公开(公告)号：US20070077355A1

公开(公告)日：2007-04-05

申请号：US11242298

申请日：2005-09-30

申请人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

发明人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

IPC分类号： C23C16/00

CPC分类号： C23C16/481 ,  C23C16/52

摘要： A film formation system 10 has a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, the top cover 11 has a reflective surface 13 for reflecting radiant energy back onto a substrate 19, pyrometers 405 for measuring the temperature of the substrate 19 across a number of zones, and at least one emissometer 410 for measuring the actual emissivity of the substrate 19. In another embodiment, a radiant heating system 313 is disposed under the substrate support 16. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 405, and the emissometer 410.

摘要翻译： 成膜系统10具有由侧壁18和顶盖11限定的处理室15.在一个实施例中，顶盖11具有用于将辐射能量反射回到基板19上的反射表面13，用于测量温度 穿过多个区域的基板19以及用于测量基板19的实际发射率的至少一个辐射计410。 在另一个实施例中，辐射加热系统313设置在基板支撑件16的下方。 基底19的温度由来自高温计405和em值计410的高温测量数据获得。

公开(公告)号：US20070074665A1

公开(公告)日：2007-04-05

申请号：US11242299

申请日：2005-09-30

申请人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

发明人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

IPC分类号： C23C16/00

CPC分类号： C23C16/46 ,  C23C16/481 ,  C23C16/52

摘要： A film formation system 10 includes a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, a susceptor 16 is rotatably disposed in the system 10, and overlaps with a first peripheral member 205 disposed around the sidewalls 18. A radiant heating system 313 is disposed under the susceptor 305 to heat the substrate 19. In another embodiment, the top cover 11 has equally spaced pyrometers 58 for measuring the temperature of the substrate 19 across a number of zones. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 58.

摘要翻译： 成膜系统10包括由侧壁18和顶盖11限定的处理室15。 在一个实施例中，基座16可旋转地设置在系统10中，并与设置在侧壁18周围的第一周边构件205重叠。 辐射加热系统313设置在基座305的下方以加热基板19。 在另一个实施例中，顶盖11具有相等间隔的高温计58，用于测量跨越多个区域的基底19的温度。 基板19的温度由来自高温计58的高温测量数据获得。

公开(公告)号：US08372203B2

公开(公告)日：2013-02-12

申请号：US11242299

申请日：2005-09-30

申请人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger N. Anderson

发明人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger N. Anderson

IPC分类号： C23C16/48 ,  C23C16/46 ,  C23C16/458 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/46 ,  C23C16/481 ,  C23C16/52

摘要： A film formation system 10 includes a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, a susceptor 16 is rotatably disposed in the system 10, and overlaps with a first peripheral member 205 disposed around the sidewalls 18. A radiant heating system 313 is disposed under the susceptor 305 to heat the substrate 19. In another embodiment, the top cover 11 has equally spaced pyrometers 58 for measuring the temperature of the substrate 19 across a number of zones. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 58.

摘要翻译： 成膜系统10包括由侧壁18和顶盖11限定的处理室15.在一个实施例中，基座16可旋转地设置在系统10中，并且与设置在侧壁18周围的第一周边构件205重叠。 辐射加热系统313设置在基座305下方以加热基板19.在另一个实施例中，顶盖11具有相等间隔的高温计58，用于测量跨越多个区域的基板19的温度。 基板19的温度由来自高温计58的高温测量数据获得。

公开(公告)号：US07691204B2

公开(公告)日：2010-04-06

申请号：US11242298

申请日：2005-09-30

申请人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger N. Anderson

发明人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger N. Anderson

IPC分类号： C23C16/00 ,  C23C16/46 ,  C23C16/52 ,  H01L21/306

CPC分类号： C23C16/481 ,  C23C16/52

摘要： A film formation system 10 has a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, the top cover 11 has a reflective surface 13 for reflecting radiant energy back onto a substrate 19, pyrometers 405 for measuring the temperature of the substrate 19 across a number of zones, and at least one emissometer 410 for measuring the actual emissivity of the substrate 19. In another embodiment, a radiant heating system 313 is disposed under the substrate support 16. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 405, and the emissometer 410.

摘要翻译： 成膜系统10具有由侧壁18和顶盖11限定的处理室15.在一个实施例中，顶盖11具有用于将辐射能量反射回到基板19上的反射表面13，用于测量温度 穿过多个区域的基板19和用于测量基板19的实际发射率的至少一个辐射计410.在另一实施例中，辐射加热系统313设置在基板支撑件16下方。获得基板19的温度 来自高温计405的高温测量数据和发射计410。

公开(公告)号：US20080072820A1

公开(公告)日：2008-03-27

申请号：US11767619

申请日：2007-06-25

申请人： Brian Burrows ,  Craig Metzner ,  Dennis Demars ,  Roger Anderson ,  Juan Chacin ,  David Carlson ,  David Ishikawa ,  Jeffrey Campbell ,  Richard Collins ,  Keith Magill ,  Imran Afzal

发明人： Brian Burrows ,  Craig Metzner ,  Dennis Demars ,  Roger Anderson ,  Juan Chacin ,  David Carlson ,  David Ishikawa ,  Jeffrey Campbell ,  Richard Collins ,  Keith Magill ,  Imran Afzal

IPC分类号： B05C11/00

CPC分类号： H01L21/67115 ,  H01L21/67017 ,  H01L21/6719

摘要： The present invention provides methods and apparatus for processing semiconductor substrates. Particularly, the present invention provides a modular processing cell to be used in a cluster tool. The modular semiconductor processing cell of the present invention comprises a chamber having an inject cap, a gas panel module configured to supply one or more processing gas to the chamber through the inject cap, wherein the gas panel module is position adjacent the inject cap. The processing cell further comprises a lamp module positioned below the chamber. The lamp module comprises a plurality of vertically oriented lamps.

摘要翻译： 本发明提供了半导体衬底的处理方法和装置。 特别地，本发明提供了一种在群集工具中使用的模块化处理单元。 本发明的模块化半导体处理单元包括具有注入盖的腔室，配置成通过喷射盖向腔室供应一种或多种处理气体的气体面板模块，其中气体面板模块位于与喷射盖相邻的位置。 处理室还包括位于室下方的灯模块。 灯模块包括多个垂直取向的灯。

公开(公告)号：US20080069951A1

公开(公告)日：2008-03-20

申请号：US11521856

申请日：2006-09-15

申请人： Juan Chacin ,  Roger Anderson ,  Kailash Patalay ,  Craig Metzner

发明人： Juan Chacin ,  Roger Anderson ,  Kailash Patalay ,  Craig Metzner

IPC分类号： C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/4585 ,  H01L21/68728 ,  H01L21/68735

摘要： According to one aspect of the invention, an apparatus for reducing auto-doping of the front side of a substrate and reducing defects on the backside of the substrate during an epitaxial deposition process for forming an epitaxial layer on the front side of the substrate comprising: a means for forming a wafer gap region between the backside of the substrate and a susceptor plate, having an adjustable thickness; a means for ventilating auto-dopants out of the wafer gap region with a flow of inert gas, while inhibiting or prohibiting the flow of inert gas over the front side of the substrate; and a means for flowing reactant gases over the surface of the front side of the substrate, while inhibiting or prohibiting the flow of reactant gases near the surface of the backside of the substrate.

摘要翻译： 根据本发明的一个方面，一种用于在衬底的前侧形成外延层的外延沉积工艺期间减少衬底的正面的自动掺杂并减少衬底背面的缺陷的装置，包括： 用于在基板的背面和具有可调节厚度的基座板之间形成晶片间隙区域的装置; 一种用惰性气体流动自由掺杂剂离开晶片间隙区域的方法，同时抑制或阻止惰性气体流过衬底的前侧; 以及用于使反应气体流过衬底前表面的装置，同时抑制或禁止靠近衬底背面表面的反应气流。

公开(公告)号：US08852349B2

公开(公告)日：2014-10-07

申请号：US11521856

申请日：2006-09-15

申请人： Juan Chacin ,  Roger Anderson ,  Kailash Patalay ,  Craig Metzner

发明人： Juan Chacin ,  Roger Anderson ,  Kailash Patalay ,  Craig Metzner

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/458 ,  H01L21/687 ,  C23C16/455

CPC分类号： C23C16/45521 ,  C23C16/4585 ,  H01L21/68728 ,  H01L21/68735

摘要： According to one aspect of the invention, an apparatus for reducing auto-doping of the front side of a substrate and reducing defects on the backside of the substrate during an epitaxial deposition process for forming an epitaxial layer on the front side of the substrate comprising: a means for forming a wafer gap region between the backside of the substrate and a susceptor plate, having an adjustable thickness; a means for ventilating auto-dopants out of the wafer gap region with a flow of inert gas, while inhibiting or prohibiting the flow of inert gas over the front side of the substrate; and a means for flowing reactant gases over the surface of the front side of the substrate, while inhibiting or prohibiting the flow of reactant gases near the surface of the backside of the substrate.

摘要翻译： 根据本发明的一个方面，一种用于在衬底的前侧形成外延层的外延沉积工艺期间减少衬底的正面的自动掺杂并减少衬底背面的缺陷的装置，包括： 用于在基板的背面和具有可调节厚度的基座板之间形成晶片间隙区域的装置; 一种用惰性气体流动自由掺杂剂离开晶片间隙区域的方法，同时抑制或阻止惰性气体流过衬底的前侧; 以及用于使反应气体流过衬底前表面的装置，同时抑制或禁止靠近衬底背面表面的反应气流。

公开(公告)号：US08524555B2

公开(公告)日：2013-09-03

申请号：US13530238

申请日：2012-06-22

申请人： Errol Sanchez ,  David K. Carlson ,  Craig Metzner

发明人： Errol Sanchez ,  David K. Carlson ,  Craig Metzner

IPC分类号： H01L21/8238

CPC分类号： H01L21/68757 ,  C23C16/4581 ,  C23C16/481 ,  C23C16/52

摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are described. Provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; and locating the wafer on a support surface of the susceptor plate. The method can further comprise selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method can also further comprise selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.

摘要翻译： 描述了用于提供感受器背面恒定发射率的方法和装置。 提供了一种方法，包括：在沉积室中提供感受器，所述基座包括基座板和包括氧化物，氮化物，氮氧化物或其组合的层，所述层在反应性工艺气体存在下是稳定的; 以及将所述晶片定位在所述基座板的支撑表面上。 该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。 该方法还可以进一步包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

公开(公告)号：US20080274604A1

公开(公告)日：2008-11-06

申请号：US11744760

申请日：2007-05-04

申请人： Errol Sanchez ,  David Carlson ,  Craig Metzner

发明人： Errol Sanchez ,  David Carlson ,  Craig Metzner

IPC分类号： H01L21/20 ,  C23C16/00

CPC分类号： H01L21/68757 ,  C23C16/4581 ,  C23C16/481 ,  C23C16/52

摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are provided. Provided is a susceptor comprising: a susceptor plate having a surface for supporting a wafer and a backside surface opposite the wafer supporting surface; a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof located on the backside surface of the susceptor plate, the layer being stable in the presence of a reactive process gas. The layer comprises, for example, silicon dioxide, silicon nitride, silicon oxynitride, or combinations thereof. Also provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; locating the wafer on a support surface of the susceptor plate. The method can further comprises selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method further comprises selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.

摘要翻译： 提供了用于提供感受器背面恒定发射率的方法和装置。 本发明提供一种基座，其特征在于，包括：具有用于支撑晶片的表面的基座板和与所述晶片支撑面相对的背面; 位于基座板的背面上的包含氧化物，氮化物，氧氮化物或其组合的层，该层在反应性工艺气体存在下是稳定的。 该层包括例如二氧化硅，氮化硅，氮氧化硅或其组合。 还提供了一种方法，其包括：在沉积室中提供感受器，所述基座包括基座板和包含氧化物，氮化物，氧氮化物或其组合的层，所述层在反应性工艺气体存在下是稳定的 ; 将晶片定位在基座板的支撑表面上。 该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。 该方法还包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

公开(公告)号：US20070059948A1

公开(公告)日：2007-03-15

申请号：US11421293

申请日：2006-05-31

申请人： Craig Metzner ,  Shreyas Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram Athreya

发明人： Craig Metzner ,  Shreyas Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram Athreya

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： H01L21/02181 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/318

摘要： Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer deposition (ALD) processes. In one embodiment, an ALD chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal. During an ALD process for forming hafnium materials, process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface. The substrate is sequentially exposed to chemical precursors that are pulsed into the process chamber having the vortex flow.

摘要翻译： 本发明的实施方案通过将底物顺序地暴露于铪前体和活性氧或氮物质（例如臭氧，氧自由基或氮自由基）来提供用于形成铪材料如氧化物和氮化物的方法。 当通过这些原子层沉积（ALD）工艺沉积时，沉积的铪材料具有显着改善的均匀性。 在一个实施例中，ALD室包含具有底表面的扩张通道，该底表面的尺寸和形状基本上覆盖位于基板基座上的基板。 在用于形成铪材料的ALD工艺中，工艺气体在通过扩张通道并形成衬底表面时形成涡流模式。 将衬底依次暴露于脉冲进入具有涡流的处理室的化学前体。