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    Current mirror methodology quantifying time dependent thermal instability accurately in SOI BJT circuitry
    1.
    发明授权
    Current mirror methodology quantifying time dependent thermal instability accurately in SOI BJT circuitry 有权
    电流镜法在SOI BJT电路中精确地量化时间依赖性热不稳定性

    公开(公告)号：US07422366B1

    公开(公告)日：2008-09-09

    申请号：US10939006

    申请日：2004-09-10

    申请人： Jonggook Kim ,  Yun Liu ,  Joseph A De Santis

    发明人： Jonggook Kim ,  Yun Liu ,  Joseph A De Santis

    IPC分类号： G01K7/01

    CPC分类号： G01K7/01 ,  G01R31/2621

    摘要： A current mirror method is provided that can be utilized to evaluate thermal issues is silicon-on-insulator (SOI) bipolar junction transistors (BJTs). The method significantly improves safe operating area (SOA) measurement sensitivity. Unlike conventional methods, the current mirror method can provide quantitative analysis of the BJTs thermal instability over a wide power range, even in the apparent SOA of the device. This method can also predict and evaluate SOA with respect to emitter ballast resistance and current crowding.

    摘要翻译： 提供了可用于评估热问题的电流镜方法，即绝缘体上硅（SOI）双极结型晶体管（BJT）。 该方法显着提高了安全操作面积（SOA）测量灵敏度。 与传统方法不同，即使在器件的明显SOA中，电流镜法也可以在宽功率范围内提供BJT热不稳定性的定量分析。 该方法还可以针对发射器镇流电阻和电流拥挤来预测和评估SOA。

    Safe box
    3.
    外观设计
    Safe box 有权

    公开(公告)号：USD1048645S1

    公开(公告)日：2024-10-22

    申请号：US29894003

    申请日：2023-06-05

    申请人： Yun Liu

    设计人： Yun Liu

    摘要： FIG. 1 is a front, right and top perspective view of a safe box, showing my new design;
    FIG. 2 is a rear, left and bottom perspective view thereof;
    FIG. 3 is a front view thereof;
    FIG. 4 is a rear view thereof;
    FIG. 5 is a left side view thereof;
    FIG. 6 is a right side view thereof;
    FIG. 7 is a top plan view thereof; and,
    FIG. 8 is a bottom plan view thereof.

    Reliability estimation methods for large networked systems
    4.
    发明授权
    Reliability estimation methods for large networked systems 有权
    大型网络系统的可靠性估计方法

    公开(公告)号：US08665731B1

    公开(公告)日：2014-03-04

    申请号：US13400320

    申请日：2012-02-20

    申请人： Anapathur V. Ramesh ,  Kishor S. Trivedi ,  Tilak C. Sharma ,  Dazhi Wang ,  David William Twigg ,  Le P. Nguyen ,  Yun Liu

    发明人： Anapathur V. Ramesh ,  Kishor S. Trivedi ,  Tilak C. Sharma ,  Dazhi Wang ,  David William Twigg ,  Le P. Nguyen ,  Yun Liu

    IPC分类号： H04J1/16 ,  G06F11/00

    CPC分类号： H04L41/5009 ,  H04L41/12 ,  H04L41/145

    摘要： A computer-based method for determining a probability that no path exists from a starting node to a target node within a network of nodes and directional links between pairs of nodes. The nodes and directional links form paths of a reliability graph and the method is performed using a computer coupled to a database. The method includes selecting a set of paths between the starting node and the target node that have been determined to be reliable, calculating a reliability of the union of the selected path sets, setting an upper bound for unreliability of the set of all paths, selecting a set of minimal cutsets from all cutsets that lie between the starting node and the target node, calculating the probability of the union of the minimal cutsets, and setting a lower bound for the unreliability of the set of all cutsets.

    摘要翻译： 一种基于计算机的方法，用于确定节点网络中的起始节点和目标节点之间没有路径以及节点对之间的定向链路的概率。 节点和方向链路形成可靠性图的路径，并且使用耦合到数据库的计算机来执行该方法。 该方法包括：选择已经被确定为可靠的起始节点和目标节点之间的路径集合，计算所选路径集合的并集的可靠性，设置所有路径集合的不可靠性的上限，选择 来自位于起始节点和目标节点之间的所有切割线的一组最小切割，计算最小切割的并集的概率，以及为所有切割集的集合的不可靠性设置下限。

    V-shaped resonators for addition of broad-area laser diode arrays
    7.
    发明授权
    V-shaped resonators for addition of broad-area laser diode arrays 有权
    用于添加广域激光二极管阵列的V形谐振器

    公开(公告)号：US08340151B2

    公开(公告)日：2012-12-25

    申请号：US12966423

    申请日：2010-12-13

    申请人： Bo Liu ,  Yun Liu ,  Yehuda Y. Braiman

    发明人： Bo Liu ,  Yun Liu ,  Yehuda Y. Braiman

    IPC分类号： H01S3/08

    CPC分类号： G02B27/14

    摘要： A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

    摘要翻译： 描述了用于添加广域半导体激光二极管阵列的系统和方法。 该系统可以包括激光二极管阵列，V形外腔和光栅系统，为激光二极管阵列的相位锁定提供反馈。 用于将激光二极管发射沿着两个光学路径耦合的V形镜可以是V形棱镜，V形阶梯镜或者包括多个V形微镜。 V形外腔可以是环形腔。 该系统可以包括外部注入激光器，以进一步提高相干性和相位锁定。

    PHOTODYNAMIC THERAPY WITH PHTHALOCYANINES AND RADICAL SOURCES
    8.
    发明申请
    PHOTODYNAMIC THERAPY WITH PHTHALOCYANINES AND RADICAL SOURCES 审中-公开
    光化学治疗与磷酸盐和放射源

    公开(公告)号：US20120323164A1

    公开(公告)日：2012-12-20

    申请号：US13523940

    申请日：2012-06-15

    申请人： Malcolm E. Kenney ,  Yun Liu

    发明人： Malcolm E. Kenney ,  Yun Liu

    IPC分类号： A61M37/00 ,  A61P35/00 ,  A61P17/06 ,  A61P17/00 ,  A61K31/695 ,  C09B47/04

    CPC分类号： A61K31/695 ,  A61K31/555 ,  A61K41/0071 ,  C09B47/0675 ,  C09B47/073 ,  C09B69/008

    摘要： The use of phthalocyanines together with a free radical source for photodynamic therapy is described. The free radical sources cause the photodecomposition of the phthalocyanines, which can be useful for various reasons such as allowing light to penetrate to lower tissue levels that would otherwise be obscured. The nature of the phthalocyanine and the free radical source chosen can both have an influence on the rate of photodecomposition. The free radical sources can be provided along with the phthalocyanines either in free unattached form, or they can be attached to the phthalocyanines themselves.

    摘要翻译： 描述了将酞菁与自由基源一起用于光动力疗法。 自由基源导致酞菁的光分解，其可以由于各种原因而有用，例如允许光穿透以降低否则将被模糊的组织水平。 选择的酞菁和自由基的性质都可以对光分解速率产生影响。 自由基源可以与酞菁一起以游离的未附着形式提供，或者它们可以连接到酞菁本身。

    PLASMA TREATMENT ON SEMICONDUCTOR WAFERS
    10.
    发明申请
    PLASMA TREATMENT ON SEMICONDUCTOR WAFERS 审中-公开
    半导体波长处理等离子体处理

    公开(公告)号：US20120168943A1

    公开(公告)日：2012-07-05

    申请号：US12982719

    申请日：2010-12-30

    申请人： Kah Wee Gan ,  Yonggang Jin ,  Anandan Ramasamy ,  Yun Liu

    发明人： Kah Wee Gan ,  Yonggang Jin ,  Anandan Ramasamy ,  Yun Liu

    IPC分类号： H01L23/485 ,  H01L21/50

    CPC分类号： H01L24/96 ,  H01L21/561 ,  H01L21/568 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/08235 ,  H01L2224/12105 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/014

    摘要： A semiconductor package and method of forming the same is described. The semiconductor package is formed from a semiconductor die cut from a semiconductor wafer that has a passivation layer. The semiconductor wafer is exposed to ionized gas causing the passivation layer to roughen. The semiconductor wafer is cut to form a plurality of semiconductor dies each with a roughened passivation layer. The plurality of semiconductor dies are placed on an adhesive layer to form a reconstituted wafer, and an encapsulation layer is formed enclosing the adhesive layer and the plurality of semiconductor dies. The passivation layer is removed and the semiconductor package formed includes electrical contacts for establishing electrical connections external to the semiconductor package.

    摘要翻译： 描述了半导体封装及其形成方法。 半导体封装由从具有钝化层的半导体晶片切割的半导体管芯形成。 将半导体晶片暴露于电离气体，导致钝化层变粗糙。 切割半导体晶片以形成多个具有粗糙化钝化层的半导体管芯。 多个半导体管芯被放置在粘合剂层上以形成重构的晶片，并且形成包封粘合剂层和多个半导体管芯的封装层。 去除钝化层，形成的半导体封装包括用于在半导体封装外部建立电连接的电触头。