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    Copolymer useful for positive photoresist and chemical amplification positive photoresist composition comprising the same
    1.
    发明授权
    Copolymer useful for positive photoresist and chemical amplification positive photoresist composition comprising the same 失效
    用于正性光致抗蚀剂的共聚物和包含其的化学扩增正性光致抗蚀剂组合物

    公开(公告)号：US5989775A

    公开(公告)日：1999-11-23

    申请号：US998546

    申请日：1997-12-26

    申请人： Joo-Hyeon Park ,  Ji-Hong Kim ,  Ki-Dae Kim ,  Sun-Yi Park ,  Seong-Ju Kim

    发明人： Joo-Hyeon Park ,  Ji-Hong Kim ,  Ki-Dae Kim ,  Sun-Yi Park ,  Seong-Ju Kim

    IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

    摘要： A copolymer having a repeating unit represented by the following general formula I and a chemical amplification positive photoresist composition having the copolymer and a photoacid generator. The photoresist can allow for a good pattern shape even though a post-baking is taken in a somewhat delayed time and for a use of any radiation, such as uv light, deep uv light and charged particle beam. Also, it is superior in storage stability and resolution so that it is useful for the high integration of semiconductor devices. The polymer ranges, in polystyrene-reduced average molecular weight, from 1,000 to 1,000,000. The polymer is represented by the following repeating pattern: ##STR1## wherein, R.sub.1, R.sub.2 and R.sub.3 independently represent a hydrogen atom or a methyl; R.sub.4, R.sub.5 and R.sub.6 independently represent a hydrogen atom, an alkyl group, an alkoxy group or a halogen; 1, m, n each is a repeating number satisfying the condition that 0.3

    摘要翻译： 具有由以下通式I表示的重复单元的共聚物和具有共聚物和光致酸发生剂的化学扩增正性光致抗蚀剂组合物。 即使在稍微延迟的时间内进行后烘烤并且使用诸如紫外光，深紫外光和带电粒子束的任何辐射，光致抗蚀剂可以允许良好的图案形状。 此外，它在存储稳定性和分辨率方面是优异的，因此它对于半导体器件的高集成是有用的。 聚苯乙烯换算的聚合物的平均分子量为1,000至1,000,000。 聚合物由以下重复图案表示：其中，R1，R2和R3独立地表示氢原子或甲基; R4，R5和R6独立地表示氢原子，烷基，烷氧基或卤素; 1，m，n分别为满足0.3 <1 /（m + n）<0.9,0.1

    Polymer for positive photoresist and chemical amplified positive photoresist composition containing the same
    2.
    发明授权
    Polymer for positive photoresist and chemical amplified positive photoresist composition containing the same 失效
    用于正性光致抗蚀剂的聚合物和含有该光致抗蚀剂的化学扩增的正性光致抗蚀剂组合物

    公开(公告)号：US5962185A

    公开(公告)日：1999-10-05

    申请号：US938925

    申请日：1997-09-26

    申请人： Joo-Hyeon Park ,  Seong-Ju Kim ,  Ji-Hong Kim ,  Ki-Dae Kim

    发明人： Joo-Hyeon Park ,  Seong-Ju Kim ,  Ji-Hong Kim ,  Ki-Dae Kim

    IPC分类号： C08F212/04 ,  C07C69/736 ,  C08F216/10 ,  C08F220/30 ,  G03C1/00 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

    CPC分类号： G03F7/0045 ,  C08F220/30 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/111

    摘要： A positive chemical amplified photoresist composition having as a matrix resin a polymer having the repeating unit of Formula (I) and a photoacid generator. The polymer ranges, in polystyrene-reduced weight average molecular weight, from about 2,000 to 1,000,000. The photoresist composition is possible to develop in alkali and shows excellent sensitivity, resolution and transmissivity to deep uv light in addition to being superior in storage preservativity. The repeating unit of Formula (I) is: ##STR1## wherein, R.sub.2, R.sub.2 and R.sub.3 are independently represented by a hydrogen atom or a methyl group; R.sub.4 is a hydrogen atom, an alkyl group or an alkoxy group; R.sub.5 is functions as an acid-labile protective group and is selected from a t-butyl group, a tetrahydropyranyl group or an alkoxymethylene group; j is an integer of 1-8; k is an integer of 0-8; and 1, m and n each represent a mole ratio, satisfying the condition of l+m+n=1 where 0

    摘要翻译： 一种正性化学放大光致抗蚀剂组合物，其具有作为基质树脂的具有式（I）的重复单元的聚合物和光酸产生剂。 聚苯乙烯换算的重均分子量范围为约2,000至1,000,000。 光致抗蚀剂组合物可以在碱中显影，并且除了具有优异的储存保存性之外，对深紫外光具有优异的灵敏度，分辨率和透射率。 式（I）的重复单元是：其中R2，R2和R3独立地由氢原子或甲基表示; R4是氢原子，烷基或烷氧基; R5用作酸不稳定保护基，选自叔丁基，四氢吡喃基或烷氧基亚甲基; j为1-8的整数; k是0-8的整数; 和1，m和n各自表示摩尔比，满足条件1 + m + n = 1，其中0 <1 <0.4。

    Positive photoresist composition
    6.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号：US5677103A

    公开(公告)日：1997-10-14

    申请号：US723679

    申请日：1996-09-30

    申请人： Seong-Ju Kim ,  Joo-Hyeon Park ,  Ji-Hong Kim ,  Sun-Yi Park

    发明人： Seong-Ju Kim ,  Joo-Hyeon Park ,  Ji-Hong Kim ,  Sun-Yi Park

    IPC分类号： G03F7/022 ,  G03F7/023 ,  G03F7/039 ,  H01L21/027

    CPC分类号： G03F7/023 ,  G03F7/022

    摘要： A positive photoresist composition which is of high resolution, high sensitivity and wide focusing range and suitable for high integration of semiconductor devices and shows superior resist pattern profile, comprising quinonediazide sulfonic acid ester as a photoresist, an alkali soluble resin, a solvent, and additives, said quinonediazide sulfonic acid ester being prepared through the esterification of 1,2-naphthoquinonediazidesulfonyl halide or 1,2-benzoquinonediazidesulfonyl halide with an aromatic hydroxy compound represented by the following structural formula I: ##STR1## wherein R.sub.1 and R.sub.2 are independently hydrogen, halogen, an alkyl group or an alkoxy group; a is an integer of 1 to 3; b is an integer of 1 to 8; c is an integer of 1 to 12; and R.sub.3 is an alkyl group containing ether, mercapthane, sulfoxide, sulfone, aryl group or hydroxy group.

    摘要翻译： 具有高分辨率，高灵敏度和宽聚焦范围的正光致抗蚀剂组合物，并且适用于半导体器件的高集成度，并且显示出优异的抗蚀剂图案轮廓，其包含醌二叠氮化物磺酸酯作为光致抗蚀剂，碱溶性树脂，溶剂和添加剂 所述醌二叠氮化物磺酸酯是通过1,2-萘醌二叠氮基卤化物或1,2-苯醌二叠氮化物磺酰卤与由以下结构式I表示的芳族羟基化合物的酯化制备的：其中R 1和R 2独立地为 氢，卤素，烷基或烷氧基; a为1〜3的整数， b为1〜8的整数， c为1〜12的整数， R3是含有醚基的烷基，巯基，亚砜，砜，芳基或羟基。

    Methods of forming non-volatile memory devices having floating gate electrodes
    9.
    发明授权
    Methods of forming non-volatile memory devices having floating gate electrodes 失效
    形成具有浮动栅电极的非易失性存储器件的方法

    公开(公告)号：US07445997B2

    公开(公告)日：2008-11-04

    申请号：US11103069

    申请日：2005-04-11

    申请人： Won-Jun Lee ,  Tae-Hyun Kim ,  Yong-Sun Ko ,  Kyung-Hyun Kim ,  Byoung-Moon Yoon ,  Ji-Hong Kim

    发明人： Won-Jun Lee ,  Tae-Hyun Kim ,  Yong-Sun Ko ,  Kyung-Hyun Kim ,  Byoung-Moon Yoon ,  Ji-Hong Kim

    IPC分类号： H01L21/336

    CPC分类号： H01L27/115 ,  H01L27/11521

    摘要： Methods of forming non-volatile memory devices include the steps of forming a semiconductor substrate having first and second floating gate electrodes thereon and an electrically insulating region extending between the first and second floating gate electrodes. A step is then performed to etch back the electrically insulating region to expose upper corners of the first and second floating gate electrodes. Another etching step is then performed. This etching step includes exposing upper surfaces and the exposed upper corners of the first and second floating gate electrodes to an etchant that rounds the exposed upper corners of the first and second floating gate electrodes. The step of etching back the electrically insulating region includes etching back the electrically insulating region to expose sidewalls of the first and second floating gate electrodes having heights ranging from about 30 Å to about 200 Å. The step of exposing the upper corners of the first and second floating gate electrodes to an etchant is followed by the step of etching back the electrically insulating region to expose entire sidewalls of the first and second floating gate electrodes.

    摘要翻译： 形成非易失性存储器件的方法包括以下步骤：在其上形成具有第一和第二浮栅的半导体衬底和在第一和第二浮栅之间延伸的电绝缘区。 然后执行步骤以回蚀电绝缘区域以暴露第一和第二浮栅电极的上角。 然后执行另一蚀刻步骤。 该蚀刻步骤包括将第一和第二浮栅电极的上表面和暴露的上角露出到蚀刻剂，该蚀刻剂围绕第一和第二浮栅的暴露的上角。 蚀刻回电绝缘区域的步骤包括蚀刻电绝缘区域以暴露第一和第二浮栅电极的侧壁，其高度范围为约至约200。 将第一和第二浮栅的上角暴露于蚀刻剂的步骤之后是蚀刻电绝缘区以暴露第一和第二浮栅的整个侧壁的步骤。

    Parallel distributed sample descrambling apparatus of passive optical network and method thereof
    10.
    发明授权
    Parallel distributed sample descrambling apparatus of passive optical network and method thereof 有权
    无源光网络并行分布式采样解扰装置及其方法

    公开(公告)号：US07206945B2

    公开(公告)日：2007-04-17

    申请号：US10317186

    申请日：2002-12-12

    申请人： Ji-Hong Kim

    发明人： Ji-Hong Kim

    IPC分类号： H04K9/00

    CPC分类号： H04L25/03872

    摘要： Disclosed is a parallel distributed sample descrambling (DSS) apparatus and a method that lowers a clock speed of 622 MHz into ⅛ speed (77.76 MHz) and operates a serial descrambling processing in unit of bit by converting the processing into a parallel descrambling processing in unit of byte, power consumption can thus be reduced and a sufficient timing margin can be secured. The parallel DSS apparatus includes a serial-parallel conversion unit for converting receiving data into parallel data (D[7:0]) and generating a counter signal, a header error check (hereinafter, as HEC) generation unit for generating HEC data of the receiving data by CRC calculation, and abstracting upper two bits of the HEC data, and a descrambling processing unit for performing parallel descrambling of byte module by receiving output signals of the serial-parallel conversion unit and the HEC generation unit.

    摘要翻译： 公开了一种并行分布式采样解扰（DSS）装置和一种将622MHz的时钟速度降至1/8速度（77.76MHz）的方法，并且通过将处理转换为并行解扰处理来操作以比特为单位的串行解扰处理 以字节为单位，因此可以降低功耗并且可以确保足够的时序余量。 并行DSS装置包括：串行并行转换单元，用于将接收数据转换成并行数据（D [7：0]）并产生计数器信号，头部错误检查（以下称为HEC）生成单元，用于生成HEC数据 通过CRC计算接收数据，以及抽取HEC数据的高两位;以及解扰处理单元，用于通过接收串行 - 并行转换单元和HEC生成单元的输出信号来执行字节模块的并行解扰。