Method of manufacturing low resistance gates and interconnections
    2.
    发明授权
    Method of manufacturing low resistance gates and interconnections 失效
    制造低电阻门和互连的方法

    公开(公告)号:US4392299A

    公开(公告)日:1983-07-12

    申请号:US223493

    申请日:1981-01-08

    申请人: Joseph M. Shaw

    发明人: Joseph M. Shaw

    摘要: A method of forming low resistance silicided gates or interconnects is described wherein a refractory metal and silicon is simultaneously co-deposited to form a composite layer which is thereafter heat treated in a non-oxidizing atmosphere to form the polycrystalline state of the silicide.

    摘要翻译: 描述了形成低电阻硅化栅或互连的方法,其中同时共沉积难熔金属和硅以形成复合层,然后在非氧化性气氛中进行热处理以形成硅化物的多晶态。