FILM FORMATION METHOD AND FILM FORMATION APPARATUS
    2.
    发明申请
    FILM FORMATION METHOD AND FILM FORMATION APPARATUS 审中-公开
    电影形成方法和电影制作装置

    公开(公告)号:US20110281443A1

    公开(公告)日:2011-11-17

    申请号:US13106140

    申请日:2011-05-12

    IPC分类号: H01L21/316 C23C16/40

    CPC分类号: C23C16/402

    摘要: The film formation method includes transferring an object to be processed into a process chamber; controlling a temperature of the object to be processed to be equal to or lower than 350° C.; and supplying an aminosilane gas as a Si source gas and an oxidizing gas into the process chamber, wherein the oxidizing gas consists of a first oxidizing gas comprising at least one selected from the group consisting of an O2 gas and an O3 gas, and a second oxidizing gas comprising at least one selected from the group consisting of a H2O gas and a H2O2 gas, thereby forming a silicon oxide film on a surface of the object to be processed.

    摘要翻译: 成膜方法包括将待处理物体转移到处理室中; 将待处理物体的温度控制在350℃以下; 将作为Si源气体和氧化气体的氨基硅烷气体供给到处理室中,其中,所述氧化气体由包含选自O 2气体和O 3气体中的至少一种的第一氧化气体构成, 包含选自H 2 O气体和H 2 O 2气体中的至少一种的氧化气体,从而在待处理物体的表面上形成氧化硅膜。