-
公开(公告)号：US08241991B2
公开(公告)日：2012-08-14
申请号：US12718731
申请日：2010-03-05
IPC分类号： H01L21/76
CPC分类号： H01L21/768
摘要： A method for forming an interconnect structure with airgaps, includes: providing a structure having a trench formed on a substrate; depositing a spacer oxide layer on sidewalls of the trench as sidewall spacers by plasma enhanced atomic layer deposition; filling the trench having the sidewall spacers with copper; removing the sidewall spacers to form an airgap structure; and encapsulating the airgap structure, wherein airgaps are formed between the filled copper and the sidewalls of the trench.
摘要翻译： 一种用气隙形成互连结构的方法，包括：提供在衬底上形成沟槽的结构; 通过等离子体增强的原子层沉积在沟槽的侧壁上沉积间隔氧化物层作为侧壁间隔物; 用铜填充具有侧壁间隔物的沟槽; 去除侧壁间隔件以形成气隙结构; 并且封装气隙结构，其中在填充的铜和沟槽的侧壁之间形成气隙。
-
公开(公告)号：US20110217838A1
公开(公告)日：2011-09-08
申请号：US12718731
申请日：2010-03-05
IPC分类号： H01L21/768
CPC分类号： H01L21/768
摘要： A method for forming an interconnect structure with airgaps, includes: providing a structure having a trench formed on a substrate; depositing a spacer oxide layer on sidewalls of the trench as sidewall spacers by plasma enhanced atomic layer deposition; filling the trench having the sidewall spacers with copper; removing the sidewall spacers to form an airgap structure; and encapsulating the airgap structure, wherein airgaps are formed between the filled copper and the sidewalls of the trench.
摘要翻译： 一种用气隙形成互连结构的方法，包括：提供在衬底上形成沟槽的结构; 通过等离子体增强的原子层沉积在沟槽的侧壁上沉积间隔氧化物层作为侧壁间隔物; 用铜填充具有侧壁间隔物的沟槽; 去除侧壁间隔件以形成气隙结构; 并且封装气隙结构，其中在填充的铜和沟槽的侧壁之间形成气隙。
-
公开(公告)号：US20100124618A1
公开(公告)日：2010-05-20
申请号：US12618419
申请日：2009-11-13
IPC分类号： B05D3/04
CPC分类号： C23C16/45542 , C23C16/345 , C23C16/56
摘要： A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.
摘要翻译： 基于脉冲CVD或ALD的成膜循环重复多次以形成单层绝缘膜，而在上述过程中重整循环是每个成膜循环一次或多次，通过处理 使用已经被等离子体激活的处理气体形成膜。
-
公开(公告)号：US08647722B2
公开(公告)日：2014-02-11
申请号：US12618419
申请日：2009-11-13
IPC分类号： H05H1/24
CPC分类号： C23C16/45542 , C23C16/345 , C23C16/56
摘要： A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.
摘要翻译： 基于脉冲CVD或ALD的成膜循环重复多次以形成单层绝缘膜，而在上述过程中重整循环是每个成膜循环一次或多次，通过处理 使用已经被等离子体激活的处理气体形成膜。
-
5.发明授权Method of forming silicon-containing insulation film having low dielectric constant and high mechanical strength 有权形成具有低介电常数和高机械强度的含硅绝缘膜的方法公开(公告)号：US06818570B2
公开(公告)日：2004-11-16
申请号：US10351669
申请日：2003-01-24
申请人： Naoto Tsuji , Yukihiro Mori , Satoshi Takahashi , Kiyohiro Matsushita , Atsuki Fukazawa , Michael Todd
发明人： Naoto Tsuji , Yukihiro Mori , Satoshi Takahashi , Kiyohiro Matsushita , Atsuki Fukazawa , Michael Todd
IPC分类号： H01L2100
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31633 , Y10S438/91
摘要： A silicon-containing insulation film having high mechanical strength is formed on a semiconductor substrate by (a) introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing cross-linkable groups, (ii) a cross-linking gas, and (iii) an inert gas, into a reaction chamber where a substrate is placed; (b) applying radio-frequency power to create a plasma reaction space inside the reaction chamber; and (c) controlling a flow of the reaction gas and an intensity of the radio-frequency power.
摘要翻译： 通过（a）引入反应气体，在半导体衬底上形成具有高机械强度的含硅绝缘膜，该反应气体包含（i）包含含有可交联基团的含硅烃化合物的源气体，（ii） 将气体和（iii）惰性气体连接到放置基板的反应室中; （b）施加射频功率以在反应室内产生等离子体反应空间; 和（c）控制反应气体的流动和射频功率的强度。
-
6.发明申请公开(公告)号：US20100184302A1
公开(公告)日：2010-07-22
申请号：US12357174
申请日：2009-01-21
申请人： Woo Jin LEE , Akira Shimizu , Atsuki Fukazawa
发明人： Woo Jin LEE , Akira Shimizu , Atsuki Fukazawa
IPC分类号： H01L21/469
CPC分类号： C23C16/345 , C23C16/045 , C23C16/45523 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/3185
摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.
摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。
-
公开(公告)号：US06383900B1
公开(公告)日：2002-05-07
申请号：US09591589
申请日：2000-06-09
申请人： Akira Shimizu , Kunitoshi Nanba , Atsuki Fukazawa
发明人： Akira Shimizu , Kunitoshi Nanba , Atsuki Fukazawa
IPC分类号： H01L2120
CPC分类号： H01L28/84 , Y10S438/964
摘要： HSG with an uneven surface is formed by (i) removing a spontaneous oxidation layer formed on an amorphous silicon surface of a semiconductor substrate by preprocessing, (ii) dissociating hydrogen in dangling bonds by heating it to a processing temperature, (iii) forming an amorphous silicon/polysilicon mixed-phase thin film selectively on solely an activated surface of the amorphous silicon surface in a silicon compound atmosphere, and (iv) annealing the film continuously. This method is characterized in including (a) a process which supplies a phosphorus compound and a dilution gas into a reactor while the semiconductor substrate is heated to a processing temperature, and (b) a process of annealing the semiconductor substrate in an atmosphere which contains the phosphorus compound and the dilution gas.
摘要翻译： 通过（i）通过预处理除去形成在半导体衬底的非晶硅表面上的自发氧化层，（ii）通过将悬空氢气加热至加工温度来解离氢气，（iii）形成 非晶硅/多晶硅混合相薄膜选择性地仅在硅化合物气氛中的非晶硅表面的活化表面上，以及（iv）连续退火该膜。 该方法的特征在于包括（a）在将半导体基板加热至加工温度的同时将磷化合物和稀释气体供给到反应器中的工序，（b）在含有 磷化合物和稀释气体。
-
公开(公告)号：US06211077B1
公开(公告)日：2001-04-03
申请号：US09337797
申请日：1999-06-22
申请人： Akira Shimizu , Yukihiro Mori , Atsuki Fukazawa
发明人： Akira Shimizu , Yukihiro Mori , Atsuki Fukazawa
IPC分类号： H01L2144
CPC分类号： H01L28/84 , H01L27/1085
摘要： A rough surface made of a doped polycrystal silicon film is formed on an amorphous silicon film disposed on a semiconductor substrate, by a method including the steps of: (a) activating dangling bonds present on a surface of an amorphous silicon film; (b) forming an amorphous silicon-polysilicon mixed-phase layer on the surface of the amorphous silicon film by contacting the dangling bonds with a gas containing silane gas and dopant gas while controlling the ratio of dopant gas to silane gas to bind silicon atoms and dopant atoms to the dangling bonds; and (c) annealing the amorphous silicon-polysilicon mixed-phase layer to form polysilicon grains therefrom, thereby forming a rough surface made of doped polysilicon film. Doping can be conducted after formation of the polysilicon grains.
摘要翻译： 通过包括以下步骤的方法，在设置在半导体衬底上的非晶硅膜上形成由掺杂多晶硅膜制成的粗糙表面：（a）激活存在于非晶硅膜表面上的悬挂键; （b）通过使悬浮键与含有硅烷气体和掺杂剂气体的气体接触，同时控制掺杂剂气体与硅烷气体的比例以结合硅原子而在非晶硅膜的表面上形成非晶硅 - 多晶硅混合相， 掺杂原子到悬挂键; 和（c）使非晶硅 - 多晶硅混合相层退火以形成多晶硅晶粒，从而形成由掺杂多晶硅膜制成的粗糙表面。 可以在形成多晶硅晶粒之后进行掺杂。
-
公开(公告)号：US06242278B1
公开(公告)日：2001-06-05
申请号：US09337920
申请日：1999-06-22
IPC分类号： H01L2100
CPC分类号： H01L28/84 , H01L27/1085
摘要： A rough surface made of polysilicon grains is formed on an amorphous silicon film disposed on a semiconductor substrate by the steps of: (i) forming an amorphous silicon-polysilicon mixed-phase layer having a first density on an activated surface of the amorphous silicon film by contacting the surface with a gas containing monosilane at a first flow rate of monosilane and at a first temperature; and (ii) annealing the amorphous silicon-polysilicon mixed-phase layer to form polysilicon grains therefrom, thereby forming a rough surface made of polysilicon grains. In the above, the improvement includes using disilane in place of monosilane at a second flow rate lower than the first flow rate and at a second temperature lower than the first temperature to form an amorphous silicon-polysilicon mixed-phase layer having a second density higher than the first density. Another improvement includes saturating the reactor with hydrogen gas during the heating step.
摘要翻译： 通过以下步骤在设置在半导体衬底上的非晶硅膜上形成由多晶硅颗粒制成的粗糙表面：（i）在非晶硅膜的活化表面上形成具有第一密度的非晶硅 - 多晶硅混合相层 通过使表面与含有甲硅烷的气体以第一流速的甲硅烷和第一温度接触; 和（ii）使非晶硅 - 多晶硅混合相层退火以形成多晶硅晶粒，由此形成由多晶硅颗粒制成的粗糙表面。 在上述中，改进包括以低于第一流量的第二流量和低于第一温度的第二温度使用乙硅烷代替甲硅烷，并形成第二密度较高的非晶硅 - 多晶硅混合相层 比第一密度。 另一个改进包括在加热步骤期间用氢气使反应器饱和。
-
10.发明授权Method of forming conformal dielectric film having Si-N bonds by PECVD 有权通过PECVD形成具有Si-N键的保形电介质膜的方法公开(公告)号：US07919416B2
公开(公告)日：2011-04-05
申请号：US12357174
申请日：2009-01-21
申请人： Woo-Jin Lee , Akira Shimizu , Atsuki Fukazawa
发明人： Woo-Jin Lee , Akira Shimizu , Atsuki Fukazawa
IPC分类号： H01L21/337
CPC分类号： C23C16/345 , C23C16/045 , C23C16/45523 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/3185
摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.
摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。
-
-
-
-
-
-
-
-
-
搜索结果
56 条记录 (耗时 0.026 秒)
