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公开(公告)号：US4927059A
公开(公告)日：1990-05-22
申请号：US279480
申请日：1988-12-02
CPC分类号： B05B11/3015 , B05B11/0078 , B05B11/3074
摘要： A device for dispensing a striped mixture of two components of a paste-like flowable substance includes a lower container in which one of the components is retained. A dosing unit mounted on the container, includes a pushbutton which is depressed for forcing the first component from the container through a set of valves into a compartment of the dosing unit, through a centrally located tubular element within the compartment, and out of an upper outlet for dispensement from the device. The interior of the compartment between the tubular element is filled with a second component, which is forced upward by the first component entering the compartment, and into the tubular element via openings therethrough, for mixing with the first component as it moves through the tubular element and out of the outlet, for dispensing a striped mixture of the first and second components. The combination of the compartment and tubular element are replaceable as a module on the dosing unit, for selectively providing different second components for striping with the first component.
摘要翻译： 用于分配糊状可流动物质的两个部件的条纹混合物的装置包括其中保持一个部件的下部容器。 安装在容器上的计量单元包括按钮，该按钮用于迫使第一部件从容器通过一组阀通过定量给料单元的隔室，通过隔室内的位于中心的管状元件，并从上部 插座从设备分配。 管状元件之间的隔室的内部填充有第二部件，第二部件被第一部件向上压入隔室，并且经由其中的开口进入管状元件，用于当第一部件移动穿过管状元件时与第一部件混合 并且从出口出来，用于分配第一和第二部件的条纹混合物。 隔室和管状元件的组合可替换为计量单元上的模块，用于选择性地提供用于与第一部件分条的不同的第二部件。
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公开(公告)号：US08759868B2
公开(公告)日：2014-06-24
申请号：US13271865
申请日：2011-10-12
申请人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
发明人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
CPC分类号： H01L33/42 , H01L24/32 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48463 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2933/0016 , H01L2924/00
摘要： A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.
摘要翻译： 基于倒装芯片半导体的发光器件（LED）可以在衬底上包括n型半导体衬底和n型GaN外延层。 p型GaN外延层可以在n型GaN外延层上，并且金属欧姆接触p电极可以在p型GaN外延层上，其中金属欧姆接触p电极可以具有 平均厚度小于约25埃。 反射器可以在金属欧姆接触p电极上，金属堆叠可以在反射器上。 n电极可以在与n型GaN外延层相对的衬底上，并且焊盘可以在n电极上。
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公开(公告)号：USD689830S1
公开(公告)日：2013-09-17
申请号：US29383908
申请日：2011-01-24
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公开(公告)号：USD682225S1
公开(公告)日：2013-05-14
申请号：US29383910
申请日：2011-01-24
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公开(公告)号：USD675581S1
公开(公告)日：2013-02-05
申请号：US29396907
申请日：2011-07-08
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公开(公告)号：US20120080688A1
公开(公告)日：2012-04-05
申请号：US13271865
申请日：2011-10-12
申请人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
发明人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
CPC分类号： H01L33/42 , H01L24/32 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48463 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2933/0016 , H01L2924/00
摘要： A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.
摘要翻译： 基于倒装芯片半导体的发光器件（LED）可以在衬底上包括n型半导体衬底和n型GaN外延层。 p型GaN外延层可以在n型GaN外延层上，并且金属欧姆接触p电极可以在p型GaN外延层上，其中金属欧姆接触p电极可以具有 平均厚度小于约25埃。 反射器可以在金属欧姆接触p电极上，金属堆叠可以在反射器上。 n电极可以在与n型GaN外延层相对的衬底上，并且焊盘可以在n电极上。
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公开(公告)号：US08089090B2
公开(公告)日：2012-01-03
申请号：US11191111
申请日：2005-07-27
申请人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
发明人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
IPC分类号： H01L29/22
CPC分类号： H01L33/42 , H01L24/32 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48463 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2933/0016 , H01L2924/00
摘要： A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2.
摘要翻译： 基于半导体的发光器件（LED）可以在p型氮化物层上包括p型氮化物层和金属欧姆接触。 金属欧姆接触可以具有小于约的平均厚度和小于约10-3欧姆 - 厘米2的特定接触电阻。
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公开(公告)号：US20110262481A1
公开(公告)日：2011-10-27
申请号：US13140395
申请日：2009-12-18
申请人： Thomas Muster , Markus Wolschek , Andrej Egorov , Elisabeth Roethl , Julia Romanova , Michael Bergmann
发明人： Thomas Muster , Markus Wolschek , Andrej Egorov , Elisabeth Roethl , Julia Romanova , Michael Bergmann
IPC分类号： A61K39/145 , A61P37/04 , A61P31/16 , C12N7/01 , C12N9/12
CPC分类号： C12N7/00 , A61K39/12 , A61K39/145 , A61K2039/525 , C07K14/005 , C12N2760/16122 , C12N2760/16134 , C12N2760/16151
摘要： The present invention provides a high growth reassortant influenza A virus having at least two gene segments of seasonal or pandemic strain origin, a PB1 gene segment of A/Texas/1/77 strain origin and a PA gene segment of A/Puerto Rico/8/34 (H1N1) origin coding for a PA protein comprising at least one amino acid modification at any one of positions 10, 275, 682, according to SEQ ID No.1. Further provided are vaccine formulations comprising the reassortant influenza A virus of the invention.
摘要翻译： 本发明提供了具有至少两个季节性或大流行菌株起源的基因片段，A / Texas / 1/77株源的PB1基因片段和A / Puerto Rico / 8的PA基因片段的高生长重配甲型流感病毒 / 34（H1N1）来源编码PA蛋白，其包含根据SEQ ID No.1的位置10,275,682中的任一个的至少一个氨基酸修饰。 还提供了包含本发明的重配甲型流感病毒的疫苗制剂。
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公开(公告)号：US08044425B2
公开(公告)日：2011-10-25
申请号：US11191111
申请日：2005-07-27
申请人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
发明人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
IPC分类号： H01L29/22
摘要： A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2.
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公开(公告)号：US5018527A
公开(公告)日：1991-05-28
申请号：US226066
申请日：1988-07-28
IPC分类号： A61B5/145 , A61B5/00 , A61B5/1477 , G01N27/333 , G01N27/403 , G01N27/416
CPC分类号： A61B5/1495 , G01N27/3335
摘要： A sensor for measuring the activity of ions by means of ion-selective membranes (4) improves the measuring possibilities and reduces the dimensions of the sensor in that a plurality of such membranes are held in a common carrier (3) and are electrically insulated and protected against the penetration of moisture. Shunts (2) are provided in a sensor body (1) of the carrier. The carrier and sensor body are connected to one another. The invention is also directed to a method for producing such a sensor. Moreover, the invention is concerned with sensors and a respective arrangement for hemodialysis.
摘要翻译： 用于通过离子选择膜（4）测量离子的活性的传感器改善了测量的可能性并且减小了传感器的尺寸，因为多个这样的膜被保持在公共载体（3）中并被电绝缘， 防止潮湿的渗透。 分流器（2）设置在载体的传感器主体（1）中。 载体和传感器体彼此连接。 本发明还涉及一种用于制造这种传感器的方法。 此外，本发明涉及用于血液透析的传感器和相应的装置。
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