN separated by layers of PBN having a dopant of sufficient concentration to induce peeling, the steps of introducing vapors of ammonia and a gaseous boron halide in a suitable ratio into a heated furnace reactor to cause boron nitride to be deposited in layers on a substrate, with at least one gaseous dopant injected into furnace at controlled periodic interval(s) such that at least two selected layers of boron nitride are doped with said gaseous dopant(s) at a minimum average concentration of 2 atomic wt % at a depth ranging from 1000 to 2000 angstroms in each selected layer, and with the selected layers spaced apart about 0.1 micron to 100 microns apart.

公开(公告)号：US20060165994A1

公开(公告)日：2006-07-27

申请号：US11175236

申请日：2005-07-06

申请人： George Dalakos ,  Toshiki Ebata ,  Patricia Hubbard ,  Charles Iacovangelo ,  Jeffrey Lennartz ,  Henry Marek ,  Yuji Morikawa ,  Xiang Liu

发明人： George Dalakos ,  Toshiki Ebata ,  Patricia Hubbard ,  Charles Iacovangelo ,  Jeffrey Lennartz ,  Henry Marek ,  Yuji Morikawa ,  Xiang Liu

IPC分类号： B32B9/00

CPC分类号： C04B41/009 ,  C04B41/5031 ,  C04B41/5063 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C23C14/0617 ,  C23C14/22 ,  C23C16/303 ,  C23C16/4404 ,  C23C16/4581 ,  C23C16/513 ,  H01L21/68757 ,  Y10T428/30 ,  C04B41/4529 ,  C04B41/4531 ,  C04B41/5064 ,  C04B41/5057 ,  C04B41/522 ,  C04B35/522 ,  C04B35/583

摘要： Disclosed herein is a crack-free protective coating comprising at least one of aluminum nitride, aluminum oxide, aluminum oxynitride or combinations thereof. Disclosed herein too is a method for making an article comprising disposing a protective coating comprising at least one of aluminum nitride, aluminum oxide, aluminum oxynitride or combinations thereof upon a substrate comprising pyrolytic boron nitride, pyrolytic graphite and/or carbon doped boron nitride.

摘要翻译： 本文公开了包含氮化铝，氧化铝，氮氧化铝或其组合中的至少一种的无裂纹保护涂层。 本文还公开了一种制造制品的方法，包括将包含氮化铝，氧化铝，氮氧化铝或其组合中的至少一种的保护涂层设置在包含热解氮化硼，热解石墨和/或掺碳氮化硼的基板上。

公开(公告)号：US07147910B2

公开(公告)日：2006-12-12

申请号：US10747514

申请日：2003-12-29

申请人： Ajit Y. Sane ,  Jeffrey Lennartz ,  Arthur Moore ,  Thomas Devan

发明人： Ajit Y. Sane ,  Jeffrey Lennartz ,  Arthur Moore ,  Thomas Devan

IPC分类号： B32B9/00

CPC分类号： C23C16/45523 ,  C04B35/583 ,  C04B41/009 ,  C04B41/5064 ,  C04B41/87 ,  C04B2235/3821 ,  C04B2235/3826 ,  C04B2235/3856 ,  C04B2235/386 ,  C04B2235/3865 ,  C04B2235/3873 ,  C04B2235/3886 ,  C04B2235/3895 ,  C04B2235/422 ,  C04B2235/721 ,  C04B2235/723 ,  C04B2235/80 ,  C23C16/342 ,  C30B15/10 ,  C30B35/00 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30 ,  C04B41/4531 ,  C04B35/522

摘要： A method of forming a pyrolytic boron nitride (PBN) article and an article having layers of PBN separated by layers of PBN having a dopant of sufficient concentration to induce peeling, the steps of introducing vapors of ammonia and a gaseous boron halide in a suitable ratio into a heated furnace reactor to cause boron nitride to be deposited in layers on a substrate, with at least one gaseous dopant injected into furnace at controlled periodic interval(s) such that at least two selected layers of boron nitride are doped with said gaseous dopant(s) at a minimum average concentration of 0.1 atomic wt % at a depth ranging from 1000 to 2000 angstroms in each selected layer, and with the selected layers spaced apart about 0.1 micron to 100 microns.

摘要翻译： 形成热解氮化硼（PBN）制品的方法和具有由具有足够浓度的掺杂剂的PBN层分离的PBN层的物品诱导剥离的制品，以适当比例引入氨和气态卤化硼的蒸气的步骤 进入加热炉反应器中以使氮化硼以基底层上的方式沉积，其中至少一种气态掺杂剂以受控的周期性间隔注入炉中，使得至少两个选定的氮化硼层掺杂有所述气体掺杂剂 在每个选择的层中在1000至2000埃的深度范围内以0.1原子％重量的最小平均浓度，并且所选择的层间隔约0.1微米至100微米。