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公开(公告)号：US08338078B2
公开(公告)日：2012-12-25
申请号：US12581625
申请日：2009-10-19
CPC分类号： G03F7/091 , C08G61/02 , C09D161/04 , G03F7/40
摘要： A material comprising a novolac resin having a C6-C30 aromatic hydrocarbon group substituted with a sulfo group or an amine salt thereof is useful in forming a photoresist undercoat. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 gas for substrate processing.
摘要翻译： 包含具有被磺基取代的C6-C30芳族烃基的酚醛清漆树脂或其胺盐的材料可用于形成光致抗蚀剂底涂层。 底涂层材料的消光系数足以在至少200nm的厚度下提供抗反射效果，并且具有高的耐蚀刻性，如通过用于基板处理的CF 4 / CHF 3气体的缓慢蚀刻速率所证明的。
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公开(公告)号：US20100104977A1
公开(公告)日：2010-04-29
申请号：US12581625
申请日：2009-10-19
CPC分类号： G03F7/091 , C08G61/02 , C09D161/04 , G03F7/40
摘要： A material comprising a novolac resin having a C6-C30 aromatic hydrocarbon group substituted with a sulfo group or an amine salt thereof is useful in forming a photoresist undercoat. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 gas for substrate processing.
摘要翻译： 包含具有被磺基取代的C6-C30芳族烃基的酚醛清漆树脂或其胺盐的材料可用于形成光致抗蚀剂底涂层。 底涂层材料的消光系数足以在至少200nm的厚度下提供抗反射效果，并且具有高的耐蚀刻性，如通过用于基板处理的CF 4 / CHF 3气体的缓慢蚀刻速率所证明的。
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公开(公告)号：US20090202943A1
公开(公告)日：2009-08-13
申请号：US12370652
申请日：2009-02-13
申请人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
发明人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
IPC分类号： G03F7/00 , C08F228/02 , C08F24/00
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition.
摘要翻译： 正型抗蚀剂组合物包含含有其中掺入其中的锍盐作为基础树脂的重复单元的聚合物，其在酸的作用下变得可溶于碱性显影剂。 聚合物在暴露于高能量辐射时产生强烈的磺酸，以促进抗蚀剂组合物中酸不稳定基团的有效断裂。
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4.发明授权Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process 有权阻止含有热酸发生剂的下层组合物，抗下层薄膜形成基材和图案化工艺公开(公告)号：US08349533B2
公开(公告)日：2013-01-08
申请号：US12588590
申请日：2009-10-20
CPC分类号： C07C381/12 , C07C309/12 , C07C2603/74 , C07D307/93 , G03F7/0045 , G03F7/091
摘要： A resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film. The resist lower-layer composition is insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid by heating at a temperature of 100° C. or higher.
摘要翻译： 一种抗蚀剂下层组合物，其被配置为通过在光刻中使用的多层抗蚀剂方法使用，以形成低于作为抗蚀剂上层膜的光致抗蚀剂层的层。 抗蚀剂下层组合物在形成下层之后在碱性显影剂中不溶或难溶，抗蚀剂下层组合物至少包含用于通过在100℃的温度下加热产生酸的热酸发生剂 ℃以上。
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5.发明授权公开(公告)号：US07514202B2
公开(公告)日：2009-04-07
申请号：US11797948
申请日：2007-05-09
申请人： Youichi Ohsawa , Takeru Watanabe , Jun Hatakeyama
发明人： Youichi Ohsawa , Takeru Watanabe , Jun Hatakeyama
IPC分类号： G03F7/004 , G03F7/30 , C07C309/06
CPC分类号： G03F7/11 , G03F7/0045 , H01L21/31116 , H01L21/31138 , H01L21/31144 , Y10S430/122 , Y10S430/126
摘要： A thermal acid generator of generating an acid on heating above 100° C. has formula: CF3CH(OCOR)CF2SO3−(R1)4N+ wherein R is alkyl or aryl, R1 is hydrogen, alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or R1 may bond together to form a ring with N. The sulfonic acid generated possesses an ester site within molecule so that less bulky acyl groups to bulky groups may be incorporated therein. The thermal acid generator provides a sufficient acid strength, is less volatile due to a high molecular weight, and ensures film formation. Upon disposal of used resist liquid, it may be converted into low accumulative compounds.
摘要翻译： 一种在100℃以上加热生成酸的热酸发生剂具有式：CF 3 CH（OCOR）CF 2 SO 3 - （R 1）4 N +，其中R是烷基或芳基，R 1是氢，烷基，链烯基，氧代烷基，芳基，芳烷基或芳氧基烷基 ，或者R1可以键合在一起形成具有N的环。产生的磺酸在分子内具有酯位点，从而可以在其中引入较大体积的大体积基团的酰基。 热酸发生器提供足够的酸强度，由于高分子量而挥发性较低，并且确保成膜。 在处理使用过的抗蚀剂液体时，可以将其转化为低浓度的化合物。
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6.发明申请Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process 有权具有可聚合阴离子的锍盐，聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US20080102407A1
公开(公告)日：2008-05-01
申请号：US11976564
申请日：2007-10-25
CPC分类号： G03F7/0045 , C08F20/22 , C08F20/38 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/124 , Y10S430/126 , Y10S430/143
摘要： A sulfonium salt having a polymerizable anion generates a strong sulfonic acid upon exposure to high-energy radiation so that it facilitates effective scission of acid labile groups in chemically amplified resist compositions. It is useful as a monomer from which a base resin for use in radiation-sensitive resist compositions is derived.
摘要翻译： 具有可聚合阴离子的锍盐在暴露于高能量辐射下产生强烈的磺酸，从而有助于在化学增强的抗蚀剂组合物中有效地分裂酸不稳定基团。 作为衍生用于辐射敏感性抗蚀剂组合物的基础树脂的单体是有用的。
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公开(公告)号：US06916593B2
公开(公告)日：2005-07-12
申请号：US10615683
申请日：2003-07-09
申请人： Jun Hatakeyama , Youichi Ohsawa , Takeru Watanabe
发明人： Jun Hatakeyama , Youichi Ohsawa , Takeru Watanabe
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/106
摘要： Although use of a nitrogen-containing compound as a basic compound component of a resist composition makes it possible to ease the T-top problem at an acid dissociation constant pKa falling within a range of 2 to 6, it is accompanied with the problem that the reaction, that is, acid diffusion upon use of a highly-reactive acid-labile group cannot be controlled. In order to overcome this problem, one or more basic compounds selected from those represented by the following formulas (I) to (III) and (1) to (4) are employed.
摘要翻译： 尽管使用含氮化合物作为抗蚀剂组合物的碱性化合物组分可以使酸解离常数pKa在2至6的范围内缓解T顶部问题，但是伴随着如下问题： 反应，即使用高反应性酸不稳定基团时的酸扩散是不能控制的。 为了克服这个问题，使用一种或多种选自由下式（I）至（III）和（1）至（4）表示的化合物的碱性化合物。
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公开(公告)号：US08062828B2
公开(公告)日：2011-11-22
申请号：US12370652
申请日：2009-02-13
申请人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
发明人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition.
摘要翻译： 正型抗蚀剂组合物包含含有其中掺入其中的锍盐作为基础树脂的重复单元的聚合物，其在酸的作用下变得可溶于碱性显影剂。 聚合物在暴露于高能量辐射时产生强烈的磺酸，以促进抗蚀剂组合物中酸不稳定基团的有效断裂。
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9.发明授权Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process 有权具有可聚合阴离子的锍盐，聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US07569326B2
公开(公告)日：2009-08-04
申请号：US11976564
申请日：2007-10-25
CPC分类号： G03F7/0045 , C08F20/22 , C08F20/38 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/124 , Y10S430/126 , Y10S430/143
摘要： A sulfonium salt having a polymerizable anion generates a strong sulfonic acid upon exposure to high-energy radiation so that it facilitates effective scission of acid labile groups in chemically amplified resist compositions. It is useful as a monomer from which a base resin for use in radiation-sensitive resist compositions is derived.
摘要翻译： 具有可聚合阴离子的锍盐在暴露于高能量辐射下产生强烈的磺酸，从而有助于在化学增强的抗蚀剂组合物中有效地分裂酸不稳定基团。 作为衍生用于辐射敏感性抗蚀剂组合物的基础树脂的单体是有用的。
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10.发明申请公开(公告)号：US20070264596A1
公开(公告)日：2007-11-15
申请号：US11797948
申请日：2007-05-09
申请人： Youichi Ohsawa , Takeru Watanabe , Jun Hatakeyama
发明人： Youichi Ohsawa , Takeru Watanabe , Jun Hatakeyama
IPC分类号： G03C5/00
CPC分类号： G03F7/11 , G03F7/0045 , H01L21/31116 , H01L21/31138 , H01L21/31144 , Y10S430/122 , Y10S430/126
摘要： A thermal acid generator of generating an acid on heating above 100° C. has formula: CF3CH(OCOR)CF2SO3−(R1)4N+ wherein R is alkyl or aryl, R1 is hydrogen, alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or R1 may bond together to form a ring with N. The sulfonic acid generated possesses an ester site within molecule so that less bulky acyl groups to bulky groups may be incorporated therein. The thermal acid generator provides a sufficient acid strength, is less volatile due to a high molecular weight, and ensures film formation. Upon disposal of used resist liquid, it may be converted into low accumulative compounds.
摘要翻译： 在100℃以上加热产生酸的热酸发生剂具有下式：CF 3 CH（OCOR）CF 2 SO 3， 其中R是烷基或芳基，R 1或O 2，其中R是烷基或芳基，R 1， >是氢，烷基，烯基，氧代烷基，芳基，芳烷基或芳氧基烷基，或者R 1可以键合在一起以形成与N的环。所产生的磺酸在分子内具有酯位点，使得较小体积 酰基可以加入到大体积基团中。 热酸发生器提供足够的酸强度，由于高分子量而挥发性较低，并且确保成膜。 在处理使用过的抗蚀剂液体时，可以将其转化为低浓度的化合物。
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