公开(公告)号：US20070077355A1

公开(公告)日：2007-04-05

申请号：US11242298

申请日：2005-09-30

申请人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

发明人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

IPC分类号： C23C16/00

CPC分类号： C23C16/481 ,  C23C16/52

摘要： A film formation system 10 has a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, the top cover 11 has a reflective surface 13 for reflecting radiant energy back onto a substrate 19, pyrometers 405 for measuring the temperature of the substrate 19 across a number of zones, and at least one emissometer 410 for measuring the actual emissivity of the substrate 19. In another embodiment, a radiant heating system 313 is disposed under the substrate support 16. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 405, and the emissometer 410.

摘要翻译： 成膜系统10具有由侧壁18和顶盖11限定的处理室15.在一个实施例中，顶盖11具有用于将辐射能量反射回到基板19上的反射表面13，用于测量温度 穿过多个区域的基板19以及用于测量基板19的实际发射率的至少一个辐射计410。 在另一个实施例中，辐射加热系统313设置在基板支撑件16的下方。 基底19的温度由来自高温计405和em值计410的高温测量数据获得。

公开(公告)号：US20070074665A1

公开(公告)日：2007-04-05

申请号：US11242299

申请日：2005-09-30

申请人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

发明人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

IPC分类号： C23C16/00

CPC分类号： C23C16/46 ,  C23C16/481 ,  C23C16/52

摘要： A film formation system 10 includes a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, a susceptor 16 is rotatably disposed in the system 10, and overlaps with a first peripheral member 205 disposed around the sidewalls 18. A radiant heating system 313 is disposed under the susceptor 305 to heat the substrate 19. In another embodiment, the top cover 11 has equally spaced pyrometers 58 for measuring the temperature of the substrate 19 across a number of zones. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 58.

摘要翻译： 成膜系统10包括由侧壁18和顶盖11限定的处理室15。 在一个实施例中，基座16可旋转地设置在系统10中，并与设置在侧壁18周围的第一周边构件205重叠。 辐射加热系统313设置在基座305的下方以加热基板19。 在另一个实施例中，顶盖11具有相等间隔的高温计58，用于测量跨越多个区域的基底19的温度。 基板19的温度由来自高温计58的高温测量数据获得。

公开(公告)号：US08372203B2

公开(公告)日：2013-02-12

申请号：US11242299

申请日：2005-09-30

申请人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger N. Anderson

发明人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger N. Anderson

IPC分类号： C23C16/48 ,  C23C16/46 ,  C23C16/458 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/46 ,  C23C16/481 ,  C23C16/52

摘要： A film formation system 10 includes a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, a susceptor 16 is rotatably disposed in the system 10, and overlaps with a first peripheral member 205 disposed around the sidewalls 18. A radiant heating system 313 is disposed under the susceptor 305 to heat the substrate 19. In another embodiment, the top cover 11 has equally spaced pyrometers 58 for measuring the temperature of the substrate 19 across a number of zones. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 58.

摘要翻译： 成膜系统10包括由侧壁18和顶盖11限定的处理室15.在一个实施例中，基座16可旋转地设置在系统10中，并且与设置在侧壁18周围的第一周边构件205重叠。 辐射加热系统313设置在基座305下方以加热基板19.在另一个实施例中，顶盖11具有相等间隔的高温计58，用于测量跨越多个区域的基板19的温度。 基板19的温度由来自高温计58的高温测量数据获得。

公开(公告)号：US07691204B2

公开(公告)日：2010-04-06

申请号：US11242298

申请日：2005-09-30

申请人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger N. Anderson

发明人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger N. Anderson

IPC分类号： C23C16/00 ,  C23C16/46 ,  C23C16/52 ,  H01L21/306

CPC分类号： C23C16/481 ,  C23C16/52

摘要： A film formation system 10 has a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, the top cover 11 has a reflective surface 13 for reflecting radiant energy back onto a substrate 19, pyrometers 405 for measuring the temperature of the substrate 19 across a number of zones, and at least one emissometer 410 for measuring the actual emissivity of the substrate 19. In another embodiment, a radiant heating system 313 is disposed under the substrate support 16. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 405, and the emissometer 410.

摘要翻译： 成膜系统10具有由侧壁18和顶盖11限定的处理室15.在一个实施例中，顶盖11具有用于将辐射能量反射回到基板19上的反射表面13，用于测量温度 穿过多个区域的基板19和用于测量基板19的实际发射率的至少一个辐射计410.在另一实施例中，辐射加热系统313设置在基板支撑件16下方。获得基板19的温度 来自高温计405的高温测量数据和发射计410。

公开(公告)号：US20080069951A1

公开(公告)日：2008-03-20

申请号：US11521856

申请日：2006-09-15

申请人： Juan Chacin ,  Roger Anderson ,  Kailash Patalay ,  Craig Metzner

发明人： Juan Chacin ,  Roger Anderson ,  Kailash Patalay ,  Craig Metzner

IPC分类号： C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/4585 ,  H01L21/68728 ,  H01L21/68735

摘要： According to one aspect of the invention, an apparatus for reducing auto-doping of the front side of a substrate and reducing defects on the backside of the substrate during an epitaxial deposition process for forming an epitaxial layer on the front side of the substrate comprising: a means for forming a wafer gap region between the backside of the substrate and a susceptor plate, having an adjustable thickness; a means for ventilating auto-dopants out of the wafer gap region with a flow of inert gas, while inhibiting or prohibiting the flow of inert gas over the front side of the substrate; and a means for flowing reactant gases over the surface of the front side of the substrate, while inhibiting or prohibiting the flow of reactant gases near the surface of the backside of the substrate.

摘要翻译： 根据本发明的一个方面，一种用于在衬底的前侧形成外延层的外延沉积工艺期间减少衬底的正面的自动掺杂并减少衬底背面的缺陷的装置，包括： 用于在基板的背面和具有可调节厚度的基座板之间形成晶片间隙区域的装置; 一种用惰性气体流动自由掺杂剂离开晶片间隙区域的方法，同时抑制或阻止惰性气体流过衬底的前侧; 以及用于使反应气体流过衬底前表面的装置，同时抑制或禁止靠近衬底背面表面的反应气流。

公开(公告)号：US20080072820A1

公开(公告)日：2008-03-27

申请号：US11767619

申请日：2007-06-25

申请人： Brian Burrows ,  Craig Metzner ,  Dennis Demars ,  Roger Anderson ,  Juan Chacin ,  David Carlson ,  David Ishikawa ,  Jeffrey Campbell ,  Richard Collins ,  Keith Magill ,  Imran Afzal

发明人： Brian Burrows ,  Craig Metzner ,  Dennis Demars ,  Roger Anderson ,  Juan Chacin ,  David Carlson ,  David Ishikawa ,  Jeffrey Campbell ,  Richard Collins ,  Keith Magill ,  Imran Afzal

IPC分类号： B05C11/00

CPC分类号： H01L21/67115 ,  H01L21/67017 ,  H01L21/6719

摘要： The present invention provides methods and apparatus for processing semiconductor substrates. Particularly, the present invention provides a modular processing cell to be used in a cluster tool. The modular semiconductor processing cell of the present invention comprises a chamber having an inject cap, a gas panel module configured to supply one or more processing gas to the chamber through the inject cap, wherein the gas panel module is position adjacent the inject cap. The processing cell further comprises a lamp module positioned below the chamber. The lamp module comprises a plurality of vertically oriented lamps.

摘要翻译： 本发明提供了半导体衬底的处理方法和装置。 特别地，本发明提供了一种在群集工具中使用的模块化处理单元。 本发明的模块化半导体处理单元包括具有注入盖的腔室，配置成通过喷射盖向腔室供应一种或多种处理气体的气体面板模块，其中气体面板模块位于与喷射盖相邻的位置。 处理室还包括位于室下方的灯模块。 灯模块包括多个垂直取向的灯。

公开(公告)号：US08852349B2

公开(公告)日：2014-10-07

申请号：US11521856

申请日：2006-09-15

申请人： Juan Chacin ,  Roger Anderson ,  Kailash Patalay ,  Craig Metzner

发明人： Juan Chacin ,  Roger Anderson ,  Kailash Patalay ,  Craig Metzner

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/458 ,  H01L21/687 ,  C23C16/455

CPC分类号： C23C16/45521 ,  C23C16/4585 ,  H01L21/68728 ,  H01L21/68735

摘要： According to one aspect of the invention, an apparatus for reducing auto-doping of the front side of a substrate and reducing defects on the backside of the substrate during an epitaxial deposition process for forming an epitaxial layer on the front side of the substrate comprising: a means for forming a wafer gap region between the backside of the substrate and a susceptor plate, having an adjustable thickness; a means for ventilating auto-dopants out of the wafer gap region with a flow of inert gas, while inhibiting or prohibiting the flow of inert gas over the front side of the substrate; and a means for flowing reactant gases over the surface of the front side of the substrate, while inhibiting or prohibiting the flow of reactant gases near the surface of the backside of the substrate.

摘要翻译： 根据本发明的一个方面，一种用于在衬底的前侧形成外延层的外延沉积工艺期间减少衬底的正面的自动掺杂并减少衬底背面的缺陷的装置，包括： 用于在基板的背面和具有可调节厚度的基座板之间形成晶片间隙区域的装置; 一种用惰性气体流动自由掺杂剂离开晶片间隙区域的方法，同时抑制或阻止惰性气体流过衬底的前侧; 以及用于使反应气体流过衬底前表面的装置，同时抑制或禁止靠近衬底背面表面的反应气流。

公开(公告)号：US08735772B2

公开(公告)日：2014-05-27

申请号：US13031232

申请日：2011-02-20

申请人： Juan Chacin ,  Irving Chyr ,  Jonathan Halderman

发明人： Juan Chacin ,  Irving Chyr ,  Jonathan Halderman

IPC分类号： B23K26/00 ,  H01L21/00

CPC分类号： B23K26/364 ,  B23K26/035 ,  B23K26/0624 ,  B23K26/0853 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01S5/0201

摘要： Disclosed are laser scribing systems for laser scribing semiconductor substrates with backside coatings. In particular these laser scribing systems laser scribe opto-electric semiconductor wafers with reflective backside coatings so as to avoid damage to the opto-electric device while maintaining efficient manufacturing. In more particular these laser scribing systems employ ultrafast pulsed lasers at wavelength in the visible region and below in multiple passes to remove the backside coatings and scribe the wafer.

摘要翻译： 公开了用于具有背面涂层的激光划片半导体衬底的激光划线系统。 特别地，这些激光划片系统激光刻划具有反射背面涂层的光电半导体晶片，以避免损坏光电装置，同时保持有效的制造。 更具体地说，这些激光划线系统在多次通过中在可见光区域和下方的波长处采用超快速脉冲激光器以去除背面涂层并刻划晶片。

公开(公告)号：US20120211477A1

公开(公告)日：2012-08-23

申请号：US13031232

申请日：2011-02-20

申请人： Juan Chacin ,  Irving Chyr ,  Jonathan Halderman

发明人： Juan Chacin ,  Irving Chyr ,  Jonathan Halderman

IPC分类号： B23K26/36 ,  B23K26/08

CPC分类号： B23K26/364 ,  B23K26/035 ,  B23K26/0624 ,  B23K26/0853 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01S5/0201

摘要： Disclosed are laser scribing systems for laser scribing semiconductor substrates with backside coatings. In particular these laser scribing systems laser scribe opto-electric semiconductor wafers with reflective backside coatings so as to avoid damage to the opto-electric device while maintaining efficient manufacturing. In more particular these laser scribing systems employ ultrafast pulsed lasers at wavelength in the visible region and below in multiple passes to remove the backside coatings and scribe the wafer.

摘要翻译： 公开了用于具有背面涂层的激光划片半导体衬底的激光划线系统。 特别地，这些激光划片系统激光刻划具有反射背面涂层的光电半导体晶片，以避免损坏光电装置，同时保持有效的制造。 更具体地说，这些激光划线系统在多次通过中在可见光区域和下方的波长处采用超快速脉冲激光器以去除背面涂层并刻划晶片。

公开(公告)号：US20120175652A1

公开(公告)日：2012-07-12

申请号：US12985904

申请日：2011-01-06

申请人： Irving Chyr ,  Jonathan Halderman ,  Juan Chacin

发明人： Irving Chyr ,  Jonathan Halderman ,  Juan Chacin

IPC分类号： H01L33/22 ,  B23K26/00 ,  H01L21/268

CPC分类号： B23K26/042 ,  B23K26/0624 ,  B23K26/083 ,  B23K26/142 ,  B23K26/355 ,  B23K26/359 ,  B23K26/40 ,  B23K2103/50 ,  H01L33/0095

摘要： The present invention is a system and method for laser-assisted singulation of light emitting electronic devices manufactured on a substrate, having a processing surface and a depth extending from the processing surface. It includes providing a laser processing system having a picosecond laser having controllable parameters; controlling the laser parameters to form light pulses from the picosecond laser, to form a modified region having a depth which spans about 50% of the depth and substantially including the processing surface of the substrate and having a width less than about 5% of the region depth; and, singulating the substrate by applying mechanical stress to the substrate thereby cleaving the substrate into said light emitting electronic devices having sidewalls formed at least partially in cooperation with the linear modified regions.

摘要翻译： 本发明是一种用于激光辅助单片化制造在基板上的发光电子装置的系统和方法，其具有从处理表面延伸的处理表面和深度。 它包括提供具有可控参数的皮秒激光的激光处理系统; 控制激光参数以形成来自皮秒激光的光脉冲，以形成具有跨越深度的约50％的深度并且基本上包括衬底的处理表面并且具有小于该区域的约5％的宽度的改变区域 深度; 以及通过对衬底施加机械应力，从而将衬底切割成具有至少部分地与线性改性区域配合的侧壁的所述发光电子器件，从而对衬底进行单片化。