摘要:
A one-sided sealed type semiconductor device comprising a substrate proper for a one-sided resin mold provided on the first main surface thereof with a wiring circuit including connection parts for semiconductor elements and on the second main surface thereof with flat type external connection terminals led out thereon via a through hole, semiconductor elements set in place and packaged in predetermined areas of the first main surface of the substrate proper, a transfer mold resin layer for sealing solely the surface having the semiconductor elements packaged thereon, and a metallic layer formed on the first main surface independently of wiring circuit and outside the area having the wiring circuit.
摘要:
A semiconductor device with a thickness of 1 mm or less is disclosed, that comprises a frame plate main body with a thickness in the range from 0.1 mm to 0.25 mm, a semiconductor pellet disposed on a first surface of the frame plate main body and with a thickness in the range from 0.2 mm to 0.3 mm, an external connection lead, one end thereof being connected to a peripheral portion of the first surface of the frame plate main body, the other end thereof extending to the outside of the frame plate main body, a bonding wire for electrically connecting an electrode of the semiconductor pellet and a connection portion of the end of the external connection lead, and a sealing resin layer for covering and sealing at least a region including the semiconductor pellet, the bonding wire, and a connection portion.
摘要:
A one-sided sealed type semiconductor device comprising a substrate proper for a one-sided resin mold provided on the first main surface thereof with a wiring circuit including connection parts for semiconductor elements and on the second main surface thereof with flat type external connection terminals led out thereon via a through hole, semiconductor elements set in place and packaged in predetermined areas of the first main surface of the substrate proper, a transfer mold resin layer for sealing solely the surface having the semiconductor elements packaged thereon, and a metallic layer formed on the first main surface independently of wiring circuit and outside the area having the wiring circuit.
摘要:
A semiconductor device with a thickness of 1 mm or less is disclosed, that comprises a frame plate main body with a thickness in the range from 0.1 mm to 0.25 mm, a semiconductor pellet disposed on a first surface of the frame plate main body and with a thickness in the range from 0.2 mm to 0.3 mm, an external connection lead, one end thereof being connected to a peripheral portion of the first surface of the frame plate main body, the other end thereof extending to the outside of the frame plate main body, a bonding wire for electrically connecting an electrode of the semiconductor pellet and a connection portion of the end of the external connection lead, and a sealing resin layer for covering and sealing at least a region including the semiconductor pellet, the bonding wire, and a connection portion.