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    Hybrid domain wall-hall cross device
    4.
    发明授权
    Hybrid domain wall-hall cross device 有权
    混合域墙 - 交叉装置

    公开(公告)号：US09276197B2

    公开(公告)日：2016-03-01

    申请号：US14536872

    申请日：2014-11-10

    申请人： Mark B. Johnson ,  Christopher Malec

    发明人： Mark B. Johnson ,  Christopher Malec

    IPC分类号： H01L43/06 ,  G11C11/18 ,  H01L43/04 ,  G11C11/16

    CPC分类号： H01L43/065 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/04

    摘要： A hybrid domain wall Hall cross device consists of a semiconductor Hall cross having a top surface and a pair of arms intersecting at a center region, and a ferromagnetic wire fabricated on the top surface, electrically isolated from the Hall cross, and having a constriction proximate to the center of the Hall cross. The device provides a magnetoelectronic MRAM storage cell with improved performance characteristics. Binary storage is associated with a trapped domain wall having one of two stable orientations. The bit state can be written using current driven domain wall motion. This is a STT process in which the write current is applied to a thin film, low impedance wire. Heating is minimized and no wear-out mechanism is known to exist.

    摘要翻译： 混合域壁霍尔交叉装置由具有上表面和一对在中心区域相交的一对臂的半导体霍尔交叉构成，并且在顶表面上制造的铁磁线与霍尔交叉电隔离，并且具有接近的收缩 到霍尔中心的十字架。 该器件提供具有改进的性能特性的磁电子MRAM存储单元。 二元存储与具有两个稳定取向之一的被捕获的畴壁相关联。 位状态可以使用当前的驱动域壁运动来写入。 这是一种STT过程，其中写入电流被施加到薄膜，低阻抗线。 加热最小化，并且不知道存在磨损机制。

    Spin memory with write pulse
    5.
    发明授权
    Spin memory with write pulse 有权
    旋转记忆与写入脉冲

    公开(公告)号：US07596018B2

    公开(公告)日：2009-09-29

    申请号：US11929495

    申请日：2007-10-30

    申请人： Mark B. Johnson

    发明人： Mark B. Johnson

    IPC分类号： G11C11/14

    CPC分类号： H01L43/06 ,  G01R33/06 ,  G01R33/1284 ,  G11B5/378 ,  G11C11/16 ,  G11C11/18 ,  G11C11/5607 ,  H01L27/222 ,  H01L27/224 ,  H01L27/228 ,  H01L29/66984 ,  H03K19/18

    摘要： An electron spin-based memory cell has a first ferromagnetic layer with a changeable magnetization state and a second ferromagnetic layer with a fixed magnetization state. A non-volatile logic state of such cell is dependent on a relationship between said first ferromagnetic layer and said second ferromagnetic layer, including whether said changeable magnetization state and said fixed magnetization state are parallel or antiparallel. To facilitate writing, the cell is adapted carry at least a portion of a write pulse.

    摘要翻译： 电子自旋基存储单元具有具有可变磁化状态的第一铁磁层和具有固定磁化状态的第二铁磁层。 这种单元的非易失性逻辑状态取决于所述第一铁磁层和所述第二铁磁层之间的关系，包括所述可变磁化状态和所述固定磁化状态是平行还是反平行。 为了便于写入，单元适于携带写入脉冲的至少一部分。

    Magnetoelectronic memory element with inductively coupled write wires
    6.
    发明授权
    Magnetoelectronic memory element with inductively coupled write wires 失效
    具有电感耦合写入线的磁电存储元件

    公开(公告)号：US07016223B2

    公开(公告)日：2006-03-21

    申请号：US11120540

    申请日：2005-05-02

    申请人： Mark B. Johnson

    发明人： Mark B. Johnson

    IPC分类号： G11C11/00

    CPC分类号： H01L43/06 ,  G01R33/06 ,  G01R33/1284 ,  G11B5/378 ,  G11C11/16 ,  G11C11/18 ,  G11C11/5607 ,  H01L27/222 ,  H01L27/224 ,  H01L27/228 ,  H01L29/66984 ,  H03K19/18

    摘要： The magnetization state of a ferromagnetic layer can be set to correspond to different values of a data item to be stored in a hybrid memory device. The magnetization state is non-volatile, and a write circuit can be coupled to the ferromagnetic layer to reset or change the magnetization state to a different value. The write circuit uses a pair of inductively coupled write wires in each row and column, which are each given a signal with an amplitude approximately ½ of that required to change the state of the ferromagnetic layer.

    摘要翻译： 可以将铁磁层的磁化状态设置为对应于要存储在混合存储器件中的数据项的不同值。 磁化状态是非易失性的，并且写入电路可以耦合到铁磁层以将磁化状态重置或改变为不同的值。 写入电路在每行和列中使用一对电感耦合的写入线，每一行和每列赋予一个信号，其幅度大约为改变铁磁层状态所需的1/2的幅度。

    Magnetic memory device structure
    7.
    发明授权
    Magnetic memory device structure 有权
    磁存储器件结构

    公开(公告)号：US07009875B2

    公开(公告)日：2006-03-07

    申请号：US11133518

    申请日：2005-05-19

    申请人： Mark B. Johnson

    发明人： Mark B. Johnson

    IPC分类号： G11C11/00

    CPC分类号： H01L43/06 ,  G01R33/06 ,  G01R33/1284 ,  G11B5/378 ,  G11C11/16 ,  G11C11/18 ,  G11C11/5607 ,  H01L27/222 ,  H01L27/224 ,  H01L27/228 ,  H01L29/66984 ,  H03K19/18

    摘要： Ferromagnetic elements for use with spin memories, logic devices and processing circuits include a geometry incorporating an asymmetry about one axis and in some instances one or more curved sections. Magnetic memory elements can be set out in an array such that convex and concave portions are also optimally arranged about magnetization axes.

    摘要翻译： 用于自旋存储器，逻辑器件和处理电路的铁磁元件包括结合关于一个轴的不对称性的几何形状，并且在一些情况下包括一个或多个弯曲部分。 可以将阵列中的磁存储元件设置成使得凸部和凹部也围绕磁化轴优化地布置。

    Magnetoresistive spin-injection diode
    8.
    发明授权
    Magnetoresistive spin-injection diode 失效
    磁阻自旋注入二极管

    公开(公告)号：US06297987B1

    公开(公告)日：2001-10-02

    申请号：US09408526

    申请日：1999-09-30

    申请人： Mark B. Johnson ,  Brian Bennett ,  Philip R Hammar

    发明人： Mark B. Johnson ,  Brian Bennett ,  Philip R Hammar

    IPC分类号： G11C1100

    CPC分类号： H01L29/66984 ,  G11C11/15

    摘要： A spin injected diode suitable for nonvolatile memory applications is made of a semiconducting channel capable of carrying current, a single ferromagnetic layer, and a barrier layer between the semiconducting channel and the ferromagnetic layer to protect the integrity of the semiconducting layer and to inhibit interdiffusion of the ferromagnetic material and the semiconductor. During diode readout the output modulation of the diode can be sensed either as the interface resistance between the semiconducting channel and the ferromagnetic layer, or as the output voltage between the semiconducting channel and the ferromagnetic layer when flowing current through the channel and not through the interface. Two of these spin injected diodes can be combined to form a spin injected field effect transistor. This transistor has a first ferromagnetic layer having a first coercivity and a second ferromagnetic layer having a second coercivity smaller than the first coercivity which are spaced apart. A gate is situated between the ferromagnetic layers and includes an insulating layer situated below the gate and between the two ferromagnetic layers. A semiconducting channel layer beneath the first and second ferromagnetic layers and beneath the gate forms a low impedance electrical path between the first and second ferromagnetic layers when a control signal is applied to the gate and a high impedance electrical path between these ferromagnetic layers at all other times. A key component is a barrier layer between the semiconducting channel and the two ferromagnetic layers which performs the same functions as in the diode.

    摘要翻译： 适用于非易失性存储器应用的自旋注入二极管由能够承载电流，单个铁磁层以及半导体沟道和铁磁层之间的阻挡层的半导体沟道制成，以保护半导体层的完整性并抑制半导体层的相互扩散 铁磁材料和半导体。 在二极管读数期间，二极管的输出调制可以被感测为半导体沟道和铁磁层之间的界面电阻，或者当流过通道而不是通过界面时半导体沟道和铁磁层之间的输出电压 。 这些自旋注入二极管中的两个可以组合以形成自旋注入的场效应晶体管。 该晶体管具有具有第一矫顽力的第一铁磁层和具有小于间隔开的第一矫顽力的第二矫顽力的第二铁磁层。 栅极位于铁磁层之间，并且包括位于栅极下方和两个铁磁层之间的绝缘层。 当控制信号施加到栅极时，在第一和第二铁磁层下面​​和栅极下方的半导体沟道层在第一和第二铁磁层之间形成低阻抗电路径，以及在所有其它铁磁层之间的这些铁磁层之间的高阻抗电路径 次 关键部件是在半导体通道和两个铁磁层之间的阻挡层，其执行与二极管中相同的功能。

    Magnetic spin injected field effect transistor and method of operation
    9.
    发明授权
    Magnetic spin injected field effect transistor and method of operation 失效

    公开(公告)号：US5654566A

    公开(公告)日：1997-08-05

    申请号：US643804

    申请日：1996-05-06

    申请人： Mark B. Johnson

    发明人： Mark B. Johnson

    IPC分类号： G11B5/37 ,  G11C11/16 ,  G11C11/18 ,  G11C11/56 ,  H01L29/66 ,  H01L43/06 ,  H03K19/18 ,  H01L29/82 ,  H01L43/00

    CPC分类号： G11C11/16 ,  G11C11/18 ,  G11C11/5607 ,  H01L29/66984 ,  H03K19/168 ,  H03K19/18 ,  G11B5/378

    摘要： A new hybrid magnetic spin injected-FET structure can be used as a memory element for the nonvolatile storage of digital information, as well as in other environments, including for example logic applications for performing digital combinational tasks, or a magnetic field sensor. The hybrid FET uses ferromagnetic materials for the source and drain, and like a conventional FET, has two operating states determined by a gate voltage, "off" and "on". The ferromagnetic layers of the hybrid FET are fabricated to permit the device to have two stable magnetization states, parallel and antiparallel. In the "on" state the spin injected FET has two settable, stable resistance states determined by the relative orientation of the magnetizations of the ferromagnetic source and drain. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the drain to be parallel or antiparallel with that of the source, thus changing the resistance of the device to a current of spin polarized electrons injected into the source and flowing to the drain through the channel under the gate. The new FET can be used as a memory cell because the drain magnetization is non-volatile, and can represent a binary data value to be stored in the cell. A conductive write line can be used for inductively coupling an input magnetic field (representing a data value to be stored in the device) with the drain magnetization to alter the orientation state of the latter. An array of spin injected FETs can be coupled together in an array to form a new hybrid FET memory array. The new FET can also be used as a logic gate that stores the result of a boolean function. A magnetic field generated by the combined current of one or more input data signals is coupled to the spin injected FET. Depending on the particular function to be implemented, the ferromagnetic drain magnetization can be configured to change or retain its orientation based on particular predefined combinations of input data signals.

    MICROSENSOR CHEMICAL DETECTION SYSTEM & ELEMENTS
    10.
    发明申请
    MICROSENSOR CHEMICAL DETECTION SYSTEM & ELEMENTS 审中-公开

    公开(公告)号：US20190154610A1

    公开(公告)日：2019-05-23

    申请号：US16196596

    申请日：2018-11-20

    申请人： Mark B. Johnson

    发明人： Mark B. Johnson

    IPC分类号： G01N27/12

    摘要： A chemical detection system includes microsensor elements adapted to detect target chemical and/or target environmental conditions. The microsensor elements can be fabricated on a single semiconductor chip, and include carbon nanotubes, magnetoelectronic processing components, non-volatile memory, and micromechanical structures for controlling an expression of a readout substance.