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264 条记录 (耗时 0.034 秒)

    Chemical vapor deposition vaporizer
    1.
    发明授权
    Chemical vapor deposition vaporizer 失效
    化学气相沉积蒸发器

    公开(公告)号：US06210485B1

    公开(公告)日：2001-04-03

    申请号：US09352629

    申请日：1999-07-13

    申请人： Jun Zhao ,  Lee Luo ,  Xiaoliang Jin ,  Frank Chang ,  Charles Dornfest ,  Po Tang

    发明人： Jun Zhao ,  Lee Luo ,  Xiaoliang Jin ,  Frank Chang ,  Charles Dornfest ,  Po Tang

    IPC分类号： C23C1600

    CPC分类号： C23C16/4481

    摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the vaporization of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, for deposition on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. The vaporizer comprises thermally controlled components which are adapted for easy assembly and disassembly. A main vaporizing section provides a large heated surface for flash vaporization. A high conductance blocker is disposed at a lower end of the vaporizer to provide an extended vaporization surface. Optionally, a filter may be employed to capture unvaporized precursor droplets.

    摘要翻译： 本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。 特别考虑的是用于蒸发金属氧化物膜如钡，锶，氧化钛（BST）膜的装置和方法，用于沉积在硅晶片上，以使集成电路电容器用于高容量动态存储器模块。 蒸发器包括适于容易组装和拆卸的热控部件。 主蒸发部分提供用于闪蒸的大的加热表面。 高电导阻挡器设置在蒸发器的下端以提供延长的蒸发表面。 任选地，可以使用过滤器来捕获未汽化的前体液滴。

    High temperature filter for CVD apparatus
    2.
    发明授权
    High temperature filter for CVD apparatus 失效
    CVD设备用高温过滤器

    公开(公告)号：US06635114B2

    公开(公告)日：2003-10-21

    申请号：US09467296

    申请日：1999-12-17

    申请人： Jun Zhao ,  Charles Dornfest ,  Frank Chang ,  Xiaoliang Jin ,  Po Tang

    发明人： Jun Zhao ,  Charles Dornfest ,  Frank Chang ,  Xiaoliang Jin ,  Po Tang

    IPC分类号： C23C1600

    CPC分类号： C23C16/4402 ,  C23C16/4481 ,  C23C16/4486

    摘要： The present invention generally provides a deposition chamber for depositing materials which require vaporization, especially low volatility precursors, which are transported as a liquid to a vaporizer to be converted to vapor phase through one or more vaporizing elements and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. In one aspect, the chamber comprises a series of heated temperature controlled internal liners as vaporizing surfaces which are configured for rapid removal, cleaning and/or replacement and preferably are made of a material having a thermal coefficient of expansion close to that of the deposition material. The vaporizing surfaces “flash” sprayed liquid precursors on the surface of the vaporizing surfaces and then purify the flashed precursors before flowing further into the system. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. Preferably, internal surfaces of the chamber are adjustable and maintainable at a suitable temperature above ambient, e.g., about 150° C. to about 300° C., to prevent decomposition and/or condensation of vaporized material on the chamber and related gas flow surfaces.

    摘要翻译： 本发明通常提供一种用于沉积需要蒸发的材料，特别是低挥发性前体的沉积室，其作为液体被输送到蒸发器，以通过一个或多个汽化元件转化为气相，并且必须在升高的温度下运输至 防止腔室部件发生不必要的冷凝。 在一个方面，腔室包括一系列加热的受温度控制的内衬，作为蒸发表面，其被构造用于快速去除，清洁和/或更换，并且优选地由具有接近沉积材料的热膨胀系数的材料制成 。 蒸发表面在蒸发表面的表面上“闪蒸”喷射的液体前体，然后在进一步进入系统之前净化闪光的前体。 特别考虑的是用于在硅晶片上沉积诸如钡，锶，氧化钛（BST）膜的金属氧化物膜的装置和方法，以使集成电路电容器用于高容量动态存储器模块。 优选地，室的内表面是可调节的并且可在高于环境温度（例如约150℃至约300℃）的合适温度下保持，以防止气化材料在室和相关气流表面上的分解和/或冷凝 。

    Cold trap
    7.
    发明授权
    Cold trap 失效
    冷阱

    公开(公告)号：US6066209A

    公开(公告)日：2000-05-23

    申请号：US52743

    申请日：1998-03-31

    申请人： Talex Sajoto ,  Jun Zhao ,  Vincent Ku ,  Charles Dornfest

    发明人： Talex Sajoto ,  Jun Zhao ,  Vincent Ku ,  Charles Dornfest

    IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  H01L21/00 ,  H01L21/31 ,  C23C16/00

    CPC分类号： C23C16/4409 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4481 ,  C23C16/45561 ,  C23C16/4557 ,  H01L21/67017 ,  H01L21/6715 ,  Y10S261/65

    摘要： The invention relates to an apparatus and process for filtering deposition gases in a substrate processing system. Particularly contemplated is an apparatus and process for the filtering deposition gases of a metal-oxide film deposited on a silicon wafer to make integrated circuits. In one embodiment, the invention provides an apparatus for filtering a fluid in a semiconductor processing system, comprising a housing and a filtering member disposable in the housing, the filtering member comprising a base portion and a filtering portion having an inlet and an outlet and a plurality of temperature controlled fluid passages formed between the inlet and the outlet, the passages having a length longer than a width across the passages.

    摘要翻译： 本发明涉及一种用于在基板处理系统中过滤沉积气体的装置和方法。 特别考虑的是用于过滤沉积在硅晶片上的金属氧化物膜的沉积气体以制造集成电路的装置和方法。 在一个实施例中，本发明提供了一种用于对半导体处理系统中的流体进行过滤的装置，包括壳体和一次性在壳体中的过滤构件，过滤构件包括基部和具有入口和出口的过滤部分， 多个温度控制的流体通道形成在入口和出口之间，通道的长度大于通道两端的宽度。