公开(公告)号：US20090061276A1

公开(公告)日：2009-03-05

申请号：US12201332

申请日：2008-08-29

申请人： Jun TAMURA ,  Yoshihiko NAKANO ,  Wu MEI ,  Taishi FUKAZAWA

发明人： Jun TAMURA ,  Yoshihiko NAKANO ,  Wu MEI ,  Taishi FUKAZAWA

IPC分类号： H01M4/90 ,  H01M4/88 ,  C23C14/34 ,  B05D5/12 ,  H01M8/10

CPC分类号： H01M4/8605 ,  H01M4/925 ,  H01M4/926 ,  H01M2004/8684 ,  H01M2008/1095

摘要： This invention provides an anode for a fuel cell which can realize stable output for a long period of time, and a fuel cell using the anode for a fuel cell. The anode for a fuel cell comprises an electrode catalyst layer, the electrode catalyst layer comprising a supported catalyst comprising an electroconductive carrier material and catalyst fine particles supported on the electroconductive carrier material, a proton conductive inorganic oxide, and a proton conductive organic polymer binder, the weight ratio between the supported catalyst (C) and the proton conductive inorganic oxide (SA), WSA/WC, being 0.06 to 0.38, the weight ratio between the proton conductive inorganic oxide (SA) and the proton conductive organic polymer binder (P), WP/WSA, being 0.125 to 0.5.

摘要翻译： 本发明提供一种能够长时间实现稳定输出的燃料电池用阳极和使用燃料电池用阳极的燃料电池。 用于燃料电池的阳极包括电极催化剂层，该电极催化剂层包含负载的催化剂，其包含导电载体材料和负载在导电载体材料上的催化剂细颗粒，质子传导性无机氧化物和质子传导性有机聚合物粘合剂， 载体催化剂（C）和质子传导性无机氧化物（SA）之间的重量比WSA / WC为0.06〜0.38，质子传导性无机氧化物（SA）与质子传导性有机聚合物粘合剂（P ），WP / WSA为0.125〜0.5。

公开(公告)号：US20080026282A1

公开(公告)日：2008-01-31

申请号：US11778937

申请日：2007-07-17

申请人： Jun TAMURA ,  Yoshihiko NAKANO ,  Wu MEI ,  Satoshi MIKOSHIBA

发明人： Jun TAMURA ,  Yoshihiko NAKANO ,  Wu MEI ,  Satoshi MIKOSHIBA

IPC分类号： H01M8/10 ,  H01M4/88 ,  H01M4/94

CPC分类号： H01M4/8647 ,  H01M4/8652 ,  H01M4/8657 ,  H01M4/8828 ,  H01M4/90 ,  H01M4/9041 ,  H01M4/9075 ,  H01M4/92 ,  H01M4/925 ,  H01M2008/1095

摘要： A fuel cell, which can supply stable output even at elevated temperatures and can maintain its power generation performance over a long period of time, can be realized by an electrode for a fuel cell comprising a catalyst layer formed of a catalyst composite and a binder, the catalyst composite comprising a proton-conductive inorganic oxide and an oxidation-reduction catalyst phase supported on the proton-conductive inorganic oxide, the proton-conductive inorganic oxide comprising a catalyst carrier selected from tin(Sn)-doped In2O3, fluorine(F)-doped SnO2, and antimony(Sb)-doped SnO2 and an oxide particle phase chemically bonded to the surface of the catalyst carrier. The catalyst composite is manufactured by dispersing a catalyst carrier in a solution containing a material as a starting material for an oxide particle phase, heat treating the dispersion to form a proton-conductive inorganic oxide, further dispersing the proton-conductive inorganic oxide in a catalyst precursor-containing solution, and subjecting the dispersion to heat treatment or pH adjustment to deposit a catalyst phase.

摘要翻译： 即使在升高的温度下也可以提供稳定的输出并且可以长时间维持其发电性能的燃料电池可以通过包括由催化剂复合材料和粘合剂形成的催化剂层的燃料电池的电极来实现， 所述催化剂复合物包含质子传导性无机氧化物和负载在所述质子传导性无机氧化物上的氧化还原催化剂相，所述质子传导性无机氧化物包含选自锡（Sn）掺杂的In 2 （F） - 掺杂的SnO 2，和锑（Sb）掺杂的SnO 2 N和氧化物颗粒相 化学键合到催化剂载体的表面。 催化剂复合体是通过将催化剂载体分散在含有作为氧化物粒子相原料的材料的溶液中进行热处理而形成质子传导性无机氧化物，进一步将质子传导性无机氧化物分散在催化剂 含有前体的溶液，并对分散体进行热处理或pH调节以沉积催化剂相。

公开(公告)号：US20090325021A1

公开(公告)日：2009-12-31

申请号：US12372135

申请日：2009-02-17

申请人： Jun TAMURA ,  Yoshihiko Nakano

发明人： Jun TAMURA ,  Yoshihiko Nakano

IPC分类号： H01M4/86 ,  H01M8/10

CPC分类号： H01M4/8647 ,  H01M8/1004

摘要： A cathode for a fuel cell is provided, which includes an electrode catalyst layer. This electrode catalyst layer is constituted by a carried catalyst including a conductive carrier and catalytic fine particles carried on the conductive carrier, by a proton-conductive inorganic oxide containing an oxide carrier and oxide particles carried on a surface of the oxide carrier, and by a proton-conductive organic polymer binder. The carried catalyst is incorporated therein at a weight of WC. Silicon oxide is carried on the surface of the proton-conductive inorganic oxide at a weight ratio of 0.1-0.5 times as much as the weight of the proton-conductive inorganic oxide. The proton-conductive inorganic oxide is incorporated at a weight of WSA+SiO2. The weight ratio (WSA+SiO2/WC) is confined to 0.01-0.25. The proton-conductive organic polymer binder is incorporated at a weight of WP, the weigh ratio (WP/WSA+SiO2) is confined to 0.5-43.

摘要翻译： 提供了一种用于燃料电池的阴极，其包括电极催化剂层。 该电极催化剂层由携带有催化剂的催化剂构成，该催化剂包含导电性载体和载体在载体上的催化微粒，通过含有氧化物载体的质子传导性无机氧化物和承载在氧化物载体的表面上的氧化物粒子构成， 质子传导性有机聚合物粘合剂。 所携带的催化剂以WC的重量并入其中。 氧化硅以质子传导性无机氧化物的重量的0.1-0.5倍的重量比承载在质子传导性无机氧化物的表面上。 质子传导性无机氧化物以WSA + SiO 2的重量掺入。 重量比（WSA + SiO2 / WC）限制在0.01-0.25。 质子传导性有机聚合物粘合剂以WP的重量掺入，重量比（WP / WSA + SiO 2）被限制在0.5-43。

公开(公告)号：US20110303643A1

公开(公告)日：2011-12-15

申请号：US13160053

申请日：2011-06-14

申请人： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI

发明人： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI

IPC分类号： C23F1/00 ,  H05H1/24 ,  C23F1/08

CPC分类号： H01J37/32568 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32577

摘要： The substrate processing apparatus includes a susceptor, which is connected to a high frequency power source and on which a substrate is held, an upper electrode plate facing the susceptor, and a processing space PS formed between the susceptor and the upper electrode, to perform a plasma etching process on the wafer by using plasma. The substrate processing apparatus includes a dielectric plate which covers a surface of the upper electrode plate, the surface of which faces the processing space PS, the upper electrode plate is divided into an inner electrode facing a center portion of the wafer and an outer electrode facing a circumferential portion of the wafer, the inner electrode and the outer electrode are electrically insulated from each other, and a second variable DC power source applies a positive DC voltage to the inner electrode and the outer electrode is electrically grounded.

摘要翻译： 基板处理装置包括：基座，其与高频电源连接，基板保持在基座上;面对基座的上电极板;以及形成在基座与上电极之间的处理空间PS， 通过使用等离子体对晶片进行等离子体蚀刻处理。 基板处理装置包括覆盖上电极板的表面的电介质板，其表面面向处理空间PS，上电极板被分成面对晶片的中心部分的内电极和面对 晶片的圆周部分，内部电极和外部电极彼此电绝缘，并且第二可变直流电源向内部电极施加正的直流电压，并且外部电极被电接地。

公开(公告)号：US20110318934A1

公开(公告)日：2011-12-29

申请号：US13167574

申请日：2011-06-23

申请人： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI ,  Jun OYABU

发明人： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI ,  Jun OYABU

IPC分类号： H01L21/3065

CPC分类号： H01J37/04 ,  H01J37/32091 ,  H01J37/3255 ,  H01J37/32568

摘要： A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed

摘要翻译： 基板处理装置包括容纳晶片的室，设置在室内并且晶片保持在其上的基座，与基座相对的上电极和连接到基座的第二高频电源，其中上电极电 连接到地面并且可相对于基座移动。 基板处理装置将处理空间中产生的等离子体和地面之间的等离子体与电介质之间的电位差和电介质与地之间的电位差通过上电极中的电介质分离，并将a 上电极和基座之间的间隙。 因此，改变了上电极和基座之间的等离子体密度

公开(公告)号：US20110240224A1

公开(公告)日：2011-10-06

申请号：US13070115

申请日：2011-03-23

申请人： Akihiro YOSHIMURA ,  Tetsuji SATO ,  Masato HORIGUCHI ,  Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI

发明人： Akihiro YOSHIMURA ,  Tetsuji SATO ,  Masato HORIGUCHI ,  Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI

IPC分类号： H01L21/3065

CPC分类号： H01J37/32091 ,  H01J37/32568

摘要： Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.

摘要翻译： 公开了一种能够抑制在圆筒形室的一侧的移动电极与端壁之间的空间中产生等离子体的基板处理装置。 基板处理装置包括用于容纳晶片的圆柱形室，可沿着室内的室的中心轴线移动的喷头，与腔室中的淋浴喷头相对的基座，以及柔性波纹管，其将淋浴头连接到 所述室，其中向所述淋浴喷头和所述基座之间呈现的处理空间施加高频功率，将处理气体引入所述处理空间中，所述淋浴喷头和所述室的侧壁彼此不接触， 并且旁路部件被安装成电连接淋浴头和盖子或室的侧壁。

公开(公告)号：US20090256195A1

公开(公告)日：2009-10-15

申请号：US12423280

申请日：2009-04-14

申请人： Jun TAMURA

发明人： Jun TAMURA

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734

摘要： A semiconductor device in which current flows in a vertical direction includes a structure that decreases resistance between a source electrode and a drain electrode along with a current path at a position different from a position having highest electric field intensity between the source electrode and the drain electrode.

摘要翻译： 其中电流在垂直方向上流动的半导体器件包括降低源电极和漏电极之间的电阻以及在与源电极和漏极之间具有最高电场强度的位置不同的位置处的电流路径的结构 。

公开(公告)号：US20080203472A1

公开(公告)日：2008-08-28

申请号：US12036907

申请日：2008-02-25

申请人： Jun TAMURA

发明人： Jun TAMURA

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/26586 ,  H01L29/0869 ,  H01L29/0886 ,  H01L29/4236 ,  H01L29/66704 ,  H01L29/66795 ,  H01L29/7824 ,  H01L29/7825

摘要： A lateral MOSFET according to the present invention has a trench gate structure having a cross sectional shape spreading toward an open end.

摘要翻译： 根据本发明的横向MOSFET具有向开口端扩展的横截面形状的沟槽栅极结构。